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Researcher profile

Yositake Takane

Yositake Takane contributes to research discovery and scholarly infrastructure.

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Published work

14 published item(s)

preprint2022arXiv

Phase Diagram of a Non-Hermitian Chern Insulator: Destabilization of Chiral Edge States and Bulk-Boundary Correspondence

A non-Hermitian Chern insulator with gain/loss-type non-Hermiticity shows a peculiar gap closing; when a nontrivial Chern insulator phase changes to a gapless phase, conduction and valence bands are combined into one band owing to destabilization of chiral edge states. A previous recipe of non-Hermitian bulk-boundary correspondence is insufficient for this system since such a gap closing is beyond its scope. Here, we revise the recipe by taking the peculiar gap closing into account and apply it to the non-Hermitian Chern insulator. We demonstrate that the bulk-boundary correspondence holds in the system including a destabilization of chiral edge states. A phase diagram derived from the bulk-boundary correspondence is shown to be consistent with spectra of the system.

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preprint2021arXiv

Bulk-Boundary Correspondence in a Non-Hermitian Chern Insulator

A scenario of non-Hermitian bulk--boundary correspondence proposed for one-dimensional topological insulators is adapted to a non-Hermitian Chern insulator to examine its applicability to two-dimensional systems. This scenario employs bulk geometry under a modified periodic boundary condition and boundary geometry under an open boundary condition. The bulk geometry is used to define a topological number, whereas the boundary geometry is used to observe the presence or absence of a topological boundary state. It is demonstrated that the bulk--boundary correspondence holds in a two-dimensional Chern insulator with gain/loss-type non-Hermiticity; a nontrivial Chern number calculated in the bulk geometry is in one-to-one correspondence with the presence of a topological boundary state in the boundary geometry. This approach enables us to determine a phase diagram in the boundary geometry.

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preprint2020arXiv

Unified Formula for Stationary Josephson Current in Planar Graphene Junctions

The stationary Josephson current in a ballistic graphene system is theoretically studied with focus on a planar junction consisting of a monolayer graphene sheet on top of which a pair of superconducting electrodes is deposited. To characterize such a planar junction, we employ two parameters: the coupling strength between the graphene sheet and the superconducting electrodes, and a potential drop induced in the graphene sheet by direct contact with the electrodes. We derive a general formula for the Josephson current by taking these parameters into account in addition to other basic parameters, such as temperature and chemical potential. The resulting formula applies to a wide range of parameters and reproduces previously reported results in certain limits.

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preprint2020arXiv

Zero-Energy State Localized near an Arbitrary Edge in Quadrupole Topological Insulators

A two-dimensional quadrupole topological insulator on a square lattice is a typical example of a higher-order topological insulator. It hosts an edge state localized near each of its $90^{\circ}$ corners at an energy $E$ inside the band gap, where $E$ is set equal to zero for simplicity. Although the appearance of an edge state has been shown in simple systems with only $90^{\circ}$ corners, it is uncertain whether a similar localized state can appear at $E = 0$ near a complicated edge consisting of multiple $90^{\circ}$ and $270^{\circ}$ corners. Here, we present a numerical method to determine the wavefunction of a zero-energy state localized near an arbitrary edge. This method enables us to show that one localized state appears at $E = 0$ if the edge consists of an odd number of corners. In contrast, the energy of localized states inevitably deviates from $E = 0$ if the edge includes an even number of corners.

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preprint2014arXiv

One-dimensional topological insulator: a model for studying finite-size effects in topological insulator thin films

As a model for describing finite-size effects in topological insulator thin films, we study a one-dimensional (1D) effective model of a topological insulator (TI). Using this effective 1D model, we reveal the precise correspondence between the spatial profile of the surface wave function, and the dependence of the finite-size energy gap on the thickness (Lx) of the film. We solve the boundary problem both in the semi-infinite and slab geometries to show that the Lx-dependence of the size gap is a direct measure of the amplitude of the surface wave function at the depth of x=Lx+1 [here, the boundary condition is chosen such that the wave function vanishes at x=0]. Depending on the parameters, the edge state function shows either a damped oscillation (in the "TI-oscillatory" region of FIG. 2, or becomes overdamped (ibid., in the "TI-overdamped" phase). In the original 3D bulk TI, an asymmetry in the spectrum of valence and conduction bands is omnipresent. Here, we demonstrate by tuning this asymmetry one can drive a crossover from the TI-oscillatory to the TI-overdamped phase.

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preprint2013arXiv

Perfectly conducting channel on the dark surface of weak topological insulators

A weak topological insulator (WTI) bears, generally, an even number of Dirac cones on its surface; they are susceptible of doubling, while on the surface of a certain orientation it shows no Dirac cone. On this "dark" surface of a WTI, we predict the existence of a single pair of isolated 1D perfectly conducting channels that forms either a closed loop or a segment of a line. The former is associated typically with a single atomic-layer-thick island formed on the dark surface, while the latter is shown to be the consequence of a pair of crystal (screw) dislocations terminating on the dark surface.

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preprint2013arXiv

Protection of the surface states in topological insulators: Berry phase perspective

The metallic surface state of a topological insulator (TI) is not only topologically protected, but exhibits a remarkable property of inducing an effective vector potential on curved surfaces. For an electron in the surface state of a spherical or a cylindrical TI (TI nanoparticle or nanowire) a pseudo-magnetic monopole or a fictitious solenoid is effectively induced, encoding the geometry of the system. Here, by taking an example of a hyperbolic surface we demonstrate that as a consequence of this property stemming from its active spin degree of freedom, the surface state is by itself topologically protected.

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preprint2013arXiv

Unified description of Dirac electrons on a curved surface of topological insulators

Existence of a protected surface state described by a massless Dirac equation is a defining property of the topological insulator. Though this statement can be explicitly verified on an idealized flat surface, it remains to be addressed to what extent it could be general. On a curved surface, the surface Dirac equation is modified by the spin connection terms. Here, in the light of the differential geometry, we give a general framework for constructing the surface Dirac equation starting from the Hamiltonian for bulk topological insulators. The obtained unified description clarifies the physical meaning of the spin connection.

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preprint2012arXiv

Dirac Electrons on a Sharply Edged Surface of Topological Insulators

An unpaired gapless Dirac electron emergent at the surface of a strong topological insulator (STI) is protected by the bulk-surface correspondence and believed to be immune to backward scattering. It is less obvious, however, and yet to be verified explicitly whether such a gapless Dirac state is smoothly extended over the entire surface when the surface is composed of more than a single facet with different orientations in contact with one another at sharp corner edges (typically forming a steplike structure). In the realistic situation that we consider, the anisotropy of the sample leads to different group velocities in each of such facets. Here, we propose that much insight on this issue can be obtained by studying the electronic states on a hyperbolic surface of an STI. By explicitly constructing the surface effective Hamiltonian, we demonstrate that no backward scattering takes place at a concave $90^\circ$ step edge. A strong renormalization of the velocity in the close vicinity of the step edge is also suggested.

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preprint2012arXiv

Finite-size energy gap in weak and strong topological insulators

The non-trivialness of a topological insulator (TI) is characterized either by a bulk topological invariant or by the existence of a protected metallic surface state. Yet, in realistic samples of finite size this non-trivialness does not necessarily guarantee the gaplessness of the surface state. Depending on the geometry and on the topological indices, a finite-size energy gap of different nature can appear, and correspondingly, exhibits various scaling behaviors of the gap. The spin-to-surface locking provides one of such gap-opening mechanisms, resulting in a power-law scaling of the energy gap. Weak and strong TI's show different degrees of sensitivity to the geometry of the sample. As a noteworthy example, a strong TI nanowire of a rectangular prism shape is shown to be more gapped than that of a weak TI of precisely the same geometry.

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preprint2012arXiv

Perfectly conducting channel and its robustness in disordered carbon nanostructures

We report our recent numerical study on the effects of dephasing on a perfectly conducting channel (PCC), its presence believed to be dominant in the transport characteristics of a zigzag graphene nanoribbons (GNR) and of a metallic carbon nanotubes (CNT). Our data confirms an earlier prediction that a PCC in GNR exhibits a peculiar robustness against dephasing, in contrast to that of the CNT. By studying the behavior of the conductance as a function of the system's length we show that dephasing destroys the PCC in CNT, whereas it stabilizes the PCC in GNR. Such opposing responses of the PCC against dephasing stem from a different nature of the PCC in these systems.

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preprint2012arXiv

Quasiclassical Theory of the Josephson Effect in Ballistic Graphene Junctions

The stationary Josephson effect in a system of ballistic graphene is studied in the framework of quasiclassical Green's function theory. Reflecting the ultimate two-dimensionality of graphene, a Josephson junction involving a graphene sheet embodies what we call a planar Josephson junction, in which superconducting electrodes partially cover the two-dimensional graphene layer, achieving a planar contact with it. For capturing this feature we employ a model of tunneling Hamiltonian that also takes account of the effects of inhomogeneous carrier density. Within the effective mass approximation we derive a general formula for the Josephson current, revealing characteristic features of the superconducting proximity effect in the planar Josephson junction. The same type of analysis has been equally applied to mono-, bi- and arbitrary $N$-layer cases.

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preprint2012arXiv

Spherical topological insulator

The electronic spectrum on the spherical surface of a topological insulator reflects an active property of the helical surface state that stems from a constraint on its spin on a curved surface. The induced effective vector potential (spin connection) can be interpreted as an effective vector potential associated with a fictitious magnetic monopole induced at the center of the sphere. The strength of the induced magnetic monopole is found to be g=2pi, -2pi, being the smallest finite (absolute) value compatible with the Dirac quantization condition. We have established an explicit correspondence between the bulk Hamiltonian and the effective Dirac operator on the curved spherical surface. An explicit construction of the surface spinor wave functions implies a rich spin texture possibly realized on the surface of topological insulator nanoparticles. The electronic spectrum inferred by the obtained effective surface Dirac theory, confirmed also by the bulk tight-binding calculation, suggests a specific photo absorption/emission spectrum of such nanoparticles.

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preprint2011arXiv

Spin Berry phase in anisotropic topological insulators

Three-dimensional topological insulators are characterized by the presence of protected gapless spin helical surface states. In realistic samples these surface states are extended from one surface to another, covering the entire sample. Generally, on a curved surface of a topological insulator an electron in a surface state acquires a spin Berry phase as an expression of the constraint that the effective surface spin must follow the tangential surface of real space geometry. Such a Berry phase adds up to pi when the electron encircles, e.g., once around a cylinder. Realistic topological insulators compounds are also often layered, i.e., are anisotropic. We demonstrate explicitly the existence of such a pi Berry phase in the presence and absence (due to crystal anisotropy) of cylindrical symmetry, that is, regardless of fulfilling the spin-to-surface locking condition. The robustness of the spin Berry phase pi against cylindrical symmetry breaking is confirmed numerically using a tight-binding model implementation of a topological insulator nanowire penetrated by a pi-flux tube.

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