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Gang Mu

Gang Mu contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Anomalous High-Field Magnetotransport in CaFeAsF due to the Quantum Hall Effect

CaFeAsF is an iron-based superconductor parent compound whose Fermi surface is quasi-two dimensional, composed of Dirac-electron and Schrödinger-hole cylinders elongated along the $c$ axis. We measured the longitudinal and Hall resistivities in CaFeAsF with the electrical current in the $ab$ plane in magnetic fields up to 45 T applied along the $c$ axis and obtained the corresponding conductivities via tensor inversion. We found that both the longitudinal and Hall conductivities approached zero above $\sim$40 T as the temperature was lowered to 0.4 K. Our analysis indicates that the Landau-level filling factor is $ν$ = 2 for both electrons and holes at these high field strengths, resulting in a total filling factor $ν$ = $ν_{hole} - ν_{electron}$ = 0. We therefore argue that the $ν$ = 0 quantum Hall state emerges under these conditions.

preprint2022arXiv

Topological frequency shift of quantum oscillation in CaFeAsF

Guo, Alexandradinata, \textit{et al.} have recently proposed that quantum-oscillation frequencies from Dirac/Weyl fermions exhibit a negative shift proportional to $T^2$ because of the energy dependence of the effective mass peculiar to a linear band-dispersion. We have measured Shubnikov--de Haas oscillation in CaFeAsF up to $T$ = 9 K. The frequency of the $α$ Dirac electron exhibits a negative shift with increasing $T$, while that of the $β$ Schrödinger hole does not. For $T \geqslant 5$ K where $β$ is negligible, the $α$-frequency shift is proportional to $T^2$ and its rate agrees with the theoretical prediction within experimental accuracy. At lower temperatures, the shifts of $α$ and $β$ deviate from theoretical expectations, which we ascribe to the inaccuracy in the frequency determination due to unfavorable interference between frequencies. Our results confirm that the topological frequency shift can be utilized to identify Dirac/Weyl fermions when quantum-oscillation frequencies can be determined accurately.

preprint2020arXiv

Elastoresistance measurements on CaKFe$_4$As$_4$ and KCa$_2$Fe$_4$As$_4$F$_2$ with the Fe site of $C_{2v}$ symmetry

We report resistance and elastoresistance measurements on (Ba$_{0.5}$K$_{0.5}$)Fe$_2$As$_2$, CaKFe$_4$As$_4$, and KCa$_2$Fe$_4$As$_4$F$_2$. The Fe-site symmetry is $D_{2d}$ in the first compound but $C_{2v}$ in the latter two, which lifts the degeneracy of the Fe $d_{xz}$ and $d_{yz}$ orbitals. The temperature dependence of the resistance and elastoresistance is similar between the three compounds. Especially, the [110] elastoresistance is enhanced with decreasing temperature irrespective of the Fe-site symmetry. This appears to be in conflict with recent Raman scattering studies on CaKFe$_4$As$_4$, which suggest the absence of nematic fluctuations. We consider possible ways of reconciliation and suggest that the present result is important in elucidating the origin of in-plane resistivity anisotropy in iron-based superconductors.

preprint2020arXiv

Evidence the ferromagnetic order on CoSb layer of LaCoSb$_2$

The emergence of unconventional superconductivity is generally considered to be related to spin fluctuations. Unveiling the intriguing behaviors of spin fluctuations in parent compounds with layered transition-metal ions may shed light on the search for exotic unconventional superconductors. Here, based on the framework of the first-principles calculations, we theoretically propose that LaCoSb$_2$ is a weak antiferromagnetic layered metal with an in-plane ferromagnetic moment of 0.88 $μ_B$ at the Co sites, as a candidate parent compound of the cobalt-based superconductors. Importantly, this theoretical finding is experimentally supported by our magnetization measurements on polycrystalline samples of LaCo$_{0.78}$Sb$_2$. Following the symmetry analysis, we suggest a possible $p$-wave superconductivity hosted in doped LaCoSb$_2$ emerging at the verge of ferromagnetic spin fluctuations, which implies potential applications in topological quantum computing in future.

preprint2020arXiv

Low temperature specific heat of 12442-type KCa_2Fe_4As_4F_2 single crystals

Low-temperature specific heat (SH) is measured for the 12442-type KCa$_2$Fe$_4$As$_4$F$_2$ single crystal under different magnetic fields. A clear SH jump with the height of $ΔC/T|_{T_c}$ = 130 mJ/mol K$^2$ is observed at the superconducting transition temperature $T_c$. It is found that the electronic SH coefficient $Δγ(H)$ quickly increases when the field is in the low-field region below 3 T and then considerably slows down the increase with a further increase in the field, which indicates a rather strong anisotropy or multi-gap feature with a small minimum in the superconducting gap(s). The temperature-dependent SH data indicates the presence of the $T^2$ term, which supplies further information and supports the picture with a line-nodal gap structure. Moreover, the onset point of the SH transition remains almost unchanged under the field as high as 9 T, which is similar to that observed in cuprates, and placed this system in the middle between the BCS limit and the Bose-Einstein condensation.

preprint2019arXiv

Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi2O2Se films on SrTiO3 (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm2/V-1s-1 at room temperature in a 70nm-thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.