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Researcher profile

Xiaoming Xie

Xiaoming Xie contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.mtrl-sciphysics.ins-detphysics.opticscond-mat.mes-hallcond-mat.str-el

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Published work

18 published item(s)

preprint2019arXiv

Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi2O2Se films on SrTiO3 (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm2/V-1s-1 at room temperature in a 70nm-thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A combined method for synthesis of superconducting Cu doped Bi2Se3

We present a two-step technique for the synthesis of superconducting CuxBi2Se3. Cu0.15Bi2Se3 single crystals were synthesized using the melt-growth method. Although these samples are non-superconducting, they can be employed to generate high quality superconducting samples if used as precursors in the following electrochemical synthesis step. Samples made from Cu0.15Bi2Se3 reliably exhibit zero-resistance even under the non-optimal quenching condition, while samples made from pristine Bi2Se3 require fine tuning of the quenching conditions to achieve similar performance. Moreover, under the optimal quenching condition, the average superconducting shielding fraction was still lower in the samples made from pristine Bi2Se3 than in the samples made from Cu0.15Bi2Se3. These results suggest that the pre-doped Cu atoms facilitate the formation of a superconducting percolation network. We also discuss the useful clues that we gathered about the locations of Cu dopants that are responsible for superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Superconducting nanowire single photon detector at 532 nm and demonstration in satellite laser ranging

Superconducting nanowire single-photon detectors (SNSPDs) at a wavelength of 532 nm were designed and fabricated aiming to satellite laser ranging (SLR) applications. The NbN SNSPDs were fabricated on one-dimensional photonic crystals with a sensitive-area diameter of 42 um. The devices were coupled with multimode fiber (phi=50um) and exhibited a maximum system detection efficiency of 75% at an extremely low dark count rate of <0.1 Hz. An SLR experiment using an SNSPD at a wavelength of 532 nm was successfully demonstrated. The results showed a depth ranging with a precision of ~8.0 mm for the target satellite LARES, which is ~3,000 km away from the ground ranging station at the Sheshan Observatory.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Dark counts of superconducting nanowire single-photon detector under illumination

An abnormal increase in the SDE was observed for superconducting nanowire single-photon detectors (SNSPDs) when the bias current (Ib) was close to the switching current (Isw). By introducing the time-correlated single-photon counting technique, we investigated the temporal histogram of the detection counts of an SNSPD under illumination. The temporal information helps us to distinguish photon counts from dark counts in the time domain. In this manner, the dark count rate (DCR) under illumination and the accurate SDE can be determined. The DCR under moderate illumination may be significantly larger than the conventional DCR measured without illumination under a high Ib, which causes the abnormal increase in the SDE. The increased DCR may be explained by the suppression of Isw under illumination.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Gap Structure of the Overdoped Iron-Pnictide Superconductor Ba(Fe$_{0.942}$Ni$_{0.058}$)$_{2}$As$_{2}$: A Low-Temperature Specific-Heat Study

Low-temperature specific heat (SH) is measured on the postannealed Ba(Fe_{1-x}Ni_x)_2As_2 single crystal with x = 0.058 under different magnetic fields. The sample locates on the overdoped sides and the critical transition temperature is determined to be 14.8 K by both the magnetization and SH measurements. A simple and reliable analysis shows that, besides the phonon and normal electronic contributions, a clear T2 termemerges in the low temperature SH data.Our observation is similar to that observed in the Co-doped system in our previous work and is consistent with the theoretical prediction for a superconductor with line nodes in the energy gap.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Growth and Characterization of Millimeter-sized Single Crystals of CaFeAsF

High-quality and sizable single crystals are crucial for studying the intrinsic properties of unconventional superconductors, which are lacking in the 1111 phase of the Fe-based superconductors. Here we report the successful growth of CaFeAsF single crystals with the sizes of 1-2 mm using the self-flux method. Owning to the availability of the high-quality single crystals, the structure and transport properties were investigated with a high reliability. The structure was refined by using the single-crystal x-ray diffraction data, which confirms the reports earlier on the basis of powder data. A clear anomaly associated with the structural transition was observed at 121 K from the resistivity, magnetoresistance, and magnetic susceptibility measurements. Another kink-feature at 110 K, most likely an indication of the antiferromagnetic transition, was also detected in the resistivity data. Our results supply a basis to propel the physical investigations on the 1111 phase of the Fe-based superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min, thereby promoting graphene domains up to 20 um in size to be synthesized via chemical vapor deposition on hexagonal boron nitride. Hall measurements show that the mobility of the sample reaches 20,000 cm2/Vs at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in earlier reports are always polycrystalline with small grains due to high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 um2, about 2 orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nano-electronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Characterization of superconducting nanowire single-photon detector with artificial constrictions

Statistical studies on the performance of different superconducting nanowire single-photon detectors (SNSPDs) on one chip suggested that random constrictions existed in the nanowire that were barely registered by scanning electron microscopy. With the aid of advanced e-beam lithography, artificial geometric constrictions were fabricated on SNSPDs as well as single nanowires. In this way, we studied the influence of artificial constrictions on SNSPDs in a straight forward manner. By introducing artificial constrictions with different wire widths in single nanowires, we concluded that the dark counts of SNSPDs originate from a single constriction. Further introducing artificial constrictions in SNSPDs, we studied the relationship between detection efficiency and kinetic inductance and the bias current, confirming the hypothesis that constrictions exist in SNSPDs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High-T_c superconductivity in ultrathin Bi_2Sr_2CaCu_2O_8+x down to halfunit-cell thickness by protection with graphene

High-T_c superconductors confined to two dimension exhibit novel physical phenomena, such as superconductor-insulator transition. In the Bi_2Sr_2CaCu_2O_8+x (Bi2212) model system, despite extensive studies, the intrinsic superconducting properties at the thinness limit have been difficult to determine. Here we report a method to fabricate high quality single-crystal Bi2212 films down to half-unit-cell thickness in the form of graphene/Bi2212 van der Waals heterostructure, in which sharp superconducting transitions are observed. The heterostructure also exhibits a nonlinear current-voltage characteristic due to the Dirac nature of the graphene band structure. More interestingly, although the critical temperature remains essentially the same with reduced thickness of Bi2212, the slope of the normal state T-linear resistivity varies by a factor of 4-5, and the sheet resistance increases by three orders of magnitude, indicating a surprising decoupling of the normal state resistance and superconductivity. The developed technique is versatile, applicable to investigate other two-dimensional (2D) superconducting materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nonideal optical cavity structure of superconducting nanowire single photon detector

Optical cavity structure has been proven to be a crucial factor for obtaining high detection efficiency in superconducting nanowire single photon detector (SNSPD). Practically, complicated fabrication processes may result in a non-ideal optical cavity structure. The cross-sectional transmission electron microscope (TEM) image of SNSPD fabricated in this study shows unexpected arc-shaped optical cavities which could have originated due to the over-etching of SiO2 layer while defining NbN nanowire. The effects of the arc-shaped optical cavity structure, such as the wavelength dependence of the optical absorption efficiency for different polarization, were analyzed by performing optical simulations using finite-difference time-domain method. The central wavelength of the device is found to exhibit a blue shift owing to the arced cavity structure. This effect is equivalent to the flat cavity with a reduced height. The results may give interesting reference for SNSPD design and fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Phase Diagram and Weak-link Behavior in Nd-doped CaFe_2As_2

The transport properties, phase diagram, and dopant distribution are investigated in systematically Nd doped CaFe_2As_2 single crystals. Coexistence of two superconducting (SC) phases with different critical transition temperature (T_c) is observed. The low-T_c phase emerges as x >= 0.031, and the T_c value increases to its maximum value of about 20 K at x = 0.083, the maximum doping level in our study. As x >= 0.060, the high-T_c phase with a T_c value of about 40 K is observed. The structure transition (STr) from tetragonal to orthorhombic phase vanishes suddenly around x = 0.060, where a new STr from tetragonal to collapsed tetragonal phase begins to turn up. Compared to the low-T_c phase, the end point of SC transition of the high-T_c phase is more sensitive to the magnetic field, showing a characteristic of Josephson weak-link behavior. Possible scenarios about this system are discussed based on our observations. We also find that the non-uniform SC properties cannot be attributed to the heterogeneous Nd distribution on the micro scale, as revealed by the detailed energy dispersive X-ray spectroscopy (EDS) measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Superconducting nanowire single photon detector with on-chip bandpass filter

Dark count rate is one of the key parameters limiting the performance of the superconducting nanowire single photon detector (SNSPD). We have designed a multi-layer film bandpass filter that can be integrated onto the SNSPD to suppress the dark counts contributed by the stray light and blackbody radiation of the fiber. The bandpass filter is composed of 16 SiO2/Si bilayers deposited onto the backside of a thermally oxidized Si substrate. The substrate shows an excellent bandpass filter effect and provides a high transmittance of 88% at the central wavelength of the pass band, which is the same as that of the bare substrate. The SNSPDs fabricated on the substrate integrated with the bandpass filter show conspicuous wavelength-sensitive detection efficiency. The background dark count rate is reduced by two orders of magnitude to sub-Hz compared with the conventional SNSPD (a few tens of Hz). The detector exhibits a system detection efficiency of 56% at DCR of 1 Hz, with the measured minimal noise equivalent power reaching 2e-19 w/Hz1/2.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Synthesis, Structural, and Transport Properties of Cr-doped BaTi_2As_2O

The interplay between unconventional superconductivity and the ordering of charge/spin density wave is one of the most vital issues in both condensed matter physics and material science. The Ti-based compound BaTi_2As_2O, which can be seen as the parent phase of superconducting BaTi_2Sb_2O, has a layered structure with a space group P4/mmm, similar to that of cuprate and iron-based superconductors. This material exhibits a charge density wave (CDW) ordering transition revealed by an anomaly at around 200 K in transport measurements. Here, we report the synthesis and systematical study of the physical properties in Cr-doped BaTi_{2-x}Cr_xAs_2O (x = 0 - 0.154), and demonstrate that the transition temperature of the CDW ordering is suppressed gradually by the doped Cr element. The magnetization measurements confirm the evolution of the CDW ordering transition. These observed behaviors are similar to that observed in iron-based superconductors, but no superconductivity emerges down to 2 K. In addition, the first-principles calculations are also carried out for well-understanding the nature of experimental observations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Jitter analysis of a superconducting nanowire single photon detector

Jitter is one of the key parameters for a superconducting nanowire single photon detector (SNSPD). Using an optimized time-correlated single photon counting system for jitter measurement, we extensively studied the dependence of system jitter on the bias current and working temperature. The signal-to-noise ratio of the single-photon-response pulse was proven to be an important factor in system jitter. The final system jitter was reduced to 18 ps by using a high-critical-current SNSPD, which showed an intrinsic SNSPD jitter of 15 ps. A laser ranging experiment using a 15-ps SNSPD achieved a record depth resolution of 3 mm at a wavelength of 1550 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moirre patterns are observed and the sensitivity of moirre interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.05 degree. The occurrence of moirre pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm2/V.s at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Time-of-flight laser ranging and imaging at 1550 nm using low-jitter superconducting nanowire single-photon detection system

We developed a time-correlated single-photon counting (TCSPC) system based on the low-jitter superconducting nanowire single-photon detection (SNSPD) technology. The causes of jitters in the TCSPC system were analyzed. Owing to the low jitter of the SNSPD technology, a system jitter of 26.8 ps full-width at half-maximum was achieved after optimizing the system. We demonstrated time-of-flight laser ranging at 1550 nm wavelength at a stand-off distance of 115 m, based on this TCSPC system. A depth resolution of 4 mm was achieved directly by locating the centroids of each of the two return signals. Laser imaging was also performed using the TCSPC system. This low-jitter TCSPC system using the SNSPD technology presents great potential in long-range measurements and imaging applications for low-energy-level and eye-safe laser systems

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Triggering the Continuous Growth of Graphene toward Millimeter Size Grain

In this report, we demonstrated a simple but efficient strategy to synthesize millimeter-sized graphene single crystal grains by regulating the supply of reactants in chemical vapor deposition process. Polystyrene was used as a carbon source. Pulse heating on the carbon source was utilized to minimize the nucleation density of graphene on copper foil, while the gradual increase in the temperature of carbon source and the flow rate of hydrogen is adapted to drive the continuous growth of graphene grain. As a result, the nucleation density of graphene grain can be controlled as lower as ~100 nuclei/cm2, and the dimension of single crystal grain could grow up to ~1.2 mm. Raman spectroscopy, transmission electron microscopy and electrical transport measurement show that the graphene grains obtained are in high quality. The strategy presented here provides very good controllability and enables the possibility for large graphene single crystals, which is of vital importance for practical applications.

0 citations0 reviewsNo code linkedOpen access