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Somnath Bhowmick

Somnath Bhowmick appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elquant-ph

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Published work

18 published item(s)

preprint2022arXiv

Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral field tunnel junction devices. We find that these monolayers have in-plane ferroelectricity, with their ferroelectric parameters being on par with other known 2D ferroelectric materials. Amongst SnSe, SnS, GeSe, and GeS, we find that GeS has the best ferroelectric parameters for device applications, which can be improved further by applying uniaxial tensile strain. We use the calculated ferroelectric properties of these materials to study the tunneling electroresistance (TER) of a 4 nm device based on lateral ferroelectric tunnel junction. We find a substantial TER ratio $10^3-10^5$ in the devices based on these materials, which can be further improved up to a factor of 40 on the application of tensile strain.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Decoupled Strain Response of Ferroic Properties in Multiferroic VOCl2 Monolayer

Two-dimensional (2D) magnetoelectric multiferroics are promising multifunctional materials for miniaturized logic and memory devices. Herein, we explore the effectiveness of strain-engineering for tuning the properties of a recently predicted 2D antiferromagnetic-ferroelectric, VOCl2 monolayer. Interestingly, we find that magnetic-ordering and electric polarization can be tuned independently using uniaxial tensile strain along different in-plane lattice vectors. A 4% tensile strain along lattice vector b induces a transition from an antiferromagnetic (AFM) ground state with an out-of-plane magnetization to a ferromagnetic (FM) ground state with in-plane magnetization. On the other hand, tensile strain along lattice vector a enhances spontaneous electric polarization, without affecting the magnetic ordering. The monolayers remain dynamically stable under tensile strain, which further helps to raise the Curie temperature of ferromagnetism, as well as ferroelectricity. Such a strain-tunable multiferroic material holds great promises for future generation nanoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Role of interface morphology on the martensitic transformation in pure Fe

Using classical molecular dynamics simulations, we study austenite to ferrite phase transformation in iron, focusing on the role of interface morphology. We compare two different morphologies; a \textit{flat} interface in which the two phases are joined according to Nishiyama-Wasserman orientation relationship vs. a \textit{ledged} one, having steps similar to the vicinal surface. We identify the atomic displacements along a misfit dislocation network at the interface leading to the phase transformation. In case of \textit{ledged} interface, stacking faults are nucleated at the steps, which hinder the interface motion, leading to a lower mobility of the inter-phase boundary, than that of flat interface. Interestingly, we also find the temperature dependence of the interface mobility to show opposite trends in case of \textit{flat} vs. \textit{ledged} boundary. We believe that our study is going to present a unified and comprehensive view of martensitic transformation in iron with different interface morphology, which is lacking at present, as \textit{flat} and \textit{ledged} interfaces are treated separately in the existing literature.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

K$_2$CoS$_2$: A new two-dimensional in-plane antiferromagnetic insulator

The recent discovery of two-dimensional (2D) magnetic materials has brought magnetism to the flatland. This has opened up exciting opportunities for the exploration of fundamental physics as well as for novel device applications. Here, we predict a new thermodynamically stable 2D magnetic material, K$_2$CoS$_2$, which retains its in-plane anti-ferromagnetic order down to the monolayer and bilayer limits. We find that the magnetic moments ($2.5 μ_B/$Co) are aligned along the intra-Co chains, from monolayer to bulk. The non-magnetic electronic spectrum of both the monolayer and bilayer films is found to host flat bands and van-Hove singularities, which in instrumental in giving rise to the the magnetic ground state. Based on classical Monte-Carlo simulations, we estimate the Neel temperature for the antiferromagnetic monolayer to be $\approx 15$K. Our study thus establishes that K$_2$CoS$_2$ hosts a robust antiferromagnetic state which persists from the monolayer limit to the bulk material.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

First Principles Prediction of Amorphous Phases Using Evolutionary Algorithms

We discuss the efficacy of evolutionary method for the purpose of structural analysis of amorphous solids. At present ab initio molecular dynamics (MD) based melt-quench technique is used and this deterministic approach has proven to be successful to study amorphous materials. We show that a stochastic approach motivated by Darwinian evolution can also be used to simulate amorphous structures. Applying this method, in conjunction with density functional theory (DFT) based electronic, ionic and cell relaxation, we re-investigate two well known amorphous semiconductors, namely silicon and indium gallium zinc oxide (IGZO). We find that characteristic structural parameters like average bond length and bond angle are within $\sim$ 2% to those reported by ab initio MD calculations and experimental studies.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Four allotropes of semiconducting layered Arsenic which switch into a topological insulator via an electric field: A computational study

We propose four different thermodynamically stable structural phases of arsenic monolayers based on ab-initio density functional theory calculations all of which undergo a topological phase transition on application of a perpendicular electric field. All the four arsenic monolayer allotropes have a wide band gap, varying from 1.21 eV to 3.0 eV (based on GW calculations), and in general they undergo a metal-insulator quantum phase transition on application of uniaxial in-layer strain. Additionally an increasing transverse electric field induces band-inversion at the Γ point in all four monolayer allotropes, leading to a nontrivial topological phase (insulating for three and metallic for one allotrope), characterized by the switching of the Z2 index, from 0 (before band inversion) to 1 (after band inversion). The topological phase tuned by the transverse electric field, should support spin-separated gapless edge states which should manifest in quantum spin Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

New ground states of fluorinated and oxidized phosphorene: structural and electronic properties

We systematically explore chemical functionalization of monolayer black phosphorene via chemisorption of oxygen and fluorine atoms. Using the cluster expansion technique, with vary- ing concentration of the adsorbate, we determine the ground states considering both single- as well as double- side chemisorption, which have novel chemical and electronic properties. The nature of the bandgap depends on the concentration of the adsorbate: for fluorination the direct bandgap first decreases, and then increases while becoming indirect, with increasing fluorination, while for oxidation the bandgap first increases and then decreases, while mostly maintaining its direct nature. Further we find that the unique anisotropic free-carrier effective mass for both the electrons and holes, can be changed and even rotated by 90 degrees, with controlled chemisorption, which can be useful for exploring unusual quantum Hall effect, and novel electronic devices based on phosphorene.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Thickness and electric field dependent polarizability and dielectric constant in phosphorene

Based on extensive first principle calculations, we explore the thickness dependent effective di- electric constant and slab polarizability of few layer black phosphorene. We find that the dielectric constant in ultra-thin phosphorene is thickness dependent and it can be further tuned by applying an out of plane electric field. The decreasing dielectric constant with reducing number of layers of phosphorene, is a direct consequence of the lower permittivity of the surface layers and the in- creasing surface to volume ratio. We also show that the slab polarizability depends linearly on the number of layers, implying a nearly constant polarizability per phosphorus atom. Our calculation of the thickness and electric field dependent dielectric properties will be useful for designing and interpreting transport experiments in gated phosphorene devices, wherever electrostatic effects such as capacitance, charge screening etc. are important.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effective Doping of Monolayer Phosphorene by Surface Adsorption of Atoms for Electronic and Spintronic Applications

We study the effect of surface adsorption of 27 different adatoms on the electronic and magnetic properties of monolayer black phosphorus using density functional theory. Choosing a few representative elements from each group, ranging from alkali metals (group I) to halogens (group VII), we calculate the band structure, density of states, magnetic moment and effective mass for the energetically most stable location of the adatom on monolayer phosphorene. We predict that group I metals (Li, Na, K), and group III adatoms (Al, Ga, In) are effective in enhancing the n-type mobile carrier density, with group III adatoms resulting in lower effective mass of the electrons, and thus higher mobilities. Furthermore we find that the adatoms of transition metals Ti and Fe, produce a finite magnetic moment (1.87 and 2.31 $μ_B$) in monolayer phosphorene, with different band gap and electronic effective masses (and thus mobilities), which approximately differ by a factor of 10 for spin up and spin down electrons opening up the possibility for exploring spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electric field induced gap modification in ultrathin blue phosphorous

We investigate the possibility of band structure engineering in the recently predicted 2D layered form of blue phosphorus via an electric field (E$_z$) applied perpendicular to the layer(s). Using density functional theory, we study the effect of a transverse electric field in monolayer, as well as three differently stacked bilayer structures of blue phosphorus. We find that, for E$_z > 0.2$ V/Å the direct energy gap at the $Γ$ point, which is much larger than the default indirect band gap of mono- and bilayer blue phosphorus, decreases linearly with the increasing electric field; becomes comparable to the default indirect band gap at E$_z \approx 0.45 (0.35)$ V/Å for monolayer (bilayers) and decreases further until the semiconductor to metal transition of 2D blue phosphorus takes place at E$_z\approx 0.7 (0.5)$ V/Å for monolayer (bilayers). Calculated values of the electron and hole effective masses along various high symmetry directions in the reciprocal lattice suggests that the mobility of charge carriers is also influenced by the applied electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Achieving atomic resolution magnetic dichroism by controlling the phase symmetry of an electron probe

The calculations presented here reveal that an electron probe carrying orbital angular momentum is just a particular case of a wider class of electron beams that can be used to measure electron magnetic circular dichroism (EMCD) with atomic resolution. It is possible to obtain an EMCD signal with atomic resolution by simply breaking the symmetry of the electron probe phase distribution using the aberration-corrected optics of an scanning transmission electron microscope. The required phase distribution of the probe depends on the magnetic symmetry and crystal structure of the sample. The calculations indicate that EMCD signals utilizing the phase of the electron probe are as strong as those obtained by nanodiffraction methods.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Boundaries for efficient use of electron vortex beams to measure magnetic properties

Development of experimental techniques for characterization of magnetic properties at high spatial resolution is essential for progress in miniaturization of magnetic devices, for example, in data storage media. Inelastic scattering of electron vortex beams (EVB) was recently reported to contain atom-specific magnetic information. We have developed a theoretical description of inelastic scattering of EVB on crystals and performed simulations for EVB of different diameters. We show that use of an EVB wider than an interatomic distance does not provide any advantage over an ordinary convergent beam without angular momentum. On the other hand, in the atomic resolution limit, electron energy loss spectra measured by EVB are strongly sensitive to the spin and orbital magnetic moments of studied matter, when channeling through or very close to the atomic columns. Our results demonstrate the boundaries for efficient use of EVB in measurement of magnetic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Scattering of electron vortex beams on a magnetic crystal: towards atomic resolution magnetic measurements

Use of electron vortex beams (EVB), that is convergent electron beams carrying an orbital angular momentum (OAM), is a novel development in the field of transmission electron microscopy. They should allow measurement of element-specific magnetic properties of thin crystals using electron magnetic circular dichroism (EMCD)---a phenomenon similar to the x-ray magnetic circular dichroism. Recently it has been shown computationally that EVBs can detect magnetic signal in a scanning mode only at atomic resolution. In this follow-up work we explore in detail the elastic and inelastic scattering properties of EVBs on crystals, as a function of beam diameter, initial OAM, acceleration voltage and beam displacement from an atomic column. We suggest that for a 10 nm layer of bcc iron oriented along (001) zone axis an optimal configuration for a detection of EMCD is an EVB with OAM of $1\hbar$ and a diameter of 1.6 Å, acceleration voltage 200 keV and an annular detector with inner and outer diameters of $G$ and $5G$, respectively, where $\mathbf{G}=(100)$.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Sensory organ like response determines the magnetism of zigzag-edged honeycomb nanoribbons

We present an analytical theory for the magnetic phase diagram for zigzag edge terminated honeycomb nanoribbons described by a Hubbard model with an interaction parameter U . We show that the edge magnetic moment varies as ln U and uncover its dependence on the width W of the ribbon. The physics of this owes its origin to the sensory organ like response of the nanoribbons, demonstrating that considerations beyond the usual Stoner-Landau theory are necessary to understand the magnetism of these systems. A first order magnetic transition from an anti-parallel orientation of the moments on opposite edges to a parallel orientation occurs upon doping with holes or electrons. The critical doping for this transition is shown to depend inversely on the width of the ribbon. Using variational Monte-Carlo calculations, we show that magnetism is robust to fluctuations. Additionally, we show that the magnetic phase diagram is generic to zigzag edge terminated nanostructures such as nanodots. Furthermore, we perform first principles modeling to show how such magnetic transitions can be realized in substituted graphene nanoribbons.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

BN white graphene with `colorful' edges--the energies and morphology

Interfaces play a key role in low dimensional materials like graphene or its boron nitrogen analog, white graphene. The edge energy of h-BN has not been reported as its lower symmetry makes it difficult to separate the opposite B-rich and N-rich zigzag sides. We report unambiguous energy values for arbitrary edges of BN, including the dependence on the elemental chemical potentials of B and N species. A useful manifestation of the additional Gibbs degree of freedom in the binary system, this dependence offers a way to control the morphology of pure BN or its carbon inclusions, and to engineer their electronic and magnetic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anisotropy of the Stone-Wales Defect and Warping of Graphene Nano-ribbons: A First-principles Analysis

Stone-Wales (SW) defects, analogous to dislocations in crystals, play an important role in mechanical behavior of $sp^2$-bonded carbon based materials. Here, we show using first-principles calculations that a marked anisotropy in the interaction among the SW defects has interesting consequences when such defects are present near the edges of a graphene nano-ribbon: depending on their orientation with respect to edge, they result in compressive or tensile stress, and the former is responsible to depression or warping of the graphene nano-ribbon. Such warping results in delocalization of electrons in the defect states.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Sensory Organ like Response of Zigzag Edge Graphene Nanoribbons

Using a continuum Dirac theory, we study the density and spin response of zigzag edge terminated graphene ribbons subjected to edge potentials and Zeeman fields. Our analytical calculations of the density and spin responses of the closed system (fixed particle number) to the static edge fields, show a highly nonlinear Weber-Fechner type behavior where the response depends logarithmically on the edge potential. The dependence of the response on the size of the system (e.g. width of a nanoribbon) is also uncovered. Zigzag edge graphene nanoribbons, therefore, provide a realization of response of organs such as the eye and ear that obey Weber-Fechner law. We validate our analytical results with tight binding calculations. These results are crucial in understanding important effects of electron-electron interactions in graphene nanoribbons such as edge magnetism etc., and also suggest possibilities for device applications of graphene nanoribbons.

0 citations0 reviewsNo code linkedOpen access