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Paul J. Kelly

Paul J. Kelly appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

22 published item(s)

preprint2024arXiv

A DFT study of the structural and electronic properties of single and double acceptor dopants in MX2 monolayers

Density functional theory calculations are used to systematically investigate the structural and electronic properties of MX$_2$ transition metal dichalcogenide monolayers with M = Cr, Mo, W and X = S, Se, Te that are doped with single (V, Nb, Ta) and double (Ti, Zr, Hf) acceptor dopants on the M site with local $D_{3h}$ symmetry in the dilute limit. Three impurity levels that arise from intervalley scattering are found above the valence band maxima (VBM): an orbitally doubly degenerate $e'$ level bound to the $K/K'$ VBM and a singly degenerate $a'_1$ level bound to the $Γ$-point VBM. Replacing S with Se or Te lowers the $Γ$ point VBM substantially with respect to the $K/K'$ VBM bringing the $a'_1$ level down with it. The relative positions of the impurity levels that determine the different structural and electronic properties of the impurities in $p$-doped MX$_2$ monolayers can thus be tuned by replacing S with Se or Te. Single acceptors introduce a magnetic moment of 1$\, μ_{\rm B}$ in all MX$_2$ monolayers. Out-of-plane magnetic anisotropy energies as large as 10 meV/dopant atom are found thereby satisfying an essential condition for long-range ferromagnetic ordering in two dimensions. For double acceptors in MS$_2$ monolayers, both holes occupy the high-lying $a'_1$ level with opposite spins so there is no magnetic moment; in MSe$_2$ and MTe$_2$ monolayers the holes occupy the $e'$ level, a Jahn-Teller (JT) distortion wins the competition with exchange splitting resulting in the quenching of the magnetic moments. Even when the JT distortion is disallowed, magnetic double acceptors have a large in-plane magnetic anisotropy energy that is incompatible with long-range magnetic ordering in two dimensions. ....

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preprint2022arXiv

Calculating the spin memory loss at Cu$|$metal interfaces from first principles

The role played by interfaces in metallic multilayers is not only to change the momenta of incident electrons; their symmetry lowering also results in an enhancement of the effects of spin-orbit coupling, in particular the flipping of the spins of conduction electrons. This leads to a significant reduction of a spin current through a metallic interface that is quantitatively characterized by a dimensionless parameter $δ$ called the spin memory loss (SML) parameter, the interface counterpart of the spin-flip diffusion length for bulk metals. In this paper we use first-principles scattering calculations that include temperature-induced lattice and spin disorder to systematically study three parameters that govern spin transport through metallic interfaces of Cu with Pt, Pd, Py (permalloy) and Co: the interface resistance, spin polarization and the SML. The value of $δ$ for a Cu$|$Pt interface is found to be comparable to what we recently reported for a Au$|$Pt interface [Gupta {\it et al.}, Phys. Rev. Lett. 124, 087702 (2020)]. For Cu$|$Py and Cu$|$Co interfaces, $δ$ decreases monotonically with increasing temperature to become negligibly small at room temperature. The calculated results are in good agreement with currently available experimental values in the literature. Inserting a Cu layer between Pt and the Py or Co layers slightly increases the total spin current dissipation at these "compound" interfaces.

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preprint2016arXiv

$\mathbb{Z}_2$ invariance of Germanene on MoS$_2$ from first principles

We present a low energy Hamiltonian generalized to describe how the energy bands of germanene ($\rm \overline{Ge}$) are modified by interaction with a substrate or a capping layer. The parameters that enter the Hamiltonian are determined from first-principles relativistic calculations for $\rm \overline{Ge}|$MoS$_2$ bilayers and MoS$_2|\rm \overline{Ge} |$MoS$_2$ trilayers and are used to determine the topological nature of the system. For the lowest energy, buckled germanene structure, the gap depends strongly on how germanene is oriented with respect to the MoS$_2$ layer(s). Topologically non-trivial gaps for bilayers and trilayers can be almost as large as for a free-standing germanene layer.

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preprint2016arXiv

Giant room temperature interface spin Hall and inverse spin Hall effects

The spin Hall angle (SHA) is a measure of the efficiency with which a transverse spin current is generated from a charge current by the spin-orbit coupling and disorder in the spin Hall effect (SHE). In a study of the SHE for a Pt$|$Py (Py=Ni$_{80}$Fe$_{20}$) bilayer using a first-principles scattering approach, we find a SHA that increases monotonically with temperature and is proportional to the resistivity for bulk Pt. By decomposing the room temperature SHE and inverse SHE currents into bulk and interface terms, we discover a giant interface SHA that dominates the total inverse SHE current with potentially major consequences for applications.

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preprint2016arXiv

Spin-orbit-coupling induced torque in ballistic domain walls: equivalence of charge-pumping and nonequilibrium magnetization formalisms

To study the effect of spin-orbit coupling (SOC) on spin-transfer torque in magnetic materials, we have implemented two theoretical formalisms that can accommodate SOC. Using the "charge-pumping" formalism, we find two contributions to the out-of-plane spin-transfer torque parameter $β$ in ballistic Ni domain walls (DWs). For short DWs, the nonadiabatic reflection of conduction electrons caused by the rapid spatial variation of the exchange potential results in an out-of-plane torque that increases rapidly with decreasing DW length. For long DWs, the Fermi level conduction channel anisotropy that gives rise to an intrinsic DW resistance in the presence of SOC leads to a linear dependence of $β$ on the DW length. To understand this counterintuitive divergence of $β$ in the long DW limit, we use the "nonequilibrium magnetization" formalism to examine the spatially resolved spin-transfer torque. The SOC-induced out-of-plane torque in ballistic DWs is found to be quantitatively consistent with the values obtained using the charge-pumping calculations indicating the equivalence of the two theoretical methods.

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preprint2015arXiv

Direct Method for Calculating Temperature-Dependent Transport Properties

We show how temperature-induced disorder can be combined in a direct way with first-principles scattering theory to study diffusive transport in real materials. Excellent (good) agreement with experiment is found for the resistivity of Cu, Pd, Pt (and Fe) when lattice (and spin) disorder are calculated from first principles. For Fe, the agreement with experiment is limited by how well the magnetization (of itinerant ferromagnets) can be calculated as a function of temperature. By introducing a simple Debye-like model of spin disorder parameterized to reproduce the experimental magnetization, the temperature dependence of the average resistivity, the anisotropic magnetoresistance and the spin polarization of a Ni$_{80}$Fe$_{20}$ alloy are calculated and found to be in good agreement with existing data. Extension of the method to complex, inhomogeneous materials as well as to the calculation of other finite-temperature physical properties within the adiabatic approximation is straightforward.

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preprint2014arXiv

Band gaps in incommensurable graphene on hexagonal boron nitride

Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction with the substrate is sufficient to open a gap, in contradiction of earlier findings. Using many-body perturbation theory, we find that the small observed gap is what remains after a much larger underlying quasiparticle gap is suppressed by incommensurability. The sensitivity of this suppression to a small modulation of the distance separating graphene from the substrate suggests ways of exposing the larger underlying gap.

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preprint2014arXiv

Gilbert damping in noncollinear ferromagnets

The precession and damping of a collinear magnetization displaced from its equilibrium are described by the Landau-Lifshitz-Gilbert equation. For a noncollinear magnetization, it is not known how the damping should be described. We use first-principles scattering theory to investigate the damping in one-dimensional transverse domain walls (DWs) of the important ferromagnetic alloy Ni$_{80}$Fe$_{20}$ and interpret the results in terms of phenomenological models. The damping is found to depend not only on the magnetization texture but also on the specific dynamic modes of Bloch and Néel DWs. Even in the highly disordered Ni$_{80}$Fe$_{20}$ alloy, the damping is found to be remarkably nonlocal.

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preprint2014arXiv

Interface enhancement of Gilbert damping from first-principles

The enhancement of Gilbert damping observed for Ni80Fe20 (Py) films in contact with the non-magnetic metals Cu, Pd, Ta and Pt, is quantitatively reproduced using first-principles scattering theory. The "spin-pumping" theory that qualitatively explains its dependence on the Py thickness is generalized to include a number of factors known to be important for spin transport through interfaces. Determining the parameters in this theory from first-principles shows that interface spin-flipping makes an essential contribution to the damping enhancement. Without it, a much shorter spin-flip diffusion length for Pt would be needed than the value we calculate independently.

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preprint2014arXiv

Large potential steps at weakly interacting metal-insulator interfaces

Potential steps exceeding 1 eV are regularly formed at metal|insulator interfaces, even when the interaction between the materials at the interface is weak physisorption. From first-principles calculations on metal|h-BN interfaces we show that these potential steps are only indirectly sensitive to the interface bonding through the dependence of the binding energy curves on the van der Waals interaction. Exchange repulsion forms the main contribution to the interface potential step in the weakly interacting regime, which we show with a simple model based upon a symmetrized product of metal and h-BN wave functions. In the strongly interacting regime, the interface potential step is reduced by chemical bonding.

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preprint2014arXiv

Schottky barriers at hexagonal boron nitride/metal interfaces: a first principles study

The formation of a Schottky barrier at the interface between a metal and hexagonal boron nitride (h-BN) is studied using density functional theory. For metals whose work functions range from 4.2 to 6.0 eV, we find Schottky barrier heights for holes between 1.2 and 2.3 eV. A central role in determining the Schottky barrier height is played by a potential step of between 0.4 and 1.8 eV that is formed at the metal|h-BN interface and effectively lowers the metal work function. If h-BN is physisorbed, as is the case on fcc Cu, Al, Au, Ag and Pt(111) substrates, the interface potential step is described well by a universal function that depends only on the distance separating h-BN from the metal surface. The interface potential step is largest when h-BN is chemisorbed, which is the case for hcp Co and Ti (0001) and for fcc Ni and Pd (111) substrates.

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preprint2014arXiv

Tuning ferromagnetism at interfaces between insulating perovskite oxides

We use density functional theory calculations to show that the LaAlO3|SrTiO3 interface between insulating perovskite oxides is borderline in satisfying the Stoner criterion for itinerant ferromagnetism and explore other oxide combinations with a view to satisfying it more amply. The larger lattice parameter of an LaScO3|BaTiO3 interface is found to be less favorable than the greater interface distortion of LaAlO3|CaTiO3. Compared to LaAlO3|SrTiO3, the latter is predicted to exhibit robust magnetism with a larger saturation moment and a higher Curie temperature. Our results provide support for a "two phase" picture of coexistent superconductivity and ferromagnetism.

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preprint2013arXiv

Field effect doping of graphene in metal|dielectric|graphene heterostructures: a model based upon first-principles calculations

We study how the Fermi energy of a graphene monolayer separated from a conducting substrate by a dielectric spacer depends on the properties of the substrate and on an applied voltage. An analytical model is developed that describes the Fermi level shift as a function of the gate voltage, of the substrate work function, and of the type and thickness of the dielectric spacer. The parameters of this model, that should describe the effect of gate electrodes in field-effect devices, can be obtained from density functional theory (DFT) calculations on single layers or interfaces. The doping of graphene in metal|dielectric|graphene structures is found to be determined not only by the difference in work function between the metal and graphene and the dielectric properties of the spacer but potential steps that result from details of the microscopic bonding at the interfaces also play an important role. The doping levels predicted by the model agree very well with the results obtained from first-principles DFT calculations on metal|dielectric|graphene structures with the metals Al, Co, Ni, Cu, Pd, Ag, Pt or Au, and a h-BN or vacuum dielectric spacer.

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preprint2012arXiv

Prediction of thickness limits of ideal polar ultrathin films

Competition between electronic and atomic reconstruction is a constantly recurring theme in transition-metal oxides. We use density functional theory calculations to study this competition for a model system consisting of a thin film of the polar, infinite-layer structure ACuO2 (A=Ca, Sr, Ba) grown on a nonpolar, perovskite SrTiO3 substrate. A transition from the bulk planar structure to a chain-type thin film accompanied by substantial changes to the electronic structure is predicted for a SrCuO2 film fewer than five unit cells thick. An analytical model explains why atomic reconstruction becomes more favorable than electronic reconstruction as the film becomes thinner, and suggests that similar considerations should be valid for other polar films.

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preprint2012arXiv

Spin Pumping and Spin Transfer

Spin pumping is the emission of a spin current by a magnetization dynamics while spin transfer stands for the excitation of magnetization by spin currents. Using Onsager's reciprocity relations we prove that spin pumping and spin-transfer torques are two fundamentally equivalent dynamic processes in magnetic structures with itinerant electrons. We review the theory of the coupled motion of the magnetization order parameter and electron for textured bulk ferromagnets (e.g. containing domain walls) and heterostructures (such as spin valves). We present first-principles calculations for the material-dependent damping parameters of magnetic alloys. Theoretical and experimental results agree in general well.

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preprint2012arXiv

Spin-orbit-coupling induced domain-wall resistance in diffusive ferromagnets

We investigate diffusive transport through a number of domain wall (DW) profiles of the important magnetic alloy Permalloy taking into account simultaneously noncollinearity, alloy disorder, and spin-orbit coupling fully quantum mechanically, from first principles. In addition to observing the known effects of magnetization mistracking and anisotropic magnetoresistance, we discover a not-previously identified contribution to the resistance of a DW that comes from spin-orbit-coupling-mediated spin-flip scattering in a textured diffusive ferromagnet. This adiabatic DW resistance, which should exist in all diffusive DWs, can be observed by varying the DW width in a systematic fashion in suitably designed nanowires.

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preprint2011arXiv

A unified first-principles study of Gilbert damping, spin-flip diffusion and resistivity in transition metal alloys

Using a formulation of first-principles scattering theory that includes disorder and spin-orbit coupling on an equal footing, we calculate the resistivity $ρ$, spin flip diffusion length $l_{sf}$ and the Gilbert damping parameter $α$ for Ni$_{1-x}$Fe$_x$ substitutional alloys as a function of $x$. For the technologically important Ni$_{80}$Fe$_{20}$ alloy, permalloy, we calculate values of $ρ= 3.5 \pm 0.15$ $μ$Ohm-cm, $l_{sf}=5.5 \pm 0.3$ nm, and $α= 0.0046 \pm 0.0001$ compared to experimental low-temperature values in the range $4.2-4.8$ $μ$Ohm-cm for $ρ$, $5.0-6.0$ nm for $l_{sf}$, and $0.004-0.013$ for $α$ indicating that the theoretical formalism captures the most important contributions to these parameters.

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preprint2011arXiv

Electrostatic doping of graphene through ultrathin hexagonal boron nitride films

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene doping depends on the thickness of the h-BN layer and on a potential difference applied between Cu and graphene. We develop an analytical model that describes the doping very well, allowing us to identify the key parameters that govern the device behaviour. A predicted intrinsic doping of graphene is particularly prominent for ultrathin h-BN layers and should be observable in experiment. It is dominated by novel interface terms that we evaluate from DFT calculations for the individual materials and for interfaces between h-BN and Cu or graphene.

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preprint2011arXiv

First-principles calculations of magnetization relaxation in pure Fe, Co, and Ni with frozen thermal lattice disorder

The effect of the electron-phonon interaction on magnetization relaxation is studied within the framework of first-principles scattering theory for Fe, Co, and Ni by displacing atoms in the scattering region randomly with a thermal distribution. This "frozen thermal lattice disorder" approach reproduces the non-monotonic damping behaviour observed in ferromagnetic resonance measurements and yields reasonable quantitative agreement between calculated and experimental values. It can be readily applied to alloys and easily extended by determining the atomic displacements from ab initio phonon spectra.

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preprint2011arXiv

Ni(111)|Graphene|h-BN Junctions as Ideal Spin Injectors

Deposition of graphene on top of hexagonal boron nitride (h-BN) was very recently demonstrated while graphene is now routinely grown on Ni. Because the in-plane lattice constants of graphite, h-BN, graphite-like BC2N and of the close-packed surfaces of Co, Ni and Cu match almost perfectly, it should be possible to prepare ideal interfaces between these materials which are respectively, a semimetal, insulator, semiconductor, ferromagnetic and nonmagnetic metals. Using parameter-free energy minimization and electronic transport calculations, we show how h-BN can be combined with the perfect spin filtering property of Ni|graphite and Co|graphite interfaces to make perfect tunnel junctions or ideal spin injectors (SI) with any desired resistance-area product.

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preprint2010arXiv

Polarity-induced oxygen vacancies at LaAlO3|SrTiO3 interfaces

Using first-principles density functional theory calculations, we find a strong position and thickness dependence of the formation energy of oxygen vacancies in LaAlO3|SrTiO3 (LAO|STO) multilayers and interpret this with an analytical capacitor model. Oxygen vacancies are preferentially formed at p-type SrO|AlO2 rather than at n-type LaO|TiO2 interfaces; the excess electrons introduced by the oxygen vacancies reduce their energy by moving to the n-type interface. This asymmetric behavior makes an important contribution to the conducting (insulating) nature of n-type (p-type) interfaces while providing a natural explanation for the failure to detect evidence for the polar catastrophe in the form of core level shifts.

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preprint2007arXiv

Substrate-induced bandgap in graphene on hexagonal boron nitride

We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a boron atom, the other centered above a BN ring. The resulting inequivalence of the two carbon sites leads to the opening of a gap of 53 meV at the Dirac points of graphene and to finite masses for the Dirac fermions. Alternative orientations of the graphene sheet on the BN substrate generate similar band gaps and masses. The band gap induced by the BN surface can greatly improve room temperature pinch-off characteristics of graphene-based field effect transistors.

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