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Menno Bokdam

Menno Bokdam appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

10 published item(s)

preprint2024arXiv

Tuning Einstein Oscillator Frequencies of Cation Rattlers: A Molecular Dynamics Study of the Lattice Thermal Conductivity of CsPbBr$_3$

The pure CsPbBr$_3$ perovskite is an archetypal example of a strongly anharmonic crystal that poses a major challenge for computational methods to describe its thermodynamic properties. Its lattice dynamics exhibits characteristics of a phonon liquid: mode coupling, low lifetimes and `rattlers'. To study the thermal conduction in this crystal, including the effect of dynamic disorder introduced by the Cs rattlers, we apply large-scale molecular dynamics (MD) simulations combined with machine-learning interatomic potentials. We simulate its ultra-low lattice thermal conductivity in the cubic phase and obtain phonon spectra by measuring velocity autocorrelation functions. The thermal conductivity at 500 K is computed to be $0.53\pm0.04\frac{\rm W}{\rm m K}$, which is similar to that of demineralized water under normal indoor conditions. MD based insight into the heat transport mechanism of halide perovskites is presented. In the analysis the Cs cations are interpreted as damped Einstein oscillators. The phonon bandstructure of a system with artificially raised Cs masses demonstrates an increased interference of the Cs rattling with the acoustic phonon modes. We show that the thermal conductivity of the CsPbBr$_3$ perovskite can still be slightly decreased by tuning the cation rattling frequency into the range of the low lying acoustic mode

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Anharmonic lattice dynamics in large thermodynamic ensembles with machine-learning force fields: CsPbBr$_{3}$ a phonon-liquid with Cs rattlers

The phonon dispersion relations of crystal lattices can often be well-described with the harmonic approximation. However, when the potential energy landscape exhibits more anharmonicity, for instance, in case of a weakly bonded crystal or when the temperature is raised, the approximation fails to capture all crystal lattice dynamics properly. Phonon-phonon scattering mechanisms become important and limit the phonon lifetimes. We take a novel approach and simulate the phonon dispersion of a complex dynamic solid at elevated temperatures with Machine-Learning Force Fields of near-first-principles accuracy. Through large-scale molecular dynamics simulations the projected velocity autocorrelation function (PVACF) is obtained. We apply this approach to the inorganic perovskite CsPbBr$_{3}$. Imaginary modes in the harmonic picture of this perovskite are absent in the PVACF, indicating a dynamic stabilization of the crystal. The anharmonic nature of the potential makes a decoupling of the system into a weakly interacting phonon gas impossible. The phonon spectra of CsPbBr$_{3}$ show the characteristics of a phonon liquid. Rattling motions of the Cs$^{+}$ cations are studied by self-correlation functions and are shown to be nearly dispersionless motions of the cations with a frequency of $\sim$0.8THz within the lead-bromide framework.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Room temperature dynamic correlation between methylammonium molecules in lead-iodine based perovskites: An ab-initio molecular dynamics perspective

The high efficiency of lead organo-metal-halide perovskite solar cells has raised many questions about the role of the methylammonium (MA) molecules in the Pb-I framework. Experiments indicate that the MA molecules are able to 'freely' spin around at room temperature even though they carry an intrinsic dipole moment. We have performed large supercell (2592 atoms) finite temperature ab-initio molecular dynamics calculations to study the correlation between the molecules in the framework. An underlying long range anti-ferroelectric ordering of the molecular dipoles is observed. The dynamical correlation between neighboring molecules shows a maximum around room temperature in the mid-temperature phase. In this phase, the rotations are slow enough to (partially) couple to neighbors via the Pb-I cage. This results in a collective motion of neighboring molecules in which the cage acts as the mediator. At lower and higher temperatures the motions are less correlated.

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preprint2016arXiv

$\mathbb{Z}_2$ invariance of Germanene on MoS$_2$ from first principles

We present a low energy Hamiltonian generalized to describe how the energy bands of germanene ($\rm \overline{Ge}$) are modified by interaction with a substrate or a capping layer. The parameters that enter the Hamiltonian are determined from first-principles relativistic calculations for $\rm \overline{Ge}|$MoS$_2$ bilayers and MoS$_2|\rm \overline{Ge} |$MoS$_2$ trilayers and are used to determine the topological nature of the system. For the lowest energy, buckled germanene structure, the gap depends strongly on how germanene is oriented with respect to the MoS$_2$ layer(s). Topologically non-trivial gaps for bilayers and trilayers can be almost as large as for a free-standing germanene layer.

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preprint2016arXiv

Role of Polar Phonons in the Photo Excited State of Metal Halide Perovskites

The development of high efficiency perovskite solar cells has sparked a multitude of measurements on the optical properties of these materials. For the most studied methylammonium(MA)PbI$_3$ perovskite, a large range (6-55 meV) of exciton binding energies has been reported by various experiments. The existence of excitons at room temperature is unclear. For the MAPb$X_3$ perovskites we report on relativistic $GW$-BSE calculations. This method is capable to directly calculate excitonic properties from first-principles. At low temperatures it predicts exciton binding energies in agreement with the reported 'large' values. For MAPbI$_3$, phonon modes present in this frequency range have a negligible contribution to the ionic screening. By calculating the polarisation in time from finite temperature molecular dynamics, we show that at room temperature this does not change. We therefore exclude ionic screening as an explanation for the experimentally observed reduction of the exciton binding energy at room temperature.

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preprint2014arXiv

Band gaps in incommensurable graphene on hexagonal boron nitride

Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction with the substrate is sufficient to open a gap, in contradiction of earlier findings. Using many-body perturbation theory, we find that the small observed gap is what remains after a much larger underlying quasiparticle gap is suppressed by incommensurability. The sensitivity of this suppression to a small modulation of the distance separating graphene from the substrate suggests ways of exposing the larger underlying gap.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large potential steps at weakly interacting metal-insulator interfaces

Potential steps exceeding 1 eV are regularly formed at metal|insulator interfaces, even when the interaction between the materials at the interface is weak physisorption. From first-principles calculations on metal|h-BN interfaces we show that these potential steps are only indirectly sensitive to the interface bonding through the dependence of the binding energy curves on the van der Waals interaction. Exchange repulsion forms the main contribution to the interface potential step in the weakly interacting regime, which we show with a simple model based upon a symmetrized product of metal and h-BN wave functions. In the strongly interacting regime, the interface potential step is reduced by chemical bonding.

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preprint2014arXiv

Schottky barriers at hexagonal boron nitride/metal interfaces: a first principles study

The formation of a Schottky barrier at the interface between a metal and hexagonal boron nitride (h-BN) is studied using density functional theory. For metals whose work functions range from 4.2 to 6.0 eV, we find Schottky barrier heights for holes between 1.2 and 2.3 eV. A central role in determining the Schottky barrier height is played by a potential step of between 0.4 and 1.8 eV that is formed at the metal|h-BN interface and effectively lowers the metal work function. If h-BN is physisorbed, as is the case on fcc Cu, Al, Au, Ag and Pt(111) substrates, the interface potential step is described well by a universal function that depends only on the distance separating h-BN from the metal surface. The interface potential step is largest when h-BN is chemisorbed, which is the case for hcp Co and Ti (0001) and for fcc Ni and Pd (111) substrates.

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preprint2013arXiv

Field effect doping of graphene in metal|dielectric|graphene heterostructures: a model based upon first-principles calculations

We study how the Fermi energy of a graphene monolayer separated from a conducting substrate by a dielectric spacer depends on the properties of the substrate and on an applied voltage. An analytical model is developed that describes the Fermi level shift as a function of the gate voltage, of the substrate work function, and of the type and thickness of the dielectric spacer. The parameters of this model, that should describe the effect of gate electrodes in field-effect devices, can be obtained from density functional theory (DFT) calculations on single layers or interfaces. The doping of graphene in metal|dielectric|graphene structures is found to be determined not only by the difference in work function between the metal and graphene and the dielectric properties of the spacer but potential steps that result from details of the microscopic bonding at the interfaces also play an important role. The doping levels predicted by the model agree very well with the results obtained from first-principles DFT calculations on metal|dielectric|graphene structures with the metals Al, Co, Ni, Cu, Pd, Ag, Pt or Au, and a h-BN or vacuum dielectric spacer.

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preprint2011arXiv

Electrostatic doping of graphene through ultrathin hexagonal boron nitride films

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene doping depends on the thickness of the h-BN layer and on a potential difference applied between Cu and graphene. We develop an analytical model that describes the doping very well, allowing us to identify the key parameters that govern the device behaviour. A predicted intrinsic doping of graphene is particularly prominent for ultrathin h-BN layers and should be observable in experiment. It is dominated by novel interface terms that we evaluate from DFT calculations for the individual materials and for interfaces between h-BN and Cu or graphene.

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