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Praneeth Ranga

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cond-mat.mtrl-sci physics.app-ph cond-mat.mes-hall

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preprint2022arXiv

4.4 kV $β$ -Ga $_2$ O $_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^2$

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_2$ O $_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L $_{GD}$ = 34.5 $μ$ m exhibits an ON current (I $_{DMAX}$ ) of 56 mA/mm, a high I $_{ON}$ /I $_{OFF}$ ratio $>$ 10 $^8$ and a very low reverse leakage until catastrophic breakdown at $\sim$ 4.4kV. The highest measurable V $_{BR}$ recorded was 4.57 kV (L $_{GD}$ = 44.5 $μ$ m). An LFOM of 132 MW/cm $^2$ was calculated for a V $_{BR}$ of $\sim$ 4.4 kV. The reported results are the first $>$ 4kV-class Ga $_2$ O $_3$ transistors to surpass the theoretical FOM of Silicon. These are also the highest I $_{DMAX}$ and lowest R $_{ON}$ values achieved simultaneously for any $β$ -Ga $_2$ O $_3$ device with V $_{BR}$ $>$ 4kV to date. This work highlights that high breakdown voltages (V $_{BR}$ ), high lateral figure of merit (LFOM) and high ON currents can be achieved simultaneously in $β$ -Ga $_2$ O $_3$ lateral transistors.

preprint2021arXiv

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_2$ O $_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$

This paper presents vertical (001) oriented $β$ -Ga $_2$ O $_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $μm$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (R $_{on-sp}$ ) of 0.32 m $Ω$ -cm $^{2}$ . The extreme permittivity field plate oxide facilitated the lateral spread of the electric field profile beyond the field plate edge and enabled a breakdown voltage ( $V_{br}$ ) of 687 V. The edge termination efficiency increases from 13.5 $\%$ for non-field plated structure to 63 $\%$ for high permittivity field plate structure. The surface breakdown electric field was extracted to be 5.45 MV/cm at the center of the anode region using TCAD simulations. The high permittivity field plated SBD demonstrated a record high Baliga figure of merit (BFOM) of 1.47 GW/cm $^{2}$ showing the potential of Ga $_2$ O $_3$ power devices for multi-kilovolt class applications.

preprint2021arXiv

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al $_2$ O $_3$ on $β$ -Ga $_2$ O $_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al $_2$ O $_3$ is performed in the same reactor as Ga $_2$ O $_3$ using trimethylaluminum and O $_2$ as precursors without breaking the vacuum at a growth temperature of 600 $^0$ C. The fast and slow near interface traps at the Al $_2$ O $_3$ / $β$ -Ga $_2$ O $_3$ interface are identified and quantified using stressed capacitance-voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D $_{it}$ ) are measured using ultra-violet (UV) assisted CV technique. The average D $_{it}$ for the MOSCAP is determined to be 7.8 $\times$ 10 $^{11}$ cm $^{-2}$ eV $^{-1}$ . The conduction band offset of the Al $_2$ O $_3$ / Ga $_2$ O $_3$ interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al $_2$ O $_3$ / Ga $_2$ O $_3$ interface. The current-voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV/cm. This in-situ Al $_2$ O $_3$ dielectric on $β$ -Ga $_2$ O $_3$ with improved dielectric properties can enable Ga $_2$ O $_3$ -based high performance devices.

preprint2020arXiv

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the range of 2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm to 3.5 nm is measured. We also demonstrate a high density (6.4e12 cm-2) degenerate two-dimensional electron gas using a delta-doped \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure.The total charge could also include a contribution from a parallel channel in the \b{eta}-(Al0.26Ga0.74)2O3 alloy barrier.

preprint2020arXiv

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 kΩ/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3.

preprint2020arXiv

Highly tunable polarization-engineered two-dimensional electron gas in $ε$ -AlGaO3 / $ε$ -Ga2O3 heterostructures

We report on the modeling of polarization-induced two-dimensional electron gas (2DEG) formation at $ε$ -AlGaO3 / $ε$ -Ga2O3 heterointerface and the effect of spontaneous polarization (Psp) reversal on 2DEG density in $ε$ -Ga2O3 / $ε$ -AlGaO3 / $ε$ -Ga2O3 double heterostructures. Density-functional theory (DFT) is utilized to calculate the material properties of $ε$ -Ga2O3 and $ε$ -AlGaO3 alloys. Using Schrodinger-Poisson solver along with DFT calculated parameters, the 2DEG density is calculated as a function of barrier type and thickness. By optimizing the layer thicknesses of $ε$ -Ga2O3/ $ε$ -AlGaO3/ $ε$ -Ga2O3 heterostructures, charge contrast ratios exceeding 1600 are obtained. This computational study indicates the high potential for $ε$ -Ga2O3-based heterostructure devices for non-volatile memories and neuromorphic applications.

preprint2020arXiv

Schottky Barrier Height Engineering In $β$ -Ga $_2$ O $_3$ Using SiO $_2$ Interlayer Dielectric

This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$ -Ga $_2$ O $_3$ by insertion of an ultra-thin SiO $_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS) Schottky barrier diodes were fabricated on bulk n-type doped $β$ -Ga $_2$ O $_3$ single crystal substrates along the (010), (-201) and (100) orientations and were characterized by room temperature current-voltage (I-V) and capacitance-voltage (C-V) measurements. Pt MIS diodes exhibited 0.53 eV and 0.37 eV increment in SBH along the (010) and (-201) orientations respectively as compared to their respective MS counterparts. The highest SBH of 1.81 eV was achieved on the (010)-oriented MIS SBD using Pt metal. The MIS SBDs on (100)-oriented substrates exhibited a dramatic increment ( $>$ 1.5 $\times$ ) in SBH as well as reduction in reverse leakage current. The use of thin dielectric interlayers can be an efficient experimental method to modulate SBH of metal/Ga $_2$ O $_3$ junctions.

preprint2019arXiv

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x1018-7.3x1019 cm-3 with a corresponding electron mobility of 53-27 cm2/V.s in uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 layers. Modulation doping is used to realize a total electron sheet charge of 2.3x1012 cm-2 in a \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure using a uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 barrier layer and a thin spacer layer.

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Praneeth Ranga

Research overview

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8 publications

4.4 kV $β$ -Ga $_2$ O $_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^2$

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_2$ O $_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Highly tunable polarization-engineered two-dimensional electron gas in $ε$ -AlGaO3 / $ε$ -Ga2O3 heterostructures

Schottky Barrier Height Engineering In $β$ -Ga $_2$ O $_3$ Using SiO $_2$ Interlayer Dielectric

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

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Praneeth Ranga

Research overview

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8 publications

4.4 kV βββ-Ga2_22​O3_33​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2^22

High Permittivity Dielectric Field-Plated Vertical (001) βββ-Ga2_22​O3_33​ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of >>> 1 GW/cm2^{2}2

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Highly tunable polarization-engineered two-dimensional electron gas in εεε-AlGaO3 / εεε-Ga2O3 heterostructures

Schottky Barrier Height Engineering In βββ-Ga2_22​O3_33​ Using SiO2_22​ Interlayer Dielectric

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

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Building this map preview

4.4 kV $β$ -Ga $_2$ O $_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^2$

High Permittivity Dielectric Field-Plated Vertical (001) $β$ -Ga $_2$ O $_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm $^{2}$

Highly tunable polarization-engineered two-dimensional electron gas in $ε$ -AlGaO3 / $ε$ -Ga2O3 heterostructures

Schottky Barrier Height Engineering In $β$ -Ga $_2$ O $_3$ Using SiO $_2$ Interlayer Dielectric