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Werner Wegscheider

Werner Wegscheider appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-phcond-mat.str-elphysics.opticscond-mat.other

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Published work

69 published item(s)

preprint2022arXiv

Large-bandwidth transduction between an optical single quantum-dot molecule and a superconducting resonator

Quantum transduction between the microwave and optical domains is an outstanding challenge for long-distance quantum networks based on superconducting qubits. For all transducers realized to date, the generally weak light-matter coupling does not allow high transduction efficiency, large bandwidth, and low noise simultaneously. Here we show that a large electric dipole moment of an exciton in an optically active self-assembled quantum dot molecule (QDM) efficiently couples to a microwave resonator field at a single-photon level. This allows for transduction between microwave and optical photons without coherent optical pump fields to enhance the interaction. With an on-chip device, we demonstrate a sizeable single-photon coupling strength of 16 MHz. Thanks to the fast exciton decay rate in the QDM, the transduction bandwidth between an optical and microwave resonator photon reaches several 100s of MHz.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a crucial role. Here we present the first detailed experimental characterization of long-range electron-electron interactions in an array of gate-defined semiconductor quantum dots. We demonstrate significant interaction strength among electrons that are separated by up to four sites, and show that our theoretical prediction of the screening effects matches well the experimental results. Based on these findings, we investigate how long-range interactions in quantum-dot arrays may be utilized for analog simulations of artificial quantum matter. We numerically show that about ten quantum dots are sufficient to observe binding for a one-dimensional $H_2$-like molecule. These combined experimental and theoretical results pave the way for future quantum simulations with quantum dot arrays and benchmarks of numerical methods in quantum chemistry.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

An ultrastrongly coupled single THz meta-atom

Free-space coupling to strongly subwavelength individual optical elements is a central theme in quantum optics, as it allows to control and manipulate the properties of quantum systems. In this work, we show that by combining an asymmetric immersion lens setup and complementary design of metasurfaces we are able to perform THz time-domain spectroscopy of an individual, strongly subwavelength (d/λ0=1/20) meta-atom. We unravel the linewidth dependence of planar metamaterials as a function of the meta-atom number indicating quenching of the Dicke superradiance. On these grounds, we investigate ultrastrongly coupled Landau polaritons at the single resonator level, measuring a normalized coupling ratio of Ω/ω=0.60 resulting from coupling of the fundamental mode to a few thousand electrons. Similar measurements on a low loss, less doped two dimensional electron gas yield a coupling ratio Ω/ω=0.33 with a cooperativity C=4g^2/κγ= 94. Interestingly, the coupling strength of a coupled single resonator is the same as of a coupled array. Our findings pave the way towards the control of light-matter interaction in the ultrastrong coupling regime at the single electron/single resonator level. The proposed technique is way more general and can be useful to characterize the complex conductivity of micron-sized samples in the THz and sub-THz domain.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Breakdown of the topological protection by cavity vacuum fields in the integer quantum Hall effect

The control of the electronic properties of materials via the vacuum fields of cavity electromagnetic resonators is one of the emerging frontiers of condensed matter physics. We show here that the enhancement of vacuum field fluctuations in subwavelength split-ring resonators dramatically affects arguably one of the most paradigmatic quantum protectorates, namely the quantum Hall electron transport in high-mobility 2D electron gases. The observed breakdown of the topological protection of the integer quantum Hall effect is interpreted in terms of a long-range cavity-mediated electron hopping where the anti-resonant terms of the light-matter coupling finally result into a finite resistivity induced by the vacuum fluctuations. The present experimental platform can be used for any 2D material and provides new ways to manipulate electron phases in matter thanks to vacuum-field engineering

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Observation of quantum Hall interferometer phase jumps due to changing quasiparticle number

We measure the magneto-conductance through a micron-sized quantum dot hosting about 500 electrons in the quantum Hall regime. In the Coulomb blockade, when the island is weakly coupled to source and drain contacts, edge reconstruction at filling factors between one and two in the dot leads to the formation of two compressible regions tunnel coupled via an incompressible region of filling factor $ν=1$. We interpret the resulting conductance pattern in terms of a phase diagram of stable charge in the two compressible regions. Increasing the coupling of the dot to source and drain, we realize a Fabry-Pérot quantum Hall interferometer, which shows an interference pattern strikingly similar to the phase diagram in the Coulomb blockade regime. We interpret this experimental finding using an empirical model adapted from the Coulomb blockaded to the interferometer case. The model allows us to relate the observed abrupt jumps of the Fabry-Pérot interferometer phase to a change in the number of bulk quasiparticles. This opens up an avenue for the investigation of phase shifts due to (fractional) charge redistributions in future experiments on similar devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Thermoelectric cooling properties of a quantum Hall Corbino device

We analyze the thermoelectric cooling properties of a Corbino device in the quantum Hall regime on the basis of experimental data of electrical conductance. We focus on the cooling power and the coefficient of performance within and beyond linear response. Thermovoltage measurements in this device reported in {\em Phys. Rev. Applied, {\bf 14} 034019 (2020)} indicated that the transport takes place in the diffusive regime, without signatures of effects due to the electron-phonon interaction in a wide range of temperatures and filling factors. In this regime, the heat and charge currents by electrons can be described by a single transmission function. We infer this function from experimental data of conductance measurements and we calculate the cooling power and the coefficient of performance for a wide range of filling factors and temperatures, as functions of the thermal and electrical biases. We predict an interesting cooling performance in several parameter regimes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A polariton electric field sensor

We experimentally demonstrate a dipolar polariton based electric field sensor. We tune and optimize the sensitivity of the sensor by varying the dipole moment of polaritons. We show polariton interactions play an important role in determining the conditions for optimal electric field sensing, and achieve a sensitivity of 0.12 V-m$^{-1}$-Hz$^{-0.5}$. Finally we apply the sensor to illustrate that excitation of polaritons modify the electric field in a spatial region much larger than the optical excitation spot.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Accelerating Polaritons with External Electric and Magnetic Fields

It is widely assumed that photons cannot be manipulated using electric or magnetic fields. Even though hybridization of photons with electronic polarization to form exciton-polaritons has paved the way to a number of ground-breaking experiments in semiconductor microcavities, the neutral bosonic nature of these quasiparticles has severely limited their response to external gauge fields. Here, we demonstrate polariton acceleration by external electric and magnetic fields in the presence of nonperturbative coupling between polaritons and itinerant electrons, leading to formation of new quasiparticles termed polaron-polaritons. We identify the generation of electron density gradients by the applied fields to be primarily responsible for inducing a gradient in polariton energy, which in turn leads to acceleration along a direction determined by the applied fields. Remarkably, we also observe that different polarization components of the polaritons can be accelerated in opposite directions when the electrons are in $ν= 1$ integer quantum Hall state.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic g-factor and Magneto-transport in InSb Quantum Wells

High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of $m^*\approx0.017 m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nagaoka ferromagnetism observed in a quantum dot plaquette

Engineered, highly-controllable quantum systems hold promise as simulators of emergent physics beyond the capabilities of classical computers. An important problem in many-body physics is itinerant magnetism, which originates purely from long-range interactions of free electrons and whose existence in real systems has been subject to debate for decades. Here we use a quantum simulator consisting of a four-site square plaquette of quantum dots to demonstrate Nagaoka ferromagnetism. This form of itinerant magnetism has been rigorously studied theoretically but has remained unattainable in experiment. We load the plaquette with three electrons and demonstrate the predicted emergence of spontaneous ferromagnetic correlations through pairwise measurements of spin. We find the ferromagnetic ground state is remarkably robust to engineered disorder in the on-site potentials and can induce a transition to the low-spin state by changing the plaquette topology to an open chain. This demonstration of Nagaoka ferromagnetism highlights that quantum simulators can be used to study physical phenomena that have not yet been observed in any system before. The work also constitutes an important step towards large-scale quantum dot simulators of correlated electron systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Realization of a $CQ_3$ Qubit: energy spectroscopy and coherence

The energy landscape of a single electron in a triple quantum dot can be tuned such that the energy separation between ground and excited states becomes a flat function of the relevant gate voltages. These so-called sweet spots are beneficial for charge coherence, since the decoherence effects caused by small fluctuations of gate voltages or surrounding charge fluctuators are minimized. We propose a new operation point for a triple quantum dot charge qubit, a so-called $CQ_3$-qubit, having a third order sweet spot. We show strong coupling of the qubit to single photons in a frequency tunable high-impedance SQUID-array resonator. In the dispersive regime we investigate the qubit linewidth in the vicinity of the proposed operating point. In contrast to the expectation for a higher order sweet spot, we there find a local maximum of the linewidth. We find that this is due to a non-negligible contribution of noise on the quadrupolar detuning axis not being in a sweet spot at the proposed operating point. While the original motivation to realize a low-decoherence charge qubit was not fulfilled, our analysis provides insights into charge decoherence mechanisms relevant also for other qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Thermoelectricity in Quantum-Hall Corbino Structures

We measure the thermoelectric response of Corbino structures in the quantum Hall effect regime and compare it with a theoretical analysis. The measured thermoelectric voltages are qualitatively and quantitatively simulated based upon the independent measurement of the conductivity indicating that they originate predominantly from the electron diffusion. Electron-phonon interaction does not lead to a phonon-drag contribution in contrast to earlier Hall-bar experiments. This implies a description of the Onsager coefficients on the basis of a single transmission function, from which both thermovoltage and conductivity can be predicted with a single fitting parameter. It furthermore let us predict a figure of merit for the efficiency of thermoelectric cooling which becomes very large for partially filled Landau levels (LL) and high magnetic fieldse of merit can be estimated which becomes very large for partially filled Landau levels and high magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Automated tuning of double quantum dots into specific charge states using neural networks

While quantum dots are at the forefront of quantum device technology, tuning multi-dot systems requires a lengthy experimental process as multiple parameters need to be accurately controlled. This process becomes increasingly time-consuming and difficult to perform manually as the devices become more complex and the number of tuning parameters grows. In this work, we present a crucial step towards automated tuning of quantum dot qubits. We introduce an algorithm driven by machine learning that uses a small number of coarse-grained measurements as its input and tunes the quantum dot system into a pre-selected charge state. We train and test our algorithm on a GaAs double quantum dot device and we consistently arrive at the desired state or its immediate neighborhood.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer

Electron optics in the solid state promises new functionality in electronics through the possibility of realizing micrometer-sized interferometers, lenses, collimators and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p-n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-Pérot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p-n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics to encompass materials that exhibit band inversion and hybridization, with the promise to surpass the performance of current state-of-the-art devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Landau polaritons in highly non-parabolic 2D gases in the ultra-strong coupling regime

We probe ultra-strong light matter coupling between metallic terahertz metasurfaces and Landau-level transitions in high mobility 2D electron and hole gases. We utilize heavy-hole cyclotron resonances in strained Ge and electron cyclotron resonances in InSb quantum wells, both within highly non-parabolic bands, and compare our results to well known parabolic AlGaAs/GaAs quantum well (QW) systems. Tuning the coupling strength of the system by two methods, lithographically and by optical pumping, we observe a novel behavior clearly deviating from the standard Hopfield model previously verified in cavity quantum electrodynamics: an opening of a lower polaritonic gap.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Phonon spectral density in a GaAs/AlGaAs double quantum dot

We study phonon emission in a GaAs/AlGaAs double quantum dot by monitoring the tunneling of a single electron between the two dots. We prepare the system such that a known amount of energy is emitted in the transition process. The energy is converted into lattice vibrations and the resulting tunneling rate depends strongly on the phonon scattering and its effective phonon spectral density. We are able to fit the measured transition rates and see imprints of interference of phonons with themselves causing oscillations in the transition rates.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells

Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and compare it with another sample in the non-inverted semiconducting regime. Activated behavior in conjunction with a strong suppression of the resistance peak at the charge neutrality point in a parallel magnetic field attest to the topological hybridization gap between electron and hole bands in the inverted sample. We observe an unconventional Landau level spectrum with energy gaps modulated by the magnetic field applied perpendicular to the quantum wells. This is caused by strong spin-orbit interaction provided jointly by the InAs and the GaSb quantum wells.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Investigating Energy Scales of Fractional Quantum Hall States using Scanning Gate Microscopy

We use the voltage biased tip of a scanning force microscope at a temperature of 35\,mK to locally induce the fractional quantum Hall state of $ν=1/3$ in a split-gate defined constriction. Different tip positions allow us to vary the potential landscape. From temperature dependence of the conductance plateau at $G=1/3 \times e^2/h$ we determine the activation energy of this local $ν=1/3$ state. We find that at a magnetic field of 6\,T the activation energy is between 153\,$μ$eV and 194\,$μ$eV independent of the shape of the confining potential, but about 50\% lower than for bulk samples.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measuring the degeneracy of discrete energy levels using a GaAs/AlGaAs quantum dot

We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance, and the ability to perform precise and efficient measurements of energy-dependent tunnelling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunnelling with a precision enhanced by a feedback-control. It is thoroughly tested by tuning orbital and spin-degeneracies with electric and magnetic fields. The technique also lends itself for studying the connection between the ground state degeneracy and the lifetime of the excited states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Non-local polarization feedback in a fractional quantum Hall ferromagnet

In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a non-local effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a $ν=2/3$ fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation

We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

THz ultrastrong light-matter coupling

Cavity photon resonators with ultrastrong light-matter interactions are attracting interest both in semiconductor and superconducting systems displaying the capability to manipulate the cavity quantum electrodynamic ground state with controllable physical properties. Here we review a series of experiments aimed at probing the ultrastrong light-matter coupling regime, where the vacuum Rabi splitting $Ω$ is comparable to the bare transition frequency $ω$ . We present a new platform where the inter-Landau level transition of a two-dimensional electron gas (2DEG) is strongly coupled to the fundamental mode of deeply subwavelength split-ring resonators operating in the mm-wave range. Record-high values of the normalized light-matter coupling ratio $\fracΩω= 0.89$ are reached and the system appears highly scalable far into the microwave range.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Capacitive coupling in hybrid Graphene-GaAs nanostructures

Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the surface of the heterostructure and therefore allows tuning the electronic density of the 2DEG. Conversely, the 2DEG potential can tune the graphene Fermi energy. Graphene-defined quantum point contacts in the 2DEG show half-plateaus of quantized conductance in finite bias spectroscopy and display the 0.7 anomaly for a large range of densities in the constriction, testifying to their good electronic properties. Finally, we demonstrate that the GaAs nanostructure can detect charges in the vicinity of the heterostructure's surface. This confirms the strong coupling of the hybrid device: localized states in the graphene ribbon could in principle be probed by the underlying confined channel. The present hybrid graphene/GaAs nanostructures are promising for the investigation of strong interactions and coherent coupling between the two fundamentally different materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Equilibrium free energy measurement of a confined electron driven out of equilibrium

We study out-of equilibrium properties of a quantum dot in a GaAs/AlGaAs two-dimensional electron gas. By means of single electron counting experiments, we measure the distribution of work and dissipated heat of the driven quantum dot and relate these quantities to the equilibrium free energy change, as it has been proposed by C. Jarzynski [Phys. Rev. Lett. {\bf78}, 2690 (1997)]. We discuss the influence of the degeneracy of the quantized energy state on the free energy change as well as its relation to the tunnel rates between the dot and the reservoir.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Generation and Detection of Spin Currents in Semiconductor Nanostructures with Strong Spin-Orbit Interaction

Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the different platforms proposed so far, semiconductors with strong spin-orbit interaction are especially attractive as they promise fast and scalable spin control with all-electrical protocols. Here we demonstrate both the generation and measurement of pure spin currents in semiconductor nanostructures. Generation is purely electrical and mediated by the spin dynamics in materials with a strong spin-orbit field. Measurement is accomplished using a spin-to-charge conversion technique, based on the magnetic field symmetry of easily measurable electrical quantities. Calibrating the spin-to-charge conversion via the conductance of a quantum point contact, we quantitatively measure the mesoscopic spin Hall effect in a multiterminal GaAs dot. We report spin currents of 174 pA, corresponding to a spin Hall angle of 34%.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Mapping an electron wave function by a local electron scattering probe

A technique is developed which allows for the detailed mapping of the electronic wave function in two-dimensional electron gases with low-temperature mobilities up to 15E6 cm^2/Vs. Thin ("delta") layers of aluminium are placed into the regions where the electrons reside. This causes electron scattering which depends very locally on the amplitude of the electron wave function at the position of the Al "delta"-layer. By changing the distance of this layer from the interface we map the shape of the wave function perpendicular to the interface. Despite having a profound effect on the electron mobiliy, the "delta"-layers do not cause a widening of the quantum Hall plateaus.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Multistability and spin diffusion enhanced lifetimes in dynamic nuclear polarization in a double quantum dot

The control of nuclear spins in quantum dots is essential to explore their many-body dynamics and exploit their prospects for quantum information processing. We present a unique combination of dynamic nuclear spin polarization and electric-dipole-induced spin resonance in an electrostatically defined double quantum dot (DQD) exposed to the strongly inhomogeneous field of two on-chip nanomagnets. Our experiments provide direct and unrivaled access to the nuclear spin polarization distribution and allow us to establish and characterize multiple fixed points. Further, we demonstrate polarization of the DQD environment by nuclear spin diffusion which significantly stabilizes the nuclear spins inside the DQD.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Non-local transport via edge-states in InAs/GaSb coupled quantum wells

We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,μ$m in length down to a few $μ$m gradually develop a pronounced resistance plateau near charge-neutrality, which comes along with distinct non-local transport along the edges. Plateau resistances are found to be above or below the quantized value expected for helical edge channels. We discuss these results based on the interplay between imperfect edges and residual local bulk conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Single-Spin CCD

Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision. In its ultimate limit, information is stored in the spin state of a single electron, at which point also quantum information processing becomes a possibility. Here we demonstrate the manipulation, transport and read-out of individual electron spins in a linear array of three semiconductor quantum dots. First, we demonstrate single-shot read-out of three spins with fidelities of 97% on average, using an approach analogous to the operation of a charge-coupled-device (CCD). Next, we perform site-selective control of the three spins thereby writing the content of each pixel of this "Single-Spin CCD". Finally, we show that shuttling an electron back and forth in the array hundreds of times, covering a cumulative distance of 80 $μ$m, has negligible influence on its spin projection. Extrapolating these results to the case of much larger arrays, points at a diverse range of potential applications, from quantum information to imaging and sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Transport Spectroscopy of a Spin-Coherent Dot-Cavity System

Quantum engineering requires controllable artificial systems with quantum coherence exceeding the device size and operation time. This can be achieved with geometrically confined low-dimensional electronic structures embedded within ultraclean materials, with prominent examples being artificial atoms (quantum dots) and quantum corrals (electronic cavities). Combining the two structures, we implement a mesoscopic coupled dot-cavity system in a high-mobility two-dimensional electron gas, and obtain an extended spin-singlet state in the regime of strong dot-cavity coupling. Engineering such extended quantum states presents a viable route for nonlocal spin coupling that is applicable for quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Characterization of spin-orbit interactions of GaAs heavy holes using a quantum point contact

We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed anisotropic Zeeman splitting and level-dependent effective g-factors. Here we find additional effects, namely the crossing and the anti-crossing of spin-split levels depending on subband index and magnetic field direction. Our experimental observations are reconciled in an heavy hole effective spin-orbit Hamiltonian where cubic- and quadratic-in-momentum terms appear. The spin-orbit components, being of great importance for quantum computing applications, are characterized in terms of magnitude and spin structure. In the light of our results, we explain the level dependent effective g-factor in an in-plane field. Through a tilted magnetic field analysis, we show that the QPC out-of-plane g-factor saturates around the predicted 7.2 bulk value.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Edge-mode Superconductivity in a Two Dimensional Topological Insulator

Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which are surface modes in 3D, edge modes in 2D or localized end states in 1D. In the case of complete localization these Majorana modes obey non-Abelian exchange statistics making them interesting building blocks for topological quantum computing. Here we report superconductivity induced into the edge modes of semiconducting InAs/GaSb quantum wells, a two-dimensional topological insulator. Using superconducting quantum interference, we demonstrate gate-tuning between edge-dominated and bulk-dominated regimes of superconducting transport. The edge-dominated regime arises only under conditions of high-bulk resistivity, which we associate with the 2D topological phase. These experiments establish InAs/GaSb as a robust platform for further confinement of Majoranas into localized states enabling future investigations of non-Abelian statistics.

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preprint2014arXiv

Evaluating charge noise acting on semiconductor quantum dots in the circuit quantum electrodynamics architecture

We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase ($I$) and the quadrature ($Q$) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of $8.5\times10^{-5} \mbox{e}/\sqrt{\mbox{Hz}}$. A low frequency $1/f$ type noise spectrum combined with a white noise level of $6.6\times10^{-6}$ $\mbox{e}^2/\mbox{Hz}$ above $1$ Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope of the $1/f$ noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.

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preprint2014arXiv

Experimental probe of topological orders and edge excitations in the second Landau level

We measure weak quasiparticle tunneling across a constriction in the second Landau level. At $ν$ = 7/3, 8/3 and 5/2, comparison of temperature and DC bias dependence to weak tunneling theory allows extracting parameters that describe the edges' quasiparticle excitations. At $ν$ = 8/3, our results are well described by a particle-hole conjugate Laughlin state, but not compatible with proposed non-Abelian quasiparticle excitations. For $ν$ = 5/2, our measurements are in good agreement with previous experiments and favor the Abelian (3,3,1) or (1,1,3)-states. At these filling factors, we further investigate the influence of the backscattering strength on the extracted scaling parameters. For $ν$ = 7/3, the backscattering strength strongly affects the scaling parameters, whereas quasiparticle tunneling at $ν$ = 8/3 and 5/2 appears more robust. Our results provide important additional insight about the physics in the second Landau level and contribute to the understanding of the physics underlying the fractional quantum Hall states at $ν$ = 7/3, 8/3 and 5/2.

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preprint2014arXiv

Increasing the ν = 5 / 2 gap energy: an analysis of MBE growth parameters

The fractional quantized Hall state (FQHS) at the filling factor ν = 5/2 is of special interest due to its possible application for quantum computing. Here we report on the optimization of growth parameters that allowed us to produce two-dimensional electron gases (2DEGs) with a 5/2 gap energy up to 135 mK. We concentrated on optimizing the MBE growth to provide high 5/2 gap energies in "as-grown" samples, without the need to enhance the 2DEGs properties by illumination or gating techniques. Our findings allow us to analyse the impact of doping in narrow quantum wells with respect to conventional DX-doping in AlxGa1-xAs. The impact of the setback distance between doping layer and 2DEG was investigated as well. Additionally, we found a considerable increase in gap energy by reducing the amount of background impurities. To this end growth techniques like temperature reductions for substrate and effusion cells and the reduction of the Al mole fraction in the 2DEG region were applied.

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preprint2014arXiv

On the relation between the 0.7-anomaly and the Kondo effect: Geometric Crossover between a Quantum Point Contact and a Kondo Quantum Dot

Quantum point contacts (QPCs) and quantum dots (QDs), two elementary building blocks of semiconducting nanodevices, both exhibit famously anomalous conductance features: the 0.7-anomaly in the former case, the Kondo effect in the latter. For both the 0.7-anomaly and the Kondo effect, the conductance shows a remarkably similar low-energy dependence on temperature $T$, source-drain voltage $V_{\rm sd}$ and magnetic field $B$. In a recent publication [F. Bauer et al., Nature, 501, 73 (2013)], we argued that the reason for these similarities is that both a QPC and a KQD feature spin fluctuations that are induced by the sample geometry, confined in a small spatial regime, and enhanced by interactions. Here we further explore this notion experimentally and theoretically by studying the geometric crossover between a QD and a QPC, focussing on the $B$-field dependence of the conductance. We introduce a one-dimensional model that reproduces the essential features of the experiments, including a smooth transition between a Kondo QD and a QPC with 0.7-anomaly. We find that in both cases the anomalously strong negative magnetoconductance goes hand in hand with strongly enhanced local spin fluctuations. Our experimental observations include, in addition to the Kondo effect in a QD and the 0.7-anomaly in a QPC, Fano interference effects in a regime of coexistence between QD and QPC physics, and Fabry-Perot-type resonances on the conductance plateaus of a clean QPC. We argue that Fabry-Perot-type resonances occur generically if the electrostatic potential of the QPC generates a flatter-than-parabolic barrier top.

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preprint2014arXiv

Scanning Gate Imaging of quantum point contacts and the origin of the 0.7 Anomaly

The origin of the anomalous transport feature appearing at conductance G \approx 0.7 x (2e2/h) in quasi-1D ballistic devices - the so-called 0.7 anomaly - represents a long standing puzzle. Several mechanisms were proposed to explain it, but a general consensus has not been achieved. Proposed explanations are based on quantum interference, Kondo effect, Wigner crystallization, and more. A key open issue is whether point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-1D constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems.

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preprint2014arXiv

Spectroscopy of Equilibrium and Non-Equilibrium Charge Transfer in Semiconductor Quantum Structures

We investigate equilibrium and non-equilibrium charge-transfer processes by performing high-resolution transport spectroscopy. Using electrostatically defined quantum dots for energy-selective emission and detection, we achieved unprecedented spectral resolution and a high degree of tunability of relevant experimental parameters. Most importantly, we observe that the spectral width of elastically transferred electrons can be substantially smaller than the linewidth of a thermally broadened Coulomb peak. This finding indicates that the charge-transfer process is fast compared to the electron--phonon interaction time. By drawing an analogy to double quantum dots, we argue that the spectral width of the elastic resonance is determined by the lifetime broadening $h\itΓ$ of the emitter and detector states. Good agreement with the model is found also in an experiment in which the charge transfer is in the regime $h\itΓ\gg k_{\rm{B}}T$. By performing spectroscopy below the Fermi energy, we furthermore observe elastic and inelastic transfer of holes.

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preprint2014arXiv

Spin-orbit splitting and effective masses in p-type GaAs two-dimensional hole gases

We present magnetotransport measurements performed on two-dimensional hole gases embedded in carbon doped p-type GaAs/AlGaAs heterostructures grown on [001] oriented substrates. A pronounced beating pattern in the Shubnikov-de Haas oscillations proves the presence of strong spin-orbit interaction in the device under study. We estimate the effective masses of spin-orbit split subbands by measuring the temperature dependence of the Shubnikov-de Haas oscillations at different hole densities. While the lighter heavy-hole effective mass is not energy dependent, the heavier heavy-hole effective mass has a prominent energy dependence, indicating a strong spin-orbit induced non parabolicity of the valence band. The measured effective masses show qualitative agreement with self-consistent numerical calculations.

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preprint2014arXiv

Ultrastrong Coupling in the Near-field of Complementary Split Ring Resonators

The ultrastrong light-matter interaction regime was investigated in metallic and superconducting complementary split ring resonators coupled to the cyclotron transition of two dimensional electron gases. The sub-wavelength light confinement and the large optical dipole moment of the cyclotron transition yield record high normalized coupling rates of up to $\frac{Ω_R}{ω_c}=$ 0.87. We observed a blue-shift of both polaritons due to the diamagnetic term of the interaction Hamiltonian.

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preprint2013arXiv

Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties

We present low-temperature transport experiments on Aharonov-Bohm (AB) rings fabricated from two-dimensional hole gases in p-type GaAs/AlGaAs heterostructures. Highly visible h/e (up to 15%) and h/2e oscillations, present for different gate voltages, prove the high quality of the fabricated devices. Like in previous work, a clear beating pattern of the h/e and h/2e oscillations is present in the magnetoresistance, producing split peaks in the Fourier spectrum. The magnetoresistance evolution is presented and discussed as a function of temperature and gate voltage. It is found that sample specific properties have a pronounced influence on the observed behavior. For example, the interference of different transverse modes or the interplay between h/e oscillations and conductance fluctuations can produce the features mentioned above. In previous work they have occasionally been interpreted as signatures of spin-orbit interaction (SOI)-induced effects. In the light of these results, the unambiguous identification of SOI-induced phase effects in AB rings remains still an open and challenging experimental task.

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preprint2013arXiv

Cyclic Depopulation of Edge States in a large Quantum Dot

We investigate magneto-transport through a 1.6 μm wide quantum dot (QD) with adjacent charge detector, for different integer filling factors in the QD and constrictions. When this system is operated as a Fabry-Pérot interferometer, transport is governed by a Coulomb blockade mechanism. In the tunneling regime, we can directly measure the charge stability diagram of two capacitively and tunnel coupled Landau levels. This situation has been investigated in direct transport, as well as in single electron counting. The edge states within the dot are non-cyclically depopulated, which can be explained by a simple capacitive model and allows to draw conclusions about the edge state geometry within the quantum dot.

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preprint2013arXiv

Imaging the Conductance of Integer and Fractional Quantum Hall Edge States

We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of the conductance as a function of tip position at integer (ν=1,2,3,4,6,8) and fractional (ν=1/3,2/3,5/3,4/5) values of transmission. They resemble theoretically predicted compressible and incompressible stripes of quantum Hall edge states. The scanning tip allows us to shift the constriction limiting the conductance in real space over distances of many microns. The resulting stripes of integer and fractional filling factors are rugged on the micron scale, i.e. on a scale much smaller than the zero-field elastic mean free path of the electrons. Our experiments demonstrate that microscopic inhomogeneities are relevant even in high-quality samples and lead to locally strongly fluctuating widths of incompressible regions even down to their complete suppression for certain tip positions. The macroscopic quantization of the Hall resistance measured experimentally in a non-local contact configuration survives in the presence of these inhomogeneities, and the relevant local energy scale for the ν=2 state turns out to be independent of tip position.

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preprint2013arXiv

Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime

We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced non-local resistance signal of almost similar magnitude. The co-existence of these two effects is reconciled in a model of counter-propagating and dissipative quantum Hall edge channels providing backscattering, shorted by a residual bulk conductivity.

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preprint2013arXiv

Long-range coherent coupling in a quantum dot array

Controlling long-range quantum correlations is central to quantum computation and simulation. In quantum dot arrays, experiments so far rely on nearest-neighbour couplings only, and inducing long-range correlations requires sequential local operations. Here we show that two distant sites can be tunnel coupled directly. The coupling is mediated by virtual occupation of an intermediate site, with a strength that is controlled via the energy detuning of this site. It permits a single charge to oscillate coherently between the outer sites of a triple dot array without passing through the middle, as demonstrated through the observation of Landau-Zener-Stückelberg interference. The long-range coupling significantly improves the prospects of fault-tolerant quantum computation using quantum dot arrays and opens up new avenues for performing quantum simulations in nanoscale devices.

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preprint2013arXiv

Photon- and phonon-assisted tunneling in the three-dimensional charge stability diagram of a triple quantum dot array

We report both photon- and phonon-assisted tunneling transitions in a linear array of three quantum dots, which can only be understood by considering the full three-dimensionality of the charge stability diagram. Such tunneling transitions potentially contribute to leakage of qubits defined in this system. A detailed understanding of these transitions is important as they become more abundant and complex to analyze as quantum dot arrays are scaled up.

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preprint2013arXiv

Remote sensor response study in the regime of the microwave radiation-induced magnetoresistance oscillations

A concurrent remote sensing and magneto-transport study of the microwave excited two dimensional electron system (2DES) at liquid Helium temperatures has been carried out using a carbon detector to remotely sense the microwave activity of the 2D electron system in the GaAs/AlGaAs heterostructure during conventional magnetotransport measurements. Various correlations are observed and reported between the oscillatory magnetotransport and the remotely sensed reflection. In addition, the oscillatory remotely sensed signal is shown to exhibit a power law type variation in its amplitude, similar to the radiation-induced magnetoresistance oscillations.

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preprint2013arXiv

Remotely sensed transport in microwave photoexcited GaAs/AlGaAs two-dimensional electron system

We demonstrate a strong correlation between the magnetoresistive and the concurrent microwave reflection from the microwave photo-excited GaAs/AlGaAs two-dimensional electron system (2DES). These correlations are followed as a function of the microwave power, the microwave frequency, and the applied current. Notably, the character of the reflection signal remains unchanged even when the current is switched off in the GaAs/AlGaAs Hall bar specimen. The results suggest a perceptible microwave-induced change in the electronic properties of the 2DES, even in the absence of an applied current.

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preprint2013arXiv

Single-electron Double Quantum Dot Dipole-coupled to a Single Photonic Mode

We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two entities manifests itself via dispersive and dissipative effects observed as frequency shifts and linewidth broadenings of the photonic mode respectively. A Jaynes-Cummings Hamiltonian master equation calculation is used to model the combined system response and allows for determining both the coherence properties of the double quantum dot and its interdot tunnel coupling with high accuracy. The value and uncertainty of the tunnel coupling extracted from the microwave read-out technique are compared to a standard quantum point contact charge detection analysis. The two techniques are found to be consistent with a superior precision for the microwave experiment when tunneling rates approach the resonator eigenfrequency. Decoherence properties of the double dot are further investigated as a function of the number of electrons inside the dots. They are found to be similar in the single-electron and many-electron regimes suggesting that the density of the confinement energy spectrum plays a minor role in the decoherence rate of the system under investigation.

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preprint2013arXiv

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation lead to a bulk resistance over 1 MΩ. This resistance was found to be independent of applied magnetic fields. Ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

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preprint2013arXiv

Tunable Charge Detectors for Semiconductor Quantum Circuits

Nanostructures defined in high-mobility two-dimensional electron systems offer a unique way of controlling the microscopic details of the investigated device. Quantum point contacts play a key role in these investigations, since they are not only a research topic themselves, but turn out to serve as convenient and powerful detectors for their electrostatic environment. We investigate how the sensitivity of charge detectors can be further improved by reducing screening, increasing the capacitive coupling between charge and detector and by tuning the quantum point contacts' confinement potential into the shape of a localized state. We demonstrate the benefits of utilizing a localized state by performing fast and well-resolved charge detection of a large quantum dot in the quantum Hall regime.

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preprint2012arXiv

Enlarged magnetic focusing radius of photoinduced ballistic currents

We exploit GaAs-based quantum point contacts as mesoscopic detectors to analyze the ballistic flow of photogenerated electrons in a two-dimensional electron gas at a perpendicular magnetic field. Whereas charge transport experiments always measure the classical cyclotron radius, we show that this changes dramatically when detecting the photoinduced non-equilibrium current in magnetic fields. The experimentally determined radius of the trajectories surprisingly exceeds the classical cyclotron value by far. Monte Carlo simulations suggest electron-electron scattering as the underlying reason.

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preprint2012arXiv

Large nuclear spin polarization in gate-defined quantum dots using a single-domain nanomagnet

The electron-nuclei (hyperfine) interaction is central to spin qubits in solid state systems. It can be a severe decoherence source but also allows dynamic access to the nuclear spin states. We study a double quantum dot exposed to an on-chip single-domain nanomagnet and show that its inhomogeneous magnetic field crucially modifies the complex nuclear spin dynamics such that the Overhauser field tends to compensate external magnetic fields. This turns out to be beneficial for polarizing the nuclear spin ensemble. We reach a nuclear spin polarization of ~50%, unrivaled in lateral dots, and explain our manipulation technique using a comprehensive rate equation model.

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preprint2012arXiv

Ultrastrong coupling of the cyclotron transition of a two-dimensional electron gas to a THz metamaterial

Artificial cavity photon resonators with ultrastrong light-matter interactions are attracting interest both in semiconductor and superconducting systems, due to the possibility of manipulating the cavity quantum electrodynamic ground state with controllable physical properties. We report here experiments showing ultrastrong light-matter coupling in a terahertz metamaterial where the cyclotron transition of a high mobility two-dimensional electron gas is coupled to the photonic modes of an array of electronic split-ring resonators. We observe a normalized coupling ratio $\fracΩ{ω_c}=0.58$ between the vacuum Rabi frequency $Ω$ and the cyclotron frequency $ω_c$. Our system appears to be scalable in frequency and could be brought to the microwave spectral range with the potential of strongly controlling the magnetotransport properties of a high-mobility 2DEG.

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preprint2011arXiv

Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system

Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation-doped InAs quantum wells, which reveal a magnetic field driven and bias voltage dependent insulator-to-metal transition with abrupt and hysteretic changes of resistance over several orders of magnitude. These phenomena coexist with the quantised Hall effect in high magnetic fields. We show that the exchange coupling between a hole and the parent Mn acceptor produces a magnetic anisotropy barrier that shifts the spin relaxation time of the bound hole to a 100 s range in compressively strained quantum wells. This bistability of the individual Mn acceptors explains the hysteretic behaviour while opening prospects for information storing and processing. At high bias voltage another bistability, caused by the overheating of electrons10, gives rise to abrupt resistance jumps.

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preprint2011arXiv

Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the concept of the effective magnetic field, usually used to describe ferromagnetic resonance phenomena. The nanowires we investigate exhibit a uniaxial anisotropy which is approximately 5 times larger than the strain induced anisotropy observed in lithographically prepared (Ga,Mn)As stripes.

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preprint2011arXiv

Spatial mapping and manipulation of two tunnel-coupled quantum dots

The metallic tip of a scanning force microscope operated at 300 mK is used to locally induce a potential in a fully controllable double quantum dot defined via local anodic oxidation in a GaAs/AlGaAs heterostructure. Using scanning gate techniques we record spatial images of the current through the sample for different numbers of electrons on the quantum dots (i.e., for different quantum states). Owing to the spatial resolution of current maps, we are able to determine the spatial position of the individual quantum dots, and investigate their apparent relative shifts due to the voltage applied to a single gate.

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preprint2011arXiv

Tunable Non-local Coupling between Kondo Impurities

We study the tuning mechanisms of the Ruderman-Kittel-Kasuya-Yosida (RKKY) exchange interaction between two lateral quantum dots in the Kondo regime. At zero magnetic field we observe the expected splitting of the Kondo resonance and measure the RKKY interaction strength J as a function of the asymmetry between the two Kondo temperatures. At finite magnetic fields a chiral coupling between the quantum dots is observed in the Kondo chessboard and we probe the presence of the exchange interaction by analyzing the Kondo temperature with magnetic field.

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preprint2010arXiv

An in-situ tunable radio-frequency quantum point contact

Incorporating a variable capacitance diode into a radio-frequency matching circuit allows us to in-situ tune the resonance frequency of an RF quantum point contact, increasing the versatility of the latter as a fast charge sensor of a proximal quantum circuit. The performance of this method is compared in detail to conventional low-frequency charge detection. The approach is also applicable to other RF-detection schemes, such as RF-SET circuits.

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preprint2010arXiv

Imaging ellipsometry of graphene

Imaging ellipsometry studies of graphene on SiO2/Si and crystalline GaAs are presented. We demonstrate that imaging ellipsometry is a powerful tool to detect and characterize graphene on any flat substrate. Variable angle spectroscopic ellipsometry is used to explore the dispersion of the optical constants of graphene in the visible range with high lateral resolution. In this way the influence of the substrate on graphene's optical properties can be investigated

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preprint2010arXiv

Long exciton spin memory in coupled quantum wells

Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time resolved photoluminescence. A strong degree of circular polarization (> 50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state. The indirect transition remained polarized several tens of nanoseconds after the pumping laser pulse, demonstrating directly a very long relaxation time of exciton spin. The observed spin memory effect exceeds the radiative lifetime of the indirect excitons.

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preprint2010arXiv

Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs

The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR) and magnetooptical effects. Experimental results are described considering cubic and two kinds of uniaxial magnetic anisotropy. The magnitude of cubic and uniaxial anisotropy constants is found to be proportional to the fourth and second power of saturation magnetization, respectively. Similarly to the case of (001) samples, the spin reorientation transition from uniaxial anisotropy with the easy along the [-1, 1, 0] direction at high temperatures to the biaxial <100> anisotropy at low temperatures is observed around 25 K. The determined values of the anisotropy constants have been confirmed by FMR studies. As evidenced by investigations of the polar magnetooptical Kerr effect, the particular combination of magnetic anisotropies allows the out-of-plane component of magnetization to be reversed by an in-plane magnetic field. Theoretical calculations within the p-d Zener model explain the magnitude of the out-of-plane uniaxial anisotropy constant caused by epitaxial strain, but do not explain satisfactorily the cubic anisotropy constant. At the same time the findings point to the presence of an additional uniaxial anisotropy of unknown origin. Similarly to the case of (001) films, this additional anisotropy can be explained by assuming the existence of a shear strain. However, in contrast to the (001) samples, this additional strain has an out-of-the-(001)-plane character.

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preprint2010arXiv

Temperature dependence of the visibility in an electronic Mach-Zehnder interferometer

We performed the conductance and the shot noise measurements in an electronic Mach-Zehnder interferometer. The visibility of the interference is investigated as a function of the electron temperature that is derived from the thermal noise of the interferometer. The non-equilibrium noise displays both h/e and h/2e oscillations vs. the modulation gate voltage.

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preprint2009arXiv

Transport through (Ga,Mn)As nanoislands: Coulomb-blockade and temperature dependence of the conductance

We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements down to the millikelvin range we compare the models currently used to describe transport through (Ga,Mn)As nanoconstrictions. We provide an explanation for the observed spin-valve like behavior during a magnetic field sweep by means of the magnetization configurations in the device. Furthermore, we prove that Coulomb-blockade plays a decisive role for the transport mechanism and show that modeling the constriction as a granular metal describes the temperature and bias dependence of the conductance correctly and allows to estimate the number of participating islands located in the constriction.

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preprint2009arXiv

Tunneling Anisotropic Spin Polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

We report here on anisotropy of spin polarization obtained in lateral all-semiconductor all-electrical spin injection devices, employing $p^{+}-$(Ga,Mn)As/$n^{+}-$GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of $~8%$ in case of spins oriented either along $[1\bar{1}0]$ or $[110]$ directions and $~25%$ anisotropy between in-plane and perpendicular-to-plane orientation of spins.

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preprint2008arXiv

Electrical spin injection and detection in lateral all-semiconductor devices

Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. The conversion of spin-polarized holes into spin-polarized electrons via Esaki tunnelling leaves its mark in a bias dependence of the spin-injection efficiency, which at maximum reaches the relatively high value of 50%.

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preprint2006arXiv

Zero-bias spin separation

Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current, or the reverse process, in which an electrical current generates a nonequilibrium spin polarization, are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. The spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by Rashba or Dresselhaus spin splitting of the band structure (intrinsic spin Hall effect). Here we provide evidence for an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect. In contrast to the spin Hall effect it does not require an electric current to flow: It is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. We show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium up to room temperature. Moreover the experimental results give evidence that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of nonequilibrium carriers.

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