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Researcher profile

Mianheng Jiang

Mianheng Jiang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-concond-mat.str-elphysics.ins-detphysics.optics

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Published work

7 published item(s)

preprint2019arXiv

Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi2O2Se films on SrTiO3 (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm2/V-1s-1 at room temperature in a 70nm-thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min, thereby promoting graphene domains up to 20 um in size to be synthesized via chemical vapor deposition on hexagonal boron nitride. Hall measurements show that the mobility of the sample reaches 20,000 cm2/Vs at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in earlier reports are always polycrystalline with small grains due to high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 um2, about 2 orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nano-electronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High-T_c superconductivity in ultrathin Bi_2Sr_2CaCu_2O_8+x down to halfunit-cell thickness by protection with graphene

High-T_c superconductors confined to two dimension exhibit novel physical phenomena, such as superconductor-insulator transition. In the Bi_2Sr_2CaCu_2O_8+x (Bi2212) model system, despite extensive studies, the intrinsic superconducting properties at the thinness limit have been difficult to determine. Here we report a method to fabricate high quality single-crystal Bi2212 films down to half-unit-cell thickness in the form of graphene/Bi2212 van der Waals heterostructure, in which sharp superconducting transitions are observed. The heterostructure also exhibits a nonlinear current-voltage characteristic due to the Dirac nature of the graphene band structure. More interestingly, although the critical temperature remains essentially the same with reduced thickness of Bi2212, the slope of the normal state T-linear resistivity varies by a factor of 4-5, and the sheet resistance increases by three orders of magnitude, indicating a surprising decoupling of the normal state resistance and superconductivity. The developed technique is versatile, applicable to investigate other two-dimensional (2D) superconducting materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Superconducting nanowire single photon detector with on-chip bandpass filter

Dark count rate is one of the key parameters limiting the performance of the superconducting nanowire single photon detector (SNSPD). We have designed a multi-layer film bandpass filter that can be integrated onto the SNSPD to suppress the dark counts contributed by the stray light and blackbody radiation of the fiber. The bandpass filter is composed of 16 SiO2/Si bilayers deposited onto the backside of a thermally oxidized Si substrate. The substrate shows an excellent bandpass filter effect and provides a high transmittance of 88% at the central wavelength of the pass band, which is the same as that of the bare substrate. The SNSPDs fabricated on the substrate integrated with the bandpass filter show conspicuous wavelength-sensitive detection efficiency. The background dark count rate is reduced by two orders of magnitude to sub-Hz compared with the conventional SNSPD (a few tens of Hz). The detector exhibits a system detection efficiency of 56% at DCR of 1 Hz, with the measured minimal noise equivalent power reaching 2e-19 w/Hz1/2.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition

To grow precisely aligned graphene on h-BN without metal catalyst is extremely important, which allows for intriguing physical properties and devices of graphene/h-BN hetero-structure to be studied in a controllable manner. In this report, such hetero-structures were fabricated and investigated by atomic resolution scanning probe microscopy. Moirre patterns are observed and the sensitivity of moirre interferometry proves that the graphene grains can align precisely with the underlying h-BN lattice within an error of less than 0.05 degree. The occurrence of moirre pattern clearly indicates that the graphene locks into h-BN via van der Waals epitaxy with its interfacial stress greatly released. It is worthy to note that the edges of the graphene grains are primarily oriented along the armchair direction. The field effect mobility in such graphene flakes exceeds 20,000 cm2/V.s at ambient condition. This work opens the door of atomic engineering of graphene on h-BN, and sheds light on fundamental research as well as electronic applications based on graphene/h-BN hetero-structure.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Triggering the Continuous Growth of Graphene toward Millimeter Size Grain

In this report, we demonstrated a simple but efficient strategy to synthesize millimeter-sized graphene single crystal grains by regulating the supply of reactants in chemical vapor deposition process. Polystyrene was used as a carbon source. Pulse heating on the carbon source was utilized to minimize the nucleation density of graphene on copper foil, while the gradual increase in the temperature of carbon source and the flow rate of hydrogen is adapted to drive the continuous growth of graphene grain. As a result, the nucleation density of graphene grain can be controlled as lower as ~100 nuclei/cm2, and the dimension of single crystal grain could grow up to ~1.2 mm. Raman spectroscopy, transmission electron microscopy and electrical transport measurement show that the graphene grains obtained are in high quality. The strategy presented here provides very good controllability and enables the possibility for large graphene single crystals, which is of vital importance for practical applications.

0 citations0 reviewsNo code linkedOpen access