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Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation lead to a bulk resistance over 1 MΩ. This resistance was found to be independent of applied magnetic fields. Ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

preprint2013arXivOpen access
Christophe CharpentierStefan FältChristian ReichlFabrizio NicheleAtindra Nath PalPatrick PietschThomas IhnKlaus EnsslinWerner Wegscheider
cond-mat.mes-hall
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Open access9 authors1 topic
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Christophe CharpentierStefan FältChristian ReichlFabrizio NicheleAtindra Nath PalPatrick PietschThomas IhnKlaus EnsslinWerner Wegscheider

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