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Yuewei Zhang

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Published work

10 published item(s)

preprint2026arXiv

FAQ: Mitigating Quantization Error via Regenerating Calibration Data with Family-Aware Quantization

Although post-training quantization (PTQ) provides an efficient numerical compression scheme for deploying large language models (LLMs) on resource-constrained devices, the representativeness and universality of calibration data remain a core bottleneck in determining the accuracy of quantization parameters. Traditional PTQ methods typically rely on limited samples, making it difficult to capture the activation distribution during the inference phase, leading to biases in quantization parameters. To address this, we propose \textbf{FAQ} (Family-Aware Quantization), a calibration data regeneration framework that leverages prior knowledge from LLMs of the same family to generate high-fidelity calibration samples. Specifically, FAQ first inputs the original calibration samples into a larger LLM from the same family as the target model, regenerating a series of high-fidelity calibration data using a highly consistent knowledge system. Subsequently, this data, carrying Chain-of-Thought reasoning and conforming to the expected activation distribution, undergoes group competition under expert guidance to select the best samples, which are then re-normalized to enhance the effectiveness of standard PTQ. Experiments on multiple model series, including Qwen3-8B, show that FAQ reduces accuracy loss by up to 28.5\% compared to the baseline with original calibration data, demonstrating its powerful potential and contribution.

preprint2022arXiv

Strain and composition dependencies of the near bandgap optical transitions in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys with coherent biaxial in-plane strain on (010) Ga$_2$O$_3$

The bowing of the energy of the three lowest band-to-band transitions in $β$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach. The DFT calculations of the electronic band structure of both, $β$-Ga$_2$O$_3$ and $θ$-Al$_2$O$_3$, allow extracting of the linear portion of the energy shift in the alloys, and provide a method for quantifying the role of coherent strain present in the $β$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ thin films on (010) $β$-Ga$_2$O$_3$ substrates. The energies of band-to-band transitions were obtained using the spectroscopic ellipsometry eigenpolarization model approach [A. Mock et al., Phys. Rev. B 95, 165202 (2017)]. After subtracting the effects of strain which also induces additional bowing and after subtraction of the linear portion of the energy shift due to alloying, the bowing parameters associated with the three lowest band-to-band transitions in monoclinic $β$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ are found.

preprint2020arXiv

Zeeman Spin-Splitting in the (010) $β$-Ga2O3 Two-Dimensional Electron Gas

Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau levels in the (010) Ga2O3 two-dimensional electron gas (2DEG) has been studied. Analysis indicates that the spin-splitting results from the Zeeman effect. By fitting the both the first and second harmonic of the oscillations as a function of magnetic field, we determine the magnitude of the Zeeman splitting to be 0.4$\hbarω_c$, with a corresponding effective g-factor of 2.7, for magnetic field perpendicular to the 2DEG.

preprint2016arXiv

AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance of 1.9x10-6 ohm.cm2 to n-Al0.75Ga0.25N channels (bandgap ~ 5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

preprint2016arXiv

Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction higher than 50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced 3D charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. The design of graded tunnel junction structures could lead to low tunneling resistance below 10-3 Ohm cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance, and can enable efficient emitters in the UV-C wavelength range.

preprint2016arXiv

Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes

We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate the compensation and doping in p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62% were achieved for tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs, and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.

preprint2016arXiv

High Current Density 2D/3D Esaki Tunnel Diodes

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

preprint2016arXiv

Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance

We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage of ~1.6-2 V. Thermionic PN junctions with tunnel contact to the p-layer exhibited forward current density of 150 kA/cm^2 at 7.6 V, with a low series device resistance of 1 x 10^-5 ohm.cm^2.

preprint2015arXiv

Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs

The efficiency of ultra violet LEDs is critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling-based top-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni nano-clusters as etch mask. The top surface roughened LEDs were found to enhance external quantum efficiency by over 40% for UV LEDs with a peak emission wavelength of 326 nm. The method described here can enable highly efficient UV LEDs without the need for complex manufacturing methods such as flip chip bonding.

preprint2015arXiv

Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters

Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient ultraviolet solid state emitters remains a challenge due to the low p-type conductivity and high contact resistance in wide band gap AlGaN-based ultra-violet light emitters. In this work, we show that efficient interband tunneling can be used for non-equilibrium injection of holes into ultraviolet emitters. Polarization-engineered tunnel junctions were used to enhance tunneling probability by several orders of magnitude over a PN homojunction, leading to highly efficient tunnel injection of holes to ultraviolet light emitters. This demonstration of efficient interband tunneling introduces a new paradigm for design of ultra-violet light emitting diodes and diode lasers, and enables higher efficiency and lower cost ultra-violet emitters.