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Yasuo Arai

Yasuo Arai appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.ins-detastro-ph.IMhep-exastro-ph.HEhep-phphysics.acc-ph

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Published work

21 published item(s)

preprint2023arXiv

The International Linear Collider: Report to Snowmass 2021

The International Linear Collider (ILC) is on the table now as a new global energy-frontier accelerator laboratory taking data in the 2030s. The ILC addresses key questions for our current understanding of particle physics. It is based on a proven accelerator technology. Its experiments will challenge the Standard Model of particle physics and will provide a new window to look beyond it. This document brings the story of the ILC up to date, emphasizing its strong physics motivation, its readiness for construction, and the opportunity it presents to the US and the global particle physics community.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Proton radiation damage tolerance of wide dynamic range SOI pixel detectors

We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixel circuits utilizing Silicon-On-Insulator (SOI) technology. We have considered the possibility of using INTPIX to observe X-ray polarization in space. When the semiconductor detector is used in space, it is subject to radiation damage resulting from high-energy protons. Therefore, it is necessary to investigate whether INTPIX has high radiation tolerance for use in space. The INTPIX8 was irradiated with 6 MeV protons up to a total dose of 2 krad at HIMAC, National Institute of Quantum Science in Japan, and evaluated the degradation of the performance, such as energy resolution and non-uniformity of gain and readout noise between pixels. After 500 rad irradiation, which is the typical lifetime of an X-ray astronomy satellite, the degradation of energy resolution at 14.4 keV is less than 10%, and the non-uniformity of readout noise and gain between pixels is constant within 0.1%.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Improvement of Spectroscopic Performance using a Charge-sensitive Amplifier Circuit for an X-Ray Astronomical SOI Pixel Detector

We have been developing monolithic active pixel sensors series, named "XRPIX," based on the silicon-on-insulator (SOI) pixel technology, for future X-ray astronomical satellites. The XRPIX series offers high coincidence time resolution ({\rm \sim}1 {\rm μ}s), superior readout time ({\rm \sim}10 {\rm μ}s), and a wide energy range (0.5--40 keV). In the previous study, we successfully demonstrated X-ray detection by event-driven readout of XRPIX2b. We here report recent improvements in spectroscopic performance. We successfully increased the gain and reduced the readout noise in XRPIX2b by decreasing the parasitic capacitance of the sense-node originated in the buried p-well (BPW). On the other hand, we found significant tail structures in the spectral response due to the loss of the charge collection efficiency when a small BPW is employed. Thus, we increased the gain in XRPIX3b by introducing in-pixel charge sensitive amplifiers instead of having even smaller BPW. We finally achieved the readout noise of 35 e{\rm ^{-}} (rms) and the energy resolution of 320 eV (FWHM) at 6 keV without significant loss of the charge collection efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

X-ray Performance of Back-Side Illuminated Type of Kyoto's X-ray Astronomical SOI Pixel Sensor, XRPIX

We have been developing X-ray SOI pixel Sensors, called "XRPIX", for future X-ray astronomy satellites that enable us to observe in the wide energy band of 0.5-40 keV. Since XRPIXs have the circuitry layer with a thickness of about 8 μm in the front side of the sensor, it is impossible to detect low energy X-rays with a front-illuminated type. So, we have been developing back-illuminated type of XRPIX with a less 1 μm dead layer in the back-side, which enables the sensitivity to reach 0.5 keV. We produced two types of back-side illuminated (BI) XRPIXs, one of which is produced in "Pizza process" which LBNL developed and the other is processed in the ion implantation and laser annealing. We irradiated both of the BI-XRPIXs with soft X-ray and investigate soft X-ray performance of them. We report results from soft X-ray evaluation test of the device.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A SOI-Based Low Noise and Wide Dynamic Range Event-Driven Detector for X-Ray Imaging

A low noise and wide dynamic range event driven detector for the detection of X-Ray energy is realized using 0.2 [um] Silicon on insulator (SOI) technology. Pixel circuits are divided into two parts; signal sensing circuit and event detection circuit. Event detection circuit is activated when X-Ray energy falls into the detector. In-pixel gain selection is implemented for the detection of a small signal and wide band of energy particle. Adaptive gain and capability of correlated double sampling (CDS) technique for the kTC noise canceling of charge detector realizes the low noise and high dynamic range event driven detector.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A study on the shielding mechanisms of SOI pixel detector

In order to tackle the charge injection issue that had perplexed the counting type SOI pixel for years, two successive chips CPIXTEG3 and CPIXTEG3b were developed utilizing two shielding mechanisms, Nested-well and Double-SOI, in the LAPIS process. A TCAD simulation showed the shielding effectiveness influenced by the high sheet resistance of shielding layers. Test structures specially designed to measure the crosstalk associated to charge injection were implemented in CPIXTEG3/3b. Measurement results proved that using shielding layer is indispensable for counting type pixel and Double-SOI is superior to Nested-well in terms of shielding effectiveness and design flexibility.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor

We are developing monolithic pixel sensors based on a 0.2 $μ$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard radiation environments in HEP experiments. To compensate for TID damage, we have introduced a Double SOI structure which has a Middle Silicon layer (SOI2 layer) in addition. We studied the recovery from TID damage induced by $\mathrm{^{60}Co}~γ$'s and other characteristics of an Integration-type Double SOI sensor. The Double SOI sensor irradiated to 100 kGy showed a response for IR laser similar to of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. We conclude that the Double SOI sensor is radiation hard enough to be used in HEP experiments in harsh radiation environments such as at Bell II or ILC.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Compensation for TID Damage in SOI Pixel Devices

We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizing dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath the BOX (Buried OXide) layer - in order to compensate for the TID effect by applying a negative voltage to this electrode to cancel the effect caused by accumulated positive holes. In this paper, the TID effects caused by Co gamma-ray irradiation are presented based on the transistor characteristics measurements. The irradiation was carried out in various biasing conditions to investigate hole accumulation dependence on the potential configurations. We also compare the data with samples irradiated with X-ray. Since we observed a fair agreement between the two irradiation datasets, the TID effects have been investigated in a wide dose range from 100~Gy to 2~MGy.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Compensation of radiation damages for SOI pixel detector via tunneling

We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionizing dose (TID) for transistors which are enclosed in oxide layer.The holes which are generated and trapped in the oxide layers after irradiation affect characteristics of near-by transistors due to its positive electric field.Annealing and radiation of ultraviolet are not realistic to remove trapped holes for a fabricated detector due to thermal resistance of components and difficulty of handling. We studied compensation of TID effects by tunneling using a high-voltage. For decrease of trapped holes, applied high-voltage to buried p-well which is under oxide layer to inject the electrons into the oxide layer.In this report, recent progress of this study is shown.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

DAQ Development for Silicon-On-Insulator Pixel detectors

We are developing DAQ for Si-pixel detectors by using a Slicon-On-Insulator (SOI) technology. This DAQ consists of firmware works on SEABAS (Soi EvAluation BoArd with Sitcp) DAQ board and software works on PC. We have been working on the development of firmware/software. Now we accomplished to speed up the readout (~90Hz) and to add a function for frame rate control. This is the report of our development work for the High Speed DAQ system.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors

We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(C$ν$B). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ consists of Nb/Al/Al${}_{\mathrm{x}}$O${}_{\mathrm{y}}$/Al/Nb layers and their thicknesses are optimized for the operation temperature at 370 mK cooled by a ${}^{3}$He sorption refrigerator. Our STJs achieved the leak current 250 pA and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio(S/N). FD-SOI MOSFETs can be operated at cryogenic temperature of 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a non linear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors are 0.4 mV and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp required to have a fast response(GBW$\geq$100 MHz) and it must have low power dissipation as compared to the cooling power of refrigerator.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Development of the Pixelated Photon Detector Using Silicon on Insulator Technology for TOF-PET

To measure light emission pattern in scintillator, higher sensitivity and faster response are required to photo detector. Such as single photon avalanche diode (SPAD), conventional pixelated photo detector is operated at Geiger avalanche multiplication. However higher gain of SPAD seems very attractive, photon detection efficiency per unit area is low. This weak point is mainly caused by Geiger avalanche mechanism. To overcome these difficulties, we designed Pixelated Linear Avalanche Integration Detector using Silicon on Insulator technology (SOI-Plaid). To avoid dark count noise and dead time comes from quench circuit, we are planning to use APD in linear multiplication mode. SOI technology enables laminating readout circuit and APD layer, and high-speed and low-noise signal reading regardless smaller gain of linear APD. This study shows design of linear APD by using SOI fabrication process. We designed test element group (TEG) of linear APD and inspected optimal structure of linear APD.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Exploring properties of the integrating pixels

This paper presents some observations and ideas collected during the tests of the SOI sensors, based on the integration type pixels. First, it contains a rough analysis of the Correlated Double Sampling filtering properties with respect to different noise sources and long sampling intervals, which are typical for the pixels under consideration. Second, results of the pixel leakage current measurements in the pix_2012 and DIPIX pixel detector chips are presented.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Improving Charge-Collection Efficiency of Kyoto's SOI Pixel Sensors

We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~μ$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence systems. Their performance in imaging spectroscopy is comparable to that in the CCDs. A problem in our previous model was degradation of charge-collection efficiency (CCE) at pixel borders. We measured the response in the sub-pixel scale, using finely collimated X-ray beams at $10~μ$mΦ$ at SPring-8, and investigated the non-uniformity of the CCE within a pixel. We found that the X-ray detection efficiency and CCE degrade in the sensor region under the pixel circuitry placed outside the buried p-wells (BPW). A 2D simulation of the electric fields shows that the isolated pixel-circuitry outside the BPW creates local minimums in the electric potentials at the interface between the sensor and buried oxide layers. Thus, a part of signal charge is trapped there and is not collected to the BPW. Based on this result, we modified the placement of the in-pixel circuitry so that the electric fields would converge toward the BPW. We confirmed that the CCE at pixel borders is successfully improved with the updated model.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Investigation of the Kyoto's X-ray Astronomical SOIPIXs with Double-SOI Wafer for Reduction of Cross-talks

We have been developing X-ray SOIPIXs, "XRPIX", for future X-ray astronomy satellites. XRPIX is equipped with a function of "event-driven readout", which allows us to readout signal hit pixels only and realizes a high time resolution ($\sim10μ{\rm s}$). The current version of XRPIX suffers a problem that the readout noise in the event-driven readout mode is higher than that in the the frame readout mode, in which all the pixels are read out serially. Previous studies have clarified that the problem is caused by the cross-talks between buried P-wells (BPW) in the sensor layer and in-pixel circuits in the circuit layer. Thus, we developed new XRPIX having a Double SOI wafer (DSOI), which has an additional silicon layer (middle silicon) working as an electrical shield between the BPW and the in-pixel circuits. After adjusting the voltage applied to the middle silicon, we confirmed the reduction of the cross-talk by observing the analog waveform of the pixel circuit. We also successfully detected $^{241}$Am X-rays with XRPIX.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

SOI pixel circuits with synchronized TMC for time-of-flight stigmatic imaging mass spectrometry

We propose SOI pixel circuits with a synchronized time memory cell (TMC) for time-of-flight stigmatic imaging mass spectrometry. The circuits simultaneously detect the position and the fine/coarse flight time of an ion for the MALDI-ToF mass spectrometer. We discuss the circuit design and present the simulation results of a prototype detector comprised of a 32 x 32 pixel array in which each pixel pitch is 40 um and the time resolution is a minimum of 1 ns. The results of transient analysis demonstrate the fully correct synchronous operation at a 100-MHz clock frequency and simultaneous 32-word SRAM writing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

SOI Pixel Sensor for Gamma-Ray Imaging

SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor has also been developed for the application of X-ray astronomy with the purpose of reducing the noise using anti-coincidence event. This trigger mode SOI pixel sensor working with in the rate of kilo Hz is also a promising scatter detector for advanced Compton imaging to track the Compton recoiled electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices

We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the application of DSOI to counting-type sensors. The cross-talk suppression in DSOI is being evaluated. These results encourage us that DSOI sensors are applicable to future high-energy experiments such as the BELLE-II experiment or the ILC experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement

X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the radiation induced gate channel modulation by the generated positive charge in sidewall spacer. It is confirmed that the p-MOSFET drain current change is improved by higher PLDD dose. Thinner BOX is also proposed for further radiation hardness improvement.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor

We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K$α$ and K$β$. Moreover, we produced a fully depleted layer with a thickness of $500~{\rm μm}$. The event-driven readout mode has already been successfully demonstrated.

0 citations0 reviewsNo code linkedOpen access