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Researcher profile

Yia-Chung Chang

Yia-Chung Chang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2021arXiv

Density functional calculations of atomic structure, charging effect, and static dielectric constant of two-dimensional systems based on B-splines

We implement a total-energy minimization scheme to allow for relaxation of atomic positions in density functional calculations for two-dimensional (2D) systems using a mixed basis set. The basis functions consist of products of 2D plane waves in the plane of the material and localized B-splines along the perpendicular direction. By using this mixed basis approach (MBA), we studied the atomic relaxation and charge polarization of 2D systems under an applied electric field. Compared to the conventional supercell approach (SCA) which adopts repeated slabs sandwiched between vacuum regions, MBA makes no requirement of compensating background charge for treating electrically charged 2D systems due to carrier injection. Furthermore, with MBA, the sawtooth potentials for systems under the applied field to maintain periodicity as needed in SCA is automatically avoided. From the linear response of charge polarization to the applied field, we introduced a simple method to determine the out-of-plane dielectric constants of 2D materials without the ambiguity of defining their effective thickness. Selected 2D systems including graphene and transition-metal dichalcogenides are tested. Our MBA results are consistent with previous SCA calculations when both approaches are equally applicable. However, for the charged system with high carrier density, we found significant deviation from SCA results obtained by imposing artificial charge neutrality condition. PACS: 71.15.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electric-field-tunable intervalley excitons and phonon replicas in bilayer WSe$_2$

We report the direct observation of intervalley exciton between the Q conduction valley and $Γ$ valence valley in bilayer WSe$_2$ by photoluminescence. The Q$Γ$ exciton lies at ~18 meV below the QK exciton and dominates the luminescence of bilayer WSe$_2$. By measuring the exciton spectra at gate-tunable electric field, we reveal different interlayer electric dipole moments and Stark shifts between Q$Γ$ and QK excitons. Notably, we can use the electric field to switch the energy order and dominant luminescence between Q$Γ$ and QK excitons. Both Q$Γ$ and QK excitons exhibit pronounced phonon replicas, in which two-phonon replicas outshine the one-phonon replicas due to the existence of (nearly) resonant exciton-phonon scatterings and numerous two-phonon scattering paths. We can simulate the replica spectra by comprehensive theoretical modeling and calculations. The good agreement between theory and experiment for the Stark shifts and phonon replicas strongly supports our assignment of Q$Γ$ and QK excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Bloch-Grüneisen temperature and universal scaling of normalized resistivity in doped graphene revisited

In this work, we resolved some controversial issues on the Bloch-Grüneisen (BG) temperature in doped graphene via analytical and numerical calculations based on full inelastic electron-acoustic-phonon (EAP) scattering rate and various approximation schemes. Analytic results for BG temperature obtained by semi-inelastic (SI) approximation (which gives scattering rates in excellent agreement with the full inelastic scattering rates) are compared with those obtained by quasi-elastic (QE) approximation and the commonly adopted value of $Θ^{LA}_{F} = 2\hbar v_{LA} k_F/k_B$. It is found that the commonly adopted BG temperature in graphene ($Θ^{LA}_{F}$) is about 5 times larger than the value obtained by the QE approximation and about 2.5 times larger than that by the SI approximation, when using the crossing-point temperature where low-temperature and high-temperature limits of the resistivity meet. The corrected analytic relation based on SI approximation agrees extremely well with the transition temperatures determined by fitting the the low- and high-$T$ behavior of available experimental data of graphene's resistivity. We also introduce a way to determine the BG temperature including the full inelastic EAP scattering rate and the deviation of electron energy from the chemical potential ($μ$) numerically by finding the maximum of $\partial ρ(μ,T)/\partial T$. Using the analytic expression of $Θ_{BG,1}$ we can prove that the normalized resistivity defined as $R_{1}=ρ(μ,T)/ρ(μ,Θ_{BG,1})$ plotted as a function of $(T/Θ_{BG,1})$ is independent of the carrier density. Applying our results to previous experimental data extracted shows a universal scaling behavior, which is different from previous studies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-tunable exciton-polaron Rydberg series with strong roton effect

The electronic exciton polaron is a hypothetical many-body quasiparticle formed by an exciton dressed with a polarized electron-hole cloud in the Fermi sea (FS). It is predicted to display rich many-body physics and unusual roton-like dispersion. Exciton polarons were recently evoked to explain the excitonic spectra of doped monolayer transition metal dichalcogenides (TMDs), but these studies are limited to the ground state. Excited-state exciton polarons can exhibit richer many-body physics due to their larger spatial extent, but detection is challenging due to their inherently weak signals. Here we observe gate-tunable exciton polarons for the 1s - 3s excitonic Rydberg series in ultraclean monolayer MoSe$_2$ devices by optical spectroscopy. When the FS expands, we observe increasingly severe suppression and steep energy shift from low to high Rydberg states. Their gate-dependent energy shifts go beyond the trion description but match our exciton-polaron theory. Notably, the exciton-polaron absorption and emission bands are separated with an energy gap, which increases from ground to excited state. Such peculiar characteristics are attributed to the roton-like exciton-polaron dispersion, where energy minima occur at finite momenta. The roton effect increases from ground to excited state. Such exciton-polaron Rydberg series with progressively significant many-body and roton effect shall provide a new platform to explore complex many-body phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Landau-quantized excitonic absorption and luminescence in a monolayer valley semiconductor

We investigate Landau-quantized excitonic absorption and luminescence of monolayer WSe$_2$ under magnetic field. We observe gate-dependent quantum oscillations in the bright exciton and trions (or exciton-polarons) as well as the dark trions and their phonon replicas. Our results reveal spin- and valley-polarized Landau levels (LLs) with filling factors $n = +0, +1$ in the bottom conduction band and $n = -0$ to $-6$ in the top valence band, including the Berry-curvature-induced $n = \pm0$ LLs of massive Dirac fermions. The LL filling produces periodic plateaus in the exciton energy shift accompanied by sharp oscillations in the exciton absorption width and magnitude. This peculiar exciton behavior can be simulated by semi-empirical calculations. The experimentally deduced g-factors of the conduction band (g ~ 2.5) and valence band (g ~ 15) exceed those predicted in a single-particle model (g = 1.5, 5.5, respectively). Such g-factor enhancement implies strong many-body interactions in gated monolayer WSe$_2$. The complex interplay between Landau quantization, excitonic effects, and many-body interactions makes monolayer WSe$_2$ a promising platform to explore novel correlated quantum phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Multipath optical recombination of intervalley dark excitons and trions in monolayer WSe$_2$

Excitons and trions (or exciton-polarons) in transition metal dichalcogenides (TMDs) are known to decay predominantly through intravalley transitions. Electron-hole recombination across different valleys can also play a significant role in the excitonic dynamics, but intervalley transitions are rarely observed in monolayer TMDs, because they violate the conservation of momentum. Here we reveal the intervalley recombination of dark excitons and trions through more than one path in monolayer WSe$_2$. We observe the intervalley dark excitons, which can recombine by the assistance of defect scattering or chiral-phonon emission. We also reveal that a trion can decay in two distinct paths - through intravalley or intervalley electron-hole recombination - into two different final valley states. Although these two paths are energy degenerate, we can distinguish them by lifting the valley degeneracy under a magnetic field. In addition, the intra- and inter-valley trion transitions are coupled to zone-center and zone-corner chiral phonons, respectively, to produce distinct phonon replicas. The observed multipath optical decays of dark excitons and trions provide much insight into the internal quantum structure of trions and the complex excitonic interactions with defects and chiral phonons in monolayer valley semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Full consideration of acoustic phonon scatterings in two-dimensional Dirac materials

The in-plane acoustic phonon scattering in graphene is solved by considering fully inelastic acoustic phonon scatterings in two-dimensional (2D) Dirac materials for large range of temperature ($T$) and chemical potential ($μ$). Rigorous analytical solutions and symmetry properties of Fermionic and Bosonic functions are obtained. We illustrate how doping alters the temperature dependence of acoustic phonon scattering rates. It is shown that the quasi-elastic and ansatz equations previously derived for acoustic phonon scatterings in graphene are limiting cases of the inelastic-scattering equations derived here. For heavily-doped graphene, we found that the high-$T$ behavior of resistivity is better described by $ρ(T, μ) \propto T(1 - ζ_aμ^2/3(k_BT)^2)$ rather than a linear $T$ behavior, and in the low $T$ regime we found $τ^{-1} \propto (k_BT)^4$ but with a different prefactor (i.e. $\sim$ 3 times smaller) in comparison with the existing quasi-elastic expressions. Furthermore, we found a simple analytic "semi-inelastic" expression of the form $τ^{-1} \propto (k_BT)^4/(1+ c T^3)$ which matches nearly perfectly with the full inelastic results for any temperature up to 500 K and $μ$ up to 1 eV. Our simple analytic results agree well with previous first-principles studies and available experimental data. Moreover, we obtain an analytical form for the acoustic gauge field $β_A = 3βγ_0/4\sqrt{2}$. Our analyses pave a way for investigating scatterings between electrons and other fundamental excitations with linear dispersion relation in 2D Dirac material-based heterostructures such as bogolon-mediated electron scattering in graphene-based hybrid Bose-Fermi systems.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermal rectification properties of multiple-quantum-dot junctions

It is illustrated that semiconductor quantum dots (QDs) embedded into an insulating matrix connected with metallic electrodes and some vacuum space can lead to significant thermal rectification effect. A multilevel Anderson model is used to investigate the thermal rectification properties of the multiple-QD junction. The charge and heat currents in the tunneling process are calculated via the Keldysh Green's function technique. We show that pronounced thermal rectification and negative differential thermal conductance (NDTC) behaviors can be observed for the multiple-QD junction with asymmetrical tunneling rates and strong interdot Coulomb interactions.

0 citations0 reviewsNo code linkedOpen access