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Geert Brocks

Geert Brocks appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phcond-mat.softphysics.chem-phphysics.pop-ph

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Published work

24 published item(s)

preprint2026arXiv

Chemical Origin of Exciton Self-trapping in Cs$_3$Cu$_2$X$_5$ Cesium Copper Halides

Copper halides Cs3Cu2X5 (X=Cl, Br, I) are promising materials for optoelectronic applications due to their high photoluminescence efficiency, stability, and large Stokes shifts. In this work, we uncover the chemical bonding origin of the Stokes shift in these materials using density functional theory calculations. Upon excitation, one [Cu2X5]3- anion undergoes sizeable local distortions, driven by Cu-X and Cu-Cu bond formation. These structural changes coincide with the formation of a self-trapped exciton, where particularly the hole is strongly localized on one anion. Analysis of the electronic structure and bonding reveals reduced antibonding interactions and enhanced bonding character in the excited state, stabilizing the distorted geometry. Our results establish a direct link between orbital-specific hole localization and bond formation. It provides a fundamental understanding of the excitation mechanism in Cs3Cu2X5 and offers design principles to tune optical properties in 0D copper halides.

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preprint2022arXiv

Compound Defects in Halide Perovskites: A First-Principles Study of CsPbI$_3$

Lattice defects affect the long-term stability of halide perovskite solar cells. Whereas simple point defects, i.e., atomic interstitials and vacancies, have been studied in great detail, here we focus on compound defects that are more likely to form under crystal growth conditions, such as compound vacancies or interstitials, and antisites. We identify the most prominent defects in the archetype inorganic perovskite CsPbI$_3$, through first-principles density functional theory (DFT) calculations. We find that under equilibrium conditions at room temperature, the antisite of Pb substituting Cs forms in a concentration comparable to those of the most prominent point defects, whereas the other compound defects are negligible. However, under nonequilibrium thermal and operating conditions, other complexes also become as important as the point defects. Those are the Cs substituting Pb antisite, and, to a lesser extent, the compound vacancies of PbI$_2$ or CsPbI$_3$ units, and the I substituting Cs antisite. These compound defects only lead to shallow or inactive charge carrier traps, which testifies to the electronic stability of the halide perovskites. Under operating conditions with a quasi Fermi level very close to the valence band, deeper traps can develop.

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preprint2022arXiv

Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet

Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.

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preprint2021arXiv

The thermodynamic trends of intrinsic defects in primary halide perovskites: A first-principles study

Defects in halide perovskites play an essential role in determining the efficiency and stability of the resulting optoelectronic devices. Here, we present a systematic study of intrinsic point defects in six primary metal halide perovskites, MAPbI$_3$, MAPbBr$_3$, MAPbCl$_3$, FAPbI$_3$, CsPbI$_3$ and MASnI$_3$, using density functional theory calculations with the SCAN+rVV10 functional. We analyse the impact of changing anions and cations on the defect formation energies and the charge state transitions levels and identify the physical origins underlying the observed trends. Dominant defects in the lead-iodide compounds are the A$^+$ cation interstitials (A = Cs, MA, FA), charge-compensated by I$^-$ interstitials or lead $({2-})$ vacancies. In the lead-bromide and -chloride compounds, halide vacancies become relatively more prominent, and for MAPbBr$_3$, the Pb$^{2+}$ interstitial also becomes important. The trends can be explained in terms of the changes in electrostatic interactions and chemical bonding upon replacing cations and anions. Defect physics in MASnI$_3$ is strongly dominated by tin $({2-})$ vacancies, promoted by the easy oxidation of the tin perovskite. Intrinsically, all compounds are mildly p-doped, except for MASnI$_3$, which is strongly p-doped. All acceptor levels created by defects in the six perovskites are shallow. Some defects, halide vacancies and Pb or Sn interstitials in particular, create deep donor traps. Although these traps might hamper the electronic behavior of MAPbBr$_3$ and MAPbCl$_3$, in iodine-based perovskites their equilibrium concentrations are too small to affect the materials' properties.

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preprint2020arXiv

1D metallic states at 2D transition metal dichalcogenide semiconductor heterojunctions

Two-dimensional (2D) lateral heterojunctions of transition metal dichalcogenides (TMDCs) have become a reality in recent years. Semiconducting TMDC layers in their common H -structure have a nonzero in-plane electric polarization, which is a topological invariant. We show by means of first-principles calculations that lateral 2D heterojunctions between TMDCs with a different polarization generate one-dimensional (1D) metallic states at the junction, even in cases where the different materials are joined epitaxially. The metallicity does not depend upon structural details, and is explained from the change in topological invariant at the junction. Nevertheless, these 1D metals are susceptible to 1D instabilities, such as charge- and spin-density waves, making 2D TMDC heterojunctions ideal systems for studying 1D physics.

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preprint2020arXiv

Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells

Favorable optoelectronic properties and ease of fabrication make NiO a promising hole transport layer for perovskite solar cells. To achieve maximum efficiency, the electronic levels of NiO need to be optimally aligned with those of the perovskite absorber. Applying surface modifiers by adsorbing species on the NiO surface, is one of the most widespread strategies to tune its energy levels. Alkali halides are simple inorganic surface modifiers that have been extensively used in organic optoelectronics, however, rarely studied in perovskite solar cells. Using density functional theory (DFT) calculations, we investigate the effect of single layer adsorption of twenty different alkali halides on the electronic levels of NiO. Our results show that alkali halides can shift the position of the valence band maximum (VBM) of NiO to a surprisingly large extend in both directions, from -3:10 eV to +1:59 eV. We interpret the direction and magnitude of the shift in terms of the surface dipoles, formed by the adsorbed cations and anions, where the magnitude of the VBM shift is a monotonic function of the surface coverage. Our results indicate that with alkali halide surface modifiers, the electronic levels of NiO can be tuned robustly and potentially match those of many perovskite compositions in perovskite solar cells.

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preprint2016arXiv

Green$'$s function approach to edge states in transition metal dichalcogenides

The semiconducting two-dimensional transition metal dichalcogenides MX$_{2}$ show an abundance of one-dimensional metallic edges and grain boundaries. Standard techniques for calculating edge states typically model nanoribbons, and require the use of supercells. In this paper we formulate a Green$'$s function technique for calculating edge states of (semi-)infinite two-dimensional systems with a single well-defined edge or grain boundary. We express Green$'$s functions in terms of Bloch matrices, constructed from the solutions of a quadratic eigenvalue equation. The technique can be applied to any localized basis representation of the Hamiltonian. Here we use it to calculate edge states of MX$_{2}$ monolayers by means of tight-binding models. Besides the basic zigzag and armchair edges, we study edges with a more general orientation, structurally modifed edges, and grain boundaries. A simple three-band model captures an important part of the edge electronic structures. An eleven-band model comprising all valence orbitals of the M and X atoms, is required to obtain all edge states with energies in the MX$_{2}$ band gap. Here states of odd symmetry with respect to a mirror plane through the layer of M atoms have a dangling-bond character, and tend to pin the Fermi level.

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preprint2015arXiv

Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer

Making a metal contact to the two-dimensional semiconductor MoS2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high work function ($\gtrsim 4.7$ eV) metals, the Fermi level is pinned at 0.1-0.3 eV below the conduction band edge of MoS2 for low work function metals, due to the metal-MoS2 interaction. Inserting a boron nitride (BN) monolayer between the metal and the MoS2 disrupts this interaction, and restores the MoS2 electronic structure. Moreover, a BN layer decreases the metal work function of Co and Ni by $\sim 2$ eV, and enables a line-up of the Fermi level with the MoS2 conduction band. Surface modification by adsorbing a single BN layer is a practical method to attain vanishing Schottky barrier heights.

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preprint2014arXiv

Band gaps in incommensurable graphene on hexagonal boron nitride

Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction with the substrate is sufficient to open a gap, in contradiction of earlier findings. Using many-body perturbation theory, we find that the small observed gap is what remains after a much larger underlying quasiparticle gap is suppressed by incommensurability. The sensitivity of this suppression to a small modulation of the distance separating graphene from the substrate suggests ways of exposing the larger underlying gap.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

From spin-polarized interfaces to giant magnetoresistance in organic spin valves

We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces. The magnetoresistance of a Fe|bilayer-C70|Fe spin valve attains a high value of 70% in the linear response regime, but it drops sharply as a function of the applied bias. The current polarization has a value of 80% in linear response, and also decreases as a function of bias. Both these trends can be modelled in terms of prominent spin-dependent Fe|C70 interface states close to the Fermi level, unfolding the potential of spinterface science to control and optimize spin currents.

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preprint2014arXiv

Large potential steps at weakly interacting metal-insulator interfaces

Potential steps exceeding 1 eV are regularly formed at metal|insulator interfaces, even when the interaction between the materials at the interface is weak physisorption. From first-principles calculations on metal|h-BN interfaces we show that these potential steps are only indirectly sensitive to the interface bonding through the dependence of the binding energy curves on the van der Waals interaction. Exchange repulsion forms the main contribution to the interface potential step in the weakly interacting regime, which we show with a simple model based upon a symmetrized product of metal and h-BN wave functions. In the strongly interacting regime, the interface potential step is reduced by chemical bonding.

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preprint2014arXiv

Magnetoresistance in multilayer fullerene spin valves: a first-principles study

Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves comprising bi- and tri-layers of the fullerene molecules C60 and C70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresistance depend sensitively on the interactions at the interfaces between the molecules and the metal surfaces. They are much less affected by the thickness of the molecular layers. A high current polarization (CP > 90%) and magnetoresistance (MR > 100%) at small bias can be attained using C70 layers. In contrast, the current polarization and the magnetoresistance at small bias are vanishingly small for C60 layers. Exploiting a generalized Julli`ere model we can trace the differences in spin-dependent transport between C60 and C70 layers to differences between the molecule-metal interface states. These states also allow one to interpret the current polarization and the magnetoresistance as a function of the applied bias voltage.

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preprint2014arXiv

Schottky barriers at hexagonal boron nitride/metal interfaces: a first principles study

The formation of a Schottky barrier at the interface between a metal and hexagonal boron nitride (h-BN) is studied using density functional theory. For metals whose work functions range from 4.2 to 6.0 eV, we find Schottky barrier heights for holes between 1.2 and 2.3 eV. A central role in determining the Schottky barrier height is played by a potential step of between 0.4 and 1.8 eV that is formed at the metal|h-BN interface and effectively lowers the metal work function. If h-BN is physisorbed, as is the case on fcc Cu, Al, Au, Ag and Pt(111) substrates, the interface potential step is described well by a universal function that depends only on the distance separating h-BN from the metal surface. The interface potential step is largest when h-BN is chemisorbed, which is the case for hcp Co and Ti (0001) and for fcc Ni and Pd (111) substrates.

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preprint2013arXiv

Field effect doping of graphene in metal|dielectric|graphene heterostructures: a model based upon first-principles calculations

We study how the Fermi energy of a graphene monolayer separated from a conducting substrate by a dielectric spacer depends on the properties of the substrate and on an applied voltage. An analytical model is developed that describes the Fermi level shift as a function of the gate voltage, of the substrate work function, and of the type and thickness of the dielectric spacer. The parameters of this model, that should describe the effect of gate electrodes in field-effect devices, can be obtained from density functional theory (DFT) calculations on single layers or interfaces. The doping of graphene in metal|dielectric|graphene structures is found to be determined not only by the difference in work function between the metal and graphene and the dielectric properties of the spacer but potential steps that result from details of the microscopic bonding at the interfaces also play an important role. The doping levels predicted by the model agree very well with the results obtained from first-principles DFT calculations on metal|dielectric|graphene structures with the metals Al, Co, Ni, Cu, Pd, Ag, Pt or Au, and a h-BN or vacuum dielectric spacer.

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preprint2011arXiv

CO adsorption on Pt induced Ge nanowires

Using density functional theory, we investigate the possible adsorption sites of CO molecules on the recently discovered Pt induced Ge nanowires on Ge(001). Calculated STM images are compared to experimental STM images to identify the experimentally observed adsorption sites. The CO molecules are found to adsorb preferably onto the Pt atoms between the Ge nanowire dimer segments. This adsorption site places the CO in between two nanowire dimers, pushing them outward, blocking the nearest equivalent adsorption sites. This explains the observed long-range repulsive interaction between CO molecules on these Pt induced nanowires.

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preprint2011arXiv

DFT study of Pt-induced Ge(001) reconstructions

Pt deposited on a Ge(001) surface spontaneously forms nanowire arrays. These nanowires are thermodynamically stable and can be hundreds of atoms long. The nanowires only occur on a reconstructed Pt-Ge-surface where they fill the troughs between the dimer rows on the surface. This unique connection between the nanowires and the underlying substrate make a thorough understanding of the latter necessary for understanding the growth of the nanowires. In this paper we study possible surface reconstructions containing 0.25 and 0.5 of a monolayer of Pt. Comparison of calculated STM images to experimental STM images of the surface reconstruction reveal that the Pt atoms are located in the top layer, creating a structure with rows of alternating Pt-Ge and Ge-Ge dimers in a c(4x2) arrangement. Our results also show that Pt atoms in the second or third layer can not be responsible for the experimentally observed STM images.

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preprint2011arXiv

Electrostatic doping of graphene through ultrathin hexagonal boron nitride films

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene doping depends on the thickness of the h-BN layer and on a potential difference applied between Cu and graphene. We develop an analytical model that describes the doping very well, allowing us to identify the key parameters that govern the device behaviour. A predicted intrinsic doping of graphene is particularly prominent for ultrathin h-BN layers and should be observable in experiment. It is dominated by novel interface terms that we evaluate from DFT calculations for the individual materials and for interfaces between h-BN and Cu or graphene.

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preprint2011arXiv

Pt-induced nanowires on Ge(001): a DFT study

We study formation of the nanowires formed after deposition of Pt on a Ge(001) surface. The nanowires form spontaneously after high temperature annealing. They are thermodynamically stable, only one atom wide and up to a few hundred atoms long. Ab initio density functional theory calculations are performed to identify possible structures of the Pt-Ge (001) surface with nanowires on top. A large number of structures is studied. With nanowires that are formed out of Pt or Ge dimers or mixed Pt-Ge dimers. By comparing simulated scanning tunneling microscopy images with experimental ones we model the formation of the nanowires and identify the geometries of the different phases in the formation process. We find that the formation of nanowires on a Pt-Ge(001) surface is a complex process based on increasing the Pt density in the top layers of the Ge(001) surface. Most remarkably we find the nanowires to consist of germanium dimers placed in troughs lined by mixed Pt-Ge dimer rows.

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preprint2011arXiv

The Formation of Self-Assembled Nanowire Arrays on Ge(001): a DFT Study of Pt Induced Nanowire Arrays

Nanowire (NW) arrays form spontaneously after high temperature annealing of a submonolayer deposition of Pt on a Ge(001) surface. These NWs are a single atom wide, with a length limited only by the underlying beta-terrace to which they are uniquely connected. Using ab-initio density functional theory (DFT) calculations we study possible geometries of the NWs and substrate. Direct comparison to experiment is made via calculated scanning tunneling microscope (STM) images. Based on these images, geometries for the beta-terrace and the NWs are identified, and a formation path for the nanowires as function of increasing local Pt density is presented. We show the beta-terrace to be a dimer row surface reconstruction with a checkerboard pattern of Ge-Ge and Pt-Ge dimers. Most remarkably, comparison of calculated to experimental STM images shows the NWs to consist of germanium atoms embedded in the Pt-lined troughs of the underlying surface, contrary to what was assumed previously in experiments.

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preprint2009arXiv

First principles modelling of magnesium titanium hydrides

Mixing Mg with Ti leads to a hydride Mg(x)Ti(1-x)H2 with markedly improved (de)hydrogenation properties for x < 0.8, as compared to MgH2. Optically, thin films of Mg(x)Ti(1-x)H2 have a black appearance, which is remarkable for a hydride material. In this paper we study the structure and stability of Mg(x)Ti(1-x)H2, x= 0-1 by first-principles calculations at the level of density functional theory. We give evidence for a fluorite to rutile phase transition at a critical composition x(c)= 0.8-0.9, which correlates with the experimentally observed sharp decrease in (de)hydrogenation rates at this composition. The densities of states of Mg(x)Ti(1-x)H2 have a peak at the Fermi level, composed of Ti d states. Disorder in the positions of the Ti atoms easily destroys the metallic plasma, however, which suppresses the optical reflection. Interband transitions result in a featureless optical absorption over a large energy range, causing the black appearance of Mg(x)Ti(1-x)H2.

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preprint2009arXiv

First-principles study of the dipole layer formation at metal-organic interfaces

We study the dipole layer formed at metal-organic interfaces by means of first-principles calculations. Interface dipoles are monitored by calculating the work function change of Au, Ag, Al, Mg and Ca surfaces upon adsorption of a monolayer of PTCDA (3,4,9,10-perylene-tetra-carboxylic-di-anhydride), perylene or benzene molecules. Adsorption of PTCDA leads to pinning of the work function for a range of metal substrates. It gives interface dipoles that compensate for the difference in the clean metal work functions, leading to a nearly constant work function. In contrast, adsorption of benzene always results in a decrease of the work function, which is relatively constant for all metal substrates. Both effects are found in perylene, where adsorption on low work function metals gives work function pinning, whereas adsorption on high work function metals gives work function lowering. The work function changes upon adsorption are analyzed and interpreted in terms of two competing effects. If the molecule and substrate interact weakly, the molecule pushes electrons into the surface, which lowers the work function. If the metal work function is sufficiently low with respect to the unoccupied states of the molecule, electrons are donated into these states, which increases the binding and the work function.

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preprint2008arXiv

Formation of Pt induced Ge atomic nanowires on Pt/Ge(001): a DFT study

Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a mixed Pt-Ge surface after high temperature annealing. We study possible structures of the mixed surface and the nanowires by total energy (density functional theory) calculations. Experimental scanning tunneling microscopy images are compared to the calculated local densities of states. On the basis of this comparison and the stability of the structures, we conclude that the formation of nanowires is driven by an increased concentration of Pt atoms in the Ge surface layers. Surprisingly, the atomic nanowires consist of Ge instead of Pt atoms.

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preprint2007arXiv

Dipole Formation at Interfaces of Alkanethiolate Self-assembled Monolayers and Ag(111)

The formation of interface dipoles in self-assembled monolayers (SAMs) of --CH$_3$ and --CF$_3$ terminated short-chain alkanethiolates on Ag(111) is studied by means of density functional theory calculations. The interface dipoles are characterized by monitoring the change in the surface work function upon adsorption of the SAM. We compare results obtained for SAMs in structures with a different packing density of molecules, i.e. {$(\sqrt{7}\times\sqrt{7}) R19.1^{\circ}$}, {$(\sqrt{3}\times\sqrt{3}) R30^{\circ}$}, and {p(2$\times$2)}. The work function of alkanethiolate SAMs on silver depends weakly on the packing density; that of fluorinatedalkanethiolates shows a stronger dependance. The results are analyzed in terms of two nearly independent contributions to the interface dipole. These originate respectively from the molecular dipoles and from a charge transfer between the metal surface and the molecules. The charge transfer is determined by the silver--sulfur bond and it is independent of the electronegativity of the molecules.

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preprint2007arXiv

Substrate-induced bandgap in graphene on hexagonal boron nitride

We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a boron atom, the other centered above a BN ring. The resulting inequivalence of the two carbon sites leads to the opening of a gap of 53 meV at the Dirac points of graphene and to finite masses for the Dirac fermions. Alternative orientations of the graphene sheet on the BN substrate generate similar band gaps and masses. The band gap induced by the BN surface can greatly improve room temperature pinch-off characteristics of graphene-based field effect transistors.

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