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Fengnian Xia

Fengnian Xia appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.opticsquant-ph

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Published work

28 published item(s)

preprint2016arXiv

Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications

Synapses are functional links between neurons, through which "information" flows in the neural network. These connections vary significantly in strength, typically resulting from the intrinsic heterogeneity in their chemical and biological properties. Such heterogeneity is fundamental to the diversity of neural activities, which together with other features of the brain enables functions ranging from perception and recognition, to memory and reasoning. Realizing such heterogeneity in synaptic electronics is critical towards building artificial neural network with the potential for achieving the level of complexity in biological systems. However, such intrinsic heterogeneity has been very challenging to realize in current synaptic devices. Here, we demonstrate the first black phosphorus (BP) synaptic device, which offers intrinsic anisotropy in its synaptic characteristics directly resulting from its low crystal symmetry. The charge transfer between the 2-nm native oxide of BP and the BP channel is utilized to achieve the synaptic behavior. Key features of biological synapses such as long-term plasticity with heterogeneity, including long-term potentiation/depression and spike-timing-dependent plasticity, are mimicked. With the anisotropic BP synaptic devices, we also realize a simple compact heterogeneous axon-multi-synapses network. This demonstration represents an important step towards introducing intrinsic heterogeneity to artificial neuromorphic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Protective Molecular Passivation of Black Phosphorous

Black phosphorous (BP) is one of the most interesting layered materials, bearing promising potential for emerging electronic and optoelectronic device technologies. The crystalline structure of BP displays in-plane anisotropy in addition to the out-of-plane anisotropy characteristic to layered materials. Therefore, BP supports anisotropic optical and transport responses that can enable unique device architectures. Its thickness-dependent direct bandgap varies in the range of around 0.3-2.0 eV (from single-layer to bulk, respectively), making BP suitable to optoelectronics in a broad spectral range. With high room-temperature mobility, exceeding 1,000 cm2V-1s-1 in thin films, BP is also a very promising material for electronics. However, BP is sensitive to oxygen and humidity due to its three-fold coordinated atoms. The surface electron lone pairs are reactive and can lead to structural degradation upon exposure to air, leading to significant device performance degradation in ambient condition. Here, we report a viable solution to overcome degradation in few-layer BP by passivating the surface with self-assembled monolayers of octadecyltrichlorosilane (OTS) that provide long-term stability in ambient conditions. Importantly, we show that this treatment does not cause any undesired carrier doping of the bulk channel material, thanks to the emergent hierarchical interface structure. Our approach is compatible with conventional electronic materials processing technologies thus providing an immediate route toward practical applications in BP devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Two-dimensional (2D) layered materials with diverse properties have attracted significant interest in the past decade. The layered materials discovered so far have covered a wide, yet discontinuous electromagnetic spectral range from semimetallic graphene, insulating boron nitride, to semiconductors with bandgaps from middle infrared to visible light. Here, we introduce new layered semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into long-wavelength infrared (LWIR) regime and cannot be readily reached by other layered materials. Moreover, polarization-resolved infrared absorption and Raman studies reveal in-plane anisotropic properties of b-AsP. This family of layered b-AsP materials extend the electromagnetic spectra covered by 2D layered materials to the LWIR regime, and may find unique applications for future all 2D layered material based devices.

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preprint2015arXiv

Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide

Recently, two-dimensional (2D) materials with strong in-plane anisotropic properties such as black phosphorus have demonstrated great potential for developing new devices that can take advantage of its reduced lattice symmetry with potential applications in electronics, optoelectronics and thermoelectrics. However, the selection of 2D material with strong in-plane anisotropy has so far been very limited and only sporadic studies have been devoted to transition metal dichalcogenides (TMDC) materials with reduced lattice symmetry, which is yet to convey the full picture of their optical and phonon properties, and the anisotropy in their interlayer interactions. Here, we study the anisotropic interlayer interactions in an important TMDC 2D material with reduced in-plane symmetry - atomically thin rhenium diselenide (ReSe2) - by investigating its ultralow frequency interlayer phonon vibration modes, the layer dependent optical bandgap, and the anisotropic photoluminescence (PL) spectra for the first time. The ultralow frequency interlayer Raman spectra combined with the first study of polarization-resolved high frequency Raman spectra in mono- and bi-layer ReSe2 allows deterministic identification of its layer number and crystal orientation. PL measurements show anisotropic optical emission intensity with bandgap increasing from 1.26 eV in the bulk to 1.32 eV in monolayer, consistent with the theoretical results based on first-principle calculations. The study of the layer-number dependence of the Raman modes and the PL spectra reveals the relatively weak van der Waals interaction and 2D quantum confinement in atomically-thin ReSe2.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Synthesis of thin-film black phosphorus on a flexible substrate

We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposited a red phosphorus (RP) thin-film on a flexible polyester substrate, followed by its conversion to BP in a high-pressure multi-anvil cell at room temperature. Raman spectroscopy and transmission electron microscopy measurements confirmed the formation of a nano-crystalline BP thin-film with a thickness of around 40 nm. Optical characterization indicates a bandgap of around 0.28 eV in the converted BP, similar to the bandgap measured in exfoliated thin-films. Thin-film BP transistors exhibit a field-effect mobility of around 0.5 cm2/Vs, which can probably be further enhanced by the optimization of the conversion process at elevated temperatures. Our work opens the avenue for the future demonstration of large-scale, high quality thin-film black phosphorus.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The Renaissance of Black Phosphorus

One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a two-dimensional (2D) layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Black Phosphorus Radio-Frequency Transistors

Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap of around 0.3 eV and high carrier mobility, leading to transistors with decent on-off ratio and high on-state current density. Here, we demonstrate the gigahertz frequency operation of black phosphorus field-effect transistors for the first time. The BP transistors demonstrated here show excellent current saturation with an on-off ratio exceeding 2000. We achieved a current density in excess of 270 mA/mm and DC transconductance above 180 mS/mm for hole conduction. Using standard high frequency characterization techniques, we measured a short-circuit current-gain cut-off frequency fT of 12 GHz and a maximum oscillation frequency fmax of 20 GHz in 300 nm channel length devices. BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus enabling the future ubiquitous transistor technology that can operate in the multi-GHz frequency range and beyond.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapour deposition (CVD). We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present, severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Due to the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Highly Anisotropic and Robust Excitons in Monolayer Black Phosphorus

Semi-metallic graphene and semiconducting monolayer transition metal dichalcogenides (TMDCs) are the two-dimensional (2D) materials most intensively studied in recent years. Recently, black phosphorus emerged as a promising new 2D material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. However, current progress is primarily limited to its thin-film form, and its unique properties at the truly 2D quantum confinement have yet to be demonstrated. Here, we reveal highly anisotropic and tightly bound excitons in monolayer black phosphorus using polarization-resolved photoluminescence measurements at room temperature. We show that regardless of the excitation laser polarization, the emitted light from the monolayer is linearly polarized along the light effective mass direction and centers around 1.3 eV, a clear signature of emission from highly anisotropic bright excitons. In addition, photoluminescence excitation spectroscopy suggests a quasiparticle bandgap of 2.2 eV, from which we estimate an exciton binding energy of around 0.9 eV, consistent with theoretical results based on first-principles. The experimental observation of highly anisotropic, bright excitons with exceedingly large binding energy not only opens avenues for the future explorations of many-electron effects in this unusual 2D material, but also suggests a promising future in optoelectronic devices such as on-chip infrared light sources.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Novel mid-infrared plasmonic properties of bilayer graphene

We study the mid-infrared plasmonic response in Bernal-stacked bilayer graphene. Unlike its monolayer counterpart, bilayer graphene accommodates optically active phonon modes and a resonant interband transition at infrared frequencies. They strongly modifies the plasmonic properties of bilayer graphene, leading to Fano-type resonances, giant plasmonic enhancement of infrared phonon absorption, narrow window of optical transparency, and a new plasmonic mode at higher energy than the classical plasmon.

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preprint2014arXiv

Plasmons and screening in monolayer and multilayer black phosphorus

Black phosphorus exhibits a high degree of band anisotropy. However, we found that its in-plane static screening remains relatively isotropic for momenta relevant to elastic long-range scattering processes. On the other hand, the collective electronic excitations in the system exhibit a strong anisotropy. Band non-parabolicity leads to a plasmon frequency which scales as $n^β$, where $n$ is the carrier concentration, and $β<\tfrac{1}{2}$. Screening and charge distribution in the out-of-plane direction are also studied using a non-linear Thomas-Fermi model.

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preprint2014arXiv

Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics

Anisotropy refers to the property of a material exhibiting directionally dependent features. In this paper, we introduce black phosphorous (BP), the most stable allotrope of phosphorus in layered orthorhombic structure with a bandgap of 0.3 eV in bulk, as a unique 2D material in which electrons, phonons and their interactions with photons behave in a highly anisotropic manner within the plane of the layers. The unique anisotropic nature of BP thin films is revealed using angle-resolved Raman and infrared spectroscopies, together with angle-resolved transport study. For 15 nm thick BP, we measure Hall mobility of 1000 and 600 cm^2/Vs for holes along the light (x) and heavy (y) effective mass directions, respectively, at 120 K. These BP thin films also exhibit large and anisotropic in-plane optical conductivity from 2 to 5 micrometer wavelength. Field effect transistors using 4 to 30 layers of BP (2 to 15 nm) as channel material exhibit an on-off current ratio exceeding 10^5, a field-effect mobility of 205 cm^2/Vs, and good saturation properties all at room temperature, suggesting its promising future in high performance thin film electronics. By introducing narrow bandgap BP into the 2D material family, we fill the space between semi-metallic graphene and large bandgap TMDCs, where great potentials for infrared optoelectronics lie. Most importantly, the unique anisotropic nature of this intriguing material creates unprecedented possibilities for the realization of conceptually new optoelectronic and electronic devices in which angle-dependent physical properties are highly desirable.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strong light-matter coupling in two-dimensional atomic crystals

Two dimensional (2D) atomic crystals of graphene, and transition metal dichalcogenides have emerged as a class of materials that show strong light-matter interaction. This interaction can be further controlled by embedding such materials into optical microcavities. When the interaction is engineered to be stronger than the dissipation of light and matter entities, one approaches the strong coupling regime resulting in the formation of half-light half-matter bosonic quasiparticles called microcavity polaritons. Here we report the evidence of strong light-matter coupling and formation of microcavity polaritons in a two dimensional atomic crystal of molybdenum disulphide (MoS2) embedded inside a dielectric microcavity at room temperature. A Rabi splitting of 46 meV and highly directional emission is observed from the MoS2 microcavity owing to the coupling between the 2D excitons and the cavity photons. Realizing strong coupling effects at room temperature in a disorder free potential landscape is central to the development of practical polaritonic circuits and switches.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tunable optical properties of multilayers black phosphorus thin films

Black phosphorus thin films might offer attractive alternatives to narrow gap compound semiconductors for optoelectronics across mid- to near-infrared frequencies. In this work, we calculate the optical conductivity tensor of multilayer black phosphorus thin films using the Kubo formula within an effective low-energy Hamiltonian. The optical absorption spectra of multilayer black phosphorus are shown to vary sensitively with thickness, doping, and light polarization. In conjunction with experimental spectra obtained from infrared absorption spectroscopy, we also discuss the role of interband coupling and disorder on the observed anisotropic absorption spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Two-Dimensional Material Nanophotonics

The emerging two-dimensional (2D) materials exhibit a wide range of electronic properties, ranging from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides such as molybdenum disulfide, to semi-metallic graphene. Here, we first review the optical properties and applications of a variety of 2D materials, followed by two different approaches to enhance their interactions with light: through their integration with external photonic structures and through their intrinsic polaritonic resonances. Finally, we cover a narrow bandgap layered material, black phosphorus, which serendipitously bridges the zero gap graphene and the relatively large-bandgap TMDCs. The plethora of 2D materials and their heterostructures, together with the approaches for enhancing light-matter interaction offers the promise of scientific discoveries and nanophotonics technologies across a wide range of electromagnetic spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Photocurrent in graphene harnessed by tunable intrinsic plasmons

Graphene's optical properties in the infrared and terahertz can be tailored and enhanced by patterning graphene into periodic metamaterials with sub-wavelength feature sizes. Here we demonstrate polarization sensitive and gate tunable photodetection in graphene nanoribbon arrays. The long-lived hybrid plasmon-phonon modes utilized are coupled excitations of electron density oscillations and substrate (SiO2) surface polar phonons. Their excitation by s-polarization leads to an in-resonance photocurrent an order of magnitude larger than the photocurrent observed for p-polarization, which excites electron-hole pairs. The plasmonic detectors exhibit photoinduced temperature increases up to four times as large as comparable 2D graphene detectors. Moreover, the photocurrent sign becomes polarization sensitive in the narrowest nanoribbon arrays due to differences in decay channels for photoexcited hybrid plasmon-phonons and electrons. Our work provides a path to light sensitive and frequency selective photodetectors based on graphene's plasmonic excitations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tunable phonon-induced transparency in bilayer graphene nanoribbons

In the phenomenon of electromagnetically induced transparency1 (EIT) of a three-level atomic system, the linear susceptibility at the dipole-allowed transition is canceled through destructive interference of the direct transition and an indirect transition pathway involving a meta-stable level, enabled by optical pumping. EIT not only leads to light transmission at otherwise opaque atomic transition frequencies, but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this letter, we report an analogous behavior, denoted as phonon-induced transparency (PIT), in AB-stacked bilayer graphene nanoribbons. Here, light absorption due to the plasmon excitation is suppressed in a narrow window due to the coupling with the infrared active Γ-point optical phonon, whose function here is similar to that of the meta-stable level in EIT of atomic systems. We further show that PIT in bilayer graphene is actively tunable by electrostatic gating, and estimate a maximum slow light factor of around 500 at the phonon frequency of 1580 cm-1, based on the measured spectra. Our demonstration opens an avenue for the exploration of few-photon non-linear optics and slow light in this novel two-dimensional material, without external optical pumping and at room temperature.

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preprint2012arXiv

Magnetic field tuning of terahertz Dirac plasmons in graphene

Boundaries and edges of a two dimensional system lower its symmetry and are usually regarded, from the point of view of charge transport, as imperfections. Here we present a first study of the behavior of graphene plasmons in a strong magnetic field that provides a different perspective. We show that the plasmon resonance in micron size graphene disks in a strong magnetic field splits into edge and bulk plasmon modes with opposite dispersion relations, and that the edge plasmons at terahertz frequencies develop increasingly longer lifetimes with increasing magnetic field, in spite of potentially more defects close to the graphene edges. This unintuitive behavior is attributed to increasing quasi-one dimensional field-induced confinement and the resulting suppression of the back-scattering. Due to the linear band structure of graphene, the splitting rate of the edge and bulk modes develops a strong doping dependence, which differs from the behavior of traditional semiconductor two-dimensional electron gas (2DEG) systems. We also observe the appearance of a higher order mode indicating an anharmonic confinement potential even in these well-defined circular disks. Our work not only opens an avenue for studying the physics of graphene edges, but also supports the great potential of graphene for tunable terahertz magneto-optical devices.

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preprint2012arXiv

Manipulating infrared photons using plasmons in transparent graphene superlattices

Superlattices are artificial periodic nanostructures which can control the flow of electrons. Their operation typically relies on the periodic modulation of the electric potential in the direction of electron wave propagation. Here we demonstrate transparent graphene superlattices which can manipulate infrared photons utilizing the collective oscillations of carriers, i.e., plasmons of the ensemble of multiple graphene layers. The superlattice is formed by depositing alternating wafer-scale graphene sheets and thin insulating layers, followed by patterning them all together into 3-dimensional photonic-crystal-like structures. We demonstrate experimentally that the collective oscillation of Dirac fermions in such graphene superlattices is unambiguously nonclassical: compared to doping single layer graphene, distributing carriers into multiple graphene layers strongly enhances the plasmonic resonance frequency and magnitude, which is fundamentally different from that in a conventional semiconductor superlattice. This property allows us to construct widely tunable far-infrared notch filters with 8.2 dB rejection ratio and terahertz linear polarizers with 9.5 dB extinction ratio, using a superlattice with merely five graphene atomic layers. Moreover, an unpatterned superlattice shields up to 97.5% of the electromagnetic radiations below 1.2 terahertz. This demonstration also opens an avenue for the realization of other transparent mid- and far-infrared photonic devices such as detectors, modulators, and 3-dimensional meta-material systems.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Mid-infrared plasmons in scaled graphene nanostructures

Plasmonics takes advantage of the collective response of electrons to electromagnetic waves, enabling dramatic scaling of optical devices beyond the diffraction limit. Here, we demonstrate the mid-infrared (4 to 15 microns) plasmons in deeply scaled graphene nanostructures down to 50 nm, more than 100 times smaller than the on-resonance light wavelength in free space. We reveal, for the first time, the crucial damping channels of graphene plasmons via its intrinsic optical phonons and scattering from the edges. A plasmon lifetime of 20 femto-seconds and smaller is observed, when damping through the emission of an optical phonon is allowed. Furthermore, the surface polar phonons in SiO2 substrate underneath the graphene nanostructures lead to a significantly modified plasmon dispersion and damping, in contrast to a non-polar diamond-like-carbon (DLC) substrate. Much reduced damping is realized when the plasmon resonance frequencies are close to the polar phonon frequencies. Our study paves the way for applications of graphene in plasmonic waveguides, modulators and detectors in an unprecedentedly broad wavelength range from sub-terahertz to mid-infrared.

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preprint2012arXiv

Photoconductivity of biased graphene

Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either thermoelectric or photovoltaic effects. In addition, hot carrier transport and carrier multiplication are thought to play an important role. Here we report the intrinsic photoresponse in biased but otherwise homogeneous graphene. In this classic photoconductivity experiment, the thermoelectric effects are insignificant. Instead, the photovoltaic and a photo-induced bolometric effect dominate the photoresponse due to hot photocarrier generation and subsequent lattice heating through electron-phonon cooling channels respectively. The measured photocurrent displays polarity reversal as it alternates between these two mechanisms in a backgate voltage sweep. Our analysis yields elevated electron and phonon temperatures, with the former an order higher than the latter, confirming that hot electrons drive the photovoltaic response of homogeneous graphene near the Dirac point.

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preprint2012arXiv

Plasmonics of coupled graphene micro-structures

The optical response of graphene micro-structures, such as micro-ribbons and disks, is dominated by the localized plasmon resonance in the far infrared (IR) spectral range. An ensemble of such structures is usually involved and the effect of the coupling between the individual structures is expected to play an important role. In this paper, the plasmonic coupling of graphene microstructures in different configurations is investigated. While a relatively weak coupling between graphene disks on the same plane is observed, the coupling between vertically stacked graphene disks is strong and a drastic increase of the resonance frequency is demonstrated. The plasmons in a more complex structure can be treated as the hybridization of plasmons from more elementary structures. As an example, the plasmon resonances of graphene micro-rings are presented, in conjunction with their response in a magnetic field. Finally, the coupling of the plasmon and the surface polar phonons of SiO2 substrate is demonstrated by the observation of a new hybrid resonance peak around 500cm-1.

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preprint2012arXiv

Quantum behavior of graphene transistors near the scaling limit

The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly-resolved Fabry-Perot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene screening determining the heterojunction barrier width, the scaling of minimum conductivity and of the on/off current ratio, are investigated.

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preprint2012arXiv

Telecommunications-band heralded single photons from a silicon nanophotonic chip

We demonstrate heralded single photon generation in a CMOS-compatible silicon nanophotonic device. The strong modal confinement and slow group velocity provided by a coupled resonator optical waveguide (CROW) produced a large four-wave-mixing nonlinearity coefficient gamma_eff ~4100 W^-1 m^-1 at telecommunications wavelengths. Spontaneous four-wave-mixing using a degenerate pump beam at 1549.6 nm created photon pairs at 1529.5 nm and 1570.5 nm with a coincidence-to-accidental ratio exceeding 20. A photon correlation measurement of the signal (1529.5 nm) photons heralded by the detection of the idler (1570.5 nm) photons showed antibunching with g^(2)(0) = 0.19 \pm 0.03. The demonstration of a single photon source within a silicon platform holds promise for future integrated quantum photonic circuits.

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preprint2011arXiv

High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate the device, a self-consistent Non-Equilibrium Green's Function (NEGF) solver has been developed and validated against published experimental data. Using the simulator, we predict an on-off ratio in excess of $10^4$ and a subthreshold slope of ~110mV/decade with excellent scalability and current saturation, for a 20nm gate length unipolar BLG FET. However, the performance of the proposed device is found to be strongly dependent on the S/D series resistance effect. The obtained results show significant improvements over existing reports, marking an important step towards bilayer graphene logic devices.

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preprint2011arXiv

Infrared Spectroscopy of Wafer-Scale Graphene

We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions), and the wavelength at which Pauli blocking occurs due to band filling. From these the graphene layer number, doping level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37\pm0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically-doped single layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 \mum (40 cm-1) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics.

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preprint2010arXiv

Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of a bandgap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical measurements suggest that a bandgap up to a few hundred meV can be created by the perpendicular E-field in bi-layer graphenes. Although previous carrier transport measurements in bi-layer graphene transistors did indicate a gate-induced insulating state at temperature below 1 Kelvin, the electrical (or transport) bandgap was estimated to be a few meV, and the room temperature on/off current ratio in bi-layer graphene FETs remains similar to those in single-layer graphene FETs. Here, for the first time, we report an on/off current ratio of around 100 and 2000 at room temperature and 20 K, respectively in our dual-gate bi-layer graphene FETs. We also measured an electrical bandgap of >130 and 80 meV at average electric displacements of 2.2 and 1.3 V/nm, respectively. This demonstration reveals the great potential of bi-layer graphene in applications such as digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics.

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preprint2010arXiv

Graphene photodetectors for high-speed optical communications

While silicon has dominated solid-state electronics for more than four decades, a variety of new materials have been introduced into photonics to expand the accessible wavelength range and to improve the performance of photonic devices. For example, gallium-nitride based materials enable the light emission at blue and ultraviolet wavelengths, and high index contrast silicon-on-insulator facilitates the realization of ultra dense and CMOS compatible photonic devices. Here, we report the first deployment of graphene, a two-dimensional carbon material, as the photo-detection element in a 10 Gbits/s optical data link. In this interdigitated metal-graphene-metal photodetector, an asymmetric metallization scheme is adopted to break the mirror symmetry of the built-in electric-field profile in conventional graphene field-effect-transistor channels, allowing for efficient photo-detection within the entire area of light illumination. A maximum external photo-responsivity of 6.1 mA/W is achieved at 1.55 μm wavelength, a very impressive value given that the material is below one nanometer in thickness. Moreover, owing to the unique band structure and exceptional electronic properties of graphene, high speed photodetectors with an ultra-wide operational wavelength range at least from 300 nm to 6 μm can be realized using this fascinating material.

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