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Weidong Luo

Weidong Luo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallComputational Complexitycond-mat.str-elmath-phmath.APmath.MPphysics.comp-phphysics.opticsquant-ph

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Published work

12 published item(s)

preprint2025arXiv

Interaction-Driven Chern Insulator at Zero Electric Field in ABCB-Stacked Tetralayer Graphene

ABCB-stacked tetralayer graphene, with intrinsic spontaneous polarization, offers a unique platform to explore electron correlation effects, whose interplay with spin-orbit coupling may engender topological phases. Here, employing a $\mathbf{k}\cdot\mathbf{p}$ model with self-consistent Hartree-Fock calculations, we investigate its electronic ground states. Remarkably, we find that the intrinsic polarization, in conjunction with strong interactions ($U=8 \text{ eV}$) and SOC, is sufficient to drive a $C=3$ quantum anomalous Hall state, obviating the need for an external electric field typical in ABCA stacks. Conversely, at moderate interactions ($U=6 \text{ eV}$), a minimal electric field is necessary. Furthermore, calculations predict other correlation-driven metallic phases such as quarter- and three-quarter-filled states. These results establish that the synergy of intrinsic polarization, correlations, and SOC governs the rich topological phenomena, suggesting ABCB-stacked graphene as a highly tunable platform for exploring emergent topological phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The Eigenvalue Problem of Nonlinear Schrödinger Equation at Dirac Points of Honeycomb Lattice

We give a rigorous deduction of the eigenvalue problem of the nonlinear Schrödinger equation (NLS) at Dirac Points for potential of honeycomb lattice symmetry. Based on a bootstrap method, we observe the bifurcation of the eigenfunctions into eight distinct modes from the two-dimensional degenerated eigenspace of the regressive linear Schrödinger equation. We give the existence, the way of construction, uniqueness in $H^2$ space and the $C^\infty$ continuity of these eigenfunctions.

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preprint2021arXiv

Coexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5

By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consistent with the first-principles calculations. On the other hand, PFM reveals a switchable ferroelectric-like polarization on the same surface. We propose that the noncentrosymmetric surface reconstruction observed by STM could be the origin of the observed ferroelectric-like state in this novel material. Our findings provide a new platform with the coexistence of ferroelectric-like surface charge distribution and novel surface states.

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preprint2020arXiv

Designer spin order in diradical nanographenes

The magnetic properties of carbon materials are at present the focus of an intense research effort in physics, chemistry and materials science due to their potential applications in spintronics and quantum computations. Although the presence of spins in open-shell nanographenes has been recently confirmed, the ability to control magnetic coupling sign has remained elusive, but the most desirable. Here, we demonstrate an effective approach of engineering magnetic ground states in atomically precise open-shell bipartite/nonbipartite nanographenes using combined scanning probe techniques and mean-field Hubbard model calculations. The magnetic coupling sign between two spins has been controlled via breaking bipartite lattice symmetry of nanographenes. In addition, the exchange-interaction strength between two spins has been widely tuned by finely tailoring their spin density overlap, realizing a large exchange-interaction strength of 42 meV. Our demonstrated method provides ample opportunities for designer above-room-temperature magnetic phases and functionalities in graphene nanomaterials.

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preprint2019arXiv

Modulating Super-Exchange Strength to Achieve Robust Ferromagnetic Couplings in Two-Dimensional Semiconductors

Low-dimensional semiconducting ferromagnets have attracted considerable attention due to their promising applications as nano-size spintronics. However, realizing robust ferromagnetic couplings that can survive at high temperature is restrained by two decisive factors: super-exchange couplings and anisotropy. Despite widely explored low-dimensional anisotropy, strengthening super-exchange couplings has rarely been investigated. Here, we found that ligands with lower electronegativity can strengthen ferromagnetic super-exchange couplings and further proposed the ligand modulation strategy to enhance the Curie temperature of low-dimensional ferromagnets. Based on the metallic CrX2 (X = S, Se, Te) family, substituting ligand atoms by halides can form stable semiconducting phase as CrSeCl, CrSeBr and CrTeBr. It is interesting to discover that, the nearest ferromagnetic super-exchange couplings can be strengthened when substituting ligands from S to Se and Te. Such evolution originates from the enhanced electron hopping integral and reduced energy intervals between d and p orbits. While the second nearest anti-ferromagnetic couplings are also benefitted due to delocalized p-p interactions. Finally, ligand modulation strategy is applied in other ferromagnetic monolayers, further verifying our theory and providing a fundamental understanding on controlling super-exchange couplings in low-dimension.

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preprint2018arXiv

Electric-field Control of Magnetism with Emergent Topological Hall Effect in SrRuO3 through Proton Evolution

Ionic substitution forms an essential pathway to manipulate the carrier density and crystalline symmetry of materials via ion-lattice-electron coupling, leading to a rich spectrum of electronic states in strongly correlated systems. Using the ferromagnetic metal SrRuO3 as a model system, we demonstrate an efficient and reversible control of both carrier density and crystalline symmetry through the ionic liquid gating induced protonation. The insertion of protons electron-dopes SrRuO3, leading to an exotic ferromagnetic to paramagnetic phase transition along with the increase of proton concentration. Intriguingly, we observe an emergent topological Hall effect at the boundary of the phase transition as the consequence of the newly-established Dzyaloshinskii-Moriya interaction owing to the breaking of inversion symmetry in protonated SrRuO3 with the proton compositional film-depth gradient. We envision that electric-field controlled protonation opens a novel strategy to design material functionalities.

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preprint2016arXiv

Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$

Bi$_2$Se$_3$ is a topological insulator and it is often doped with Te to compensate the $n$-type carriers due to Se vacancies. Different doping patterns of Te would influence the transport characteristics of the surface states. We study the Te atom distribution in Bi$_2$Se$_3$ with different Te concentrations, using first-principles density-functional-theory calculations. We show that Te prefer the outer layer, until the composition becomes Bi$_2$SeTe$_2$ and the outer layer is full of Te. And for a fixed ratio of Se and Te atoms within a single layer, we find that the structures with less number of adjacent Te-Se pairs tend to have lower energies. This might result in the formation of local Te clusters under low annealing temperatures.

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preprint2016arXiv

Electronic structure of Ba(Zn0.875Mn0.125)2As2 studied by angle-resolved photoemission spectroscopy

Electronic structure of single crystalline Ba(Zn$_{0.875}$Mn$_{0.125}$)$_{2}$As$_{2}$, parent compound of the recently founded high-temperature ferromagnetic semiconductor, was studied by high-resolution photoemission spectroscopy (ARPES). Through systematically photon energy and polarization dependent measurements, the energy bands along the out-of-plane and in-plane directions were experimentally determined. Except the localized states of Mn, the measured band dispersions agree very well with the first-principle calculations of undoped BaZn$_{2}$As$_{2}$. A new feature related to Mn 3d states was identified at the binding energies of about -1.6 eV besides the previously observed feature at about -3.3 eV. We suggest that the hybridization between Mn and As orbitals strongly enhanced the density of states around -1.6 eV. Although our resolution is much better compared with previous soft X-ray photoemission experiments, no clear hybridization gap between Mn 3d states and the valence bands proposed by previous model calculations was detected.

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preprint2016arXiv

Frameworks for Solving Turing Kernel Lower Bound Problem and Finding Natural Candidate Problems in NP-intermediate

Kernelization is a significant topic in parameterized complexity. Turing kernelization is a general form of kernelization. In the aspect of kernelization, an impressive hardness theory has been established [Bodlaender etc. (ICALP 2008, JCSS2009), Fortnow and Santhanam (STOC 2008, JCSS 2011), Dell and van Melkebeek (STOC 2010, J. ACM 2014), Drucker (FOCS 2012, SIAM J. Comput. 2015)], which can obtain lower bounds of kernel size. Unfortunately, there is yet no tool can prove Turing kernel lower bound for any FPT problem modulo any reasonable complexity hypothesis. Thus, constructing a framework for Turing kernel lower bound was proposed as an open problem in different occasions [Fernau etc. (STACS 2009), Misra etc. (Discrete Optimization 2011), Kratsch (Bulletin of the EATCS 2014), Cygan etc. (Dagstuhl Seminars on kernels 2014)]. Ladner [J. ACM 1975] proved that if $P \not = NP$, then there exist infinitely many NP-intermediate problems. However, the NP-intermediate problem constructed by Ladner is artificial. Thus, finding natural NP-intermediate problems under the assumption of $P \not= NP$ is a longstanding open problem in computation complexity community. This paper builds a new bridge between parameterized complexity and classic computational complexity. By using this new connection, some frameworks can be constructed. Based on the assumption that the polynomial hierarchy and the exponential hierarchy will not collapse, these frameworks have three main applications. Firstly, these frameworks can be used to obtain Turing kernel lower bounds of some important FPT problems, thus solving the first open problem. Secondly, these frameworks can also be used to obtain better kernel lower bounds for these problems. Thirdly, these frameworks can be used to figure out a large number of natural problems in NP-intermediate, thus making some contributions to the second open problem.

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preprint2015arXiv

A new structure of two-dimensional allotropes of group V elements

The elemental two-dimensional (2D) materials such as graphene, silicene, germanene, and black phosphorus have attracted considerable attention due to their fascinating physical properties. Structurally they possess the honeycomb or distorted honeycomb lattices, which are composed of six-atom rings. Here we find a new structure of 2D allotropes of group V elements composed of eight-atom rings, which we name as the octagonal tiling (OT) structure. First-principles calculations indicate that these allotropes are dynamically stable and are also thermally stable at temperatures up to 600 K. These allotropes are semiconductors with band gaps ranging from 0.3 to 2.0 eV, thus they are potentially useful in near- and mid-infrared optoelectronic devices. OT-Bi is also a 2D topological insulator (TI) with a band gap of 0.33 eV, which is the largest among the reported elemental 2D TIs, and this gap can be increased further by applying compressive strains.

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preprint2012arXiv

Massive Dirac surface states in topological insulator/magnetic insulator heterostructures

Topological insulators are new states of matter with a bulk gap and robust gapless surface states protected by time-reversal symmetry. When time-reversal symmetry is broken, the surface states are gapped, which induces a topological response of the system to electromagnetic field--the topological magnetoelectric effect. In this paper we study the behavior of topological surface states in heterostructures formed by a topological insulator and a magnetic insulator. Several magnetic insulators with compatible magnetic structure and relatively good lattice matching with topological insulators ${\rm Bi_2Se_3}, {\rm Bi_2Se_3}, {\rm Sb_2Te_3}$ are identified, and the best candidate material is found to be MnSe, an anti-ferromagnetic insulator. We perform first-principles calculation in ${\rm Bi_2Se_3/MnSe}$ superlattices and obtain the surface state bandstructure. The magnetic exchange coupling with MnSe induces a gap of $\sim$54 meV at the surface states. In addition we tune the distance between Mn ions and TI surface to study the distance dependence of the exchange coupling.

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preprint2010arXiv

Atomic-scale compensation phenomena at polar interfaces

The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by interfacial charge generated, for example, by oxygen vacancies.

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