BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

D. Reuter

D. Reuter appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciquant-phcond-mat.str-elphysics.opticscond-mat.othercond-mat.dis-nnphysics.atom-phcond-mat.softcond-mat.supr-conphysics.ins-det

Catalog footprint

What is connected

60works
11topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

60 published item(s)

preprint2021arXiv

Nonlinear down-conversion in a single quantum dot

Photonic quantum technologies$^1$, with applications in quantum communication, sensing as well as quantum simulation and computing, are on the verge of becoming commercially available. One crucial building block are tailored nanoscale integratable quantum light sources, matching the specific needs of use-cases. Several different approaches to realize solid-state quantum emitters$^2$ with high performance$^3$ have been pursued. However, the properties of the emitted single photons are always defined by the individual quantum light source and despite numerous quantum emitter tuning techniques$^{4-7}$, scalability is still a major challenge. Here we show an emitter-independent method to tailor and control the properties of the single photon emission. We demonstrate a laser-controlled down-conversion process from an excited state of a quantum three-level system$^8$. Starting from a biexciton state, a tunable control laser field defines a virtual state in a stimulated process. From there, spontaneous emission to the ground state leads to optically controlled single photon emission. Based on this concept, we demonstrate energy tuning of the single photon emission with a control laser field. The nature of the involved quantum states furthermore provides a unique basis for the future control of polarization and bandwidth, as predicted by theory$^{9,10}$. Our demonstration marks an important step towards tailored single photon emission from a photonic quantum system based on quantum optical principles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ionic conductivity and relaxation dynamics in plastic-crystals with nearly globular molecules

We have performed a dielectric investigation of the ionic charge transport and the relaxation dynamics in plastic-crystalline 1-cyano-adamantane (CNA) and in two mixtures of CNA with the related plastic crystals adamantane or 2-adamantanon. Ionic charge carriers were provided by adding 1% of Li salt. The molecules of these compounds have nearly globular shape and, thus, the so-called revolving-door mechanism assumed to promote ionic charge transport via molecular reorientations in other PC electrolytes, should not be active here. Indeed, a comparison of the dc resistivity and the reorientational alpha-relaxation times in the investigated PCs, reveals complete decoupling of both dynamics. Similar to other PCs, we find a significant mixing-induced enhancement of the ionic conductivity. Finally, these solid-state electrolytes reveal a second relaxation process, slower than the alpha-relaxation, which is related to ionic hopping. Due to the mentioned decoupling, it can be unequivocally detected and is not superimposed by the reorientational contributions as found for most other ionic conductors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain-driven InAs island growth on top of GaAs(111) nanopillars

We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars results in InAs islands with diameters < 30 nm exhibiting predominantly rounded triangular in-plane shapes. The islands show a tendency to grow at positions displaced from the center towards the pillar edge. Atomistic molecular statics simulations evidence that triangular-prismatic islands centered to the pillar axis with diameters smaller than that of the nanopillars are energetically favored. Moreover, we reveal the existence of minimum-energy states for off-axis island positions, in agreement with the experiment. These findings are interpreted by evaluating the spatial strain distributions and the number of broken bonds of surface atoms as a measure for the surface energy. The preferred off-axis island positions can be understood in terms of an increased compliancy of the GaAs nanopillar beneath the island because of the vicinity of free surfaces, leading to a reduction of strain energy. The influence of surface steps on the energy of the system is addressed as well.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A

Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbor distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150 - 350 C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to a further reduction of adatom migration length. A common feature of the growth morphology for all other explored conditions is the formation of merged hillocks or pyramids with well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Structure, superconductivity, and magnetism in Rb1-xFe1.6Se2-zSz

The single-crystal growth, stoichiometry, and structure of Rb1-xFe2-ySe2-zSz crystals with substitution of Se by S are reported. The variation of the magnetic and thermodynamic parameters of samples was studied by differential-scanning calorimetry, magnetic susceptibility, conductivity, and specific heat. The experimental results are discussed within a T-z phase diagram, which includes vacancy-ordered and vacancy-disordered antiferromagnetic (AFM), superconducting (SC), and non-superconducting phases. The structural study revealed change in the local environment of the Fe tetrahedrons depending on substitution: a reduction of the Fe-Fe and Fe-Ch(chalcogen) bond lengths and a tendency for the six out of eight bond angles to approach values for a regular tetrahedron suggesting a reduction of structural distortions with substitution. With increasing substitution, a lowering of the superconducting transition temperature Tc was observed; the percolation threshold for the SC state is located at the substitution z = 1.2. The SC state was found to coexist with the AFM state that persists in all samples independent of substitution. The temperature of the transition into the AFM state TN shows a monotonous decrease indicating a weakening of the AFM interactions with increasing substitution. The AFM phase exhibits an iron-vacancy-ordered structure below the structural transition at Ts. The temperature Ts shows a non-monotonous variation: a decrease with increasing z up to 1.3, followed by an increase for further increasing z. The suppression of the superconductivity with substitution is accompanied by a significant reduction of the density of states at the Fermi energy and a weakening of the electronic correlations in the studied system.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Analysis of optical differential transmission signals from co-propagating fields in a lambda system medium

We analyze theoretically and experimentally how nonlinear differential-transmission spectroscopy of a lambda-system medium can provide quantitative understanding of the optical dipole moments and transition energies. We focus on the situation where two optical fields spatially overlap and co-propagate to a single detector. Nonlinear interactions give cross-modulation between a modulated and non-modulated laser field, yielding differential transmission signals. Our analysis shows how this approach can be used to enhance the visibility of relatively weak transitions, and how particular choices in the experimental design minimize systematic errors and the sensitivity to changes in laser field intensities. Experimentally, we demonstrate the relevance of our analysis with spectroscopy on the donor-bound exciton system of silicon donors in GaAs, where the transitions from the two bound-electron spin states to a bound-exciton state form a lambda system. Our approach is, however, of generic value for many spectroscopy experiments on solid-state systems in small cryogenic measurement volumes where in-situ frequency or polarization filtering of control and signal fields is often challenging.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Conductivity enhancement in plastic-crystalline solid-state electrolytes

Finding new ionic conductors that enable significant advancements in the development of energy-storage devices is a challenging goal of current material science. Aside of material classes as ionic liquids or amorphous ion conductors, the so-called plastic crystals (PCs) have been shown to be good candidates combining high conductivity and favourable mechanical properties. PCs are formed by molecules whose orientational degrees of freedom still fluctuate despite the material exhibits a well-defined crystalline lattice. Here we show that the conductivity of Li+ ions in succinonitrile, the most prominent molecular PC electrolyte, can be enhanced by several decades when replacing part of the molecules in the crystalline lattice by larger ones. Dielectric spectroscopy reveals that this is accompanied by a stronger coupling of ionic and reorientational motions. These findings, which can be understood in terms of an optimised "revolving door" mechanism, open a new path towards the development of better solid-state electrolytes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Focused ion beam induced growth of monocrystalline InAs nanowires

We investigate monocrystalline InAs nanowires (NWs) which are grown by molecular beam epitaxy (MBE) and induced by focused ion beam (FIB) implanted Au spots. With this unique combination of methods an increase of the aspect ratio, i.e. the length to width ratio, of the grown NWs up to 300 was achieved. To control the morphology and crystalline structure of the NWs, the growth parameters like temperature, flux ratios and implantation fluence are varied and optimized. Furthermore, the influence of the used molecular arsenic species, in particular the As$_2$ to As$_4$ ratio, is investigated and adjusted. In addition to the high aspect ratio, this optimization results in the growth of monocrystalline InAs NWs with a negligible number of stacking faults. Single NWsx were placed site-controlled by FIB implantation, which supplements the working field of area growth.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Reconstruction of nuclear quadrupole interaction in (In,Ga)As/GaAs quantum dots observed by transmission electron microscopy

A microscopic study of the individual annealed (In,Ga)As/GaAs quantum dots is done by means of high-resolution transmission electron microscopy. The Cauchy-Green strain-tensor component distribution and the chemical composition of the (In,Ga)As alloy are extracted from the microscopy images. The image processing allows for the reconstruction of the strain-induced electric-field gradients at the individual atomic columns extracting thereby the magnitude and asymmetry parameter of the nuclear quadrupole interaction. Nuclear magnetic resonance absorption spectra are analyzed for parallel and transverse mutual orientations of the electric-field gradient and a static magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Stabilizing nuclear spins around semiconductor electrons via the interplay of optical coherent population trapping and dynamic nuclear polarization

We experimentally demonstrate how coherent population trapping (CPT) for donor-bound electron spins in GaAs results in autonomous feedback that prepares stabilized states for the spin polarization of nuclei around the electrons. CPT was realized by excitation with two lasers to a bound-exciton state. Transmission studies of the spectral CPT feature on an ensemble of electrons directly reveal the statistical distribution of prepared nuclear spin states. Tuning the laser driving from blue to red detuned drives a transition from one to two stable states. Our results have importance for ongoing research on schemes for dynamic nuclear spin polarization, the central spin problem and control of spin coherence.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot

We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si acceptors in p-type AlGaAs/GaAs heterostructures. In particular, we use a surface gate to cause charge migration between Si acceptor sites at T = 40 mK, and detect the ensuing changes in the disorder potential using the MCF. We show that Si acceptors are metastable at T = 40 mK and that raising the device to a temperature T = 4.2 K and returning to T = 40 mK is sufficient to produce complete decorrelation of the MCF. The same decorrelation occurs at T ~ 165 K for electron quantum dots; by comparing with the known trap energy for Si DX centers, we estimate that the shallow acceptor traps in our heterostructures have an activation energy EA ~ 3 meV. Our method can be used to study charge noise and dopant stability towards optimisation of semiconductor materials and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nuclear magnetic resonances in (In,Ga)As/GaAs quantum dots studied by resonant optical pumping

The photoluminescence polarizations of (In,Ga)As/GaAs quantum dots annealed at different temperatures are studied as a function of external magnetic field (Hanle curves). In these dependencies, remarkable resonant features appear due to all-optical nuclear magnetic resonances (NMR) for optical excitation with modulated circular polarization. Application of an additional radio-frequency field synchronously with the polarization modulation strongly modifies the NMR features. The resonances can be related to transitions between different nuclear spin states split by the strain-induced gradient of the crystal field and by the externally applied magnetic field. A theoretical model is developed to simulate quadrupole and Zeeman splittings of the nuclear spins in a strained quantum dot. Comparison with the experiment allows us to uniquely identify the observed resonances. The large broadening of the NMR resonances is attributed to variations of the quadrupole splitting within the quantum dot volume, which is well described by the model.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of quantum states without a semiclassical equivalence bound by a magnetic field gradient

Resonant transmission through electronic quantum states that exist at the zero points of a magnetic field gradient inside a ballistic quantum wire is reported. Since the semiclassical motion along such a line of zero magnetic field takes place in form of unidirectional snake trajectories, these states have no classical equivalence. The existence of such quantum states has been predicted more than a decade ago by theoretical considerations of Reijniers and coworkers [1]. We further show how their properties depend on the amplitude of the magnetic field profile as well as on the Fermi energy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Robust recipe for low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure

The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures, with a 2DEG at typically 100 nm below the surface, are widely studied. In order to explore electron transport in such systems, low-resistance ohmic contacts are required that connect the 2DEG to macroscopic measurement leads at the surface. Here we report on designing and measuring a dedicated device for unraveling the various resistance contributions in such contacts, which include pristine 2DEG series resistance, the 2DEG resistance under a contact, the contact resistance itself, and the influence of pressing a bonding wire onto a contact. We also report here a robust recipe for contacts with very low resistance, with values that do not change significantly for annealing times between 20 and 350 sec, hence providing the flexibility to use this method for materials with different 2DEG depths. The type of heating used for annealing is found to strongly influence the annealing process and hence the quality of the resulting contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anisotropic Zeeman splitting in p-type GaAs quantum point contacts

Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic field orientations. The resulting in-plane g-factors agree qualitatively with those of previous experiments on quantum wires while the quantitative differences can be understood in terms of the enhanced quasi-1D confinement anisotropy. The influence of confinement potential on the anisotropy is discussed and an estimate for the out-of-plane g-factor is obtained which, in contrast to previous experiments, is closer to the theoretical prediction.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Counting statistics of hole transfer in a p-type GaAs quantum dot with dense excitation spectrum

Low-temperature transport experiments on a p-type GaAs quantum dot capacitively coupled to a quantum point contact are presented. The time-averaged as well as time-resolved detection of charging events of the dot are demonstrated and they are used to extract the tunnelling rates into and out of the quantum dot. The extracted rates exhibit a super-linear enhancement with the bias applied across the dot which is interpreted in terms of a dense spectrum of excited states contributing to the transport, characteristic for heavy hole systems. The full counting statistics of charge transfer events and the effect of back action is studied. The normal cumulants as well as the recently proposed factorial cumulants are calculated and discussed in view of their importance for interacting systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations

The role of nuclear spin fluctuations in the dynamic polarization of nuclear spins by electrons is investigated in (In,Ga)As quantum dots. The photoluminescence polarization under circularly polarized optical pumping in transverse magnetic fields (Hanle effect) is studied. A weak additional magnetic field parallel to the optical axis is used to control the efficiency of nuclear spin cooling and the sign of nuclear spin temperature. The shape of the Hanle curve is drastically modified with changing this control field, as observed earlier in bulk semiconductors and quantum wells. However, the standard nuclear spin cooling theory, operating with the mean nuclear magnetic field (Overhauser field), fails to describe the experimental Hanle curves in a certain range of control fields. This controversy is resolved by taking into account the nuclear spin fluctuations owed to the finite number of nuclei in the quantum dot. We propose a model describing cooling of the nuclear spin system by electron spins experiencing fast vector precession in the random Overhauser fields of nuclear spin fluctuations. The model allows us to accurately describe the measured Hanle curves and to determine the parameters of the electron-nuclear spin system of the studied quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Odd and even Kondo effects from emergent localisation in quantum point contacts

A quantum point contact (QPC) is a very basic nano-electronic device: a short and narrow transport channel between two electron reservoirs. In clean channels electron transport is ballistic and the conductance $G$ is then quantised as a function of channel width with plateaus at integer multiples of $2e^2/h$ ($e$ is the electron charge and $h$ Planck's constant). This can be understood in a picture where the electron states are propagating waves, without need to account for electron-electron interactions. Quantised conductance could thus be the signature of ultimate control over nanoscale electron transport. However, even studies with the cleanest QPCs generically show significant anomalies on the quantised conductance traces and there is consensus that these result from electron many-body effects. Despite extensive experimental and theoretical studies understanding of these anomalies is an open problem. We report evidence that the many-body effects have their origin in one or more spontaneously localised states that emerge from Friedel oscillations in the QPC channel. Kondo physics will then also contribute to the formation of the many-body state with Kondo signatures that reflect the parity of the number of localised states. Evidence comes from experiments with length-tunable QPCs that show a periodic modulation of the many-body physics with Kondo signatures of alternating parity. Our results are of importance for assessing the role of QPCs in more complex hybrid devices and proposals for spintronic and quantum information applications. In addition, our results show that tunable QPCs offer a rich platform for investigating many-body effects in nanoscale systems, with the ability to probe such physics at the level of a single site.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Origins of conductance anomalies in a p-type GaAs quantum point contact

Low temperature transport measurements on a p-GaAs quantum point contact are presented which reveal the presence of a conductance anomaly that is markedly different from the conventional `0.7 anomaly'. A lateral shift by asymmetric gating of the conducting channel is utilized to identify and separate different conductance anomalies of local and generic origins experimentally. While the more generic 0.7 anomaly is not directly affected by changing the gate configuration, a model is proposed which attributes the additional conductance features to a gate-dependent coupling of the propagating states to localized states emerging due to a nearby potential imperfection. Finite bias conductivity measurements reveal the interplay between the two anomalies consistently with a two-impurity Kondo model.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Scaling of the Kondo zero bias peak in a hole quantum dot at finite temperatures

We have measured the zero bias peak in differential conductance in a hole quantum dot. We have scaled the experimental data with applied bias and compared to real time renormalization group calculations of the differential conductance as a function of source-drain bias in the limit of zero temperature and at finite temperatures. The experimental data show deviations from the T=0 calculations at low bias, but are in very good agreement with the finite T calculations. The Kondo temperature T_K extracted from the data using T=0 calculations, and from the peak width at 2/3 maximum, is significantly higher than that obtained from finite T calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temperature dependence of hole spin coherence in (In,Ga)As quantum dots measured by mode-locking and echo techniques

The temperature dependence of the coherence time of hole spins confined in self-assembled (In,Ga)As/GaAs quantum dots is studied by spin mode-locking and spin echo techniques. Coherence times limited to about a μs are measured for temperatures below 8 K. For higher temperatures a fast drop occurs down to a few ns over a 10 K range. The hole-nuclear hyperfine interaction appears too weak to account for these limitations. We suggest that spin-orbit related interactions are the decisive sources for hole spin decoherence.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in photoluminescence intensity for the (100) surface, an increase of only 2 - 3 x is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure

The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the 2D plane. We measure an out-of-plane g-factor up to g_perp = 5, which is larger than previous optical studies of g_perp, and is approaching the long predicted but never experimentally verified out-of-plane g-factor of 7.2 for heavy holes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Cyclotron-resonant exciton transfer between the nearly free and strongly localized radiative states of a two-dimensional hole gas in a high magnetic field

Avoided crossing of the emission lines of a nearly free positive trion and a cyclotron replica of an exciton bound to an interface acceptor has been observed in the magneto-photoluminescence spectra of p-doped GaAs quantum wells. Identification of the localized state depended on the precise mapping of the anti-crossing pattern. The underlying coupling is caused by an exciton transfer combined with a resonant cyclotron excitation of an additional hole. The emission spectrum of the resulting magnetically tunable coherent state probes weak localization in the quantum well.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($μ_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($μ_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fifth-order nonlinear optical response of excitonic states in an InAs quantum dot ensemble measured with 2D spectroscopy

Exciton, trion and biexciton dephasing rates are measured within the inhomogeneous distribution of an InAs quantum dot (QD) ensemble using two-dimensional Fourier-transform spectroscopy. The dephasing rate of each excitonic state is similar for all QDs in the ensemble and the rates are independent of excitation density. An additional spectral feature -- too weak to be observed in the time-integrated four-wave mixing signal -- appears at high excitation density and is attributed to the $χ^{\textrm{(5)}}$ biexcitonic nonlinear response.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Hyperfine interaction mediated exciton spin relaxation in (In,Ga)As quantum dots

The population dynamics of dark and bright excitons in (In,Ga)As/GaAs quantum dots is studied by two-color pump-probe spectroscopy in an external magnetic field. With the field applied in Faraday geometry and at T<20 K, the dark excitons decay on a ten nanoseconds time scale unless the magnetic field induces a resonance with a bright exciton state. At these crossings their effective lifetime is drastically shortened due to spin flips of either electron or hole by which the dark excitons are converted into bright ones. Due to the quasielastic character we attribute the origin of these flips to the hyperfine interaction with the lattice nuclei. We compare the exciton spin relaxation times in the two resonances and find that the spin flip involving an electron is approximately 25 times faster than the one of the hole. A temperature increase leads to a considerable, nonmonotonic decrease of the dark exciton lifetime. Here phonon-mediated spin flips due to the spin-orbit interaction gradually become more important.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Intrinsic spin fluctuations reveal the dynamical response function of holes coupled to nuclear spin baths in (In,Ga)As quantum dots

The problem of how single "central" spins interact with a nuclear spin bath is essential for understanding decoherence and relaxation in many quantum systems, yet is highly nontrivial owing to the many-body couplings involved. Different models yield widely varying timescales and dynamical responses (exponential, power-law, Gaussian, etc). Here we detect the small random fluctuations of central spins in thermal equilibrium (holes in singly-charged (In,Ga)As quantum dots) to reveal the timescales and functional form of bath-induced spin relaxation. This spin noise indicates long (400 ns) spin correlation times at zero magnetic field, that increase to $\sim$5 $μ$s as hole-nuclear coupling is suppressed with small (100 G) applied fields. Concomitantly, the noise lineshape evolves from Lorentzian to power-law, indicating a crossover from exponential to inverse-log dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Many-body correlations of electrostatically trapped dipolar excitons

We study the photoluminescence (PL) of a two-dimensional liquid of oriented dipolar excitons in In_{x}Ga_{1-x}As coupled double quantum wells confined to a microtrap. Generating excitons outside the trap and transferring them at lattice temperatures down to T = 240 mK into the trap we create cold quasi-equilibrium bosonic ensembles of some 1000 excitons with thermal de Broglie wavelengths exceeding the excitonic separation. With decreasing temperature and increasing density n <= 5*10^10 cm^{-2} we find an increasingly asymmetric PL lineshape with a sharpening blue edge and a broad red tail which we interpret to reflect correlated behavior mediated by dipolar interactions. From the PL intensity I(E) below the PL maximum at E_{0} we extract at T < 5 K a distinct power law I(E) \sim (E_{0}-E)^-|α| with -|α|\sim -0.8 in the range E_{0}-E of 1.5-4 meV, comparable to the dipolar interaction energy.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Single exciton emission from gate-defined quantum dots

With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization. The quantum dot states are tunable by gate voltage and employing a magnetic field results in a diamagnetic shift. The scheme introduces a new gate-defined platform for creating and controlling optically active quantum dots and opens the route to lithographically defined coupled quantum dot arrays with tunable in-plane coupling and voltage-controlled optical properties of single charge and spin states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Split-gate quantum point contacts with tunable channel length

We report on developing split-gate quantum point contacts (QPCs) that have a tunable length for the transport channel. The QPCs were realized in a GaAs/AlGaAs heterostructure with a two- dimensional electron gas (2DEG) below its surface. The conventional design uses 2 gate fingers on the wafer surface which deplete the 2DEG underneath when a negative gate voltage is applied, and this allows for tuning the width of the QPC channel. Our design has 6 gate fingers and this provides additional control over the form of the electrostatic potential that defines the channel. Our study is based on electrostatic simulations and experiments and the results show that we developed QPCs where the effective channel length can be tuned from about 200 nm to 600 nm. Length-tunable QPCs are important for studies of electron many-body effects because these phenomena show a nanoscale dependence on the dimensions of the QPC channel.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-doping layer with deep-trapping centers (e.g., by co-doping with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transverse rectification in density-modulated two-dimensional electron gases

We demonstrate tunable transverse rectification in a density-modulated two-dimensional electron gas (2DEG). The density modulation is induced by two surface gates, running in parallel along a narrow stripe of 2DEG. A transverse voltage in the direction of the density modulation is observed, i.e. perpendicular to the applied source-drain voltage. The polarity of the transverse voltage is independent of the polarity of the source-drain voltage, demonstrating rectification in the device. We find that the transverse voltage $U_{y}$ depends quadratically on the applied source-drain voltage and non-monotonically on the density modulation. The experimental results are discussed in the framework of a diffusion thermopower model.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Generation and detection of mode-locked spin coherence in (In,Ga)As/GaAs quantum dots by laser pulses of long duration

Using optical pulses of variable duration up to 80 ps, we report on spin coherence initialization and its subsequent detection in n-type singly-charged quantum dots, subject to a transverse magnetic field, by pump-probe techniques. We demonstrate experimentally and theoretically that the spin coherence generation and readout efficiencies are determined by the ratio of laser pulse duration to spin precession period: An increasing magnetic field suppresses the spin coherence signals for a fixed duration of pump and/or probe pulses, and this suppression occurs for smaller fields the longer the pulse duration is. The reason for suppression is the varying spin orientation due to precession during pulse action.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot

We report the observation of Kondo physics in a spin- 3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the Zeeman spin-splitting of the zero-bias peak in the differential conductance is independent of gate voltage. Second, this splitting is twice as large as the splitting for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly-anisotropic, and attribute this to the strong spin-orbit interaction for holes in GaAs.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Optical control of coherent interactions between quantum dot electron spins

Coherent interactions between spins in quantum dots are a key requirement for quantum gates. We have performed pump-probe experiments in which pulsed lasers emitting at different photon energies manipulate two distinct subsets of electron spins within an inhomogeneous InGaAs quantum dot ensemble. The spin dynamics are monitored through their precession about an external magnetic field. These measurements demonstrate spin precession phase shifts and modulations of the magnitude of one subset of oriented spins after optical orientation of the second subset. The observations are consistent with results from a model using a Heisenberg-like interaction with microeV-strength.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Probing single charge fluctuations in a semiconductor with laser spectroscopy on a quantum dot

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +-5 nm resolution. The results identify and quantify the main source of charge noise in the commonly-used optical field-effect devices. Based on this understanding we achieve routinely close-totransform-limited quantum dot optical linewidths.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultrafast mapping of optical polarization states onto spin coherence of localized electrons in a semiconductor

We experimentally demonstrate an ultrafast method for preparing spin states of donor-bound electrons in GaAs with single laser pulses. Each polarization state of a preparation pulse has a direct mapping onto a spin state, with bijective correspondence between the Poincaré-sphere (for photon polarization) and Bloch-sphere (for spin) state representations. The preparation is governed by a stimulated Raman process and occurs orders of magnitude faster than the spontaneous emission and spin dephasing. Similar dynamics governs our ultrafast optical Kerr detection of the spin coherence, thus getting access to spin state tomography. Experiments with double preparation pulses show an additive character for the preparation method. Utilization of these phenomena is of value for quantum information schemes.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Effect of pump-probe detuning on the Faraday rotation and ellipticity signals of mode-locked spins in InGaAs quantum dots

We have studied the Faraday rotation and ellipticity signals in ensembles of singly-charged (In,Ga)As/GaAs quantum dots by pump-probe spectroscopy. For degenerate pump and probe we observe that the Faraday rotation signal amplitude first grows with increasing the time separation between pump and probe before a decay is observed for large temporal separations. The temporal behavior of the ellipticity signal, on the other hand, is regular: its amplitude decays with the separation. By contrast, for detuned pump and probe the Faraday rotation and ellipticty signals both exhibit similar and conventional behavior. The experimental results are well described in the frame of a recently developed microscopic theory [Phys. Rev. B 80, 104436 (2009)]. The comparison between calculations and experimental data allows us to provide insight into the spectral dependence of the electron spin precession frequencies and extract the electron g-factor dependence on energy.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electromagnetically Induced Transparency with an Ensemble of Donor-Bound Electron Spins in a Semiconductor

We present measurements of electromagnetically induced transparency with an ensemble of donor- bound electrons in low-doped n-GaAs. We used optical transitions from the Zeeman-split electron spin states to a bound trion state in samples with optical densities of 0.3 and 1.0. The electron spin dephasing time T* \approx 2 ns was limited by hyperfine coupling to fluctuating nuclear spins. We also observe signatures of dynamical nuclear polarization, but find these effects to be much weaker than in experiments that use electron spin resonance and related experiments with quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Evidence for localization and 0.7 anomaly in hole quantum point contacts

Quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are investigated by low-temperature electrical conductance spectroscopy measurements. Besides one-dimensional conductance quantization in units of $2e^{2}/h$ a pronounced extra plateau is found at about $0.7(2e^{2}/h)$ which possesses the characteristic properties of the so-called "0.7 anomaly" known from experiments with n-type samples. The evolution of the 0.7 plateau in high perpendicular magnetic field reveals the existence of a quasi-localized state and supports the explanation of the 0.7 anomaly based on self-consistent charge localization. These observations are robust when lateral electrical fields are applied which shift the relative position of the electron wavefunction in the quantum point contact, testifying to the intrinsic nature of the underlying physics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nanostructures in p-GaAs with improved tunability

A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Polarization-preserving confocal microscope for optical experiments in a dilution refrigerator with high magnetic field

We present the design and operation of a fiber-based cryogenic confocal microscope. It is designed as a compact cold-finger that fits inside the bore of a superconducting magnet, and which is a modular unit that can be easily swapped between use in a dilution refrigerator and other cryostats. We aimed at application in quantum optical experiments with electron spins in semiconductors and the design has been optimized for driving with, and detection of optical fields with well-defined polarizations. This was implemented with optical access via a polarization maintaining fiber together with Voigt geometry at the cold finger, which circumvents Faraday rotations in the optical components in high magnetic fields. Our unit is versatile for use in experiments that measure photoluminescence, reflection, or transmission, as we demonstrate with a quantum optical experiment with an ensemble of donor-bound electrons in a thin GaAs film.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin dynamics of electrons and holes in InGaAs/GaAs quantum wells at milliKelvin temperatures

The carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very different spectral dependencies, from which nonetheless consistent information on the spin dynamics can be obtained, in agreement with theoretical predictions. The mechanisms of long-lived spin coherence generation are discussed for the cases of trion and exciton resonant excitation. We demonstrate that carrier localization leads to a saturation of spin relaxation times at 45 ns for electrons below 4.5 K and at 2 ns for holes below 2.3 K. The underlying spin relaxation mechanisms are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanisms for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well, but also for electrons in a deeper bulk layer.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures

We study the Zeeman spin-splitting in hole quantum wires oriented along the $[011]$ and $[01\bar{1}]$ crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data shows that the spin-splitting can be switched `on' (finite $g^{*}$) or `off' (zero $g^{*}$) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the properties of the wire are identical for the two orientations with respect to the crystallographic axes. We also find that the $g$-factor in the parallel orientation decreases as the wire is narrowed. This is in contrast to electron quantum wires, where the $g$-factor is enhanced by exchange effects as the wire is narrowed. This is evidence for a $k$-dependent Zeeman splitting that arises from the spin-3/2 nature of holes.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system

We present time-resolved Kerr rotation measurements of electron spin dynamics in a GaAs/AlGaAs heterojunction system that contains a high-mobility two-dimensional electron gas (2DEG). Due to the complex layer structure of this material the Kerr rotation signals contain information from electron spins in three different layers: the 2DEG layer, a GaAs epilayer in the heterostructure, and the underlying GaAs substrate. The 2DEG electrons can be observed at low pump intensities, using that they have a less negative g-factor than electrons in bulk GaAs regions. At high pump intensities, the Kerr signals from the GaAs epilayer and the substrate can be distinguished when using a barrier between the two layers that blocks intermixing of the two electron populations. This allows for stronger pumping of the epilayer, which results in a shift of the effective g-factor. Thus, three populations can be distinguished using differences in g-factor. We support this interpretation by studying how the spin dynamics of each population has its unique dependence on temperature, and how they correlate with time-resolved reflectance signals.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Quantized magnetic confinement in quantum wires

Ballistic quantum wires are exposed to longitudinal profiles of perpendicular magnetic fields composed of a spike (magnetic barrier) and a homogeneous part. An asymmetric magnetoconductance peak as a function of the homogeneous magnetic field is found, comprising quantized conductance steps in the interval where the homogeneous magnetic field and the magnetic barrier have identical polarities, and a characteristic shoulder with several resonances in the interval of opposite polarities. The observations are interpreted in terms of inhomogeneous diamagnetic shifts of the quantum wire modes leading to magnetic confinement.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Spin noise of electrons and holes in self-assembled quantum dots

We measure the frequency spectra of random spin fluctuations, or "spin noise", in ensembles of (In,Ga)As/GaAs quantum dots (QDs) at low temperatures. We employ a spin noise spectrometer based on a sensitive optical Faraday rotation magnetometer that is coupled to a digitizer and field-programmable gate array, to measure and average noise spectra from 0-1 GHz continuously in real time with sub-nanoradian/root-Hz sensitivity. Both electron and hole spin fluctuations generate distinct noise peaks, whose shift and broadening with magnetic field directly reveal their g-factors and dephasing rates within the ensemble. A large, energy-dependent anisotropy of the in-plane hole g-factor is clearly exposed, reflecting systematic variations in the average QD confinement potential.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

The Knight field and the local nuclear dipole-dipole field in an (In,Ga)As quantum dot ensemble

We present a comprehensive investigation of the electron-nuclear system of negatively charged InGaAs/GaAs self-assembled quantum dots under the influence of weak external magnetic fields (up to 2 mT). We demonstrate that, in contrast to conventional semiconductor systems, these small fields have a profound influence on the electron spin dynamics, via the hyperfine interaction. Quantum dots, with their comparatively limited number of nuclei, present electron-nuclear behavior that is unique to low-dimensional systems. We show that the conventional Hanle effect used to measure electron spin relaxation times, for example, cannot be used in these systems when the spin lifetimes are long. An individual nucleus in the QD is subject to milli-Tesla effective fields, arising from the interaction with its nearest-neighbors and with the electronic Knight field. The alignment of each nucleus is influenced by application of external fields of the same magnitude. A polarized nuclear system, which may have an effective field strength of several Tesla, may easily be influenced by these milli-Tesla fields. This in turn has a dramatic effect on the electron spin dynamics, and we use this technique to gain a measure of both the dipole-dipole field and the maximum Knight field in our system, thus allowing us to estimate the maximum Overhauser field that may be generated at zero external magnetic field. We also show that one may fine-tune the angle which the Overhauser field makes with the optical axis.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Ultrafast optical rotations of electron spins in quantum dots

Coherent manipulation of quantum bits (qubits) on time scales much shorter than the coherence time is a key prerequisite for quantum information processing. Electron spins in quantum dots (QDs) are particularly attractive for implementations of qubits. Efficient optical methods for initialization and readout of spins have been developed in recent years. Spin coherence times in the microsecond range have been demonstrated, so that spin control by picosecond optical pulses would be highly desirable. Then a large number of spin rotations could be performed while coherence is maintained. A major remaining challenge is demonstration of such rotations with high fidelity. Here we use an ensemble of QD electron spins focused into a small number of precession modes about a magnetic field by periodic optical pumping. We demonstrate ultrafast optical rotations of spins about arbitrary axes on a picosecond time scale using laser pulses as control fields.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Collective single mode precession of electron spins in a quantum dot ensemble

We show that the spins of all electrons, each confined in a quantum dot of an (In,Ga)As/GaAs dot ensemble, can be driven into a single mode of precession about a magnetic field. This regime is achieved by allowing only a single mode within the electron spin precession spectrum of the ensemble to be synchronized with a train of periodic optical excitation pulses. Under this condition a nuclei induced frequency focusing leads to a shift of all spin precession frequencies into the synchronized mode. The macroscopic magnetic moment of the electron spins that is created in this regime precesses without dephasing.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Non-local Aharonov-Bohm conductance oscillations in an asymmetric quan-tum ring

We investigate ballistic transport and quantum interference in a nanoscale quantum wire loop fab-ricated as a GaAs/AlGaAs field-effect heterostructure. Four-terminal measurements of current and voltage characteristics as a function of top gate voltages show negative bend resistance as a clear signature of ballistic transport. In perpendicular magnetic fields phase-coherent transport leads to Aharonov-Bohm (AB) conductance oscillations which show equal amplitudes in the local and the non-local measurement at a temperature of 1.5 K and above. We attribute this novel observation to the symmetry of the orthogonal cross junctions connecting the four quantum wire leads with the asymmetric quantum wire ring.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures

Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters depend on the depth of the 2DEG below the surface. Combined with transmission electron microscopy and energy-dispersive X-ray spectrometry studies of the annealed contacts, our results allow for identifying the annealing mechanism and proposing a model that can predict optimal annealing parameters for a certain heterostructure.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Experimental imaging and atomistic modeling of electron and hole quasiparticle wave functions in InAs/GaAs quantum dots

We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) piezoelectricity on the confined carriers and (iv) observe a peculiar charging sequence of holes that violates the Aufbau principle.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Persistence of the 0.7 anomaly of quantum point contacts in high magnetic fields

The spin degeneracy of the lowest subband that carries one-dimensional electron transport in quantum point contacts appears to be spontaneously lifted in zero magnetic field due to a phenomenon that is known as the 0.7 anomaly. We measured this energy splitting, and studied how it evolves into a splitting that is the sum of the Zeeman effect and a field-independent exchange contribution when applying a magnetic field. While this exchange contribution shows sample-to-sample fluctuations, it is for all QPCs correlated with the zero-field splitting of the 0.7 anomaly. This provides evidence that the splitting of the 0.7 anomaly is dominated by this field-independent exchange splitting.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Sequential and co-tunneling behavior in the temperature-dependent thermopower of few-electron quantum dots

We have studied the temperature dependent thermopower of gate-defined, lateral quantum dots in the Coulomb blockade regime using an electron heating technique. The line shape of the thermopower oscillations depends strongly on the contributing tunneling processes. Between 1.5 K and 40 mK a crossover from a pure sawtooth- to an intermitted sawtooth-like line shape is observed. The latter is attributed to the increasing dominance of cotunneling processes in the Coulomb blockade regime at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Magnetotransport in C-doped AlGaAs heterostructures

High-quality C-doped p-type AlGaAs heterostructures with mobilities exceeding 150 000 cm$^2$/Vs are investigated by low-temperature magnetotransport experiments. We find features of the fractional quantum Hall effect as well as a highly resolved Shubnikov-de Haas oscillations at low magnetic fields. This allows us to determine the densities, effective masses and mobilities of the holes populating the spin-split subbands arising from the lack of inversion symmetry in these structures.

0 citations0 reviewsNo code linkedOpen access
preprint1999arXiv

Electron-Assisted Hopping in Two Dimensions

We have studied the non-ohmic effects in the conductivity of a two-dimensional system which undergoes the crossover from weak to strong localization with decreasing electron concentration. When the electrons are removed from equilibrium with phonons, the hopping conductivity depends only on the electron temperature. This indicates that the hopping transport in a system with a large localization length is assisted by electron-electron interactions rather than by the phonons.

0 citations0 reviewsNo code linkedOpen access