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Researcher profile

Ayaki Takeda

Ayaki Takeda contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
astro-ph.IMphysics.ins-det

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Published work

3 published item(s)

preprint2022arXiv

Precision beam telescope based on SOI pixel sensor technology for electrons in the energy range of sub-GeV to GeV

We developed a beam telescope system comprising five layers of 300-$μ$m-thick INTPIX4NA monolithic pixel sensors with each pixel size of 17 $μ$m square. The sensors were fabricated using silicon-on-insulator (SOI) technology. The signal-to-noise ratio of 140--230 is realized at a bias voltage of 20~V. The tracker system was tested using a positron beam of 200--822 MeV/c, and various tracking methods are examined to optimize spatial precision achievable at these energies. The best tracking precision including the precision of the sensor under test itself is 11.04 $\pm$ 0.10 $μ$m for 822-MeV/c positrons for an equidistant sensor spacing of 32 mm. The achieved precision results combined with the intrinsic spatial resolution value obtained for a similar system using 120 GeV protons are used to estimate the tracking performance of electrons in the GeV energy range; a tracking precision of 2.22 $μ$m is evaluated for 5-GeV electrons. The method to estimate the tracking performance is verified using a Geant4-based simulation. The developed high precision tracker system enables to map the detailed performance of the sensors with pixel sizes of $\mathcal{O}$(10 $μ$m), therefore will be a powerful system for development of devices targeting precision position resolutions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Development of the detector simulation framework for the Wideband Hybrid X-ray Imager onboard FORCE

FORCE is a Japan-US space-based astronomy mission for an X-ray imaging spectroscopy in an energy range of 1--80 keV. The Wideband Hybrid X-ray Imager (WHXI), which is the main focal plane detector, will use a hybrid semiconductor imager stack composed of silicon and cadmium telluride (CdTe). The silicon imager will be a certain type of the silicon-on-insulator (SOI) pixel sensor, named the X-ray pixel (XRPIX) series. Since the sensor has a small pixel size (30--36 $μ$m) and a thick sensitive region (300--500 $μ$m), understanding the detector response is not trivial and is important in order to optimize the camera design and to evaluate the scientific capabilities. We have developed a framework to simulate observations of celestial sources with semiconductor sensors. Our simulation framework was tested and validated by comparing our simulation results to laboratory measurements using the XRPIX 6H sensor. The simulator well reproduced the measurement results with reasonable physical parameters of the sensor including an electric field structure, a Coulomb repulsion effect on the carrier diffusion, and arrangement of the degraded regions. This framework is also applicable to future XRPIX updates including the one which will be part of the WHXI, as well as various types of semiconductor sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.

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