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David M. -T. Kuo

David M. -T. Kuo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

10 published item(s)

preprint2015arXiv

Thermoelectric effects of quantum dot arrays embedded in nanowires

The thermoelectric properties of quantum dot arrays (QDAs) embedded in nanowires connected to electrodes are studied theoretically in the Coulomb blockade regime. A Hurbbard-Anderson model is used to simulate the electronic contribution to thermoelectric proper- ties of a QDA junction system. The electrical conductance, Seebeck coefficient, and electron thermal conductance are calculated by both the Keldysh Green function method and the mean-field approach. The phonon thermal conductivities are calculated by using the equation of phonon radiative transfer method. In the Coulomb blockade regime the electron thermal conductance is much smaller than the phonon thermal conductance. Therefore, the optimal figure of merit (ZT) can be enhanced by increasing thermal power and decreasing phonon thermal conductance simultaneously. We found that it is possible to obtain ZT value of InGaAs/GaAs QDAs embedded in nanowires larger than one at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermoelectric Properties of a Semiconductor Quantum Dot Chain Connected to Metallic Electrodes

The thermoelectric properties of a semiconduct quantum dot chain (SQDC) connected to metallic electrodes are theoretically investigated in the Coulomb blockade regime. An extended Hubbard model is employed to simulate the SQDC system consisted of {\color{blue}N=2,3,4, and 5} quantum dots (QDs). The charge and heat currents are calculated in the framework of Keldysh Green's function technique. We obtained a closed-form Landauer expression for the transmission coefficient of the SQDC system with arbitrary number of QDs by using the method beyond mean-field theory. The electrical conductance ($G_e$), Seebeck coefficient (S), thermal conductance, and figure of merit (ZT) are numerically calculated and analyzed in the linear response regime. When thermal conductance is dominated by phonon carriers, the optimization of ZT is determined by the power factor ($pF=S^2G_e$). We find that the optimization of ZT value favors the following conditions:(1) QDs with low energy level fluctuations, (2) QD energy levels lie above the Fermi level of electrodes, (3) $Γ< t_c \ll U_0$, where $t_c$, $U_0$, and $Γ$ are electron interdot hopping strength, on-site electron Coulomb interaction, and tunneling rate, respectively, and (4) $Γ_L=Γ_R$ with $Γ_L+Γ_R$ kept constant, where $Γ_L (Γ_R)$ is the left (right) tunneling rate. It is predicted that high ZT values can be achieved by tailoring above conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tunneling Current Spectra of a Metal Core/Semiconductor Shell Quantum Dot Molecule

The transport properties of a metal core/semiconductor shell quantum dot molecule (QDM) embedded in a matrix connected to metallic electrodes are theoretically studied in the framework of Keldysh Green function technique. The effects of the electron plasmon interactions (EPIs) on the tunneling current spectra of QDM are examined. The energy levels of the QDs, intradot and interdot Coulomb interactions, electron interdot hopping strengths, and tunneling rates of QDs are renormalized by the EPIs. The differential conductance spectra show peaks arising from the plasmon assisted tunneling process, intradot and interdot Coulomb interactions, and coherent tunneling between the QDs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Bistability in the Tunnelling Current through a Ring of $N$ Coupled Quantum Dots

We study bistability in the electron transport through a ring of N coupled quantum dots with two orbitals in each dot. One orbital is localized (called b orbital) and coupling of the b orbitals in any two dots is negligible; the other is delocalized in the plane of the ring (called d orbital), due to coupling of the d orbitals in the neighboring dots, as described by a tight-binding model. The d orbitals thereby form a band with finite width. The b and d orbitals are connected to the source and drain electrodes with a voltage bias V, allowing the electron tunnelling. Tunnelling current is calculated by using a nonequilibrium Green function method recently developed to treat nanostructures with multiple energy levels. We find a bistable effect in the tunnelling current as a function of bias V, when the size N>50; this effect scales with the size N and becomes sizable at N~100. The temperature effect on bistability is also discussed. In comparison, mean-field treatment tends to overestimate the bistable effect.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effects of interdot hopping and Coulomb blockade on the thermoelectric properties of serially coupled quantum dots

We have theoretically studied the thermoelectric properties of serially coupled quantum dots (SCQD) embedded in an insulator matrix connected to metallic electrodes. In the framework of Keldysh Green's function technique, the Landauer formula of transmission factor is obtained by using the equation of motion method. Based on such analytical expressions of charge and heat currents, we calculate the electrical conductance, Seebeck coefficient, electron thermal conductance and figure of merit (ZT) of SCQD in the linear response regime. The effects of electron Coulomb interactions on the reduction and enhancement of ZT are analyzed. We demonstrate that ZT is not a monotonic increasing function of interdot electron hopping strength ($t_c$). We also show that in the absence of phonon thermal conductance, SCQD can reach the Carnot efficiency as $t_c$ approaches zero.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Bipolar thermoelectric effect in a srially coupled quantum dot system

The Seebeck coefficient (S) of a serially coupled quantum dot (SCQD) junction system is theoretically studied via a two-level Anderson model. A change of sign in S with respect to temperature is found, which arises from the competition between tunneling currents due to electrons and holes (i.e, bipolar tunneling effect). The change of sign in S implies that one can vary the equilibrium temperature to produce thermoelectric current in either the forward or reverse direction, leading to a bipolar thermoelectric effect. For the case of two parallel SCQDs, we also observe the oscillatory behavior of S with respect to temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Theory of spin blockade, charge ratchet effect, and thermoelectrical behavior in serially coupled quantum-dot system

The charge transport of a serially coupled quantum dots (SCQD) connected to the metallic electrodes is theoretically investigated in the Coulomb blockade regime. A closed-form expression for the tunneling current of SCQD in the {\color{red} weak interdot hopping} limit is obtained by solving an extended two-site Hubbard model via the Green's function method. We use this expression to investigate spin current rectification, negative differential conductance, and coherent tunneling in the nonlinear response regime. The current rectification arising from the space symmetry breaking of SCQD is suppressed by increasing temperature. The calculation of SCQD is extended to the case of multiple parallel SCQDs for studying the charge ratchet effect and SCQD with multiple levels. In the linear response regime, the functionalities of spin filter and low-temperature current filter are demonstrated to coexist in this system. It is further demonstrated that two-electron spin singlet and triplet states can be readily resolved from the measurement of Seebeck coefficient rather than that of electrical conductance.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermal rectification properties of multiple-quantum-dot junctions

It is illustrated that semiconductor quantum dots (QDs) embedded into an insulating matrix connected with metallic electrodes and some vacuum space can lead to significant thermal rectification effect. A multilevel Anderson model is used to investigate the thermal rectification properties of the multiple-QD junction. The charge and heat currents in the tunneling process are calculated via the Keldysh Green's function technique. We show that pronounced thermal rectification and negative differential thermal conductance (NDTC) behaviors can be observed for the multiple-QD junction with asymmetrical tunneling rates and strong interdot Coulomb interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermoelectric and thermal rectification properties of quantum dot junctions

The electrical conductance, thermal conductance, thermal power and figure of merit (ZT) of semiconductor quantum dots (QDs) embedded into an insulator matrix connected with metallic electrodes are theoretically investigated in the Coulomb blockade regime. The multilevel Anderson model is used to simulate the multiple QDs junction system. The charge and heat currents in the sequential tunneling process are calculated by the Keldysh Green function technique. In the linear response regime the ZT values are still very impressive in the small tunneling rates case, although the effect of electron Coulomb interaction on ZT is significant. In the nonlinear response regime, we have demonstrated that the thermal rectification behavior can be observed for the coupled QDs system, where the very strong asymmetrical coupling between the dots and electrodes, large energy level separation between dots and strong interdot Coulomb interactions are required.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Bistable states of quantum dot array junctions for high-density memory

We demonstrate that two-dimensional (2D) arrays of coupled quantum dots (QDs) with six-fold degenerate p orbitals can display bistable states, suitable for application in high-density memory device with low power consumption. Due to the inter-dot coupling of $p_x$ and $p_y$ orbitals in these QD arrays, two dimensional conduction bands can be formed in the x-y plane, while the $p_z$ orbitals remain localized in the x-y plane such that the inter-dot coupling between them can be neglected. We model such systems by taking into account the on-site repulsive interactions between electrons in $p_z$ orbitals and the coupling of the localized $p_z$ orbitals with the 2D conduction bands formed by $p_x$ and $p_y$ orbitals. The Green's function method within an extended Anderson model is used to calculate the tunneling current through the QDs. We find that bistable tunneling current can exist for such systems due to the interplay of the on-site Coulomb interactions (U) between the $p_z$ orbitals and the delocalized nature of conduction band states derived from the hybridization of $p_x$ / $p_y$ orbitals. This bistable current is not sensitive to the detailed band structure of the two dimensional band, but depends critically on the strength of $U$ and the ratio of the left and right tunneling rates. The behavior of the electrical bistability can be sustained when the 2D QD array reduces to a one-dimensional QD array, indicating the feasibility for high-density packing of these bistable nanoscale structures.

0 citations0 reviewsNo code linkedOpen access