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Researcher profile

Somnath Bhowmick

Somnath Bhowmick contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

8 published item(s)

preprint2022arXiv

Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral field tunnel junction devices. We find that these monolayers have in-plane ferroelectricity, with their ferroelectric parameters being on par with other known 2D ferroelectric materials. Amongst SnSe, SnS, GeSe, and GeS, we find that GeS has the best ferroelectric parameters for device applications, which can be improved further by applying uniaxial tensile strain. We use the calculated ferroelectric properties of these materials to study the tunneling electroresistance (TER) of a 4 nm device based on lateral ferroelectric tunnel junction. We find a substantial TER ratio $10^3-10^5$ in the devices based on these materials, which can be further improved up to a factor of 40 on the application of tensile strain.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Decoupled Strain Response of Ferroic Properties in Multiferroic VOCl2 Monolayer

Two-dimensional (2D) magnetoelectric multiferroics are promising multifunctional materials for miniaturized logic and memory devices. Herein, we explore the effectiveness of strain-engineering for tuning the properties of a recently predicted 2D antiferromagnetic-ferroelectric, VOCl2 monolayer. Interestingly, we find that magnetic-ordering and electric polarization can be tuned independently using uniaxial tensile strain along different in-plane lattice vectors. A 4% tensile strain along lattice vector b induces a transition from an antiferromagnetic (AFM) ground state with an out-of-plane magnetization to a ferromagnetic (FM) ground state with in-plane magnetization. On the other hand, tensile strain along lattice vector a enhances spontaneous electric polarization, without affecting the magnetic ordering. The monolayers remain dynamically stable under tensile strain, which further helps to raise the Curie temperature of ferromagnetism, as well as ferroelectricity. Such a strain-tunable multiferroic material holds great promises for future generation nanoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Role of interface morphology on the martensitic transformation in pure Fe

Using classical molecular dynamics simulations, we study austenite to ferrite phase transformation in iron, focusing on the role of interface morphology. We compare two different morphologies; a \textit{flat} interface in which the two phases are joined according to Nishiyama-Wasserman orientation relationship vs. a \textit{ledged} one, having steps similar to the vicinal surface. We identify the atomic displacements along a misfit dislocation network at the interface leading to the phase transformation. In case of \textit{ledged} interface, stacking faults are nucleated at the steps, which hinder the interface motion, leading to a lower mobility of the inter-phase boundary, than that of flat interface. Interestingly, we also find the temperature dependence of the interface mobility to show opposite trends in case of \textit{flat} vs. \textit{ledged} boundary. We believe that our study is going to present a unified and comprehensive view of martensitic transformation in iron with different interface morphology, which is lacking at present, as \textit{flat} and \textit{ledged} interfaces are treated separately in the existing literature.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

K$_2$CoS$_2$: A new two-dimensional in-plane antiferromagnetic insulator

The recent discovery of two-dimensional (2D) magnetic materials has brought magnetism to the flatland. This has opened up exciting opportunities for the exploration of fundamental physics as well as for novel device applications. Here, we predict a new thermodynamically stable 2D magnetic material, K$_2$CoS$_2$, which retains its in-plane anti-ferromagnetic order down to the monolayer and bilayer limits. We find that the magnetic moments ($2.5 μ_B/$Co) are aligned along the intra-Co chains, from monolayer to bulk. The non-magnetic electronic spectrum of both the monolayer and bilayer films is found to host flat bands and van-Hove singularities, which in instrumental in giving rise to the the magnetic ground state. Based on classical Monte-Carlo simulations, we estimate the Neel temperature for the antiferromagnetic monolayer to be $\approx 15$K. Our study thus establishes that K$_2$CoS$_2$ hosts a robust antiferromagnetic state which persists from the monolayer limit to the bulk material.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

BN white graphene with `colorful' edges--the energies and morphology

Interfaces play a key role in low dimensional materials like graphene or its boron nitrogen analog, white graphene. The edge energy of h-BN has not been reported as its lower symmetry makes it difficult to separate the opposite B-rich and N-rich zigzag sides. We report unambiguous energy values for arbitrary edges of BN, including the dependence on the elemental chemical potentials of B and N species. A useful manifestation of the additional Gibbs degree of freedom in the binary system, this dependence offers a way to control the morphology of pure BN or its carbon inclusions, and to engineer their electronic and magnetic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anisotropy of the Stone-Wales Defect and Warping of Graphene Nano-ribbons: A First-principles Analysis

Stone-Wales (SW) defects, analogous to dislocations in crystals, play an important role in mechanical behavior of $sp^2$-bonded carbon based materials. Here, we show using first-principles calculations that a marked anisotropy in the interaction among the SW defects has interesting consequences when such defects are present near the edges of a graphene nano-ribbon: depending on their orientation with respect to edge, they result in compressive or tensile stress, and the former is responsible to depression or warping of the graphene nano-ribbon. Such warping results in delocalization of electrons in the defect states.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Sensory Organ like Response of Zigzag Edge Graphene Nanoribbons

Using a continuum Dirac theory, we study the density and spin response of zigzag edge terminated graphene ribbons subjected to edge potentials and Zeeman fields. Our analytical calculations of the density and spin responses of the closed system (fixed particle number) to the static edge fields, show a highly nonlinear Weber-Fechner type behavior where the response depends logarithmically on the edge potential. The dependence of the response on the size of the system (e.g. width of a nanoribbon) is also uncovered. Zigzag edge graphene nanoribbons, therefore, provide a realization of response of organs such as the eye and ear that obey Weber-Fechner law. We validate our analytical results with tight binding calculations. These results are crucial in understanding important effects of electron-electron interactions in graphene nanoribbons such as edge magnetism etc., and also suggest possibilities for device applications of graphene nanoribbons.

0 citations0 reviewsNo code linkedOpen access