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Phaedon Avouris

Phaedon Avouris appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.opticscond-mat.othercond-mat.str-elquant-ph

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Published work

57 published item(s)

preprint2023arXiv

Twisted two-dimensional material stacks for polarization optics

The ability to control light polarization state is critically important for diverse applications in information processing, telecommunications, and spectroscopy. Here, we propose that a stack of anisotropic van der Waals materials can facilitate the building of optical elements with Jones matrices of unitary, Hermitian, non-normal, singular, degenerate, and defective classes. We show that the twisted stack with electrostatic control can function as arbitrary-birefringent wave-plate or arbitrary polarizer with tunable degree of non-normality, which in turn give access to plethora of polarization transformers including rotators, pseudorotators, symmetric and ambidextrous polarizers. Moreover, we discuss an electrostatic-reconfigurable stack which can be tuned to operate as four different polarizers and be used for Stokes polarimetry.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Image polaritons in boron nitride for extreme polariton confinement with low losses

Polaritons in two-dimensional materials provide extreme light confinement that is difficult to achieve with metal plasmonics. However, such tight confinement inevitably increases optical losses through various damping channels. Here we demonstrate that hyperbolic phonon polaritons in hexagonal boron nitride can overcome this fundamental trade-off. Among two observed polariton modes, featuring a symmetric and antisymmetric charge distribution, the latter exhibits lower optical losses and tighter polariton confinement. Far-field excitation and detection of this high-momenta mode becomes possible with our resonator design that can boost the coupling efficiency via virtual polariton modes with image charges that we dub image polaritons. Using these image polaritons, we experimentally observe a record-high effective index of up to 132 and quality factors as high as 501. Further, our phenomenological theory suggests an important role of hyperbolic surface scattering in the damping process of hyperbolic phonon polaritons.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Plasmonic-based gas sensing with graphene nanoribbons

The main challenge to exploiting plasmons for gas vibrational mode sensing is the extremely weak infrared absorption of gas species. In this work, we explore the possibility of trapping free gas molecules via surface adsorption, optical, or electrostatic fields to enhance gas-plasmon interactions and to increase plasmon sensing ability. We discuss the relative strengths of these trapping forces and found gas adsorption in a typical nanoribbon array plasmonic setup produces measurable dips in optical extinction of magnitude 0.1 % for gas concentration of about parts per thousand level.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Plasmon coupling in extended structures: Graphene superlattice nanoribbon arrays

Interactions between localized plasmons in proximal nanostructures is a well-studied phenomenon. Here we explore plasmon plasmon interactions in connected extended systems. Such systems can now be easily produced using graphene. Specifically we employ the finite element method to study such interactions in graphene nanoribbon arrays with a periodically modulated electrochemical potential or number of layers. We find a rich variation in the resulting plasmonic resonances depending on the dimensions and the electrochemical potentials (doping) of the nanoribbon segments and the involvement of transverse and longitudinal plasmon interactions. Unlike predictions based of the well-known "orbital hybridization model", the energies of the resulting hybrid plasmonic resonances of the extended system can lie between the energies of the plasmons of the individual components. The results demonstrate the wide range tunability of the graphene plasmons and can help to design structures with desired spectra, which can be used to enhance optical fields in the infrared region of the electromagnetic spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Power dissipation and electrical breakdown in black phosphorus

We report operating temperatures and heating coefficients measured in a multi-layer black phosphorus device as a function of injected electrical power. By combining micro-Raman spectroscopy and electrical transport measurements, we have observed a linear temperature increase up to 600K at a power dissipation rate of 0.896Kμm^3/mW. By further increasing the bias voltage, we determined the threshold power and temperature for electrical breakdown and analyzed the fracture in the black phosphorus layer that caused the device failure by means of scanning electron microscopy and atomic force microscopy. The results will benefit the research and development of electronics and optoelectronics based on novel two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tunable light-matter interaction and the role of hyperbolicity in graphene-hBN system

Hexagonal boron nitride (hBN) is a natural hyperbolic material which can also accommodate highly dispersive surface phonon-polariton modes. In this paper, we examine theoretically the mid-infrared optical properties of graphene-hBN heterostructures derived from their coupled plasmon-phonon modes. We found that the graphene plasmon couples differently with the phonons of the two Reststrahlen bands, owing to their different hyperbolicity. This also leads to distinctively different interaction between an external quantum emitter and the plasmon-phonon modes in the two bands, leading to substantial modification of its spectrum. The coupling to graphene plasmons allows for additional gate tunability in the Purcell factor, and narrow dips in its emission spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A black phosphorus photo-detector for multispectral, high-resolution imaging

Black phosphorus is a layered semiconductor that is intensely researched in view of applications in optoelectronics. In this Letter, we investigate a multi-layer black phosphorus photo-detector that is capable of acquiring high-contrast (V>0.9) images both in the visible (λ_{VIS}=532nm) as well as in the infrared (λ_{IR}=1550nm) spectral regime. In a first step, by using photocurrent microscopy, we map the active area of the device and we characterize responsivity and gain. In a second step, by deploying the black phosphorus device as a point-like detector in a confocal microsope setup, we acquire diffraction-limited optical images with sub-micron resolution. The results demonstrate the usefulness of black phosphorus as an optoelectronic material for hyperspectral imaging applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapour deposition (CVD). We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present, severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Due to the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Graphene Plasmonics for Terahertz to Mid-Infrared Applications

In recent years, we have seen a rapid progress in the field of graphene plasmonics, motivated by graphene's unique electrical and optical properties, tunabilty, long-lived collective excitation and their extreme light confinement. Here, we review the basic properties of graphene plasmons; their energy dispersion, localization and propagation, plasmon-phonon hybridization, lifetimes and damping pathways. The application space of graphene plasmonics lies in the technologically significant, but relatively unexploited terahertz to mid-infrared regime. We discuss emerging and potential applications, such as modulators, notch filters, polarizers, mid-infrared photodetectors, mid-infrared vibrational spectroscopy, among many others.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Novel mid-infrared plasmonic properties of bilayer graphene

We study the mid-infrared plasmonic response in Bernal-stacked bilayer graphene. Unlike its monolayer counterpart, bilayer graphene accommodates optically active phonon modes and a resonant interband transition at infrared frequencies. They strongly modifies the plasmonic properties of bilayer graphene, leading to Fano-type resonances, giant plasmonic enhancement of infrared phonon absorption, narrow window of optical transparency, and a new plasmonic mode at higher energy than the classical plasmon.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Origin of photoresponse in black phosphorus photo-transistors

We study the origin of photocurrent generated in doped multilayer BP photo-transistors, and find that it is dominated by thermally driven thermoelectric and bolometric processes. The experimentally observed photocurrent polarities are consistent with photo-thermal processes. The photo-thermoelectric current can be generated up to a $μ$m away from the contacts, indicating a long thermal decay length. With an applied source-drain bias, a photo-bolometric current is generated across the whole device, overwhelming the photo-thermoelectric contribution at a moderate bias. The photo-responsivity in the multilayer BP device is two orders of magnitude larger than that observed in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Plasmons and screening in monolayer and multilayer black phosphorus

Black phosphorus exhibits a high degree of band anisotropy. However, we found that its in-plane static screening remains relatively isotropic for momenta relevant to elastic long-range scattering processes. On the other hand, the collective electronic excitations in the system exhibit a strong anisotropy. Band non-parabolicity leads to a plasmon frequency which scales as $n^β$, where $n$ is the carrier concentration, and $β<\tfrac{1}{2}$. Screening and charge distribution in the out-of-plane direction are also studied using a non-linear Thomas-Fermi model.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Substrate Sensitive Mid-Infrared Photoresponse in Graphene

We report mid-infrared photocurrent spectra of graphene nanoribbon arrays on SiO2 dielectrics showing dual signatures of the substrate interaction. First, hybrid polaritonic modes of graphene plasmons and dielectric surface polar phonons produce a thermal photocurrent in graphene with spectral features that are tunable by gate voltage, nanoribbon width, and light polarization. Secondly, phonon-polaritons associated with the substrate are excited, which indirectly heat up the graphene leading to a graphene photocurrent with fixed spectral features. Models for other commonly used substrates show that the responsivity of graphene infrared photodetectors can be tailored to specific mid-IR frequency bands by the choice of the substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Effects of optical and surface polar phonons on the optical conductivity of doped graphene

Using the Kubo linear response formalism, we study the effects of intrinsic graphene optical and surface polar phonons (SPPs) on the optical conductivity of doped graphene. We find that inelastic electron-phonon scattering contributes significantly to the phonon-assisted absorption in the optical gap. At room temperature, this midgap absorption can be as large as 20-25% of the universal ac conductivity for graphene on polar substrates due to strong electron-SPP coupling. The midgap absorption, moreover, strongly depends on the substrates and doping levels used. With increasing temperature, the midgap absorption increases, while the Drude peak, on the other hand, becomes broader as inelastic electron-phonon scattering becomes more probable. Consequently, the Drude weight decreases with increasing temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic structure of oxygen-functionalized armchair graphene nanoribbons

The electronic and magnetic properties of varying width, oxygen-functionalized armchair graphene nanoribbons (AGNRs) are investigated using first-principles density functional theory (DFT). Our study shows that O-passivation results in a rich geometrical environment which in turn determines the electronic and magnetic properties of the AGNR. For planar systems a degenerate magnetic ground state, arising from emptying of O lone-pair electrons, is reported. DFT predicts ribbons with ferromagnetic coupling to be metallic whereas antiferromagnetically coupled ribbons present three band gap families: one metallic and two semiconducting. Unlike hydrogen functionalized AGNRs, the oxygen functionalized ribbons can attain a lower energy configuration by adopting a non-planar geometry. The non-planar structures are non-magnetic and show three semiconducting families of band gap behavior. Quasiparticle corrections to the DFT results predict a widening of the band gaps for all planar and non-planar, semiconducting systems. This suggests that oxygen functionalization could be used to manipulate the electronic structures of AGNRs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Photocurrent in graphene harnessed by tunable intrinsic plasmons

Graphene's optical properties in the infrared and terahertz can be tailored and enhanced by patterning graphene into periodic metamaterials with sub-wavelength feature sizes. Here we demonstrate polarization sensitive and gate tunable photodetection in graphene nanoribbon arrays. The long-lived hybrid plasmon-phonon modes utilized are coupled excitations of electron density oscillations and substrate (SiO2) surface polar phonons. Their excitation by s-polarization leads to an in-resonance photocurrent an order of magnitude larger than the photocurrent observed for p-polarization, which excites electron-hole pairs. The plasmonic detectors exhibit photoinduced temperature increases up to four times as large as comparable 2D graphene detectors. Moreover, the photocurrent sign becomes polarization sensitive in the narrowest nanoribbon arrays due to differences in decay channels for photoexcited hybrid plasmon-phonons and electrons. Our work provides a path to light sensitive and frequency selective photodetectors based on graphene's plasmonic excitations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tunable phonon-induced transparency in bilayer graphene nanoribbons

In the phenomenon of electromagnetically induced transparency1 (EIT) of a three-level atomic system, the linear susceptibility at the dipole-allowed transition is canceled through destructive interference of the direct transition and an indirect transition pathway involving a meta-stable level, enabled by optical pumping. EIT not only leads to light transmission at otherwise opaque atomic transition frequencies, but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this letter, we report an analogous behavior, denoted as phonon-induced transparency (PIT), in AB-stacked bilayer graphene nanoribbons. Here, light absorption due to the plasmon excitation is suppressed in a narrow window due to the coupling with the infrared active Γ-point optical phonon, whose function here is similar to that of the meta-stable level in EIT of atomic systems. We further show that PIT in bilayer graphene is actively tunable by electrostatic gating, and estimate a maximum slow light factor of around 500 at the phonon frequency of 1580 cm-1, based on the measured spectra. Our demonstration opens an avenue for the exploration of few-photon non-linear optics and slow light in this novel two-dimensional material, without external optical pumping and at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Cooling of photoexcited carriers in graphene by internal and substrate phonons

We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculate key characteristics of the energy relaxation process, such as the transient cooling time and steady state carrier temperatures and photocarriers densities, which determine the thermoelectric and photovoltaic photoresponse, respectively. Substrate engineering can be a promising route to efficient optoelectronic devices driven by hot carrier dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Deformation and scattering in graphene over substrate steps

The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the substrate. Here we calculate the deformation of graphene at substrate steps, and the resulting electrical resistance, over a wide range of step heights. The elastic deformations contribute only a very small resistance at the step. However, for graphene on SiC(0001) there is strong substrate-induced doping, and this is substantially reduced on the lower side of the step where graphene pulls away from the substrate. The resulting resistance explains the experimental measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High-frequency performance of scaled carbon nanotube array field-effect transistors

We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Light-matter interaction in a microcavity-controlled graphene transistor

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic field tuning of terahertz Dirac plasmons in graphene

Boundaries and edges of a two dimensional system lower its symmetry and are usually regarded, from the point of view of charge transport, as imperfections. Here we present a first study of the behavior of graphene plasmons in a strong magnetic field that provides a different perspective. We show that the plasmon resonance in micron size graphene disks in a strong magnetic field splits into edge and bulk plasmon modes with opposite dispersion relations, and that the edge plasmons at terahertz frequencies develop increasingly longer lifetimes with increasing magnetic field, in spite of potentially more defects close to the graphene edges. This unintuitive behavior is attributed to increasing quasi-one dimensional field-induced confinement and the resulting suppression of the back-scattering. Due to the linear band structure of graphene, the splitting rate of the edge and bulk modes develops a strong doping dependence, which differs from the behavior of traditional semiconductor two-dimensional electron gas (2DEG) systems. We also observe the appearance of a higher order mode indicating an anharmonic confinement potential even in these well-defined circular disks. Our work not only opens an avenue for studying the physics of graphene edges, but also supports the great potential of graphene for tunable terahertz magneto-optical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Manipulating infrared photons using plasmons in transparent graphene superlattices

Superlattices are artificial periodic nanostructures which can control the flow of electrons. Their operation typically relies on the periodic modulation of the electric potential in the direction of electron wave propagation. Here we demonstrate transparent graphene superlattices which can manipulate infrared photons utilizing the collective oscillations of carriers, i.e., plasmons of the ensemble of multiple graphene layers. The superlattice is formed by depositing alternating wafer-scale graphene sheets and thin insulating layers, followed by patterning them all together into 3-dimensional photonic-crystal-like structures. We demonstrate experimentally that the collective oscillation of Dirac fermions in such graphene superlattices is unambiguously nonclassical: compared to doping single layer graphene, distributing carriers into multiple graphene layers strongly enhances the plasmonic resonance frequency and magnitude, which is fundamentally different from that in a conventional semiconductor superlattice. This property allows us to construct widely tunable far-infrared notch filters with 8.2 dB rejection ratio and terahertz linear polarizers with 9.5 dB extinction ratio, using a superlattice with merely five graphene atomic layers. Moreover, an unpatterned superlattice shields up to 97.5% of the electromagnetic radiations below 1.2 terahertz. This demonstration also opens an avenue for the realization of other transparent mid- and far-infrared photonic devices such as detectors, modulators, and 3-dimensional meta-material systems.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Mid-infrared plasmons in scaled graphene nanostructures

Plasmonics takes advantage of the collective response of electrons to electromagnetic waves, enabling dramatic scaling of optical devices beyond the diffraction limit. Here, we demonstrate the mid-infrared (4 to 15 microns) plasmons in deeply scaled graphene nanostructures down to 50 nm, more than 100 times smaller than the on-resonance light wavelength in free space. We reveal, for the first time, the crucial damping channels of graphene plasmons via its intrinsic optical phonons and scattering from the edges. A plasmon lifetime of 20 femto-seconds and smaller is observed, when damping through the emission of an optical phonon is allowed. Furthermore, the surface polar phonons in SiO2 substrate underneath the graphene nanostructures lead to a significantly modified plasmon dispersion and damping, in contrast to a non-polar diamond-like-carbon (DLC) substrate. Much reduced damping is realized when the plasmon resonance frequencies are close to the polar phonon frequencies. Our study paves the way for applications of graphene in plasmonic waveguides, modulators and detectors in an unprecedentedly broad wavelength range from sub-terahertz to mid-infrared.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Photoconductivity of biased graphene

Graphene is a promising candidate for optoelectronic applications such as photodetectors, terahertz imagers, and plasmonic devices. The origin of photoresponse in graphene junctions has been studied extensively and is attributed to either thermoelectric or photovoltaic effects. In addition, hot carrier transport and carrier multiplication are thought to play an important role. Here we report the intrinsic photoresponse in biased but otherwise homogeneous graphene. In this classic photoconductivity experiment, the thermoelectric effects are insignificant. Instead, the photovoltaic and a photo-induced bolometric effect dominate the photoresponse due to hot photocarrier generation and subsequent lattice heating through electron-phonon cooling channels respectively. The measured photocurrent displays polarity reversal as it alternates between these two mechanisms in a backgate voltage sweep. Our analysis yields elevated electron and phonon temperatures, with the former an order higher than the latter, confirming that hot electrons drive the photovoltaic response of homogeneous graphene near the Dirac point.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Plasmonics of coupled graphene micro-structures

The optical response of graphene micro-structures, such as micro-ribbons and disks, is dominated by the localized plasmon resonance in the far infrared (IR) spectral range. An ensemble of such structures is usually involved and the effect of the coupling between the individual structures is expected to play an important role. In this paper, the plasmonic coupling of graphene microstructures in different configurations is investigated. While a relatively weak coupling between graphene disks on the same plane is observed, the coupling between vertically stacked graphene disks is strong and a drastic increase of the resonance frequency is demonstrated. The plasmons in a more complex structure can be treated as the hybridization of plasmons from more elementary structures. As an example, the plasmon resonances of graphene micro-rings are presented, in conjunction with their response in a magnetic field. Finally, the coupling of the plasmon and the surface polar phonons of SiO2 substrate is demonstrated by the observation of a new hybrid resonance peak around 500cm-1.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum behavior of graphene transistors near the scaling limit

The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly-resolved Fabry-Perot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene screening determining the heterojunction barrier width, the scaling of minimum conductivity and of the on/off current ratio, are investigated.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Structure and electronic transport in graphene wrinkles

Wrinkling is a ubiquitous phenomenon in two-dimensional membranes. In particular, in the large-scale growth of graphene on metallic substrates, high densities of wrinkles are commonly observed. Despite their prevalence and potential impact on large-scale graphene electronics, relatively little is known about their structural morphology and electronic properties. Surveying the graphene landscape using atomic force microscopy, we found that wrinkles reach a certain maximum height before folding over. Calculations of the energetics explain the morphological transition, and indicate that the tall ripples are collapsed into narrow standing wrinkles by van der Waals forces, analogous to large-diameter nanotubes. Quantum transport calculations show that conductance through these collapsed wrinkle structures is limited mainly by a density-of-states bottleneck and by interlayer tunneling across the collapsed bilayer region. Also through systematic measurements across large numbers of devices with wide folded wrinkles, we find a distinct anisotropy in their electrical resistivity, consistent with our transport simulations. These results highlight the coupling between morphology and electronic properties, which has important practical implications for large-scale high-speed graphene electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene terrace domain at room temperature, the step edges can result in a vicinal step resistance of ~21 kΩ.μm. By orienting the transistor layout so that the entire channel lies within a single graphene terrace, and reducing the access resistance associated with the ungated part of the channel, a cut-off frequency above 200 GHz is achieved for graphene FETs with channel lengths of 210 nm, which is the highest value reported on epitaxial graphene thus far.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Infrared Spectroscopy of Wafer-Scale Graphene

We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions), and the wavelength at which Pauli blocking occurs due to band filling. From these the graphene layer number, doping level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37\pm0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically-doped single layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 \mum (40 cm-1) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC

The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility is larger in thicker graphene because substrate-related scattering is reduced in the higher layers. The carrier density dependence of the mobility is qualitatively different in thin and thick graphene, with the transition occurring at about 2 layers. The mobility increases with carrier density in thick graphene, similar to multi-layer graphene exfoliated from natural graphite, suggesting that the individual layers are still electrically coupled in spite of reports recording non-Bernal stacking order in C-face grown graphene. The Hall coefficient peak value is reduced in thick graphene due to the increased density of states. A reliable and rapid characterization tool for the layer number is therefore highly desirable. To date, AFM height determination and Raman scattering are typically used since the optical contrast of graphene on SiC is weak. However, both methods suffer from low throughput. We show that the scanning electron microscopy (SEM) contrast can give similar results with much higher throughput.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Relaxation of Optically Excited Carriers in Graphene

We explore the relaxation of photo-excited graphene by solving a transient Boltzmann transport equation with electron-phonon (e-ph) and electron-electron (e-e) scattering. Simulations show that when the excited carriers are relaxed by e-ph scattering only, a population inversion can be achieved at energies determined by the photon energy. However, e-e scattering quickly thermalizes the carrier energy distributions washing out the negative optical conductivity peaks. The relaxation rates and carrier multiplication effects are presented as a function of photon energy and dielectric constant.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultimate RF Performance Potential of Carbon Electronics

Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-dimensional graphene field-effect transistors (GFETs) have recently attracted significant attention for potential RF applications. Here, we explore the ultimate RF performance potential for these two unique devices using semi-classical ballistic transport simulations. It is shown that the intrinsic current-gain and power-gain cutoff frequencies (fT and fMAX) above 1 THz should be possible in both AFETs and GFETs. Thus, both devices could deliver higher cut-off frequencies than traditional semiconductors such as Si and III-V's. In the case of AFETs, we show that their RF operation is not sensitive to the diameter variation of semiconducting tubes and the presence of metallic tubes in the channel. The ultimate fT and fMAX values in AFETs are observed to be higher than that in GFETs. The optimum device biasing conditions for AFETs require smaller biasing currents, and thus, lower power dissipation compared to GFETs. The degradation in high-frequency performance in the presence of external parasitics is also seen to be lower in AFETs compared to GFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

100 GHz Transistors from Wafer Scale Epitaxial Graphene

High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate length. The result confirms the high potential of graphene for advanced electronics applications, marking an important milestone for carbon electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Efficient narrow-band light emission from a single carbon nanotube p-n diode

Electrically-driven light emission from carbon nanotubes could be exploited in nano-scale lasers and single-photon sources, and has therefore been the focus of much research. However, to date, high electric fields and currents have been either required for electroluminescence, or have been an undesired side effect, leading to high power requirements and low efficiencies. In addition, electroluminescent linewidths have been broad enough to obscure the contributions of individual optical transitions. Here, we report electrically-induced light emission from individual carbon nanotube p-n diodes. A new level of control over electrical carrier injection is achieved, reducing power dissipation by a factor of up to 1000, and resulting in zero threshold current, negligible self-heating, and high carrier-to- photon conversion efficiencies. Moreover, the electroluminescent spectra are significantly narrower (ca. 35 meV) than in previous studies, allowing the identification of emission from free and localized excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of a bandgap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical measurements suggest that a bandgap up to a few hundred meV can be created by the perpendicular E-field in bi-layer graphenes. Although previous carrier transport measurements in bi-layer graphene transistors did indicate a gate-induced insulating state at temperature below 1 Kelvin, the electrical (or transport) bandgap was estimated to be a few meV, and the room temperature on/off current ratio in bi-layer graphene FETs remains similar to those in single-layer graphene FETs. Here, for the first time, we report an on/off current ratio of around 100 and 2000 at room temperature and 20 K, respectively in our dual-gate bi-layer graphene FETs. We also measured an electrical bandgap of >130 and 80 meV at average electric displacements of 2.2 and 1.3 V/nm, respectively. This demonstration reveals the great potential of bi-layer graphene in applications such as digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Graphene photodetectors for high-speed optical communications

While silicon has dominated solid-state electronics for more than four decades, a variety of new materials have been introduced into photonics to expand the accessible wavelength range and to improve the performance of photonic devices. For example, gallium-nitride based materials enable the light emission at blue and ultraviolet wavelengths, and high index contrast silicon-on-insulator facilitates the realization of ultra dense and CMOS compatible photonic devices. Here, we report the first deployment of graphene, a two-dimensional carbon material, as the photo-detection element in a 10 Gbits/s optical data link. In this interdigitated metal-graphene-metal photodetector, an asymmetric metallization scheme is adopted to break the mirror symmetry of the built-in electric-field profile in conventional graphene field-effect-transistor channels, allowing for efficient photo-detection within the entire area of light illumination. A maximum external photo-responsivity of 6.1 mA/W is achieved at 1.55 μm wavelength, a very impressive value given that the material is below one nanometer in thickness. Moreover, owing to the unique band structure and exceptional electronic properties of graphene, high speed photodetectors with an ultra-wide operational wavelength range at least from 300 nm to 6 μm can be realized using this fascinating material.

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preprint2010arXiv

Inelastic Scattering and Current Saturation in Graphene

We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of the saturated velocity shows very weak dependence on the carrier density, the nature of the insulating substrate, and the low-field mobility, varied by the charged impurity concentration. The saturated velocity of 4 - 8 x 10^7 cm/s calculated at room temperature is significantly larger than reported experimental values. The discrepancy is due to the self-heating effect which lowers substantially the value of the saturated velocity. We predict that by reducing the insulator oxide thickness, which limits the thermal conductance, the saturated currents can be significantly enhanced. We also calculate the surface polar phonon contribution to the low-field mobility as a function of carrier density, temperature, and distance from the substrate.

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preprint2010arXiv

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two.

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preprint2010arXiv

Silicon nitride gate dielectrics and bandgap engineering in graphene layers

We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band-gap or band-overlap in the different layers.

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preprint2010arXiv

Thermal infrared emission reveals the Dirac point movement in biased graphene

Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly independent of wavelength. Here we investigate the thermal radiation from biased graphene transistors. We find that the emission spectrum of single-layer graphene follows that of a grey body with constant emissivity (1.6 \pm 0.8)%. Most importantly, we can extract the temperature distribution in the ambipolar graphene channel, as confirmed by Stokes/anti-Stokes measurements. The biased graphene exhibits a temperature maximum whose location can be controlled by the gate voltage. We show that this peak in temperature reveals the spatial location of the minimum in carrier density, i.e. the Dirac point.

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preprint2010arXiv

Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gated radio frequency field effect transistors (RF-FETs) with a peak cutoff frequency fT of 100 GHz for a gate length of 240 nm were fabricated using epitaxial graphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450 cm^2/Vs from ungated Hall bars and 1575 cm^2/Vs from top-gated ones. This is by far the highest cut-off frequency measured from any kind of graphene.

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preprint2009arXiv

An essential mechanism of heat dissipation in carbon nanotube electronics

Excess heat generated in integrated circuits is one of the major problems of modern electronics. Surface phonon-polariton scattering is shown here to be the dominant mechanism for hot charge carrier energy dissipation in a nanotube device fabricated on a polar substrate, such as $SiO_2$. Using microscopic quantum models the Joule losses were calculated for the various energy dissipation channels as a function of the electric field, doping, and temperature. The polariton mechanism must be taken into account to obtain an accurate estimate of the effective thermal coupling of the non-suspended nanotube to the substrate, which was found to be 0.1-0.2 W/m.K even in the absence of the bare phononic thermal coupling.

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preprint2009arXiv

Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes

The carrier density and temperature dependence of the Hall mobility in mono-, bi- and tri-layer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for mono-layer graphene, while it increases for bi-layer/tri-layer graphene. This can be explained by the different density of states in mono-layer and bi-layer/tri-layer graphenes. In mono-layer, the mobility also decreases with increasing temperature primarily due to surface polar substrate phonon scattering. In bi-layer/tri-layer graphene, on the other hand, the mobility increases with temperature because the field of the substrate surface phonons is effectively screened by the additional graphene layer(s) and the mobility is dominated by Coulomb scattering. We also find that the temperature dependence of the Hall coefficient in mono-, bi- and tri-layer graphene can be explained by the formation of electron and hole puddles in graphene. This model also explains the temperature dependence of the minimum conductance of mono-, bi- and tri-layer graphene. The electrostatic potential variations across the different graphene samples are extracted.

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preprint2008arXiv

Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices

We investigate polyethylene imine and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.

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preprint2008arXiv

Operation of Graphene Transistors at GHz Frequencies

Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for graphene transistors. The cutoff frequency fT is found to be proportional to the dc transconductance gm of the device. The peak fT increases with a reduced gate length, and fT as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step towards the realization of graphene-based electronics for high-frequency applications.

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preprint2008arXiv

The Effects of Substrate Phonon Mode Scattering on Transport in Carbon Nanotubes

Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP) scattering has a dramatic effect on the CNTFET mobility, due to the reduced vertical dimensions of the latter. We find that for the Van der Waals distance between CNT and an SiO$_2$ substrate, the low-field mobility at room temperature is reduced by almost an order of magnitude depending on the tube diameter. We predict additional experimental signatures of the SPP mechanism in dependence of the mobility on density, temperature, tube diameter, and CNT - substrate separation.

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preprint2007arXiv

Exciton Ionization, Franz-Keldysh and Stark Effects in Carbon Nanotubes

We calculate the optical properties of carbon nanotubes in an external static electric field directed along the tube axis. We predict strong Franz-Keldysh oscillations in the first and second band-to-band absorption peaks, quadratic Stark effect of the first two excitons, and the field dependence of the bound exciton ionization rate for a wide range of tube chiralities. We find that the phonon assisted mechanism dominates the dissociation rate in electro-optical devices due to the hot optical phonons. We predict a quadratic dependence of the Sommerfeld factor on the electric field and its increase up to 2000% at the critical field of the full exciton dissociation.

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preprint2007arXiv

Interaction of solid organic acids with carbon nanotube field effect transistors

A series of solid organic acids were used to p-dope carbon nanotubes. The extent of doping is shown to be dependent on the pKa value of the acids. Highly fluorinated carboxylic acids and sulfonic acids are very effective in shifting the threshold voltage and making carbon nanotube field effect transistors to be more p-type devices. Weaker acids like phosphonic or hydroxamic acids had less effect. The doping of the devices was accompanied by a reduction of the hysteresis in the transfer characteristics. In-solution doping survives standard fabrication processes and renders p-doped carbon nanotube field effect transistors with good transport characteristics.

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preprint2007arXiv

Intersubband decay of 1-D exciton resonances in carbon nanotubes

We have studied intersubband decay of E22 excitons in semiconducting carbon nanotubes experimentally and theoretically. Photoluminescence excitation line widths of semiconducting nanotubes with chiral indicess (n, m) can be mapped onto a connectivity grid with curves of constant (n-m) and (2n+m). Moreover, the global behavior of E22 linewidths is best characterized by a strong increase with energy irrespective of their (n-m) mod(3)= \pm 1 family affiliation. Solution of the Bethe-Salpeter equations shows that the E22 linewidths are dominated by phonon assisted coupling to higher momentum states of the E11 and E12 exciton bands. The calculations also suggest that the branching ratio for decay into exciton bands vs free carrier bands, respectively is about 10:1.

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preprint2006arXiv

Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors

We probed the charge transfer interaction between the amine-containing molecules: hydrazine, polyaniline and aminobutyl phosphonic acid, and carbon nanotube field effect transistors (CNTFETs). We successfully converted p-type CNTFETs to n-type and drastically improved the device performance in both the ON- and OFF- transistor states utilizing hydrazine as dopant. We effectively switched the transistor polarity between p- and n- type by accessing different oxidation states of polyaniline. We also demonstrated the flexibility of modulating the threshold voltage (Vth) of a CNTFET by engineering various charge-accepting and -donating groups in the same molecule.

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preprint2006arXiv

Field-effect transistors assembled from functionalized carbon nanotubes

We have fabricated field effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices we have fabricated show excellent electrical characteristics.

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preprint2006arXiv

Tungsten oxide nanowire growth by chemically-induced strain

We have investigated the formation of tungsten oxide nanowires under different CVD conditions. We find that exposure of oxidized tungsten films to hydrogen and methane at 900C leads to the formation of a dense array of typically 10 nm diameter nanowires. Structural and chemical analysis shows that the wires are crystalline WO3. We propose a chemically-driven whisker growth mechanism in which interfacial strain associated with the formation of tungsten carbide stimulates nanowire growth. This might be a general concept, applicable also in other nanowire systems.

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preprint2005arXiv

Mobility in semiconducting carbon nanotubes at finite carrier density

Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field, for different tube diameters and temperature. The low-field mobility is a non-monotonic function of carrier density, and varies by as much as a factor of 4 at room temperature. At low density, with increasing field the drift velocity reaches a maximum and then exhibits negative differential mobility, due to the non-parabolicity of the bandstructure. At a critical density $ρ_c\sim$ 0.35-0.5 electrons/nm, the drift velocity saturates at around one third of the Fermi velocity. Above $ρ_c$, the velocity increases with field strength with no apparent saturation.

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preprint2005arXiv

Radiative Lifetime of Excitons in Carbon Nanotubes

We calculate the radiative lifetime and energy bandstructure of excitons in semiconducting carbon nanotubes, within a tight-binding approach. In the limit of rapid interband thermalization, the radiative decay rate is maximized at intermediate temperatures, decreasing at low temperature because the lowest-energy excitons are optically forbidden. The intrinsic phonons cannot scatter excitons between optically active and forbidden bands, so sample-dependent extrinsic effects that break the symmetries can play a central role. We calculate the diameter-dependent energy splittings between singlet and triplet excitons of different symmetries, and the resulting dependence of radiative lifetime on temperature and tube diameter.

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preprint2005arXiv

Self-aligned carbon nanotube transistors with charge transfer doping

This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the ON- and OFF- transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2-3 orders of magnitude, the device OFF current is suppressed and an excellent Ion/Ioff ratio of six order of magnitude is obtained. The important role played by metal-nanotube contacts modification through charge transfer is demonstrated.

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preprint2000arXiv

Electron Interference Effects on the Conductance of Doped Carbon Nanotubes

We investigate the effects of impurity scattering on the conductance of metallic carbon nanotubes as a function of the relative separation of the impurities. First we compute the conductance of a clean (6,6) tube, and the effect of model gold contacts on this conductance. Then, we compute the effect of introducing a single, two, and three oxygen atom impurities. We find that the conductance of a single-oxygen-doped (6,6) nanotube decreases by about 30 % with respect to that of the perfect nanotube. The presence of a second doping atom induces strong changes of the conductance which, however, depend very strongly on the relative position of the two oxygen atoms. We observe regular oscillations of the conductance that repeat over an O-O distance that corresponds to an integral number of half Fermi-wavelengths ($mλ_F/2$). These fluctuations reflect strong electron interference phenomena produced by electron scattering from the oxygen defects whose contribution to the resistance of the tube cannot be obtained by simply summing up their individual contributions.

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