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Paper detail

Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanisms for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well, but also for electrons in a deeper bulk layer.

preprint2010arXivOpen access
S. Z. DenegaT. LastJ. LiuA. SlachterP. J. RizoP. H. M. van LoosdrechtB. J. van WeesD. ReuterA. D. WieckC. H. van der Wal
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S. Z. DenegaT. LastJ. LiuA. SlachterP. J. RizoP. H. M. van LoosdrechtB. J. van WeesD. ReuterA. D. WieckC. H. van der Wal

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