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Amit Verma

Amit Verma appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallquant-phcond-mat.str-elphysics.opticsComputationphysics.ao-phphysics.app-phphysics.data-an

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Published work

22 published item(s)

preprint2024arXiv

Dynamic Multi Color Switching using Ultrathin Vanadium Oxide on Aluminium based Asymmetric Fabry-Perot Resonant Structure

Vanadium dioxide ($VO_{2}$) exhibits strong infrared optical switching due to its insulator-metal phase-transition property. However, in the visible wavelengths, it's intrinsic optical switching is quite low. Current research explores solutions like multilayering, intricate structural patterning, high thermal budget processes and costly metals for improved color switching. Nonetheless, the color gamut coverage with these methodologies remains notably limited. This work overcomes these limitations and demonstrates dynamic multi-colour switching covering a large color gamut using a simple, unpatterned, ultrathin ($\sim$ $\fracλ{14}$, where wavelength $λ$ is taken as 575 nm at the center of visible spectrum) asymmetric Fabry-Pérot structure of $VO_{2}$ on Aluminium (Al). We use the transfer matrix method to design the $VO_{2}/Aluminium\,(Al)/Sapphire$ structure for maximum visible reflectance switching. $VO_{2}$ films are synthesized using a simple, low thermal budget atmospheric oxidation of Vanadium (V). With varying oxidation durations, different colors of the oxidized samples are observed. Consistent and reversible color-switching is observed visibly and in reflectance measurements with the change in temperature from low (RT $\sim$ 30$^{\circ}$C) to high (HT $\sim$ 100$^{\circ}$C) or vice versa due to the phase transition property of the $VO_{2}$ layer in the structure. Compared to the existing studies, this work shows a significant change in chromaticities and covers a large color gamut when plotted on the CIE chromaticity diagram. This work has potential applications in the fields of display, thermochromic structures, and visible camouflage.

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preprint2023arXiv

Bilayer Vanadium Dioxide Thin Film with Elevated Transition Temperatures and High Resistance Switching

Despite widespread interest in the phase-change applications of vanadium dioxide (VO$_2$), the fabrication of high-quality VO$_2$ thin films with elevated transition temperatures (TIMT) and high Insulator-Metal-Transition resistance switching still remains a challenge. This study introduces a two-step atmospheric oxidation approach to fabricate bilayer VO$_{2-x}$/VO$_2$ films on a c-plane sapphire substrate. To quantify the impact of the VO$_2$ buffer layer, a single-layer VO$_2$ film of the same thickness was also fabricated. The bilayer VO$_{2-x}$/VO$_2$ films wherein the top VO$_{2-x}$ film was under-oxidized demonstrated an elevation in TIMT reaching ~97 $^\circ$C, one of the highest reported to date for VO$_2$ films and is achieved in a doping-free manner. Our results also reveal a one-order increase in resistance switching, with the optimum bilayer VO$_2$/VO$_2$ film exhibiting ~3.6 orders of switching from 25 $^\circ$C to 110 $^\circ$C, compared to the optimum single-layer VO$_2$ reference film. This is accompanied by a one-order decrease in the on-state resistance in its metallic phase. The elevation in TIMT, coupled with increased strain extracted from the XRD characterization of the bilayer film, suggests the possibility of compressive strain along the c-axis. These VO$_{2-x}$/VO$_2$ films also demonstrate a significant change in the slope of their resistance vs temperature curves contrary to the conventional smooth transition. This feature was ascribed to the rutile/monoclinic quasi-heterostructure formed due to the top VO$_{2-x}$ film having a reduced TIMT. Our findings carry significant implications for both the lucid fabrication of VO$_2$ thin film devices as well as the study of phase transitions in correlated oxides.

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preprint2022arXiv

Multi Spectral Switchable Infra-Red Reflectance Resonances in Highly Subwavelength Partially Oxidized Vanadium Thin Films

Phase transition materials are promising for realization of switchable optics. In this work, we show reflectance resonances in the near-infrared and long-wave infrared wavelengths in highly subwavelength partially oxidized Vanadium thin films. These partially oxidized films consist of a multilayer of Vanadium dioxide and Vanadium as shown using Raman spectroscopy and four-probe measurements. As Vanadium dioxide is a phase transition material that shows insulator to metal phase transition at 68 C, the observed infra-red resonances can be switched with temperature into a high-reflectance state. The wavelength of these resonances are passively tunable as a function of the oxidation duration. The obtained reflectance resonance at near-infrared wavelength red shifts from 1.78 um to 2.68 um with increasing oxidation duration while the long-wavelength infrared resonance blue shifts from 12.68 um to 9.96 um. To find the origin of the reflectance resonances, we model the reflectance spectra as a function of the oxidation duration using the transfer matrix method. The presented model captures the dual reflectance resonances reasonably well. These passive wavelength-tunable and switchable resonances with easy to fabricate lithography-free multilayer structure will be useful for multispectral applications such as camouflage, spectral selective microbolometer, and thermal management.

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preprint2021arXiv

Temperature Dependence of $β-Ga_2O_3$ Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition

$β-Ga_2O_3$ has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown strength ~7-8 MV/cm. Growth of $β-Ga_2O_3$ epitaxial thin films with high growth rate has been recently reported using low pressure chemical vapor deposition (LPCVD) technique. In this work, we have investigated the effect of growth temperature on $β-Ga_2O_3$ films grown on c-plane sapphire substrates using LPCVD. We performed growths by varying temperatures from 800$^°$C to 950$^°$C while keeping all other growth parameters (Ar/O$_2$ gas flow rates, growth pressure, and Gallium precursor to substrate distance) constant. Optical, structural, and surface characterizations are performed to determine the bandgap, phase purity, crystal orientation, and crystalline quality of the grown thin films. Amorphous islands of $Ga_2O_3$ are observed at growth temperature of 800$^°$C while continuous and crystalline (-201) oriented $β-Ga_2O_3$ thin films are achieved for growth temperatures of 850$^°$C to 950$^°$C. Crystallinity of the films is found to improve with increase in growth temperature with a minimum rocking full width at half maximum of 1.52$^°$ in sample grown at 925$^°$C. For all the samples grown at and above 875$^°$C, transmittance measurements revealed an optical bandgap of ~4.77-4.80 eV with high growth rate of ~6 $μ$m/hr.

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preprint2020arXiv

HINT: A Hierarchical Independent Component Analysis Toolbox for Investigating Brain Functional Networks using Neuroimaging Data

Independent component analysis (ICA) is a popular tool for investigating brain organization in neuroscience research. In fMRI studies, an important goal is to study how brain networks are modulated by subjects' clinical and demographic variables. Existing ICA methods and toolboxes don't incorporate subjects' covariates effects in ICA estimation of brain networks, which potentially leads to loss in accuracy and statistical power in detecting brain network differences between subjects' groups. We introduce a Matlab toolbox, HINT (Hierarchical INdependent component analysis Toolbox), that provides a hierarchical covariate-adjusted ICA (hc-ICA) for modeling and testing covariate effects and generates model-based estimates of brain networks on both the population- and individual-level. HINT provides a user-friendly Matlab GUI that allows users to easily load images, specify covariate effects, monitor model estimation via an EM algorithm, specify hypothesis tests, and visualize results. HINT also has a command line interface which allows users to conveniently run and reproduce the analysis with a script. HINT implements a new multi-level probabilistic ICA model for group ICA. It provides a statistically principled ICA modeling framework for investigating covariate effects on brain networks. HINT can also generate and visualize model-based network estimates for user-specified subject groups, which greatly facilitates group comparisons.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Generalized binomial state: Nonclassical features observed through various witnesses and a measure of nonclassicality

Experimental realization of various quantum states of interest has become possible in the recent past due to the rapid developments in the field of quantum state engineering. Nonclassical properties of such states have led to various exciting applications, specifically in the area of quantum information processing. The present article aims to study lower- and higher-order nonclassical features of such an engineered quantum state (a generalized binomial state based on Abel's formula). Present study has revealed that the state studied here is highly nonclassical. Specifically, higher-order nonclassical properties of this state are reported using a set of witnesses, like higher-order antibunching, higher-order sub-Poissonian photon statistics, higher-order squeezing (both Hong Mandel type and Hillery type). A set of other witnesses for lower- and higher-order nonclassicality (e.g., Vogel's criterion and Agarwal's A parameter) have also been explored. Further, an analytic expression for the Wigner function of the generalized binomial state is reported and the same is used to witness nonclassicality and to quantify the amount of nonclassicality present in the system by computing the nonclassical volume (volume of the negative part of the Wigner function). Optical tomogram of the generalized binomial state is also computed for various conditions as Wigner function cannot be measured directly in an experiment in general, but the same can be obtained from the optical tomogram with the help of Radon transform.

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preprint2017arXiv

Higher order nonclassicalities of finite dimensional coherent states: A comparative study

Conventional coherent states (CSs) are defined in various ways. For example, CS is defined as an infinite Poissonian expansion in Fock states, as displaced vacuum state, or as an eigenket of annihilation operator. In the infinite dimensional Hilbert space, these definitions are equivalent. However, these definitions are not equivalent for the finite dimensional systems. In this work, we present a comparative description of the lower- and higher-order nonclassical properties of the finite dimensional CSs which are also referred to as qudit CSs (QCSs). For the comparison, nonclassical properties of two types of QCSs are used: (i) nonlinear QCS produced by applying a truncated displacement operator on the vacuum and (ii) linear QCS produced by the Poissonian expansion in Fock states of the CS truncated at (d-1)-photon Fock state. The comparison is performed using a set of nonclassicality witnesses (e.g., higher order antiubunching, higher order sub-Poissonian statistics, higher order squeezing, Agarwal-Tara parameter, Klyshko's criterion) and a set of quantitative measures of nonclassicality (e.g., negativity potential, concurrence potential and anticlassicality). The higher order nonclassicality witness have found to reveal the existence of higher order nonclassical properties of QCS for the first time.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Intrinsic Electron Mobility Limits in beta-Ga2O3

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in beta-Ga2O3 to lower than 200 cm2/Vs at 300 K for donor doping densities lower than 1018 cm-3. In spite of similar electron effective mass of beta-Ga2O3 to GaN, the electron mobility is 10x lower because of a massive Frohlich interaction, due to the low phonon energies stemming from the crystal structure and strong bond ionicity. Based on the theoretical and experimental analysis, we provide an empirical expression for electron mobility in beta-Ga2O3 that should help calibrate its potential in high performance device design and applications.

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preprint2016arXiv

Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs

Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide heterointerfaces (such as SrTiO3/GdTiO3 or SrTiO3/SmTiO3) is challenging because it requires enormous gate capacitances. One way to achieve large gate capacitances is by geometrical capacitance enhancement in fin structures. In this work, we fabricate both Au-gated planar field effect transistors (FETs) and Fin-FETs with varying fin-widths on 60nm SrTiO3/5nm SmTiO3 thin films grown by hybrid molecular beam epitaxy (hMBE). We find that the FinFETs exhibit higher gate capacitance compared to planar FETs. By scaling down the SrTiO3/SmTiO3 fin widths, we demonstrate further gate capacitance enhancement, almost twice compared to the planar FETs. In the FinFETs with narrowest fin-widths, we demonstrate a record 2DEG electron concentration modulation of ~2.4 x 1014 cm-2.

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preprint2015arXiv

A General Method for Selecting Quantum Channel for Bidirectional Controlled State Teleportation and Other Schemes of Controlled Quantum Communication

Recently, a large number of protocols for bidirectional controlled state teleportation (BCST) have been proposed using $n$-qubit entangled states ($n\in\{5,6,7\}$) as quantum channel. Here, we propose a general method of selecting multi-qubit $(n>4)$ quantum channels suitable for BCST and show that all the channels used in the existing protocols of BCST can be obtained using the proposed method. Further, it is shown that the quantum channels used in the existing protocols of BCST forms only a negligibly small subset of the set of all the quantum channels that can be constructed using the proposed method to implement BCST. It is also noted that all these quantum channels are also suitable for controlled bidirectional remote state preparation (CBRSP). Following the same logic, methods for selecting quantum channels for other controlled quantum communication tasks, such as controlled bidirectional joint remote state preparation (CJBRSP) and controlled quantum dialogue, are also provided.

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preprint2015arXiv

Ferroelectric Transition in Compressively Strained SrTiO3 Thin Films

We report the temperature dependent capacitance-voltage characteristics of Pt/SrTiO3 Schottky diodes fabricated using compressively strained SrTiO3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. The measurements reveal a divergence of the out of plane dielectric constant of SrTiO3 peaked at ~140K, implying a ferroelectric transition. A Curie-Weiss law fit to the zero-bias dielectric constant suggests a Curie temperature of ~56 K. This observation provides experimental confirmation of the theoretical prediction of out of plane ferroelectricity in compressively strained SrTiO3 thin films grown on LSAT substrate. We also discuss the roles of the field-dependent dielectric constant and the interfacial layer in SrTiO3 on the extraction of the Curie temperature.

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preprint2015arXiv

Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells

We study solar cell properties of single silicon wires connected at their ends to two dissimilar metals of different work functions. Effects of wire dimensions, the work functions of the metals, and minority carrier lifetimes on short circuit current as well as open circuit voltage are studied. The most efficient photovoltaic behavior is found to occur when one metal makes a Schottky contact with the wire, and the other makes an Ohmic contact. As wire length increases, both short circuit current and open circuit voltage increase before saturation occurs. Depending on the work function difference between the metals and the wire dimensions, the saturation length increases by approximately an order of magnitude with a two order magnitude increase in minority carrier length. However current per surface area exposed to light is found to decrease rapidly with increase in length. The use of a multi-contact interdigitated design for long wires is investigated to increase the photovoltaic response of the devices.

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preprint2015arXiv

Simulation Study of Schottky Contact Based Single Si Wire Solar Cell

We simulate single silicon nanowire (SiNW) solar cells with dissimilar work function metal contacts. Both short circuit current (ISC) and open circuit voltage (VOC) have been investigated. Effects of nanowire dimension, minority carrier lifetime, and contact metal work function difference are understood through simulations. Both ISC and VOC increase with nanowire length but saturate due to minority carrier recombination. The saturation length is found to be five times the diffusion length. The larger the contact work function difference, the more improved the solar cell characteristics. Large work function differences may also avoid need for any doping in axial p-i-n nanowire solar cells. Saturation in ISC as well as degradation in current density with length can be minimized by spreading the contacts along the length of the nanowire.

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preprint2014arXiv

Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide

The thermal conductivities of beta-Ga2O3 single crystals along four different crystal directions were measured in the temperature range of 80-495K using the time domain thermoreflectance (TDTR) method. A large anisotropy was found. At room temperature, the [010] direction has the highest thermal conductivity of 27.0+/-2.0 W/mK, while that along the [100] direction has the lowest value of 10.9+/-1.0 W/mK. At high temperatures, the thermal conductivity follows a ~1/T relationship characteristic of Umklapp phonon scattering, indicating phonon-dominated heat transport in the \b{eta}-Ga2O3 crystal. The measured experimental thermal conductivity is supported by first-principles calculations which suggest that the anisotropy in thermal conductivity is due to the differences of the speed of sound along different crystal directions.

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preprint2014arXiv

Au-Gated SrTiO3 Field-Effect Transistors with Large Electron Concentration and Current Modulation

We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO3. As a result of the large dielectric constant of SrTiO3 and the large Schottky barrier height of Au, the Au-gated MESFETs are able to modulate ~1.6 x 1014 cm-2 electron density, the highest modulation yet achieved using metal gates in any material system. These MESFETs modulate current densities up to ~68 mA/mm, ~20x times larger than the best demonstrated SrTiO3 MESFETs. We also discuss the roles of the interfacial layer, and the field-dependent dielectric constant of SrTiO3 in increasing the pinch off voltage of the MESFET.

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preprint2014arXiv

Intrinsic Mobility Limiting Mechanisms in Lanthanum-doped Strontium Titanate

The temperature dependent Hall mobility data from La-doped SrTiO3 thin films has been analyzed and modeled considering various electron scattering mechanisms. We find that a ~6 meV transverse optical phonon (TO) deformation potential scattering mechanism is necessary to explain the dependence of transport on temperature between 10-200 K. Also, we find that the low temperature electron mobility in intrinsic (nominally undoped) SrTiO3 is limited by acoustic phonon scattering. Adding the above two scattering mechanisms to longitudinal optical phonon (LO) and ionized impurity scattering mechanisms, excellent quantitative agreement between mobility measurement and model is achieved in the whole temperature range (2-300K) and carrier concentrations ranging over a few orders of magnitude (8x1017 cm-3 - 2x1020 cm-3).

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preprint2013arXiv

High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.

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preprint2013arXiv

Multiscale periodicities in aerosol optical depth over India

Aerosols exhibit periodic or cyclic variations depending on natural and anthropogenic sources over a region, which can get modulated by synoptic meteorological parameters such as winds, rainfall and relative humidity, and long-range transport. Information on periodicity and phase in aerosol properties assumes significance in prediction as well as to examine the radiative and climate effects of aerosols including its association with changes in cloud properties and rainfall. Periodicity in aerosol optical depth, which is a columnar measure of aerosol distribution, is determined using continuous wavelet transform over 35 locations in India. Continuous wavelet transform is used in the study because it is better suited to extract the periodic and local modulations present at various frequency ranges, as these features are invisible in conventional methods such as Fourier Transform. Monthly mean aerosol optical depths (AODs) from MODerate Resolution Imaging Spectroradiometer (MODIS) on board the Terra satellite from January 2001 to December 2012 are used. Annual and quasi-biennial oscillations (QBO) in AOD are evident in addition to the weak semi-annual and quasi-triennial. The semi-annual and annual oscillations are consistent with the seasonal and yearly cycle of variations in AODs. The 40-month periodicity indicates the presence of long term correlations in AOD. The observed periodicities in MODIS Terra AODs are also evident in the ground-based AOD measurements made over Kanpur in the Indo-Gangetic Plain. The phase of the periodicity in AOD is stable in the mid-frequency range, while local disturbances in the high-frequency range and long term changes in the atmospheric composition give rise to unstable phases in low-frequency range. That modulations in AOD over one location/region can influence the other is revealed by the presence of phase relation among different locations.

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preprint2013arXiv

Optoelectronic response calculations in the framework of k.p coupled to Non-equilibrium Green's functions for 1D systems in the ballistic limit

We present theory of the carrier-optical interaction in 1D systems based on the non-equilibrium Greens function formalism in the 4x4 k.p model. As a representative parameters we chose the GaAs. Although theory is presented in 4x4 k.p many subbands, results and discussion section is based on the simplified model such as 2x2 k.p model (two transverse modes). Even though 2x2 k.p model is simple enough it shows many phenomena that have not been seen before. We focus mainly on the ballistic extraction of photogenerated free carriers at the radiative limit which is described by the self-energy term derived in dipole approximation and solved in self-consistent manner with Keldysh quantum kinetic equations. Any relaxation or non-radiative recombination mechanisms as well as excitonic features are neglected. Effect of non-locality of electron-photon self energy term is considered and discussed. Spontaneous emission is also considered and shown to be small in short devices under medium bias conditions. Electron and hole spatial current oscillations are seen and discussed. It is shown that neglecting off-diagonal correlation in the band index not only produces quantitatively wrong results but it also alters the qualitative picture. All simulations are done in the full-rank approximation, with all spatial and band correlation effects are kept intact. This allows us to study not only quantitative effects but also qualitative behaviour.

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preprint2010arXiv

Higher Order Squeezing and Higher Order Subpoissonian Photon Statistics in Intermediate States

Recently simpler criteria for the Hong-Mandel higher order squeezing (HOS) and higher order subpossonian photon statistics (HOSPS) are provided by us [Phys. Lett. A 374 (2010) 1009]. Here we have used these simplified criteria to study the possibilities of observing HOSPS and HOS in different intermediate states, such as generalized binomial state, hypergeometric state, negative binomial state and photon added coherent state. It is shown that these states may satisfy the condition of HOS and HOSPS. It is also shown that the depth and region of nonclassicality can be controlled by controlling various parameters related to intermediate states. Further, we have analyzed the mutual relationship between different signatures of higher order nonclassicality with reference to these intermediate states. We have observed that the generalized binomial state may show signature of HOSPS in absence of HOS. Earlier we have shown that NLVSS shows HOS in absence of HOSPS. Consequently it is established that the HOSPS and HOS of same order are independent phenomenon.

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preprint2009arXiv

Generalized structure of higher order nonclassicality

A generalized notion of higher order nonclassicality (in terms of higher order moments) is introduced. Under this generalized framework of higher order nonclassicality, conditions of higher order squeezing and higher order subpoissonian photon statistics are derived. A simpler form of the Hong-Mandel higher order squeezing criterion is derived under this framework by using an operator ordering theorem introduced by us in [J. Phys. A. 33 (2000) 5607]. It is also generalized for multi-photon Bose operators of Brandt and Greenberg. Similarly, condition for higher order subpoissonian photon statistics is derived by normal ordering of higher powers of number operator. Further, with the help of simple density matrices, it is shown that the higher order antibunching (HOA) and higher order subpoissonian photon statistics (HOSPS) are not the manifestation of the same phenomenon and consequently it is incorrect to use the condition of HOA as a test of HOSPS. It is also shown that the HOA and HOSPS may exist even in absence of the corresponding lower order phenomenon. Binomial state, nonlinear first order excited squeezed state (NLESS) and nonlinear vacuum squeezed state (NLVSS) are used as examples of quantum state and it is shown that these states may show higher order nonclssical characteristics. It is observed that the Binomial state which is always antibunched, is not always higher order squeezed and NLVSS which shows higher order squeezing does not show HOSPS and HOA. The opposite is observed in NLESS and consequently it is established that the HOSPS and HOS are two independent signatures of higher order nonclassicality

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preprint2008arXiv

Reduction of Quantum Phase Fluctuations in Intermediate States

Recently we have shown that the reduction of the Carruthers-Nieto symmetric quantum phase fluctuation parameter (U) with respect to its coherent state value corresponds to an antibunched state, but the converse is not true. Consequently reduction of U is a stronger criterion of nonclassicality than the lowest order antibunching. Here we have studied the possibilities of reduction of $U$ in intermediate states by using the Barnett Pegg formalism. We have shown that the reduction of phase fluctuation parameter U can be seen in different intermediate states, such as binomial state, generalized binomial state, hypergeometric state, negative binomial state, and photon added coherent state. It is also shown that the depth of nonclassicality can be controlled by various parameters related to intermediate states. Further, we have provided specific examples of antibunched states, for which $U$ is greater than its poissonian state value.

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