Researcher profile

Chengyang Xu

Chengyang Xu contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2025arXiv

Interaction-Driven Chern Insulator at Zero Electric Field in ABCB-Stacked Tetralayer Graphene

ABCB-stacked tetralayer graphene, with intrinsic spontaneous polarization, offers a unique platform to explore electron correlation effects, whose interplay with spin-orbit coupling may engender topological phases. Here, employing a $\mathbf{k}\cdot\mathbf{p}$ model with self-consistent Hartree-Fock calculations, we investigate its electronic ground states. Remarkably, we find that the intrinsic polarization, in conjunction with strong interactions ($U=8 \text{ eV}$) and SOC, is sufficient to drive a $C=3$ quantum anomalous Hall state, obviating the need for an external electric field typical in ABCA stacks. Conversely, at moderate interactions ($U=6 \text{ eV}$), a minimal electric field is necessary. Furthermore, calculations predict other correlation-driven metallic phases such as quarter- and three-quarter-filled states. These results establish that the synergy of intrinsic polarization, correlations, and SOC governs the rich topological phenomena, suggesting ABCB-stacked graphene as a highly tunable platform for exploring emergent topological phenomena.

preprint2020arXiv

Designer spin order in diradical nanographenes

The magnetic properties of carbon materials are at present the focus of an intense research effort in physics, chemistry and materials science due to their potential applications in spintronics and quantum computations. Although the presence of spins in open-shell nanographenes has been recently confirmed, the ability to control magnetic coupling sign has remained elusive, but the most desirable. Here, we demonstrate an effective approach of engineering magnetic ground states in atomically precise open-shell bipartite/nonbipartite nanographenes using combined scanning probe techniques and mean-field Hubbard model calculations. The magnetic coupling sign between two spins has been controlled via breaking bipartite lattice symmetry of nanographenes. In addition, the exchange-interaction strength between two spins has been widely tuned by finely tailoring their spin density overlap, realizing a large exchange-interaction strength of 42 meV. Our demonstrated method provides ample opportunities for designer above-room-temperature magnetic phases and functionalities in graphene nanomaterials.