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Taher Amlaki

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

$\mathbb{Z}_2$ invariance of Germanene on MoS$_2$ from first principles

We present a low energy Hamiltonian generalized to describe how the energy bands of germanene ($\rm \overline{Ge}$) are modified by interaction with a substrate or a capping layer. The parameters that enter the Hamiltonian are determined from first-principles relativistic calculations for $\rm \overline{Ge}|$MoS$_2$ bilayers and MoS$_2|\rm \overline{Ge} |$MoS$_2$ trilayers and are used to determine the topological nature of the system. For the lowest energy, buckled germanene structure, the gap depends strongly on how germanene is oriented with respect to the MoS$_2$ layer(s). Topologically non-trivial gaps for bilayers and trilayers can be almost as large as for a free-standing germanene layer.

preprint2016arXiv

Green$'$s function approach to edge states in transition metal dichalcogenides

The semiconducting two-dimensional transition metal dichalcogenides MX$_{2}$ show an abundance of one-dimensional metallic edges and grain boundaries. Standard techniques for calculating edge states typically model nanoribbons, and require the use of supercells. In this paper we formulate a Green$'$s function technique for calculating edge states of (semi-)infinite two-dimensional systems with a single well-defined edge or grain boundary. We express Green$'$s functions in terms of Bloch matrices, constructed from the solutions of a quadratic eigenvalue equation. The technique can be applied to any localized basis representation of the Hamiltonian. Here we use it to calculate edge states of MX$_{2}$ monolayers by means of tight-binding models. Besides the basic zigzag and armchair edges, we study edges with a more general orientation, structurally modifed edges, and grain boundaries. A simple three-band model captures an important part of the edge electronic structures. An eleven-band model comprising all valence orbitals of the M and X atoms, is required to obtain all edge states with energies in the MX$_{2}$ band gap. Here states of odd symmetry with respect to a mirror plane through the layer of M atoms have a dangling-bond character, and tend to pin the Fermi level.

preprint2014arXiv

Band gaps in incommensurable graphene on hexagonal boron nitride

Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction with the substrate is sufficient to open a gap, in contradiction of earlier findings. Using many-body perturbation theory, we find that the small observed gap is what remains after a much larger underlying quasiparticle gap is suppressed by incommensurability. The sensitivity of this suppression to a small modulation of the distance separating graphene from the substrate suggests ways of exposing the larger underlying gap.