Temperature-dependent thermal conductivity in Mg-doped and undoped ββ-Ga2O3\mathrm{Ga_2O_3} bulk-crystals

preprint2014arXivOpen access

Abstract

For ββ-Ga2O3\mathrm{Ga_2O_3} only little information exist concerning the thermal properties, especially the thermal conductivity λλ. Here, the thermal conductivity is measured by applying the electrical 3ωω-method on Czochralski-grown ββ-Ga2O3\mathrm{Ga_2O_3} bulk crystals, which have a thickness of 200 μm200~\mathrm{μm} and 800 μm800~\mathrm{μm}. At room temperature the thermal conductivity along the [100]-direction in Mg-doped electrical insulating and undoped semiconducting ββ-Ga2O3\mathrm{Ga_2O_3} is confirmed as 13±1 Wm−1K−113\pm 1~\mathrm{Wm^{-1}K^{-1}} for both crystals. The thermal conductivity increases for decreasing temperature down to 25 K25~\mathrm{K} to λ(25 K)=(5.3±0.6)⋅102 Wm−1K−1λ(25~\mathrm{K})=(5.3\pm 0.6)\cdot 10^2~\mathrm{Wm^{-1}K^{-1}}. The phonon contribution of λλ dominates over the electron contribution below room temperature. The observed function λ(T)λ(T) is in accord with phonon-phonon-Umklapp scattering and the Debye-model for the specific heat at T≳90 KT\gtrsim 90~\mathrm{K} which is about 0.10.1 fold of the Debye-temperature θDθ_\mathrm{D}. Here a detailed discussion of the phonon-phonon-Umklapp scattering for T<θDT< θ_\mathrm{D} is carried out. The influence of point defect scattering is considered for T<100 KT<100~\mathrm{K}.

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