Greens function approach to edge states in transition metal dichalcogenides
The semiconducting two-dimensional transition metal dichalcogenides MX show an abundance of one-dimensional metallic edges and grain boundaries. Standard techniques for calculating edge states typically model nanoribbons, and require the use of supercells. In this paper we formulate a Greens function technique for calculating edge states of (semi-)infinite two-dimensional systems with a single well-defined edge or grain boundary. We express Greens functions in terms of Bloch matrices, constructed from the solutions of a quadratic eigenvalue equation. The technique can be applied to any localized basis representation of the Hamiltonian. Here we use it to calculate edge states of MX monolayers by means of tight-binding models. Besides the basic zigzag and armchair edges, we study edges with a more general orientation, structurally modifed edges, and grain boundaries. A simple three-band model captures an important part of the edge electronic structures. An eleven-band model comprising all valence orbitals of the M and X atoms, is required to obtain all edge states with energies in the MX band gap. Here states of odd symmetry with respect to a mirror plane through the layer of M atoms have a dangling-bond character, and tend to pin the Fermi level.