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Researcher profile

Yogesh Singh Chauhan

Yogesh Singh Chauhan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phcond-mat.str-elcond-mat.supr-conphysics.optics

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Published work

6 published item(s)

preprint2022arXiv

Dynamics of Multi-Domains in Ferroelectric Tunnel Junction

The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with an enormously high ON/OFF ratio. In the last 20 years, numerous studies have reported that the formation of multidomain in ferroelectric material is an inevitable process to minimize the total system energy. Recent studies based on phase-field simulations have demonstrated that domain nucleation/motion substantially alters the electrostatics of a ferroelectric material. However, the impact of domain dynamics on quantum transport in FTJ remains elusive. This paper presents a comprehensive study of multidomain dynamics in a ferroelectric tunnel junction. Analysis of this article is twofold; firstly, we study the impact of domain dynamics on electrostatics in an FTJ. Subsequently, the obtained electrostatics is used to study the variations in tunneling current, and TER originated from multidomain dynamics. We show that ON/OFF current density and TER vary locally in the ferroelectric region. Furthermore, the device's electrostatics and quantum transport exhibit an oscillatory nature due to periodic domain texture. ON/OFF current density shows a sine/cosine distribution in ferroelectric, and approximately one-decade local variation in current density is observed. These local fluctuations in current density cause oscillations in the device's ON/OFF ratio. Optimization techniques to achieve a uniform and maximum TER are also discussed. A 2D analytical and explicit model is derived by solving coupled 2D Poisson's equation and Landau-Ginzburg equation. The model incorporates the switching and nucleation of domains by minimizing net ferroelectric energy (depolarization+free+gradient energy density). Furthermore, the impact of the bottom insulator layer on ferroelectric's gradient energy is also studied.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Multi Spectral Switchable Infra-Red Reflectance Resonances in Highly Subwavelength Partially Oxidized Vanadium Thin Films

Phase transition materials are promising for realization of switchable optics. In this work, we show reflectance resonances in the near-infrared and long-wave infrared wavelengths in highly subwavelength partially oxidized Vanadium thin films. These partially oxidized films consist of a multilayer of Vanadium dioxide and Vanadium as shown using Raman spectroscopy and four-probe measurements. As Vanadium dioxide is a phase transition material that shows insulator to metal phase transition at 68 C, the observed infra-red resonances can be switched with temperature into a high-reflectance state. The wavelength of these resonances are passively tunable as a function of the oxidation duration. The obtained reflectance resonance at near-infrared wavelength red shifts from 1.78 um to 2.68 um with increasing oxidation duration while the long-wavelength infrared resonance blue shifts from 12.68 um to 9.96 um. To find the origin of the reflectance resonances, we model the reflectance spectra as a function of the oxidation duration using the transfer matrix method. The presented model captures the dual reflectance resonances reasonably well. These passive wavelength-tunable and switchable resonances with easy to fabricate lithography-free multilayer structure will be useful for multispectral applications such as camouflage, spectral selective microbolometer, and thermal management.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Physics and modeling of multi-domain FeFET with domain wall induced Negative Capacitance

In this paper, we present the dynamics and modeling of multi-domains in the ferroelectric FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit an oscillatory conduction band profile. To capture such oscillations, we solve coupled 2-D Poisson's equation with the net ferroelectric energy density (gradient energy + free energy + depolarization energy) equation. Multi-domain dynamics are captured by minimizing the net ferroelectric energy leading to a thermodynamically stable state. Furthermore, we show that the motion of domain walls originates local bound charge density in the ferroelectric region, which induces the negative capacitance (NC) effect. The strength of domain wall-induced NC is determined by the gradient energy of the ferroelectric material. FeFET exhibits variability in the drain current with domain period due to the inherent NC effect. Additionally, the impact of domain wall transition (soft$\rightleftharpoons$hard) on the device's electrostatic/transport is also analyzed. The model also accurately captures both nucleations of a new domain and the motion of the domain wall. Furthermore, the model is thoroughly validated against experimental results and phase-field simulations.

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preprint2022arXiv

Static negative susceptibility in ferromagnetic material induced by domain wall motion: an aspect of superconductor state

Domain wall motion in magnetic materiel induces the negative susceptibility leading to a perfect diamagnetism state. The local susceptibility is calculated by the derivative of magnetization ($\vec{M}$) vector w.r.t. magnetic field strength ($\vec{H}$) vector. In the transient region from the upward domain to the downward domain (domain wall width), local $\vec{M}$ and $\vec{H}$ vectors exhibit opposite slopes, which leads to a negative susceptibility value. A negative susceptibility value induces the diamagnetism effect leading to a relative permeability value $<$ 1 $\left(μ_r < 1\right)$. This diamagnetism sate originates due to the domain wall motion, which is an entirely different mechanism from the electron motion&#39;s induced diamagnetism. Furthermore, the strength of the diamagnetism state can be enhanced by tuning the gradient energy of a domain that may correspond to a perfect diamagnetism state $\left(χ_v \approx -1 \Rightarrow μ_r \rightarrow 0\right)$. Besides, we believe that there may be a possibility of sustaining such a diamagnetic state (domain wall induced) in a ferromagnetic material that is utterly contradictory to the conventional theory.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral field tunnel junction devices. We find that these monolayers have in-plane ferroelectricity, with their ferroelectric parameters being on par with other known 2D ferroelectric materials. Amongst SnSe, SnS, GeSe, and GeS, we find that GeS has the best ferroelectric parameters for device applications, which can be improved further by applying uniaxial tensile strain. We use the calculated ferroelectric properties of these materials to study the tunneling electroresistance (TER) of a 4 nm device based on lateral ferroelectric tunnel junction. We find a substantial TER ratio $10^3-10^5$ in the devices based on these materials, which can be further improved up to a factor of 40 on the application of tensile strain.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Temperature Dependence of $β-Ga_2O_3$ Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition

$β-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $β-Ga_2O_3$ epitaxial thin films with high growth rate has been recently reported using low pressure chemical vapor deposition (LPCVD) technique. In this work, we have investigated the effect of growth temperature on $β-Ga_2O_3$ films grown on c-plane sapphire substrates using LPCVD. We performed growths by varying temperatures from 800$^°$C to 950$^°$C while keeping all other growth parameters (Ar/O$_2$ gas flow rates, growth pressure, and Gallium precursor to substrate distance) constant. Optical, structural, and surface characterizations are performed to determine the bandgap, phase purity, crystal orientation, and crystalline quality of the grown thin films. Amorphous islands of $Ga_2O_3$ are observed at growth temperature of 800$^°$C while continuous and crystalline (-201) oriented $β-Ga_2O_3$ thin films are achieved for growth temperatures of 850$^°$C to 950$^°$C. Crystallinity of the films is found to improve with increase in growth temperature with a minimum rocking full width at half maximum of 1.52$^°$ in sample grown at 925$^°$C. For all the samples grown at and above 875$^°$C, transmittance measurements revealed an optical bandgap of ~4.77-4.80 eV with high growth rate of ~6 $μ$m/hr.

0 citations0 reviewsNo code linkedOpen access