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Thomas Ihn

Thomas Ihn appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.str-elphysics.comp-ph

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Published work

56 published item(s)

preprint2022arXiv

Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots

Pauli blockade mechanisms -- whereby carrier transport through quantum dots is blocked due to selection rules even when energetically allowed -- are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with additional degrees of freedom, such as the valley quantum numbers in carbon-based materials or silicon. Here we report experiments on coupled bilayer graphene double quantum dots, in which the spin and valley states are precisely controlled, enabling the observation of the two-electron combined blockade physics. We demonstrate that the doubly occupied single dot switches between two different ground states with gate and magnetic-field tuning, allowing for the switching of selection rules: with a spin-triplet--valley-singlet ground state, valley-blockade is observed; and with the spin-singlet--valley-triplet ground state, robust spin blockade is shown.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fabry-Pérot cavities and quantum dot formation at gate-defined interfaces in twisted double bilayer graphene

The rich and electrostatically tunable phase diagram exhibited by moiré materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and localization across electrostatically defined interfaces is of fundamental importance. Little is known, however, about how the interplay between the band structure originating from the moiré lattice and electric potential gradients affects electronic confinement. Here, we electrostatically define a cavity across a twisted double bilayer graphene sample. We observe two kinds of Fabry-Pérot oscillations. The first, independent of charge polarity, stems from confinement of electrons between dispersive-band/flat-band interfaces. The second arises from junctions between regions tuned into different flat bands. When tuning the out-of-plane electric field across the device, we observe Coulomb blockade resonances in transport, an indication of strong electronic confinement. From the gate, magnetic field and source-drain voltage dependence of the resonances, we conclude that quantum dots form at the interfaces of the Fabry-Pérot cavity. Our results constitute a first step towards better understanding interfacial phenomena in single crystal moiré devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Kondo effect and spin-orbit coupling in graphene quantum dots

The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - remain rare. Here we report the observation of fully screened and underscreened Kondo effects in quantum dots in bilayer graphene. More generally, we introduce a unique platform for studying Kondo physics. In contrast to carbon nanotubes, whose curved surfaces give rise to strong spin-orbit coupling breaking the SU(4) symmetry of the electronic states relevant for the Kondo effect, we study a nominally flat carbon material with small spin-orbit coupling. Moreover, the unusual two-electron triplet ground state in bilayer graphene dots provides a route to exploring the underscreened spin-1 Kondo effect.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Observation of quantum Hall interferometer phase jumps due to changing quasiparticle number

We measure the magneto-conductance through a micron-sized quantum dot hosting about 500 electrons in the quantum Hall regime. In the Coulomb blockade, when the island is weakly coupled to source and drain contacts, edge reconstruction at filling factors between one and two in the dot leads to the formation of two compressible regions tunnel coupled via an incompressible region of filling factor $ν=1$. We interpret the resulting conductance pattern in terms of a phase diagram of stable charge in the two compressible regions. Increasing the coupling of the dot to source and drain, we realize a Fabry-Pérot quantum Hall interferometer, which shows an interference pattern strikingly similar to the phase diagram in the Coulomb blockade regime. We interpret this experimental finding using an empirical model adapted from the Coulomb blockaded to the interferometer case. The model allows us to relate the observed abrupt jumps of the Fabry-Pérot interferometer phase to a change in the number of bulk quasiparticles. This opens up an avenue for the investigation of phase shifts due to (fractional) charge redistributions in future experiments on similar devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Scattering between minivalleys in a moiré material

A unique feature of the complex band structures of moiré materials is the presence of minivalleys, their hybridization, and scattering between them. Here we investigate magneto-transport oscillations caused by scattering between minivalleys - a phenomenon analogous to magneto-intersubband oscillations - in a twisted double bilayer graphene sample with a twist angle of 1.94°. We study and discuss the potential scattering mechanisms and find an electron-phonon mechanism and valley conserving scattering to be likely. Finally, we discuss the relevance of our findings for different materials and twist angles.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Single-shot readout in graphene quantum dots

Electrostatically defined quantum dots in bilayer graphene offer a promising platform for spin qubits with presumably long coherence times due to low spin-orbit coupling and low nuclear spin density. We demonstrate two different experimental approaches to measure the decay times of excited states. The first is based on direct current measurements through the quantum device. Pulse sequences are applied to control the occupation of ground and excited states. We observe a lower bound for the excited state decay on the order of hundred microseconds. The second approach employs a capacitively coupled charge sensor to study the time dynamics of the excited state using the Elzerman technique. We find that the relaxation time of the excited state is of the order of milliseconds. We perform single-shot readout of our two-level system with a visibility of $87.1\%$, which is an important step for developing a quantum information processor in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic g-factor and Magneto-transport in InSb Quantum Wells

High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of $m^*\approx0.017 m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas

Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the few-electron regime, where we observe a clear Kondo effect and singlet-triplet spin blockade. We measure an electronic $g$-factor of $16$ and a typical magnitude of the random hyperfine fields on the dots of $\sim 0.6\, \mathrm{mT}$. We estimate the spin-orbit length in the system to be $\sim 5-10\, μ\mathrm{m}$, which is almost two orders of magnitude longer than typically measured in InAs nanostructures, achieved by a very symmetric design of the quantum well. These favorable properties put the InAs 2DEG on the map as a compelling host for studying fundamental aspects of spin qubits. Furthermore, having weak spin-orbit coupling in a material with a large Rashba coefficient potentially opens up avenues for engineering structures with spin-orbit coupling that can be controlled locally in space and/or time.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Realization of a $CQ_3$ Qubit: energy spectroscopy and coherence

The energy landscape of a single electron in a triple quantum dot can be tuned such that the energy separation between ground and excited states becomes a flat function of the relevant gate voltages. These so-called sweet spots are beneficial for charge coherence, since the decoherence effects caused by small fluctuations of gate voltages or surrounding charge fluctuators are minimized. We propose a new operation point for a triple quantum dot charge qubit, a so-called $CQ_3$-qubit, having a third order sweet spot. We show strong coupling of the qubit to single photons in a frequency tunable high-impedance SQUID-array resonator. In the dispersive regime we investigate the qubit linewidth in the vicinity of the proposed operating point. In contrast to the expectation for a higher order sweet spot, we there find a local maximum of the linewidth. We find that this is due to a non-negligible contribution of noise on the quadrupolar detuning axis not being in a sweet spot at the proposed operating point. While the original motivation to realize a low-decoherence charge qubit was not fulfilled, our analysis provides insights into charge decoherence mechanisms relevant also for other qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Scanning Gate Microscopy of Localized States in a gate-defined Bilayer Graphene Channel

We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance under the influence of a local tip-induced potential, we observe ellipses of enhanced conductance as a function of the tip position. These ellipses allow us to infer the location of the localized states and to study their dependence on the displacement field. For large displacement fields, we observe that localized states tend to occur halfway into the channel. All our observations can be well explained within the framework of stochastic Coulomb blockade.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts

In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the energy spectrum of a quantum point contact realized by a suitable gate geometry in bilayer graphene. Using finite bias spectroscopy we measure the energy scales arising from the lateral confinement as well as the Zeeman splitting and find a spin g-factor of 2. The valley g-factor can be tuned by a factor of 3 using vertical electric fields, reaching values between 40 and 120. The results are quantitatively explained by a calculation considering topological magnetic moment and its dependence on confinement and the vertical displacement field.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Automated tuning of double quantum dots into specific charge states using neural networks

While quantum dots are at the forefront of quantum device technology, tuning multi-dot systems requires a lengthy experimental process as multiple parameters need to be accurately controlled. This process becomes increasingly time-consuming and difficult to perform manually as the devices become more complex and the number of tuning parameters grows. In this work, we present a crucial step towards automated tuning of quantum dot qubits. We introduce an algorithm driven by machine learning that uses a small number of coarse-grained measurements as its input and tunes the quantum dot system into a pre-selected charge state. We train and test our algorithm on a GaAs double quantum dot device and we consistently arrive at the desired state or its immediate neighborhood.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer

Electron optics in the solid state promises new functionality in electronics through the possibility of realizing micrometer-sized interferometers, lenses, collimators and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p-n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-Pérot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p-n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics to encompass materials that exhibit band inversion and hybridization, with the promise to surpass the performance of current state-of-the-art devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Fully automated identification of 2D material samples

Thin nanomaterials are key constituents of modern quantum technologies and materials research. Identifying specimens of these materials with properties required for the development of state of the art quantum devices is usually a complex and lengthy human task. In this work we provide a neural-network driven solution that allows for accurate and efficient scanning, data-processing and sample identification of experimentally relevant two-dimensional materials. We show how to approach classification of imperfect imbalanced data sets using an iterative application of multiple noisy neural networks. We embed the trained classifier into a comprehensive solution for end-to-end automatized data processing and sample identification.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Gap Opening in Twisted Double Bilayer Graphene by Crystal fields

Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to the planes. It has been realized recently that twisted graphene multilayers provide powerful playgrounds to engineer electronic properties by the number of layers, the twist angle, applied electric biases, electronic interactions and elastic relaxations, but crystal fields have not received the attention they deserve. Here we show that the bandstructure of large-angle twisted double bilayer graphene is strongly modified by crystal fields. In particular, we experimentally demonstrate that twisted double bilayer graphene, encapsulated between hBN layers, exhibits an intrinsic bandgap. By the application of an external field, the gaps in the individual bilayers can be closed, allowing to determine the crystal fields. We find that crystal fields point from the outer to the inner layers with strengths in the bottom (top) bilayer of -0.13 V/nm (0.12 V/nm). We show both by means of first principles calculations and low energy models that crystal fields open a band gap in the groundstate. Our results put forward a physical scenario in which a crystal field effect in carbon substantially impacts the low energy properties of twisted double bilayer graphene, suggesting that such contributions must be taken into account in other regimes to faithfully predict the electronic properties of twisted graphene multilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Phonon spectral density in a GaAs/AlGaAs double quantum dot

We study phonon emission in a GaAs/AlGaAs double quantum dot by monitoring the tunneling of a single electron between the two dots. We prepare the system such that a known amount of energy is emitted in the transition process. The energy is converted into lattice vibrations and the resulting tunneling rate depends strongly on the phonon scattering and its effective phonon spectral density. We are able to fit the measured transition rates and see imprints of interference of phonons with themselves causing oscillations in the transition rates.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

The Electronic Thickness of Graphene

The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and K' points of the two layers. We observe a splitting of the zero-density lines of the two layers with increasing interlayer energy difference. This splitting is given by the ratio of single-layer quantum capacitance over interlayer capacitance C and is therefore suited to extract C. We explain the large observed value of C by considering the finite dielectric thickness d of each graphene layer and determine d=2.6 Angstrom. In a second experiment we map out the entire density range with a Fabry-Pérot resonator. We can precisely measure the Fermi-wavelength in each layer, showing that the layers are decoupled. We find that the Fermi wavelength exceeds 600nm at the lowest densities and can differ by an order of magnitude between the upper and lower layer. These findings are reproduced using tight-binding calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells

Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and compare it with another sample in the non-inverted semiconducting regime. Activated behavior in conjunction with a strong suppression of the resistance peak at the charge neutrality point in a parallel magnetic field attest to the topological hybridization gap between electron and hole bands in the inverted sample. We observe an unconventional Landau level spectrum with energy gaps modulated by the magnetic field applied perpendicular to the quantum wells. This is caused by strong spin-orbit interaction provided jointly by the InAs and the GaSb quantum wells.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Investigating Energy Scales of Fractional Quantum Hall States using Scanning Gate Microscopy

We use the voltage biased tip of a scanning force microscope at a temperature of 35\,mK to locally induce the fractional quantum Hall state of $ν=1/3$ in a split-gate defined constriction. Different tip positions allow us to vary the potential landscape. From temperature dependence of the conductance plateau at $G=1/3 \times e^2/h$ we determine the activation energy of this local $ν=1/3$ state. We find that at a magnetic field of 6\,T the activation energy is between 153\,$μ$eV and 194\,$μ$eV independent of the shape of the confining potential, but about 50\% lower than for bulk samples.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measurement back-action in stacked graphene quantum dots

We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher order quantum mechanical back-action mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measuring the degeneracy of discrete energy levels using a GaAs/AlGaAs quantum dot

We demonstrate an experimental method for measuring quantum state degeneracies in bound state energy spectra. The technique is based on the general principle of detailed balance, and the ability to perform precise and efficient measurements of energy-dependent tunnelling-in and -out rates from a reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for the detection of time-resolved single-electron tunnelling with a precision enhanced by a feedback-control. It is thoroughly tested by tuning orbital and spin-degeneracies with electric and magnetic fields. The technique also lends itself for studying the connection between the ground state degeneracy and the lifetime of the excited states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Non-local polarization feedback in a fractional quantum Hall ferromagnet

In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a non-local effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a $ν=2/3$ fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Band gap and broken chirality in single-layer and bilayer graphene

Chirality is one of the key features governing the electronic properties of single- and bilayer graphene: the basics of this concept and its consequences on transport are presented in this review. By breaking the inversion symmetry, a band gap can be opened in the band structures of both systems at the K-point. This leads to interesting consequences for the pseudospin and, therefore, for the chirality. These consequences can be accessed by investigating the evolution of the Berry phase in such systems. Experimental observations of Fabry-Perot interference in a dual-gated bilayer graphene device are finally presented and are used to illustrate the role played by the band gap on the evolution of the pseudospin. The presented results can be attributed to the breaking of the chirality in the energy range close to the gap.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Capacitive coupling in hybrid Graphene-GaAs nanostructures

Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the surface of the heterostructure and therefore allows tuning the electronic density of the 2DEG. Conversely, the 2DEG potential can tune the graphene Fermi energy. Graphene-defined quantum point contacts in the 2DEG show half-plateaus of quantized conductance in finite bias spectroscopy and display the 0.7 anomaly for a large range of densities in the constriction, testifying to their good electronic properties. Finally, we demonstrate that the GaAs nanostructure can detect charges in the vicinity of the heterostructure's surface. This confirms the strong coupling of the hybrid device: localized states in the graphene ribbon could in principle be probed by the underlying confined channel. The present hybrid graphene/GaAs nanostructures are promising for the investigation of strong interactions and coherent coupling between the two fundamentally different materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Equilibrium free energy measurement of a confined electron driven out of equilibrium

We study out-of equilibrium properties of a quantum dot in a GaAs/AlGaAs two-dimensional electron gas. By means of single electron counting experiments, we measure the distribution of work and dissipated heat of the driven quantum dot and relate these quantities to the equilibrium free energy change, as it has been proposed by C. Jarzynski [Phys. Rev. Lett. {\bf78}, 2690 (1997)]. We discuss the influence of the degeneracy of the quantized energy state on the free energy change as well as its relation to the tunnel rates between the dot and the reservoir.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Generation and Detection of Spin Currents in Semiconductor Nanostructures with Strong Spin-Orbit Interaction

Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the different platforms proposed so far, semiconductors with strong spin-orbit interaction are especially attractive as they promise fast and scalable spin control with all-electrical protocols. Here we demonstrate both the generation and measurement of pure spin currents in semiconductor nanostructures. Generation is purely electrical and mediated by the spin dynamics in materials with a strong spin-orbit field. Measurement is accomplished using a spin-to-charge conversion technique, based on the magnetic field symmetry of easily measurable electrical quantities. Calibrating the spin-to-charge conversion via the conductance of a quantum point contact, we quantitatively measure the mesoscopic spin Hall effect in a multiterminal GaAs dot. We report spin currents of 174 pA, corresponding to a spin Hall angle of 34%.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Graphene nanoribbons: relevance of etching process

Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely oxygen plasma ashing and oxygen/argon reactive ion etching (RIE). Oxygen plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.

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preprint2015arXiv

Non-local transport via edge-states in InAs/GaSb coupled quantum wells

We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,μ$m in length down to a few $μ$m gradually develop a pronounced resistance plateau near charge-neutrality, which comes along with distinct non-local transport along the edges. Plateau resistances are found to be above or below the quantized value expected for helical edge channels. We discuss these results based on the interplay between imperfect edges and residual local bulk conductivity.

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preprint2015arXiv

Transport Spectroscopy of a Spin-Coherent Dot-Cavity System

Quantum engineering requires controllable artificial systems with quantum coherence exceeding the device size and operation time. This can be achieved with geometrically confined low-dimensional electronic structures embedded within ultraclean materials, with prominent examples being artificial atoms (quantum dots) and quantum corrals (electronic cavities). Combining the two structures, we implement a mesoscopic coupled dot-cavity system in a high-mobility two-dimensional electron gas, and obtain an extended spin-singlet state in the regime of strong dot-cavity coupling. Engineering such extended quantum states presents a viable route for nonlocal spin coupling that is applicable for quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunable Fermi surface topology and Lifshitz transition in bilayer graphene

Bilayer graphene is a highly tunable material: not only can one tune the Fermi energy using standard gates, as in single-layer graphene, but the band structure can also be modified by external perturbations such as transverse electric fields or strain. We review the theoretical basics of the band structure of bilayer graphene and study the evolution of the band structure under the influence of these two external parameters. We highlight their key role concerning the ease to experimentally probe the presence of a Lifshitz transition, which consists in a change of Fermi contour topology as a function of energy close to the edges of the conduction and valence bands. Using a device geometry that allows the application of exceptionally high displacement fields, we then illustrate in detail the way to probe the topology changes experimentally using quantum Hall effect measurements in a gapped bilayer graphene system.

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preprint2014arXiv

Anomalous sequence of quantum Hall liquids revealing tunable Lifshitz transition in bilayer graphene

Fermi surface topology plays an important role in determining the electronic properties of metals. In bulk metals, the Fermi energy is not easily tunable at the energy scale needed for reaching conditions for the Lifshitz transition - a singular point in the band structure where the connectivity of the Fermi surface changes. Bilayer graphene is a unique system where both Fermi energy and the low-energy electron dispersion can be tuned using the interplay between trigonal warping and a band gap opened by a transverse electric field. Here, we drive the Lifshitz transition to experimentally controllable carrier densities by applying large transverse electric fields through a h-BN-encapsulated bilayer graphene structure, and detect it by measuring the degeneracies of Landau levels. These degeneracies are revealed by filling factor -3 and -6 quantum Hall effect states of holes at low magnetic fields reflecting the existence of three maxima on the top of the valence band dispersion. At high magnetic fields all integer quantum Hall states are observed, indicating that deeper in the valence band the constant energy contours are singly-connected. The fact that we observe ferromagnetic quantum Hall states at odd-integer filling factors testifies to the high quality of our sample, and this enables us to identify several phase transitions between correlated quantum Hall states at intermediate magnetic fields, in agreement with the calculated evolution of the Landau level spectrum.

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preprint2014arXiv

Characterization of spin-orbit interactions of GaAs heavy holes using a quantum point contact

We present transport experiments performed in high quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed anisotropic Zeeman splitting and level-dependent effective g-factors. Here we find additional effects, namely the crossing and the anti-crossing of spin-split levels depending on subband index and magnetic field direction. Our experimental observations are reconciled in an heavy hole effective spin-orbit Hamiltonian where cubic- and quadratic-in-momentum terms appear. The spin-orbit components, being of great importance for quantum computing applications, are characterized in terms of magnitude and spin structure. In the light of our results, we explain the level dependent effective g-factor in an in-plane field. Through a tilted magnetic field analysis, we show that the QPC out-of-plane g-factor saturates around the predicted 7.2 bulk value.

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preprint2014arXiv

Characterizing wave functions in graphene nanodevices: electronic transport through ultrashort graphene constrictions on a boron nitride substrate

We present electronic transport measurements through short and narrow (30x30 nm) single layer graphene constrictions on a hexagonal boron nitride substrate. While the general observation of Coulomb-blockade is compatible with earlier work, the details are not: we show that the area on which charge is localized can be significantly larger than the area of the constriction, suggesting that the localized states responsible for Coulomb-blockade leak out into the graphene bulk. The high bulk mobility of graphene on hexagonal boron nitride, however, seems not consistent with the short bulk localization length required to see Coulomb-blockade. To explain these findings, charge must instead be primarily localized along the imperfect edges of the devices and extend along the edge outside of the constriction. In order to better understand the mechanisms, we compare the experimental findings with tight-binding simulations of such constrictions with disordered edges. Finally we discuss previous experiments in the light of these new findings.

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preprint2014arXiv

Electronic triple-dot transport through a bilayer graphene island with ultrasmall constrictions

A quantum dot has been etched in bilayer graphene connected by two small constrictions to the leads. We show that this structure does not behave like a single quantum dot but consists of at least three sites of localized charge in series. The high symmetry and electrical stability of the device allowed us to triangulate the positions of the different sites of localized charge and find that one site is located in the island and one in each of the constrictions. Nevertheless we measure many consecutive single non-overlapping Coulomb-diamonds in series. In order to describe these findings, we treat the system as a strongly coupled serial triple quantum dot. We find that the non-overlapping Coulomb diamonds arise due to higher order cotunneling through the outer dots located in the constrictions. We extract all relevant capacitances, simulate the measured data with a capacitance model and discuss its implications on electrical transport.

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preprint2014arXiv

Evaluating charge noise acting on semiconductor quantum dots in the circuit quantum electrodynamics architecture

We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase ($I$) and the quadrature ($Q$) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of $8.5\times10^{-5} \mbox{e}/\sqrt{\mbox{Hz}}$. A low frequency $1/f$ type noise spectrum combined with a white noise level of $6.6\times10^{-6}$ $\mbox{e}^2/\mbox{Hz}$ above $1$ Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope of the $1/f$ noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.

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preprint2014arXiv

Experimental probe of topological orders and edge excitations in the second Landau level

We measure weak quasiparticle tunneling across a constriction in the second Landau level. At $ν$ = 7/3, 8/3 and 5/2, comparison of temperature and DC bias dependence to weak tunneling theory allows extracting parameters that describe the edges' quasiparticle excitations. At $ν$ = 8/3, our results are well described by a particle-hole conjugate Laughlin state, but not compatible with proposed non-Abelian quasiparticle excitations. For $ν$ = 5/2, our measurements are in good agreement with previous experiments and favor the Abelian (3,3,1) or (1,1,3)-states. At these filling factors, we further investigate the influence of the backscattering strength on the extracted scaling parameters. For $ν$ = 7/3, the backscattering strength strongly affects the scaling parameters, whereas quasiparticle tunneling at $ν$ = 8/3 and 5/2 appears more robust. Our results provide important additional insight about the physics in the second Landau level and contribute to the understanding of the physics underlying the fractional quantum Hall states at $ν$ = 7/3, 8/3 and 5/2.

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preprint2014arXiv

Fabry-Pérot interference in gapped bilayer graphene with broken anti-Klein tunneling

We report the experimental observation of Fabry-Pérot (FP) interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene (BLG) device. The high quality of the BLG flake, combined with the device's electrical robustness provided by the encapsulation between two hexagonal boron nitride layers, allows us to observe ballistic phase-coherent transport through a $1$μm-long cavity. We confirm the origin of the observed interference pattern by comparing to tight-binding calculations accounting for the gate-tunable bandgap. The good agreement between experiment and theory, free of tuning parameters, further verifies that a gap opens in our device. The gap is shown to destroy the perfect reflection for electrons traversing the barrier with normal incidence (anti-Klein tunneling). The broken anti-Klein tunneling implies that the Berry phase, which is found to vary with the gate voltages, is always involved in the FP oscillations regardless of the magnetic field, in sharp contrast with single-layer graphene.

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preprint2014arXiv

Finite bias spectroscopy of a three-terminal graphene quantum dot in the multi-level regime

Finite bias spectroscopy measurements of a three-terminal graphene quantum dot are presented. Numerous lines of enhanced differential conductance are observed outside the Coulomb diamonds. In the single-level transport regime such lines are often associated with transport through excited states. Here the system is in the multi-level transport regime. We argue that the lines are most likely a result of strong coupling to only a few of the excited states available in the bias window. We also discuss the option that fluctuations of the density of states in the leads are fully or partly responsible for the appearance of the lines. Such a detailed analysis requires the presence of three leads to the dot.

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preprint2014arXiv

Increasing the ν = 5 / 2 gap energy: an analysis of MBE growth parameters

The fractional quantized Hall state (FQHS) at the filling factor ν = 5/2 is of special interest due to its possible application for quantum computing. Here we report on the optimization of growth parameters that allowed us to produce two-dimensional electron gases (2DEGs) with a 5/2 gap energy up to 135 mK. We concentrated on optimizing the MBE growth to provide high 5/2 gap energies in "as-grown" samples, without the need to enhance the 2DEGs properties by illumination or gating techniques. Our findings allow us to analyse the impact of doping in narrow quantum wells with respect to conventional DX-doping in AlxGa1-xAs. The impact of the setback distance between doping layer and 2DEG was investigated as well. Additionally, we found a considerable increase in gap energy by reducing the amount of background impurities. To this end growth techniques like temperature reductions for substrate and effusion cells and the reduction of the Al mole fraction in the 2DEG region were applied.

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preprint2014arXiv

Spectroscopy of Equilibrium and Non-Equilibrium Charge Transfer in Semiconductor Quantum Structures

We investigate equilibrium and non-equilibrium charge-transfer processes by performing high-resolution transport spectroscopy. Using electrostatically defined quantum dots for energy-selective emission and detection, we achieved unprecedented spectral resolution and a high degree of tunability of relevant experimental parameters. Most importantly, we observe that the spectral width of elastically transferred electrons can be substantially smaller than the linewidth of a thermally broadened Coulomb peak. This finding indicates that the charge-transfer process is fast compared to the electron--phonon interaction time. By drawing an analogy to double quantum dots, we argue that the spectral width of the elastic resonance is determined by the lifetime broadening $h\itΓ$ of the emitter and detector states. Good agreement with the model is found also in an experiment in which the charge transfer is in the regime $h\itΓ\gg k_{\rm{B}}T$. By performing spectroscopy below the Fermi energy, we furthermore observe elastic and inelastic transfer of holes.

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preprint2014arXiv

Spin-orbit splitting and effective masses in p-type GaAs two-dimensional hole gases

We present magnetotransport measurements performed on two-dimensional hole gases embedded in carbon doped p-type GaAs/AlGaAs heterostructures grown on [001] oriented substrates. A pronounced beating pattern in the Shubnikov-de Haas oscillations proves the presence of strong spin-orbit interaction in the device under study. We estimate the effective masses of spin-orbit split subbands by measuring the temperature dependence of the Shubnikov-de Haas oscillations at different hole densities. While the lighter heavy-hole effective mass is not energy dependent, the heavier heavy-hole effective mass has a prominent energy dependence, indicating a strong spin-orbit induced non parabolicity of the valence band. The measured effective masses show qualitative agreement with self-consistent numerical calculations.

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preprint2014arXiv

Ultra-narrow ionization resonances in a quantum dot under broadband excitation

Semiconductor quantum dots driven by the broadband radiation fields of nearby quantum point contacts provide an exciting new setting for probing dynamics in driven quantum systems at the nanoscale. We report on real-time charge-sensing measurements of the dot occupation, which reveal sharp resonances in the ionization rate as a function of gate voltage and applied magnetic field. Despite the broadband nature of excitation, the resonance widths are much smaller than the scale of thermal broadening. We show that such resonant enhancement of ionization is not accounted for by conventional approaches relying on elastic scattering processes, but can be explained via a mechanism based on a bottleneck process that is relieved near excited state level crossings. The experiment thus reveals a new regime of a strongly driven quantum dynamics in few-electron systems. The theoretical results are in good agreement with observations.

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preprint2013arXiv

A circuit analysis of an in situ tunable radio-frequency quantum point contact

A detailed analysis of the tunability of a radio-frequency quantum point contact setup using a C-LCR circuit is presented. We calculate how the series capacitance influences resonance frequency and charge-detector resistance for which matching is achieved as well as the voltage and power delivered to the load. Furthermore, we compute the noise contributions in the system and compare our findings with measurements taken with an etched quantum point contact. While our considerations mostly focus on our specific choice of matching circuit, the discussion of the influence of source-to-load power transfer on the signal-to-noise ratio is valid generally.

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preprint2013arXiv

Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties

We present low-temperature transport experiments on Aharonov-Bohm (AB) rings fabricated from two-dimensional hole gases in p-type GaAs/AlGaAs heterostructures. Highly visible h/e (up to 15%) and h/2e oscillations, present for different gate voltages, prove the high quality of the fabricated devices. Like in previous work, a clear beating pattern of the h/e and h/2e oscillations is present in the magnetoresistance, producing split peaks in the Fourier spectrum. The magnetoresistance evolution is presented and discussed as a function of temperature and gate voltage. It is found that sample specific properties have a pronounced influence on the observed behavior. For example, the interference of different transverse modes or the interplay between h/e oscillations and conductance fluctuations can produce the features mentioned above. In previous work they have occasionally been interpreted as signatures of spin-orbit interaction (SOI)-induced effects. In the light of these results, the unambiguous identification of SOI-induced phase effects in AB rings remains still an open and challenging experimental task.

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preprint2013arXiv

Cyclic Depopulation of Edge States in a large Quantum Dot

We investigate magneto-transport through a 1.6 μm wide quantum dot (QD) with adjacent charge detector, for different integer filling factors in the QD and constrictions. When this system is operated as a Fabry-Pérot interferometer, transport is governed by a Coulomb blockade mechanism. In the tunneling regime, we can directly measure the charge stability diagram of two capacitively and tunnel coupled Landau levels. This situation has been investigated in direct transport, as well as in single electron counting. The edge states within the dot are non-cyclically depopulated, which can be explained by a simple capacitive model and allows to draw conclusions about the edge state geometry within the quantum dot.

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preprint2013arXiv

Imaging the Conductance of Integer and Fractional Quantum Hall Edge States

We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of the conductance as a function of tip position at integer (ν=1,2,3,4,6,8) and fractional (ν=1/3,2/3,5/3,4/5) values of transmission. They resemble theoretically predicted compressible and incompressible stripes of quantum Hall edge states. The scanning tip allows us to shift the constriction limiting the conductance in real space over distances of many microns. The resulting stripes of integer and fractional filling factors are rugged on the micron scale, i.e. on a scale much smaller than the zero-field elastic mean free path of the electrons. Our experiments demonstrate that microscopic inhomogeneities are relevant even in high-quality samples and lead to locally strongly fluctuating widths of incompressible regions even down to their complete suppression for certain tip positions. The macroscopic quantization of the Hall resistance measured experimentally in a non-local contact configuration survives in the presence of these inhomogeneities, and the relevant local energy scale for the ν=2 state turns out to be independent of tip position.

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preprint2013arXiv

Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime

We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced non-local resistance signal of almost similar magnitude. The co-existence of these two effects is reconciled in a model of counter-propagating and dissipative quantum Hall edge channels providing backscattering, shorted by a residual bulk conductivity.

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preprint2013arXiv

Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate

We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility and lower disorder density compared to devices fabricated on silicon dioxide substrate in agreement with previous findings. The transport characteristics of the reactive-ion-etched graphene nanoribbons on hexagonal boron nitride, however, appear to be very similar to those of ribbons on a silicon dioxide substrate. We perform a detailed study in order to highlight both similarities as well as differences. Our findings suggest that the edges have an important influence on transport in reactive ion-etched graphene nanodevices.

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preprint2013arXiv

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation lead to a bulk resistance over 1 MΩ. This resistance was found to be independent of applied magnetic fields. Ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

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preprint2013arXiv

Tunable Charge Detectors for Semiconductor Quantum Circuits

Nanostructures defined in high-mobility two-dimensional electron systems offer a unique way of controlling the microscopic details of the investigated device. Quantum point contacts play a key role in these investigations, since they are not only a research topic themselves, but turn out to serve as convenient and powerful detectors for their electrostatic environment. We investigate how the sensitivity of charge detectors can be further improved by reducing screening, increasing the capacitive coupling between charge and detector and by tuning the quantum point contacts' confinement potential into the shape of a localized state. We demonstrate the benefits of utilizing a localized state by performing fast and well-resolved charge detection of a large quantum dot in the quantum Hall regime.

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preprint2012arXiv

Counting statistics in an InAs nanowire quantum dot with a vertically coupled charge detector

A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as time-resolved charge detection experiments for electron flow through the quantum dot. We demonstrate that the Fano factor describing shot noise or time-correlations in single-electron transport depends in the theoretically expected way on the asymmetry of the tunneling barriers even in a regime where the thermal energy $k_\mathrm{B}T$ is comparable to the single-particle level spacing in the dot.

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preprint2011arXiv

Raman spectroscopy on etched graphene nanoribbons

We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G- and the 2D-lines scale linearly with the irradiated area and therefore with the width of the ribbons. We further give indications that the D- to G-line ratio can be used to gain information about the crystallographic orientation of the underlying graphene. Finally, we perform polarization angle dependent measurements to analyze the nanoribbon edge-regions.

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preprint2011arXiv

Spatial mapping and manipulation of two tunnel-coupled quantum dots

The metallic tip of a scanning force microscope operated at 300 mK is used to locally induce a potential in a fully controllable double quantum dot defined via local anodic oxidation in a GaAs/AlGaAs heterostructure. Using scanning gate techniques we record spatial images of the current through the sample for different numbers of electrons on the quantum dots (i.e., for different quantum states). Owing to the spatial resolution of current maps, we are able to determine the spatial position of the individual quantum dots, and investigate their apparent relative shifts due to the voltage applied to a single gate.

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preprint2010arXiv

An in-situ tunable radio-frequency quantum point contact

Incorporating a variable capacitance diode into a radio-frequency matching circuit allows us to in-situ tune the resonance frequency of an RF quantum point contact, increasing the versatility of the latter as a fast charge sensor of a proximal quantum circuit. The performance of this method is compared in detail to conventional low-frequency charge detection. The approach is also applicable to other RF-detection schemes, such as RF-SET circuits.

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preprint2009arXiv

Aharonov-Bohm effect in a side-gated graphene ring

We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of pi in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be well interpreted within existing models for 'dirty metals' giving a phase coherence length of the order of 1 micrometer at a temperature of 500mK.

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