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Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance

We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage of ~1.6-2 V. Thermionic PN junctions with tunnel contact to the p-layer exhibited forward current density of 150 kA/cm^2 at 7.6 V, with a low series device resistance of 1 x 10^-5 ohm.cm^2.

preprint2016arXivOpen access
Fatih AkyolSriram KrishnamoorthyYuewei ZhangJared M. JohnsonJinwoo HwangSiddharth Rajan
cond-mat.mes-hallcond-mat.mtrl-sci
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Fatih AkyolSriram KrishnamoorthyYuewei ZhangJared M. JohnsonJinwoo HwangSiddharth Rajan

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