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David M T Kuo

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preprint2020arXiv

Thermoelectric and electron heat rectification properties of quantum dot superlattice nanowire arrays

Heat engines made of quantum-dot (QD) superlattice nanowires (SLNWs) offer promising applications in energy harvesting due to the reduction of phonon thermal conductivity. In solid state electrical generators (refrigerators), one needs to generate (remove) large amount of charge current (heat current). Consequently, a high QD SLNW density is required for realistic applications. This study theoretically investigated the properties of power factor and electron heat rectification for an SLNW array under the transition from a one dimensional system to a two dimensional system. The SLNW arrays show the functionality of heat diodes, which is mainly attributed to a transmission coefficient with a temperature-bias direction dependent characteristic.

preprint2020arXiv

Thermoelectric properties of finite two-dimensional quantum dot arrays with band-like electronic states

The thermal power ($PF=S^2G_e$) depends on the Seebeck coefficient ($S$) and electron conductance ($G_e$). The enhancement of $G_e$ will unavoidably suppress $S$ because they are closely related. As a consequence, the optimization of $PF$ is extremely difficult. Here, we theoretically investigated the thermoelectric properties of two-dimensional quantum dot (QD) arrays with carriers injected from electrodes. The Lorenz number of 2D QD arrays in the resonant tunneling procedure satisfies the Wiedemann-Franz law, which confirms the formation of minibands. When the miniband center is far away from the Fermi level of the electrodes, the electron transport is in the thermionic-assisted tunneling procedure (TATP). In this regime, $G_e$ in band-like situation and $S$ in atom-like situation can happen simultaneously. We have demonstrated that the enhancement of $G_e$ with an increasing number of electronic states will not suppress $S$ in the TATP.

preprint2016arXiv

A heat engine made of quantum dot molecules with high figure of merits

The transport of electrons through serially coupled quantum dot molecules (SCQDM) is investigated theoretically for application as an energy harvesting engine (EHE), which converts thermal heat to electrical power. We demonstrate that the charge current driven by a temperature bias shows bipolar oscillatory behavior with respect to gate voltage due to the unbalance between electrons and holes, which is different from the charge current driven by an applied bias. In addition, we reveal a Lenz's law between the charge current and the thermal induced voltage. The efficiency of EHE is higher for SCQDM in the orbital depletion situation rather than the orbital filling situation, owing to the many-body effect. The EHE efficiency is enhanced with increasing temperature bias, but suppressed as the electron hopping strength reduces. The fluctuation of QD energy levels at different sites also leads to a reduction of EHE efficiency. Finally, we demonstrate direction-dependent charge currents driven by the temperature bias for application as a novel charge diode.

preprint2016arXiv

Thermoelectric efficiency of quantum dot molecules at a high temperature bias: the role of thermal-induced voltage

The nonlinear electron and heat currents of quantum dot molecules (QDMs) under a temperature bias are theoretically investigated, including all correlation functions arising from electron Coulomb interactions in QDMs. Unlike the case of double QDs, the maximum efficiency of serially coupled triple QDs (SCTQD) occurs in the orbital depletion regime owing to the interdot Coulomb blockade. The electron current in SCTQD shows a bipolar oscillatory behavior with respect to the variation of QD energy levels, whereas the heat current does not show such a behavior. This is mainly attributed to thermal-induced bias. In addition, we illustrate how the efficiency of SCTQD is influenced by the external load resistance, and phonon heat flow. Finally, a direction-dependent electron current driven by a temperature bias has been demonstrated for a SCTQD with staircase-like energy levels.

preprint2015arXiv

Quantum interference and electron correlation in charge transport through triangular quantum dot molecules

We study the charge transport properties of triangular quantum dot molecule (TQDM) connected to metallic electrodes, taking into account all correlation functions and relevant charging states. The quantum interference (QI) effect of TQDM resulting from electron coherent tunneling between quantum dots is revealed and well interpreted by the long distance coherent tunneling mechanism. The spectra of electrical conductance of TQDM with charge filling from one to six electrons clearly depict the many-body and topological effects. The calculated charge stability diagram for conductance and total occupation numbers match well with the recent experimental measurements. We also demonstrate that the destructive QI effect on the tunneling current of TQDM is robust with respect to temperature variation, making the single electron QI transistor feasible at higher temperatures.

preprint2015arXiv

Quantum interference and structure-dependent orbital-filling effects on the thermoelectric properties of quantum dot molecules

The quantum interference and orbital filling effects on the thermoelectric (TE) properties of quantum dot molecules with high figure of merit are illustrated via the full solution to the Hubbard- Anderson model in the Coulomb blockade regime. It is found that under certain condition in the triangular QD molecule (TQDM), destructive quantum interference (QI) can occur, which leads to vanishing small electrical conductance, while the Seebeck coefficient is modified dramatically. When TQDM is in the charge localization state due to QI, the Seebeck coefficient is seriously suppressed at low temperature, but highly enhanced at high temperature. Meanwhile, the behavior of Lorenz number reveals that it is easier to block charge transport via destructive QI than the electron heat transport at high temperatures. The maximum power factor (PF) in TQDM occurs at full-filling condition. Nevertheless, low-filling condition is preferred for getting maximum PF in serially coupled triple QDs in general. In double QDs, the maximum PF can be achieved either with orbital-depletion or orbital-filling as a result of electron-hole symmetry. Our theoretical work provides a useful guideline for advancing the nanoscale TE technology.

preprint2014arXiv

Long distance coherent tunneling effect on the charge and heat currents in serially coupled triple quantum dots

The effect of long distance coherent tunneling (LDCT) on the charge and heat currents in serially coupled triple quantum dots (TQDs) connected to electrodes is illustrated by using a combination of the extended Hurbbard model and Anderson model. The charge and heat currents are calculated with a closed-form Landauer expression for the transmission coefficient suitable for the Coulomb blockade regime. The physical parameters including bias-dependent quantum dot energy levels, electron Coulomb interactions, and electron hopping strengths are calculated in the framework of effective mass theory for semiconductor TQDs. We demonstrate that the effect of LDCT on the charge and heat currents can be robust. In addition, it is shown that prominent heat rectification behavior can exist in the TQD system with asymmetrical energy levels.

preprint2013arXiv

Heat rectification effect of serially coupled quantum dots

The nonlinear thermoelectric properties of serially coupled quantum dots (SCQDs) embedded in a nanowire connected to metallic electrodes are theoretically studied in the Coulomb blockade regime. We demonstrate that the electron heat current of SCQDs exhibit a direction-dependent behavior (heat rectification) in an asymmetrical structure in which the electron Coulomb interactions are significant. The phonon thermal conductivity of the nanowire is also calculated, which is used to estimate the phonon heat current. Finally, we discuss how to reduce phonon heat current to allow observation of electron heat rectification behavior in the SCQD junction system in low temperature regime ($\approx 3 K$).

preprint2010arXiv

Thermal rectification effects of multiple semiconductor quantum dot junctions

Based on the multiple energy level Anderson model, this study theoretically examines the thermoelectric effects of semiconductor quantum dots (QDs) in the nonlinear response regime. The charge and heat currents in the sequential tunneling process are calculated by using the Keldysh Green's function technique. Results show that the thermal rectification effect can be observed in a multiple QD junction system, whereas the tunneling rate, size fluctuation, and location distribution of QD significantly influence the rectification efficiency.