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Ken-Ichiro Imura

Ken-Ichiro Imura appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.dis-nncond-mat.supr-concond-mat.str-elhep-thquant-ph

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Published work

32 published item(s)

preprint2022arXiv

Unusual wave-packet spreading and entanglement dynamics in non-Hermitian disordered many-body systems

Non-Hermiticity and dephasing, collaborating in an unusual wave packet dynamics, realizes unconventional entanglement evolution in a disordered, interacting and asymmetric (non-reciprocal) quantum medium. Taking the Hatano-Nelson model as a concrete example, we first consider how wave packet spreads in a non-Hermitian disordered system for demonstraing that it is very different from the Hermitian case. Interestingly, a cascade like wave packet spreading as in the Hermitian case is suppressed in the clean limit and at weak disorder, while it revives in the vicinity of the localization-delocalization transition. Based on this observation, we then analyze how the entanglement entropy of the system evolves in the interacting non-Hermitian model, revealing its non-monotonic evolution in time. We clarify the different roles of dephasing in the time evolution of entanglement entropy in Hermitian and non-Hermitian systems, and show that the many-body dynamics is governed by a principle different from the Hermitian case. The size dependence of the results suggests with the increase of disorder, a unusual area-volume-area law crossover of the maximal entanglement entropy. To analyze the effects of disorder on a firm basis, using the Hermitian limit as a benchmark, we employ a quasi-periodic disorder (Aubry-André model) in the analyses.

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preprint2020arXiv

Finite-size effects in cylindrical topological insulators

We present a theoretical study of a nanowire made of a three-dimensional topological insulator. The bulk topological insulator is described by a continuum-model Hamiltonian, and the cylindrical-nanowire geometry is modelled by a hard-wall boundary condition. We provide the secular equation for the eigenergies of the systems (both for bulk and surface states) and the analytical form of the energy eigenfunctions. We describe how the surface states of the cylinder are modified by finite-size effects. In particular, we provide a $1/R$ expansion for the energy of the surface states up to second order. The knowledge of the analytical form for the wavefunctions enables the computation of matrix elements of any single-particle operators. In particular, we compute the matrix elements of the optical dipole operator, which describe optical absorption and emission, treating intra- and inter-band transition on the same footing. Selection rules for optical transitions require conservation of linear momentum parallel to the nanowire axis, and a change of $0$ or $\pm 1$ in the total-angular-momentum projection parallel to the nanowire axis. The magnitude of the optical-transition matrix elements is strongly affected by the finite radius of the nanowire.

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preprint2016arXiv

Comparative study of Weyl semimetal, topological and Chern insulators: thin-film point of view

Regarding three-dimensional (3D) topological insulators and semimetals as a stack of constituent 2D topological (or sometimes non-topological) layers is a useful viewpoint. Primarily, concrete theoretical models of the paradigmatic 3D topological phases such as Weyl semimetal (WSM), strong and weak topological insulators (STI/WTI), and Chern insulator (CI), are often constructed in that way. Secondarily, fabrication of the corresponding 3D topological material is also done in the same spirit; epitaxial growth technique is employed, making the resulting sample in the form of a thin film. Here, in this paper we calculate $\mathbb{Z}$- and $\mathbb{Z}_2$-indices and study evolution of the topological properties of such thin films of 3D topological systems, making also a comparative study of CI- vs. TI-type models belonging to different symmetry classes in this respect. Through this comparative study we suggest that WSM is to CI as STI is to WTI. Finally, to test the robustness of our scenario against disorder and relevance to experiments we have also studied numerically the two-terminal conductance of the system using transfer matrix method.

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preprint2015arXiv

Dimensional crossover of transport characteristics in topological insulator nanofilms

We show how the two-dimensional (2D) topological insulator evolves, by stacking, into a strong or weak topological insulator with different topological indices, proposing a new conjecture that goes beyond an intuitive picture of the crossover from quantum spin Hall to the weak topological insulator. Studying the conductance under different boundary conditions, we demonstrate the existence of two conduction regimes in which conduction happens through either surface- or edge-conduction channels. We show that the two conduction regimes are complementary and exclusive. Conductance maps in the presence and absence of disorder are introduced, together with 2D $\mathbb{Z}_2$-index maps, describing the dimensional crossover of the conductance from the 2D to the 3D limit. Stacking layers is an effective way to invert the gap, an alternative to controlling the strength of spin-orbit coupling. The emerging quantum spin Hall insulator phase is not restricted to the case of odd numbers of layers.

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preprint2015arXiv

Manipulating quantum channels in weak topological insulator nanoarchitectures

In $strong$ topological insulators protected surface states are always manifest, while in $weak$ topological insulators (WTI) the corresponding metallic surface states are either manifest or hidden, depending on the orientation of the surface. One can design a nanostep on the surface of WTI such that a protected helical channel appears along it. In a more generic WTI nanostructure, multiple sets of such quasi-1D channels emerge and are coupled to each other. We study the response of the electronic spectrum associated with such quasi-1D surface modes against a magnetic flux piercing the system in the presence of disorder, and find a non-trivial, connected spectral flow as a clear signature indicating the immunity of the surface modes to disorder. We propose that the WTI nanoarchitecture is a promising platform for realizing topologically protected nanocircuits immune to disorder.

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preprint2014arXiv

Characterizing the weak topological properties: Berry phase point of view

We propose classification schemes for characterizing two-dimensional topological phases with nontrivial weak indices. Here, "weak" implies that the Chern number in the corresponding phase is trivial, while the system shows edge states along specific boundaries. As concrete examples, we analyze different versions of the so-called Wilson-Dirac model with (i) anisotropic Wilson terms, (ii) next nearest neighbor hopping terms, and (iii) a superlattice generalization of the model, here in the tight-binding implementation. For types (i) and (ii) a graphic classification of strong properties is successfully generalized for classifying weak properties. As for type (iii), weak properties are attributed to quantized Berry phase pi along a Wilson loop.

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preprint2014arXiv

Engineering Dirac electrons emergent on the surface of a topological insulator

The concept of topological insulator (TI) has introduced a new point of view to condensed-matter physics, relating a priori unrelated subfields such as quantum (spin, anomalous) Hall effects, spin-orbit coupled materials, some classes of nodal superconductors and superfluid $^3$He, etc. From a technological point of view, topological insulator is expected to serve as a platform for realizing dissipationless transport in a non-superconducting context. The topological insulator exhibits a gapless surface state with a characteristic conic dispersion (a surface Dirac cone). Here, we review peculiar finite-size effects applicable to such surface states in TI nanostructures. We highlight the specific electronic properties of TI nanowires and nanoparticles, and in this context contrast the cases of weak and strong TIs. We study robustness of the surface and the bulk of TIs against disorder, addressing the physics of Dirac and Weyl semimetals as a new perspective of research in the field.

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preprint2014arXiv

One-dimensional topological insulator: a model for studying finite-size effects in topological insulator thin films

As a model for describing finite-size effects in topological insulator thin films, we study a one-dimensional (1D) effective model of a topological insulator (TI). Using this effective 1D model, we reveal the precise correspondence between the spatial profile of the surface wave function, and the dependence of the finite-size energy gap on the thickness (Lx) of the film. We solve the boundary problem both in the semi-infinite and slab geometries to show that the Lx-dependence of the size gap is a direct measure of the amplitude of the surface wave function at the depth of x=Lx+1 [here, the boundary condition is chosen such that the wave function vanishes at x=0]. Depending on the parameters, the edge state function shows either a damped oscillation (in the "TI-oscillatory" region of FIG. 2, or becomes overdamped (ibid., in the "TI-overdamped" phase). In the original 3D bulk TI, an asymmetry in the spectrum of valence and conduction bands is omnipresent. Here, we demonstrate by tuning this asymmetry one can drive a crossover from the TI-oscillatory to the TI-overdamped phase.

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preprint2013arXiv

Criticality of the metal-topological insulator transition driven by disorder

Employing scaling analysis of the localization length, we deduce the critical exponent of the metal-topological insulator (TI) transitions induced by disorder. The obtained exponent nu~2.7 shows no conspicuous deviation from the value established for metal-ordinary insulator transitions in systems of the symplectic class. We investigate the topological phase diagram upon carrier doping to reveal the nature of the so-called topological Anderson insulator (TAI) region. The critical exponent of the metal-TAI transition is also first estimated, shown to be undistinguishable from the above value within the numerical error. By symmetry considerations we determine the explicit form of Rashba spin-orbit coupling in systems of C4v point group symmetry.

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preprint2013arXiv

Density of States Scaling at the Semimetal to Metal Transition in Three Dimensional Topological Insulators

The quantum phase transition between the three dimensional Dirac semimetal and the diffusive metal can be induced by increasing disorder. Taking the system of disordered $\mathbb{Z}_2$ topological insulator as an important example, we compute the single particle density of states by the kernel polynomial method. We focus on three regions: the Dirac semimetal at the phase boundary between two topologically distinct phases, the tricritical point of the two topological insulator phases and the diffusive metal, and the diffusive metal lying at strong disorder. The density of states obeys a novel single parameter scaling, collapsing onto two branches of a universal scaling function, which correspond to the Dirac semimetal and the diffusive metal. The diverging length scale critical exponent $ν$ and the dynamical critical exponent $z$ are estimated, and found to differ significantly from those for the conventional Anderson transition. Critical behavior of experimentally observable quantities near and at the tricritical point is also discussed.

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preprint2013arXiv

Disordered weak and strong topological insulators

A global phase diagram of disordered weak and strong topological insulators is established numerically. As expected, the location of the phase boundaries is renormalized by disorder, a feature recognized in the study of the so-called topological Anderson insulator. Here, we report unexpected quantization, i.e., robustness against disorder of the conductance peaks on these phase boundaries. Another highlight of the work is on the emergence of two subregions in the weak topological insulator phase under disorder. According to the size dependence of the conductance, the surface states are either robust or "defeated" in the two subregions. The nature of the two distinct types of behavior is further revealed by studying the Lyapunov exponents.

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preprint2013arXiv

Perfectly conducting channel on the dark surface of weak topological insulators

A weak topological insulator (WTI) bears, generally, an even number of Dirac cones on its surface; they are susceptible of doubling, while on the surface of a certain orientation it shows no Dirac cone. On this "dark" surface of a WTI, we predict the existence of a single pair of isolated 1D perfectly conducting channels that forms either a closed loop or a segment of a line. The former is associated typically with a single atomic-layer-thick island formed on the dark surface, while the latter is shown to be the consequence of a pair of crystal (screw) dislocations terminating on the dark surface.

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preprint2013arXiv

Protection of the surface states in topological insulators: Berry phase perspective

The metallic surface state of a topological insulator (TI) is not only topologically protected, but exhibits a remarkable property of inducing an effective vector potential on curved surfaces. For an electron in the surface state of a spherical or a cylindrical TI (TI nanoparticle or nanowire) a pseudo-magnetic monopole or a fictitious solenoid is effectively induced, encoding the geometry of the system. Here, by taking an example of a hyperbolic surface we demonstrate that as a consequence of this property stemming from its active spin degree of freedom, the surface state is by itself topologically protected.

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preprint2013arXiv

Unified description of Dirac electrons on a curved surface of topological insulators

Existence of a protected surface state described by a massless Dirac equation is a defining property of the topological insulator. Though this statement can be explicitly verified on an idealized flat surface, it remains to be addressed to what extent it could be general. On a curved surface, the surface Dirac equation is modified by the spin connection terms. Here, in the light of the differential geometry, we give a general framework for constructing the surface Dirac equation starting from the Hamiltonian for bulk topological insulators. The obtained unified description clarifies the physical meaning of the spin connection.

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preprint2012arXiv

Dirac Electrons on a Sharply Edged Surface of Topological Insulators

An unpaired gapless Dirac electron emergent at the surface of a strong topological insulator (STI) is protected by the bulk-surface correspondence and believed to be immune to backward scattering. It is less obvious, however, and yet to be verified explicitly whether such a gapless Dirac state is smoothly extended over the entire surface when the surface is composed of more than a single facet with different orientations in contact with one another at sharp corner edges (typically forming a steplike structure). In the realistic situation that we consider, the anisotropy of the sample leads to different group velocities in each of such facets. Here, we propose that much insight on this issue can be obtained by studying the electronic states on a hyperbolic surface of an STI. By explicitly constructing the surface effective Hamiltonian, we demonstrate that no backward scattering takes place at a concave $90^\circ$ step edge. A strong renormalization of the velocity in the close vicinity of the step edge is also suggested.

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preprint2012arXiv

Finite-size energy gap in weak and strong topological insulators

The non-trivialness of a topological insulator (TI) is characterized either by a bulk topological invariant or by the existence of a protected metallic surface state. Yet, in realistic samples of finite size this non-trivialness does not necessarily guarantee the gaplessness of the surface state. Depending on the geometry and on the topological indices, a finite-size energy gap of different nature can appear, and correspondingly, exhibits various scaling behaviors of the gap. The spin-to-surface locking provides one of such gap-opening mechanisms, resulting in a power-law scaling of the energy gap. Weak and strong TI's show different degrees of sensitivity to the geometry of the sample. As a noteworthy example, a strong TI nanowire of a rectangular prism shape is shown to be more gapped than that of a weak TI of precisely the same geometry.

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preprint2012arXiv

Perfectly conducting channel and its robustness in disordered carbon nanostructures

We report our recent numerical study on the effects of dephasing on a perfectly conducting channel (PCC), its presence believed to be dominant in the transport characteristics of a zigzag graphene nanoribbons (GNR) and of a metallic carbon nanotubes (CNT). Our data confirms an earlier prediction that a PCC in GNR exhibits a peculiar robustness against dephasing, in contrast to that of the CNT. By studying the behavior of the conductance as a function of the system's length we show that dephasing destroys the PCC in CNT, whereas it stabilizes the PCC in GNR. Such opposing responses of the PCC against dephasing stem from a different nature of the PCC in these systems.

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preprint2012arXiv

Quasiclassical Theory of the Josephson Effect in Ballistic Graphene Junctions

The stationary Josephson effect in a system of ballistic graphene is studied in the framework of quasiclassical Green's function theory. Reflecting the ultimate two-dimensionality of graphene, a Josephson junction involving a graphene sheet embodies what we call a planar Josephson junction, in which superconducting electrodes partially cover the two-dimensional graphene layer, achieving a planar contact with it. For capturing this feature we employ a model of tunneling Hamiltonian that also takes account of the effects of inhomogeneous carrier density. Within the effective mass approximation we derive a general formula for the Josephson current, revealing characteristic features of the superconducting proximity effect in the planar Josephson junction. The same type of analysis has been equally applied to mono-, bi- and arbitrary $N$-layer cases.

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preprint2012arXiv

Spherical topological insulator

The electronic spectrum on the spherical surface of a topological insulator reflects an active property of the helical surface state that stems from a constraint on its spin on a curved surface. The induced effective vector potential (spin connection) can be interpreted as an effective vector potential associated with a fictitious magnetic monopole induced at the center of the sphere. The strength of the induced magnetic monopole is found to be g=2pi, -2pi, being the smallest finite (absolute) value compatible with the Dirac quantization condition. We have established an explicit correspondence between the bulk Hamiltonian and the effective Dirac operator on the curved spherical surface. An explicit construction of the surface spinor wave functions implies a rich spin texture possibly realized on the surface of topological insulator nanoparticles. The electronic spectrum inferred by the obtained effective surface Dirac theory, confirmed also by the bulk tight-binding calculation, suggests a specific photo absorption/emission spectrum of such nanoparticles.

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preprint2011arXiv

Disorder-Induced Multiple Transition involving Z2 Topological Insulator

Effects of disorder on two-dimensional Z2 topological insulator are studied numerically by the transfer matrix method. Based on the scaling analysis, the phase diagram is derived for a model of HgTe quantum well as a function of disorder strength and magnitude of the energy gap. In the presence of sz non-conserving spin-orbit coupling, a finite metallic region is found that partitions the two topologically distinct insulating phases. As disorder increases, a narrow-gap topologically trivial insulator undergoes a series of transitions; first to metal, second to topological insulator, third to metal, and finally back to trivial insulator. We show that this multiple transition is a consequence of two disorder effects; renormalization of the band gap, and Anderson localization. The metallic region found in the scaling analysis corresponds roughly to the region of finite density of states at the Fermi level evaluated in the self-consistent Born approximation.

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preprint2011arXiv

Josephson Current through a Planar Junction of Graphene

Josephson effect in a planar graphene junction is studied by assuming that the coupling of a graphene sheet and two superconductors deposited on its top is described by a tunneling Hamiltonian. This model properly takes account of the proximity effect characteristic to a planar junction, and allows us to treat monolayer and bilayer cases in a parallel manner. Applying a quasiclassical Green's function approach to it we analyze the Josephson critical current $I_{\rm c}$ in a short-junction limit. As a characteristic feature of the planar junction we find that $I_{\rm c}$ is a concave function of temperature at the strong coupling limit while it crosses over to a convex function with decreasing the coupling strength. We also find different chemical-potential dependences of $I_{\rm c}$ in the monolayer and bilayer cases.

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preprint2011arXiv

Majorana bound state of a Bogoliubov-de Gennes-Dirac Hamiltonian in arbitrary dimensions

We study a Majorana zero-energy state bound to a hedgehog-like point defect in a topological superconductor described by a Bogoliubov-de Gennes (BdG)-Dirac type effective Hamiltonian. We first give an explicit wave function of a Majorana state by solving the BdG equation directly, from which an analytical index can be obtained. Next, by calculating the corresponding topological index, we show a precise equivalence between both indices to confirm the index theorem. Finally, we apply this observation to reexamine the role of another topological invariant, i.e., the Chern number associated with the Berry curvature proposed in the study of protected zero modes along the lines of topological classification of insulators and superconductors. We show that the Chern number is equivalent to the topological index, implying that it indeed reflects the number of zero-energy states. Our theoretical model belongs to the BDI class from the viewpoint of symmetry, whereas the spatial dimension of the system is left arbitrary throughout the paper.

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preprint2011arXiv

Spin Berry phase in anisotropic topological insulators

Three-dimensional topological insulators are characterized by the presence of protected gapless spin helical surface states. In realistic samples these surface states are extended from one surface to another, covering the entire sample. Generally, on a curved surface of a topological insulator an electron in a surface state acquires a spin Berry phase as an expression of the constraint that the effective surface spin must follow the tangential surface of real space geometry. Such a Berry phase adds up to pi when the electron encircles, e.g., once around a cylinder. Realistic topological insulators compounds are also often layered, i.e., are anisotropic. We demonstrate explicitly the existence of such a pi Berry phase in the presence and absence (due to crystal anisotropy) of cylindrical symmetry, that is, regardless of fulfilling the spin-to-surface locking condition. The robustness of the spin Berry phase pi against cylindrical symmetry breaking is confirmed numerically using a tight-binding model implementation of a topological insulator nanowire penetrated by a pi-flux tube.

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preprint2011arXiv

Spin Berry phase in the Fermi arc states

Unusual electronic property of a Weyl semi-metallic nanowire is revealed. Its band dispersion exhibits multiple subbands of partially flat dispersion, originating from the Fermi arc states. Remarkably, the lowest energy flat subbands bear a finite size energy gap, implying that electrons in the Fermi arc surface states are susceptible of the spin Berry phase. This is shown to be a consequence of spin-to-surface locking in the surface electronic states. We verify this behavior and the existence of spin Berry phase in the low-energy effective theory of Fermi arc surface states on a cylindrical nanowire by deriving the latter from a bulk Weyl Hamiltonian. We point out that in any surface state exhibiting a spin Berry phase pi, a zero-energy bound state is formed along a magnetic flux tube of strength, hc/(2e). This effect is highlighted in a surfaceless bulk system pierced by a dislocation line, which shows a 1D chiral mode along the dislocation line.

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preprint2011arXiv

Weak topological insulator with protected gapless helical states

A workable model for describing dislocation lines introduced into a three-dimensional topological insulator is proposed. We show how fragile surface Dirac cones of a weak topological insulator evolve into protected gapless helical modes confined to the vicinity of dislocation line. It is demonstrated that surface Dirac cones of a topological insulator (either strong or weak) acquire a finite-size energy gap, when the surface is deformed into a cylinder penetrating the otherwise surface-less system. We show that when a dislocation with a non-trivial Burgers vector is introduced, the finite-size energy gap play the role of stabilizing the one-dimensional gapless states.

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preprint2010arXiv

(De)confinement of supercurrent in Z_2 Topological Insulators

It is shown that the electric supercurrent flows in a Z_2 topological insulator with U_em(1) X U_z(1) (electromagnetic and spin) gauge symmetries. When U_z(1) is broken, a dissipationless electric current is still possible to flow locally but net charge transfer is absent, i.e., current is confined. In the Kane-Mele model for graphene, this confining-deconfining (superconducting) transition is driven by the Rashba spin-orbit interaction, which breaks U_z(1).

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preprint2010arXiv

Analytic Theory of Edge Modes in Topological Insulators

Spectrum and wave function of gapless edge modes are derived analytically for a tight-binding model of topological insulators on square lattice. Particular attention is paid to dependence on edge geometries such as the straight (1,0) and zigzag (1,1) edges in the thermodynamic limit. The key technique is to identify operators that combine to annihilate the edge state in the effective one-dimensional (1D) model with momentum along the edge. In the (1,0) edge, the edge mode is present either around the center of 1D Brillouin zone or its boundary, depending on location of the bulk excitation gap. In the (1,1) edge, the edge mode is always present both at the center and near the boundary. Depending on system parameters, however, the mode is absent in the middle of the Brillouin zone. In this case the binding energy of the edge mode near the boundary is extremely small; about $10^{-3}$ of the overall energy scale. Origin of this minute energy scale is discussed.

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preprint2010arXiv

Mesoscopic spin Hall effect along a potential step in graphene

We consider a straight one-dimensional potential step created across a graphene flake. Charge and spin transport through such a potential step are studied in the presence of both intrinsic and extrinsic (Rashba) spin-orbit coupling (SOC). At normal incidence electrons are completely reflected when the Rashba interaction (with strength $λ_R$) is dominant whereas they are perfectly transmitted if the two types of SOC are exactly balanced. At normal incidence, the transmission probability of the step is thus controlled continuously from 0 to 1 by tuning the ratio of the two types of SOC. Besides the transport of charge in the direction normal to the barrier, we show the existence of a spin transport along the barrier. The magnitude of the spin Hall current is determined by a subtle interplay between the height of the potential step and the position of Fermi energy. It is demonstrated that contributions from inter-band matrix elements and evanescent modes are dominant in spin transport. Moreover, in the case of vanishing extrinsic SOC ($λ_R =0$), each channel carries a conserved spin current, in contrast to the general case of a finite $λ_R$, in which only integrated spin current is a conserved quantity. Finally, we provide a quasi-classical picture of the charge and spin transport by imaging flow lines over the entire sample and Veselago lensing (negative refraction) in the case of a $p-n$ junction.

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preprint2010arXiv

Zigzag edge modes in Z2 topological insulator: reentrance and completely flat spectrum

The spectrum and wave function of helical edge modes in Z_2 topological insulator are derived on a square lattice using Bernevig-Hughes-Zhang (BHZ) model. The BHZ model is characterized by a "mass" term M (k) that is parameterized as M (k) = Delta - B k^2. A topological insulator realizes when the parameters Delta and B fall on the regime, either 0 < Delta /B < 4 or 4 < Delta /B < 8. At Delta /B = 4, which separates the cases of positive and negative (quantized) spin Hall conductivities, the edge modes show a corresponding change that depends on the edge geometry. In the (1,0)-edge, the spectrum of edge mode remains the same against change of Delta /B, although the main location of the mode moves from the zone center for Delta /B < 4, to the zone boundary for Delta /B > 4 of the 1D Brillouin zone. In the (1,1)-edge geometry, the group velocity at the zone center changes sign at Delta /B = 4 where the spectrum becomes independent of the momentum, i.e. flat, over the whole 1D Brillouin zone. Furthermore, for Delta/B < 1.354..., the edge mode starting from the zone center vanishes in an intermediate region of the 1D Brillouin zone, but reenters near the zone boundary, where the energy of the edge mode is marginally below the lowest bulk excitations. On the other hand, the behavior of reentrant mode in real space is indistinguishable from an ordinary edge mode.

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preprint2009arXiv

Anti-localization of graphene under substrate electric field

A simple criterion is provided how the (anti-)localization properties of graphene are determined in the presence of inter-valley scattering, Kane-Mele topological mass term, and Rashba spin-orbit interaction (SOI). A set of (pseudo) time-reversal operations show that the number of effective internal degrees of freedom, such as spin and pseudo-spins distinguishing the sublattice and the valley, is the crucial parameter for localization. It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.

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preprint2008arXiv

Colossal spin fluctuations in a molecular quantum dot magnet with ferromagnetic electrodes

We study electronic transport through a magnetic molecule with an intrinsic spin $S$ coupled to two magnetic electrodes, in the incoherent regime. The molecule is modeled as a single resonant level with large Coulomb repulsion (no double occupancy). The molecular spin is isotropic and it interacts with the electronic spin through an exchange interaction. Using an alternative method to the usual master equation approach, we are able to obtain analytical formulas for various physical quantities of interest, such as the mean current and the current fluctuations, but also the mean value of $J_z$ -the $z$ component of the total spin on the molecule- and its fluctuations. This allows us to understand how the electronic current between the magnetized electrodes can control the polarization of the molecular spin. We observe in particular that the fluctuations of $J_z$ reach unexpectedly high values.

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preprint2005arXiv

Noncommutative geometry and nonabelian Berry phase in the wave-packet dynamics of Bloch electrons

Motivated by a recent proposal on the possibility of observing a monopole in the band structure, and by an increasing interest on the role of Berry phase in spintronics, we studied the adiabatic motion of a wave packet of Bloch functions, under a perturbation varying slowly and incommensurately to the lattice structure. We show using only the fundamental principles of quantum mechanics that its effective wave-packet dynamics is conveniently described by a set of equations of motion (EOM) for a semiclassical particle coupled to a nonabelian gauge field associated with a geometric Berry phase. Our EOM can be viewed as a generalization of the standard Ehrenfest's theorem, and their derivation was asymptotically exact in the framework of linear response theory. Our analysis is entirely based on the concept of local Bloch bands, a good starting point for describing the adiabatic motion of a wave packet. One of the advantages of our approach is that the various types of gauge fields were classified into two categories by their different physical origin: (i) projection onto specific bands, (ii) time-dependent local Bloch basis. Using those gauge fields, we write our EOM in a covariant form, whereas the gauge-invariant field strength stems from the noncommutativity of covariant derivatives along different axes of the reciprocal parameter space. The degeneracy of Bloch bands makes the gauge fields nonabelian. We applied our formalism to the analyses on various types of Hall and polarization currents. We highlighted their behavior under time reversal (T) and space inversion (I). The concept of parity polarization current was also introduced. Together with charge/spin Hall/polarization currents, this type of orbital current is expected to be a potential probe for detecting and controling Berry phase.

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