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Yongjin Cho

Yongjin Cho contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2026arXiv

RLDX-1 Technical Report

While Vision-Language-Action models (VLAs) have shown remarkable progress toward human-like generalist robotic policies through the versatile intelligence (i.e. broad scene understanding and language-conditioned generalization) inherited from pre-trained Vision-Language Models, they still struggle with complex real-world tasks requiring broader functional capabilities (e.g. motion awareness, long-term memory, and physical sensing). To address this, we introduce RLDX-1, a general-purpose robotic policy for dexterous manipulation built on the Multi-Stream Action Transformer (MSAT), an architecture that unifies these capabilities by integrating heterogeneous modalities through modality-specific streams with cross-modal joint self-attention. RLDX-1 further combines this architecture with system-level design choices, including data synthesis for rare manipulation scenarios, learning procedures specialized for human-like manipulation, and inference optimizations for real-time deployment. Through empirical evaluation, we show that RLDX-1 consistently outperforms recent frontier VLAs (e.g. $π_{0.5}$ and GR00T N1.6) across both simulation benchmarks and real-world tasks that require broad functional capabilities beyond general versatility. In particular, RLDX-1 shows superiority in ALLEX humanoid tasks by achieving success rates of 86.8% while $π_{0.5}$ and GR00T N1.6 achieve around 40%, highlighting the ability of RLDX-1 to control a high-DoF humanoid robot under diverse functional demands. Together, these results position RLDX-1 as a promising step toward reliable VLAs for complex, contact-rich, and dynamic real-world dexterous manipulation.

preprint2022arXiv

Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning

N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN templates. Direct growth without any in-situ surface cleaning leads to films with inverted Al-polarity. It is found that Al-assisted cleaning before growth enables the epitaxial film to maintain N-polarity. The grown N-polar AlN epilayer with its smooth, pit-free surface duplicates the structural quality of the substrate as evidenced by a clean and smooth growth interface with no noticeable extended defects generation. Near band-edge photoluminescence peaks are observed at room temperature on samples with MBE-grown layers but not on the bare AlN substrates, implying the suppression of non-radiative recombination centers in the epitaxial N-polar AlN. These results are pivotal steps towards future high-power RF electronics and deep ultraviolet photonics based on the N-polar AlN platform.

preprint2022arXiv

N-polar GaN p-n junction diodes with low ideality factors

High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V and an ideality factor of 1.6. As the temperature increases to 200 C, the apparent ideality factor gradually approaches 2. At such high temperatures, Shockley-Read-Hall recombination times of 0.32-0.46 ns are estimated. The measured electroluminescence spectrum is dominated by a strong near-band edge emission, while deep level and acceptor-related luminescence is greatly suppressed. A relatively high reverse breakdown field of 2.4 MV/cm without field-plates is achieved. This work indicates that the quality of N-polar GaN diodes is now approaching to that of their state-of-the-art Ga-polar counterparts.

preprint2021arXiv

Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3

We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an $α$-Ga$_2$O$_3$ thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on $m$-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73 eV to 8.75 eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with $M_0$-type van Hove singularities for polarization perpendicular to the $c$ axis, $E_{0,\perp}=5.46(6)$ eV and $E_{0,\perp}=6.04(1)$ eV, and one direct band-to-band transition with $M_1$-type van Hove singularity for polarization parallel with $E_{0,||}=5.44(2)$ eV. We further identify excitonic contributions with small binding energy of 7 meV associated with the lowest ordinary transition, and a hyperbolic exciton at the $M_1$-type critical point with large binding energy of 178 meV.

preprint2020arXiv

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date.