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Sriram Krishnamoorthy

Sriram Krishnamoorthy appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.app-phcond-mat.mes-hallquant-phphysics.ins-detDistributed, Parallel, and Cluster Computingmath.NANumerical Analysisphysics.chem-phphysics.opticsProgramming Languagescond-mat.othereess.SYMathematical SoftwarePerformancephysics.comp-phSoftware EngineeringSymbolic ComputationSystems and Control

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Published work

40 published item(s)

preprint2026arXiv

Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure

Periodic metallic gratings on substrates can support a range of electromagnetic modes, such as leaky waveguide, guided-resonant, and Fabry-Perot (FP) cavity modes, which can strongly modulate optical transmission under resonant excitation. Here, we investigate how this coupling can be dynamically manipulated through charge-density control in a laterally patterned AlGaN/GaN heterostructure. The structure comprises metallic stripes separated by regions containing a two-dimensional electron gas (2DEG), forming a periodically modulated interface whose electromagnetic response is governed by the charge density between the stripes. In the unbiased state, the conductive 2DEG screens the incident terahertz field and suppresses excitation of guided modes. When the 2DEG is depleted, the change in boundary conditions allows efficient coupling into substrate resonances, producing a strong modulation at particular frequencies where extraordinary optical transmission (EOT) through the structure takes place. The results highlight the sensitive dependence of guided-mode-resonance (GMR) mediated EOT on inter-stripe charge distribution and demonstrate a direct interplay between carrier dynamics and resonant electromagnetic phenomena in the terahertz regime.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$

Field-plated (FP) depletion-mode MOVPE-grown $β$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L$_{GD}$ = 34.5 $μ$m exhibits an ON current (I$_{DMAX}$) of 56 mA/mm, a high I$_{ON}$/I$_{OFF}$ ratio $>$ 10$^8$ and a very low reverse leakage until catastrophic breakdown at $\sim$ 4.4kV. The highest measurable V$_{BR}$ recorded was 4.57 kV (L$_{GD}$ = 44.5 $μ$m). An LFOM of 132 MW/cm$^2$ was calculated for a V$_{BR}$ of $\sim$ 4.4 kV. The reported results are the first $>$ 4kV-class Ga$_2$O$_3$ transistors to surpass the theoretical FOM of Silicon. These are also the highest I$_{DMAX}$ and lowest R$_{ON}$ values achieved simultaneously for any $β$-Ga$_2$O$_3$ device with V$_{BR}$ $>$ 4kV to date. This work highlights that high breakdown voltages (V$_{BR}$), high lateral figure of merit (LFOM) and high ON currents can be achieved simultaneously in $β$-Ga$_2$O$_3$ lateral transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends

In this work, bulk Czochralski-grown single crystals of 10 mol. % Al2O3 alloyed B-Ga2O3 - monoclinic 10% AGO or B-(Al0.1Ga0.9)2O3 - are obtained, which show +0.20 eV increase in the bandgap compared with unintentionally doped B-Ga2O3. Further, growths of 33% AGO - B-(Al0.33Ga0.67)2O3 - and 50% AGO - B-(Al0.5Ga0.5)2O3 or B-AlGaO3 - produce polycrystalline single-phase monoclinic material (B-AGO). All three compositions are investigated by x-ray diffraction, Raman spectroscopy, optical absorption, and 27Al nuclear magnetic resonance (NMR). By investigating single phase B-AGO over a large range of Al2O3 concentrations (10 - 50 mol. %), broad trends in the lattice parameter, vibrational modes, optical bandgap, and crystallographic site preference are determined. All lattice parameters show a linear trend with Al incorporation. According to NMR, aluminum incorporates on both crystallographic sites of B-Ga2O3, with a slight preference for the octahedral (GaII) site, which becomes more disordered with increasing Al. Single crystals of 10% AGO were also characterized by x-ray rocking curve, transmission electron microscopy, purity (glow discharge mass spectroscopy and x-ray fluorescence), optical transmission (200 nm - 20 um wavelengths), and resistivity. These measurements suggest that electrical compensation by impurity acceptor doping is not the likely explanation for high resistivity, but rather the shift of a hydrogen level from a shallow donor to a deep acceptor due to Al alloying. .. Cont. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 131 155702.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Efficient Hierarchical State Vector Simulation of Quantum Circuits via Acyclic Graph Partitioning

Early but promising results in quantum computing have been enabled by the concurrent development of quantum algorithms, devices, and materials. Classical simulation of quantum programs has enabled the design and analysis of algorithms and implementation strategies targeting current and anticipated quantum device architectures. In this paper, we present a graph-based approach to achieve efficient quantum circuit simulation. Our approach involves partitioning the graph representation of a given quantum circuit into acyclic sub-graphs/circuits that exhibit better data locality. Simulation of each sub-circuit is organized hierarchically, with the iterative construction and simulation of smaller state vectors, improving overall performance. Also, this partitioning reduces the number of passes through data, improving the total computation time. We present three partitioning strategies and observe that acyclic graph partitioning typically results in the best time-to-solution. In contrast, other strategies reduce the partitioning time at the expense of potentially increased simulation times. Experimental evaluation demonstrates the effectiveness of our approach.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films

We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and total contact resistance (Rc) of 1.62e-7 Ohm.cm^2 and 0.023 Ohm.mm were realized for $β$-Ga$_2$O$_3$: Si films with n > 3e20 cm^-3. TLM structures were also fabricated on heavily Si doped coherently strained $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ (x=12%, 17% and 22%) films. The film with 12% Al composition (n=1.23e20 cm^-3) showed \r{ho}c of 5.85e-6 Ohm.cm^2, but it increased to 2.19e-4 Ohm.cm^2 for a layer with a 22% Al composition. Annealing the samples post metal deposition has generally led to a decrease in contact resistance, but for high Al content $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$, the contact resistance did not change significantly after the annealing process. The low contact resistance values measured in this work are very promising for the fabrication of high frequency power devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Optimized Quantum Phase Estimation for Simulating Electronic States in Various Energy Regimes

While quantum algorithms for simulation exhibit better asymptotic scaling than their classical counterparts, they currently cannot be implemented on real-world devices. Instead, chemists and computer scientists rely on costly classical simulations of these quantum algorithms. In particular, the quantum phase estimation (QPE) algorithm is among several approaches that have attracted much attention in recent years for its genuine quantum character. However, it is memory-intensive to simulate and intractable for moderate system sizes. This paper discusses the performance and applicability of QPESIM, a new simulation of the QPE algorithm designed to take advantage of modest computational resources. In particular, we demonstrate the versatility of QPESIM in simulating various electronic states by examining the ground and core-level states of H$_2$O. For these states, we also discuss the effect of the active-space size on the quality of the calculated energies. For the high-energy core-level states, we demonstrate that new QPE simulations for active spaces defined by 15 active orbitals significantly reduce the errors in core-level excitation energies compared to earlier QPE simulations using smaller active spaces.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

QASMBench: A Low-level QASM Benchmark Suite for NISQ Evaluation and Simulation

The rapid development of quantum computing (QC) in the NISQ era urgently demands a low-level benchmark suite and insightful evaluation metrics for characterizing the properties of prototype NISQ devices, the efficiency of QC programming compilers, schedulers and assemblers, and the capability of quantum system simulators in a classical computer. In this work, we fill this gap by proposing a low-level, easy-to-use benchmark suite called QASMBench based on the OpenQASM assembly representation. It consolidates commonly used quantum routines and kernels from a variety of domains including chemistry, simulation, linear algebra, searching, optimization, arithmetic, machine learning, fault tolerance, cryptography, etc., trading-off between generality and usability. To analyze these kernels in terms of NISQ device execution, in addition to circuit width and depth, we propose four circuit metrics including gate density, retention lifespan, measurement density, and entanglement variance, to extract more insights about the execution efficiency, the susceptibility to NISQ error, and the potential gain from machine-specific optimizations. Applications in QASMBench can be launched and verified on several NISQ platforms, including IBM-Q, Rigetti, IonQ and Quantinuum. For evaluation, we measure the execution fidelity of a subset of QASMBench applications on 12 IBM-Q machines through density matrix state tomography, which comprises 25K circuit evaluations. We also compare the fidelity of executions among the IBM-Q machines, the IonQ QPU and the Rigetti Aspen M-1 system. QASMBench is released at: http://github.com/pnnl/QASMBench.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

COMET: A Domain-Specific Compilation of High-Performance Computational Chemistry

The computational power increases over the past decades havegreatly enhanced the ability to simulate chemical reactions andunderstand ever more complex transformations. Tensor contractions are the fundamental computational building block of these simulations. These simulations have often been tied to one platform and restricted in generality by the interface provided to the user. The expanding prevalence of accelerators and researcher demands necessitate a more general approach which is not tied to specific hardware or requires contortion of algorithms to specific hardware platforms. In this paper we present COMET, a domain-specific programming language and compiler infrastructure for tensor contractions targeting heterogeneous accelerators. We present a system of progressive lowering through multiple layers of abstraction and optimization that achieves up to 1.98X speedup for 30 tensor contractions commonly used in computational chemistry and beyond.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

High Permittivity Dielectric Field-Plated Vertical (001) $β$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$

This paper presents vertical (001) oriented $β$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $μm$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (R$_{on-sp}$) of 0.32 m$Ω$-cm$^{2}$. The extreme permittivity field plate oxide facilitated the lateral spread of the electric field profile beyond the field plate edge and enabled a breakdown voltage ($V_{br}$) of 687 V. The edge termination efficiency increases from 13.5 $\%$ for non-field plated structure to 63 $\%$ for high permittivity field plate structure. The surface breakdown electric field was extracted to be 5.45 MV/cm at the center of the anode region using TCAD simulations. The high permittivity field plated SBD demonstrated a record high Baliga figure of merit (BFOM) of 1.47 GW/cm$^{2}$ showing the potential of Ga$_2$O$_3$ power devices for multi-kilovolt class applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum and O$_2$ as precursors without breaking the vacuum at a growth temperature of 600 $^0$C. The fast and slow near interface traps at the Al$_2$O$_3$/ $β$-Ga$_2$O$_3$ interface are identified and quantified using stressed capacitance-voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D$_{it}$) are measured using ultra-violet (UV) assisted CV technique. The average D$_{it}$ for the MOSCAP is determined to be 7.8 $\times$ 10$^{11}$ cm$^{-2}$eV$^{-1}$. The conduction band offset of the Al$_2$O$_3$/ Ga$_2$O$_3$ interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al$_2$O$_3$/ Ga$_2$O$_3$ interface. The current-voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV/cm. This in-situ Al$_2$O$_3$ dielectric on $β$-Ga$_2$O$_3$ with improved dielectric properties can enable Ga$_2$O$_3$-based high performance devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

An Abstraction-guided Approach to Scalable and Rigorous Floating-Point Error Analysis

Automated techniques for rigorous floating-point round-off error analysis are important in areas including formal verification of correctness and precision tuning. Existing tools and techniques, while providing tight bounds, fail to analyze expressions with more than a few hundred operators, thus unable to cover important practical problems. In this work, we present Satire, a new tool that sheds light on how scalability and bound-tightness can be attained through a combination of incremental analysis, abstraction, and judicious use of concrete and symbolic evaluation. Satire has handled problems exceeding 200K operators. We present Satire's underlying error analysis approach, information-theoretic abstraction heuristics, and a wide range of case studies, with evaluation covering FFT, Lorenz system of equations, and various PDE stencil types. Our results demonstrate the tightness of Satire's bounds, its acceptable runtime, and valuable insights provided.

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preprint2020arXiv

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off beyond its already high unipolar figure of merit. The device parameters are optimized using both TCAD simulations and analytical modeling using conformal mapping technique. The dielectric superjunction structure is found to be highly sensitive to the device dimensions and the dielectric constant of the insulator. The aspect ratio, which is the ratio of the length to the width of the drift region, is found to be the most important parameter in designing the structure and the proposed approach only works for aspect ratio much greater than one. The width of the dielectric layer and the dielectric constant also plays a crucial role in improving the device properties and are optimized to achieve maximum figure of merit. Using the optimized structure with an aspect ratio of 10 and a dielectric constant of 300, the structure is predicted to surpass the b-Ga2O3 unipolar figure of merit by four times indicating the promise of such structures for exceptional FOM vertical power electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals

Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously reported 0.86 (E2) and 1.03 eV (E3) levels. For 10^18 cm-3 Zr-doped Ga2O3, signatures at 0.30 eV (E15) and 0.71 eV (E16) are present. For the highest Zr doping of 5*10^18 cm-3, we observe only one signature at 0.59 eV. Electric field-enhanced emission rates are demonstrated via increasing the reverse bias during measurement. The 0.86 eV signature in the UID sample displays phonon-assisted tunneling enhanced thermal emission and is consistent with the widely reported E2 (FeGa) defect. The 0.71 eV (E16) signature in the lower-Zr-doped crystal also exhibits phonon-assisted tunneling emission enhancement. Taking into account that the high doping in the Zr-doped diodes also increases the electric field, we propose that the 0.59 eV signature in the highest Zr-doped sample likely corresponds to the 0.71 eV signature in lower-doped samples. Our analysis highlights the importance of testing for and reporting on field-enhanced emission especially the electric field present during DLTS and other characterization experiments on beta-Ga2O3 along with the standard emission energy, cross-section, and lambda-corrected trap density. This is important because of the intended use of beta-Ga2O3 in high-field devices and the many orders of magnitude of possible doping.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping

N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall Effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze (VGF) and Czochralski method in mixed Ar+O2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in \b{eta}-Ga2O3 with a measured electron concentration 2 x 10^19 cm^-3 , mobility 80-65 cm^2 /Vs, and resistivity down to 5 mOhm-cm in our samples. The concentration of Hf was measured to be 1.3 x 10^19 atoms/cm^3 using glow discharge mass spectroscopy (GDMS) on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 x 10^19 cm-3).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the range of 2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm to 3.5 nm is measured. We also demonstrate a high density (6.4e12 cm-2) degenerate two-dimensional electron gas using a delta-doped \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure.The total charge could also include a contribution from a parallel channel in the \b{eta}-(Al0.26Ga0.74)2O3 alloy barrier.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

FPDetect: Efficient Reasoning About Stencil Programs Using Selective Direct Evaluation

We present FPDetect, a low overhead approach for detecting logical errors and soft errors affecting stencil computations without generating false positives. We develop an offline analysis that tightly estimates the number of floating-point bits preserved across stencil applications. This estimate rigorously bounds the values expected in the data space of the computation. Violations of this bound can be attributed with certainty to errors. FPDetect helps synthesize error detectors customized for user-specified levels of accuracy and coverage. FPDetect also enables overhead reduction techniques based on deploying these detectors coarsely in space and time. Experimental evaluations demonstrate the practicality of our approach.

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preprint2020arXiv

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 kΩ/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3.

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preprint2020arXiv

Highly tunable polarization-engineered two-dimensional electron gas in $ε$-AlGaO3 / $ε$-Ga2O3 heterostructures

We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $ε$-AlGaO3 / $ε$-Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in $ε$-Ga2O3 /$ε$-AlGaO3 / $ε$-Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of $ε$-Ga2O3 and $ε$-AlGaO3 alloys. Using Schrodinger-Poisson solver along with DFT calculated parameters, the 2DEG density is calculated as a function of barrier type and thickness. By optimizing the layer thicknesses of $ε$-Ga2O3/$ε$-AlGaO3/$ε$-Ga2O3 heterostructures, charge contrast ratios exceeding 1600 are obtained. This computational study indicates the high potential for $ε$-Ga2O3-based heterostructure devices for non-volatile memories and neuromorphic applications.

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preprint2020arXiv

Schottky Barrier Height Engineering In $β$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric

This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS) Schottky barrier diodes were fabricated on bulk n-type doped $β$-Ga$_2$O$_3$ single crystal substrates along the (010), (-201) and (100) orientations and were characterized by room temperature current-voltage (I-V) and capacitance-voltage (C-V) measurements. Pt MIS diodes exhibited 0.53 eV and 0.37 eV increment in SBH along the (010) and (-201) orientations respectively as compared to their respective MS counterparts. The highest SBH of 1.81 eV was achieved on the (010)-oriented MIS SBD using Pt metal. The MIS SBDs on (100)-oriented substrates exhibited a dramatic increment ($>$1.5$\times$) in SBH as well as reduction in reverse leakage current. The use of thin dielectric interlayers can be an efficient experimental method to modulate SBH of metal/Ga$_2$O$_3$ junctions.

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preprint2020arXiv

Theoretical Investigation of Optical Intersubband Transitions and Infrared Photodetection in $β$-(AlxGa1-x)2O3/Ga2O3 Quantum Well Structures

We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system. Conventional material systems have matured into successful intersubband device applications such as large area quantum well infrared photodetector(QWIP) focal plane arrays for reproducible imaging systems but are fundamentally limited via maximum conduction band offsets to mid and long wavelength infrared applications. Short and near infrared devices are technologically important to optical communications systems and biomedical imaging applications, but are difficult to realize in intersubband designs for this reason. In this work, we use a first principles approach to estimate the expansive design space of monoclinic $β$(AlxGa1x)2O3/Ga2O3 material system, which reaches from short wavelength infrared (1 to 3μm) to far infrared (greater than 30μm) transition wavelengths. We estimate the performance metrics of two QWIPs operating in the long and short wavelength regimes, including an estimation of high room temperature detectivity (about 10^11 Jones) at the optical communication wavelength λp 1.55μm. Our findings demonstrate the potential of the rapidly maturing (AlxGa1-x)2O3/Ga2O3 material system to open the door for intersubband device applications.

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preprint2019arXiv

Green's Function Coupled Cluster Simulation of the Near-valence Ionizations of DNA-fragments

Accurate description of the ionization process in DNA is crucial to the understanding of the DNA damage under exposure to ionizing radiation, and the exploration of the potential application of DNA strands in nano-electronics. In this work, by employing our recently developed Green's function coupled-cluster (GFCC) library on supercomputing facilities, we have studied the spectral functions of several guanine$-$cytosine (G$-$C) base pair structures ([G$-$C]$_n$, $n=1-3$) for the first time in a relatively broad near-valence regime ([-25.0,-5.0] eV) in the coupled-cluster with singles and doubles (CCSD) level. Our focus is to give a preliminary many-body coupled-cluster understanding and guideline of the vertical ionization energy (VIE), spectral profile, and ionization feature changes of these systems as the system size expands in this near-valence regime. The results show that, as the system size expands, even though the lowest VIEs keep decreasing, the changes of spectral function profile and the relative peak positions get unexpectedly smaller. Further analysis of the ionized states associated with the most intensive peak in the spectral functions reveals non-negligible $|2h,1p\rangle$'s in the ionized wave functions of the considered G$-$C base pair systems. The leading $|2h,1p\rangle$'s associated with the main ionizations from the cytosine part of the G$-$C base pairs feature a transition from the intra-base-pair cytosine $π\rightarrowπ^\ast$ excitation to the inter-base-pair electron excitation as the size of G$-$C base pairs expands, which also indicates the minimum quantum region in the many-body calculations of DNA systems.

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preprint2019arXiv

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x1018-7.3x1019 cm-3 with a corresponding electron mobility of 53-27 cm2/V.s in uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 layers. Modulation doping is used to realize a total electron sheet charge of 2.3x1012 cm-2 in a \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure using a uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 barrier layer and a thin spacer layer.

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preprint2016arXiv

AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance of 1.9x10-6 ohm.cm2 to n-Al0.75Ga0.25N channels (bandgap ~ 5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

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preprint2016arXiv

Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction higher than 50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced 3D charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. The design of graded tunnel junction structures could lead to low tunneling resistance below 10-3 Ohm cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance, and can enable efficient emitters in the UV-C wavelength range.

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preprint2016arXiv

Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes

We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate the compensation and doping in p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62% were achieved for tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs, and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.

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preprint2016arXiv

High Current Density 2D/3D Esaki Tunnel Diodes

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

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preprint2016arXiv

Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance

We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage of ~1.6-2 V. Thermionic PN junctions with tunnel contact to the p-layer exhibited forward current density of 150 kA/cm^2 at 7.6 V, with a low series device resistance of 1 x 10^-5 ohm.cm^2.

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preprint2016arXiv

PRESAGE: Protecting Structured Address Generation against Soft Errors

Modern computer scaling trends in pursuit of larger component counts and power efficiency have, unfortunately, lead to less reliable hardware and consequently soft errors escaping into application data ("silent data corruptions"). Techniques to enhance system resilience hinge on the availability of efficient error detectors that have high detection rates, low false positive rates, and lower computational overhead. Unfortunately, efficient detectors to detect faults during address generation (to index large arrays) have not been widely researched. We present a novel lightweight compiler-driven technique called PRESAGE for detecting bit-flips affecting structured address computations. A key insight underlying PRESAGE is that any address computation scheme that flows an already incurred error is better than a scheme that corrupts one particular array access but otherwise (falsely) appears to compute perfectly. Enabling the flow of errors allows one to situate detectors at loop exit points, and helps turn silent corruptions into easily detectable error situations. Our experiments using PolyBench benchmark suite indicate that PRESAGE-based error detectors have a high error-detection rate while incurring low overheads.

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preprint2015arXiv

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10^7 cm/s at a low sheet charge density of 7.8 x 10^11 cm-2. A new optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated LO phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

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preprint2015arXiv

Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs

The efficiency of ultra violet LEDs is critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling-based top-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni nano-clusters as etch mask. The top surface roughened LEDs were found to enhance external quantum efficiency by over 40% for UV LEDs with a peak emission wavelength of 326 nm. The method described here can enable highly efficient UV LEDs without the need for complex manufacturing methods such as flip chip bonding.

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preprint2015arXiv

Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters

Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient ultraviolet solid state emitters remains a challenge due to the low p-type conductivity and high contact resistance in wide band gap AlGaN-based ultra-violet light emitters. In this work, we show that efficient interband tunneling can be used for non-equilibrium injection of holes into ultraviolet emitters. Polarization-engineered tunnel junctions were used to enhance tunneling probability by several orders of magnitude over a PN homojunction, leading to highly efficient tunnel injection of holes to ultraviolet light emitters. This demonstration of efficient interband tunneling introduces a new paradigm for design of ultra-violet light emitting diodes and diode lasers, and enables higher efficiency and lower cost ultra-violet emitters.

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preprint2015arXiv

Layer-Transferred MoS2/GaN PN Diodes

Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS2 films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of approximately 0.2 eV for the transferred MoS2/GaN heterojunction. This conduction band offset was confirmed by internal photoemission (IPE) measurements. The energy band lineup of the MoS2/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications.

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preprint2015arXiv

Simulation of Enhancement Mode GaN HEMTs with Threshold > 5 V using P-type Buffer

A high threshold voltage enhancement-mode GaN HEMT with p-type doped buffer is discussed and simulated. Analytical expressions are derived to explain the role of buffer capacitance in designing and enhancing threshold voltage. Simulations of the proposed device with p-type buffer show threshold voltages above 5 V, and a positive shift in threshold voltage as the oxide capacitance is reduced, thus enabling threshold voltage tunability over an unprecedented range for GaN-based HEMTs. The electric field profiles, breakdown performance, on-resistance and delay tradeoffs in the proposed pGaN back HEMT device are also discussed.

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preprint2014arXiv

InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes

InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measured in a MBE grown tunnel junction on GaN PN junction device, indicating that the tunnel junction LED device resistance is limited by the regrowth interface and not by the intrinsic tunneling resistance.

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preprint2013arXiv

GdN Nanoisland-Based GaN Tunnel Junctions

We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 Ω-cm2) for various optoelectronic applications. We exploit the ability to overgrow high quality GaN over GdN nanoislands to create new nanoscale heterostructure designs that are not feasible in planar epitaxy. GdN nanoisland assisted inter-band tunneling was found to enhance tunneling in both of the polar orientations of GaN. Tunnel injection of holes was confirmed by low temperature operation of GaN p-n junction with a tunneling contact layer, showing strong electroluminescence down to 20K. The availability of tunnel junctions with negligible absorption could not only improve the efficiency of existing optoelectronic devices significantly, but also enable new electronic and optical devices based on wide band gap materials.

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preprint2013arXiv

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS2) thin films with the highest mobility reported in CVD grown films so far. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) orientated sapphire yielded highly oriented single crystal MoS2 films for the first time. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures.

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preprint2013arXiv

Low Resistance GaN/InGaN/GaN Tunnel Junctions

Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 Ω cm2. The design methodology and low-temperature characteristic of these tunnel junctions is discussed, and insertion into a PN junction device is described. Applications of tunnel junctions in III-nitride optoelectronics devices are explained using energy band diagrams. The lower band gap and polarization fields reduce tunneling barrier, eliminating the need for ohmic contacts to p-type GaN. This demonstration of efficient tunnel injection of carriers in III-Nitrides can lead to a replacement of existing resistive p-type contact material in light emitters with tunneling contact layers, requiring very little metal footprint on the surface, resulting in enhanced light extraction from top emitting emitters.

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preprint2011arXiv

Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering

We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio (PVCR) of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

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preprint2011arXiv

Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60x1012 cm-2 at the Al2O3/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.

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preprint2010arXiv

Polarization-engineered GaN/InGaN/GaN tunnel diodes

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

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