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TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices

We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the application of DSOI to counting-type sensors. The cross-talk suppression in DSOI is being evaluated. These results encourage us that DSOI sensors are applicable to future high-energy experiments such as the BELLE-II experiment or the ILC experiment.

preprint2015arXivOpen access
Shunsuke HondaKazuhiko HaraDaisuke SekigawaBipin SubediMari AsanoNaoshi TobitaWataru AoyagiYasuo AraiAkimasa IshikawaYoshimasa OnoItaru UshikiSOI Collaboration
physics.ins-det
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Open access12 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
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Shunsuke HondaKazuhiko HaraDaisuke SekigawaBipin SubediMari AsanoNaoshi TobitaWataru AoyagiYasuo AraiAkimasa IshikawaYoshimasa OnoItaru UshikiSOI Collaboration

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