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A. D. Wieck

A. D. Wieck contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

Extending the time of coherent optical response in ensemble of singly-charged InGaAs quantum dots

The ability to extend the time scale of the coherent optical response from large ensembles of quantum emitters is highly appealing for applications in quantum information devices. In semiconductor nanostructures, spin degrees of freedom can be used as auxiliary, powerful tools to modify the coherent optical dynamics. Here, we apply this approach to negatively charged (In,Ga)As/GaAs self-assembled quantum dots which are considered as excellent quantum emitters with robust optical coherence and high bandwidth. We study 3-pulse spin-dependent photon echoes subject to moderate transverse magnetic fields up to 1 T. We demonstrate that the timescale of coherent optical response can be extended by at least an order of magnitude by the field. Without magnetic field, the photon echo decays with $T_ 2$ = 0.45 ns which is determined by the radiative lifetime of trions $T_1$ = 0.27 ns. In the presence of the transverse magnetic field, the decay of the photon echo signal is given by spin dephasing time of the ensemble of resident electrons $T_{2,e}$ ~ 4 ns. We demonstrate that the non-zero transverse g-factor of the heavy holes in the trion state plays a crucial role in the temporal evolution and magnetic field dependence of the long-lived photon echo signal.

preprint2021arXiv

Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well

The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near zero magnetic field. Spin-blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ~0.1 found for a magnetic field parallel to the direction [11(bar)0], is approximately a factor of four lower than that for comparable circuits fabricated from material grown on widely-employed standard (001) GaAs substrates, and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates.

preprint2021arXiv

Optical detection of single electron transport dynamics

The unpredictability of a single quantum event lies at the very core of quantum mechanics. Physical information is therefore drawn from a statistical evaluation of many such processes. Nevertheless, recording each single quantum event in a time trace the "random telegraph signal" is of great value, as it allows insight into the underlying physical system. Here, quantum dots have proven to be well suited systems, as they exhibit both single photon emission and single electron charge transport. While single photon emission is generally studied on self-assembled quantum dots, single electron transport studies are focused on gate-defined structures. We investigate, on a single self-assembled quantum dot, the single electron transport in the optical telegraph signal with high bandwidth and observe in the full counting statistics the interplay between charge and spin dynamics in a noninvasive way. In particular, we are able to identify the spin relaxation of the Zeeman-split quantum-dot level in the charge statistics.

preprint2020arXiv

Coherent beam splitting of flying electrons driven by a surface acoustic wave

We develop a coherent beam splitter for single electrons driven through two tunnel-coupled quantum wires by surface acoustic waves (SAWs). The output current through each wire oscillates with gate voltages to tune the tunnel-coupling and potential difference between the wires. This oscillation is assigned to coherent electron tunneling motion that can be used to encode a flying qubit and is well reproduced by numerical calculations of time evolution of the SAW-driven single electrons. The oscillation visibility is currently limited to about 3%, but robust against decoherence, indicating that the SAW-electron can serve as a novel platform for a solid-state flying qubit.

preprint2020arXiv

Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure

The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.

preprint2019arXiv

Detection and amplification of spin noise using scattered laser light in a quantum-dot microcavity

Fundamental properties of the spin-noise signal formation in a quantum-dot microcavity are studied by measuring the angular characteristics of the scattered light intensity. A distributed Bragg reflector microcavity was used to enhance the light-matter interaction with an ensemble of n-doped (In,Ga)As/GaAs quantum dots, which allowed us to study subtle effects of the noise signal formation. Detecting the scattered light outside of the aperture of the transmitted light, we measured the basic electron spin properties, like g-factor and spin dephasing time. Further, we investigated the influence of the microcavity on the scattering distribution and possibilities of signal amplification by additional resonant excitation.

preprint2014arXiv

Robust recipe for low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure

The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures, with a 2DEG at typically 100 nm below the surface, are widely studied. In order to explore electron transport in such systems, low-resistance ohmic contacts are required that connect the 2DEG to macroscopic measurement leads at the surface. Here we report on designing and measuring a dedicated device for unraveling the various resistance contributions in such contacts, which include pristine 2DEG series resistance, the 2DEG resistance under a contact, the contact resistance itself, and the influence of pressing a bonding wire onto a contact. We also report here a robust recipe for contacts with very low resistance, with values that do not change significantly for annealing times between 20 and 350 sec, hence providing the flexibility to use this method for materials with different 2DEG depths. The type of heating used for annealing is found to strongly influence the annealing process and hence the quality of the resulting contacts.