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Researcher profile

D. Reuter

D. Reuter contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.dis-nncond-mat.mes-hallcond-mat.supr-conphysics.opticsquant-ph

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Published work

6 published item(s)

preprint2021arXiv

Nonlinear down-conversion in a single quantum dot

Photonic quantum technologies$^1$, with applications in quantum communication, sensing as well as quantum simulation and computing, are on the verge of becoming commercially available. One crucial building block are tailored nanoscale integratable quantum light sources, matching the specific needs of use-cases. Several different approaches to realize solid-state quantum emitters$^2$ with high performance$^3$ have been pursued. However, the properties of the emitted single photons are always defined by the individual quantum light source and despite numerous quantum emitter tuning techniques$^{4-7}$, scalability is still a major challenge. Here we show an emitter-independent method to tailor and control the properties of the single photon emission. We demonstrate a laser-controlled down-conversion process from an excited state of a quantum three-level system$^8$. Starting from a biexciton state, a tunable control laser field defines a virtual state in a stimulated process. From there, spontaneous emission to the ground state leads to optically controlled single photon emission. Based on this concept, we demonstrate energy tuning of the single photon emission with a control laser field. The nature of the involved quantum states furthermore provides a unique basis for the future control of polarization and bandwidth, as predicted by theory$^{9,10}$. Our demonstration marks an important step towards tailored single photon emission from a photonic quantum system based on quantum optical principles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ionic conductivity and relaxation dynamics in plastic-crystals with nearly globular molecules

We have performed a dielectric investigation of the ionic charge transport and the relaxation dynamics in plastic-crystalline 1-cyano-adamantane (CNA) and in two mixtures of CNA with the related plastic crystals adamantane or 2-adamantanon. Ionic charge carriers were provided by adding 1% of Li salt. The molecules of these compounds have nearly globular shape and, thus, the so-called revolving-door mechanism assumed to promote ionic charge transport via molecular reorientations in other PC electrolytes, should not be active here. Indeed, a comparison of the dc resistivity and the reorientational alpha-relaxation times in the investigated PCs, reveals complete decoupling of both dynamics. Similar to other PCs, we find a significant mixing-induced enhancement of the ionic conductivity. Finally, these solid-state electrolytes reveal a second relaxation process, slower than the alpha-relaxation, which is related to ionic hopping. Due to the mentioned decoupling, it can be unequivocally detected and is not superimposed by the reorientational contributions as found for most other ionic conductors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain-driven InAs island growth on top of GaAs(111) nanopillars

We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars results in InAs islands with diameters < 30 nm exhibiting predominantly rounded triangular in-plane shapes. The islands show a tendency to grow at positions displaced from the center towards the pillar edge. Atomistic molecular statics simulations evidence that triangular-prismatic islands centered to the pillar axis with diameters smaller than that of the nanopillars are energetically favored. Moreover, we reveal the existence of minimum-energy states for off-axis island positions, in agreement with the experiment. These findings are interpreted by evaluating the spatial strain distributions and the number of broken bonds of surface atoms as a measure for the surface energy. The preferred off-axis island positions can be understood in terms of an increased compliancy of the GaAs nanopillar beneath the island because of the vicinity of free surfaces, leading to a reduction of strain energy. The influence of surface steps on the energy of the system is addressed as well.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A

Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbor distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150 - 350 C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to a further reduction of adatom migration length. A common feature of the growth morphology for all other explored conditions is the formation of merged hillocks or pyramids with well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Structure, superconductivity, and magnetism in Rb1-xFe1.6Se2-zSz

The single-crystal growth, stoichiometry, and structure of Rb1-xFe2-ySe2-zSz crystals with substitution of Se by S are reported. The variation of the magnetic and thermodynamic parameters of samples was studied by differential-scanning calorimetry, magnetic susceptibility, conductivity, and specific heat. The experimental results are discussed within a T-z phase diagram, which includes vacancy-ordered and vacancy-disordered antiferromagnetic (AFM), superconducting (SC), and non-superconducting phases. The structural study revealed change in the local environment of the Fe tetrahedrons depending on substitution: a reduction of the Fe-Fe and Fe-Ch(chalcogen) bond lengths and a tendency for the six out of eight bond angles to approach values for a regular tetrahedron suggesting a reduction of structural distortions with substitution. With increasing substitution, a lowering of the superconducting transition temperature Tc was observed; the percolation threshold for the SC state is located at the substitution z = 1.2. The SC state was found to coexist with the AFM state that persists in all samples independent of substitution. The temperature of the transition into the AFM state TN shows a monotonous decrease indicating a weakening of the AFM interactions with increasing substitution. The AFM phase exhibits an iron-vacancy-ordered structure below the structural transition at Ts. The temperature Ts shows a non-monotonous variation: a decrease with increasing z up to 1.3, followed by an increase for further increasing z. The suppression of the superconductivity with substitution is accompanied by a significant reduction of the density of states at the Fermi energy and a weakening of the electronic correlations in the studied system.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Robust recipe for low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure

The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures, with a 2DEG at typically 100 nm below the surface, are widely studied. In order to explore electron transport in such systems, low-resistance ohmic contacts are required that connect the 2DEG to macroscopic measurement leads at the surface. Here we report on designing and measuring a dedicated device for unraveling the various resistance contributions in such contacts, which include pristine 2DEG series resistance, the 2DEG resistance under a contact, the contact resistance itself, and the influence of pressing a bonding wire onto a contact. We also report here a robust recipe for contacts with very low resistance, with values that do not change significantly for annealing times between 20 and 350 sec, hence providing the flexibility to use this method for materials with different 2DEG depths. The type of heating used for annealing is found to strongly influence the annealing process and hence the quality of the resulting contacts.

0 citations0 reviewsNo code linkedOpen access