Researcher profile

Sina Najmaei

Sina Najmaei contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

XBTorch: A Unified Framework for Modeling and Co-Design of Crossbar-Based Deep Learning Accelerators

Emerging memory technologies have gained significant attention as a promising pathway to overcome the limitations of conventional computing architectures in deep learning applications. By enabling computation directly within memory, these technologies - built on nanoscale devices with tunable and nonvolatile conductance - offer the potential to drastically reduce energy consumption and latency compared to traditional von Neumann systems. This paper introduces XBTorch (short for CrossBarTorch), a novel simulation framework that integrates seamlessly with PyTorch and provides specialized tools for accurately and efficiently modeling crossbar-based systems based on emerging memory technologies. Through detailed comparisons and case studies involving hardware-aware training and inference, we demonstrate how XBTorch offers a unified interface for key research areas such as device-level modeling, cross-layer co-design, and inference-time fault tolerance. While exemplar studies utilize ferroelectric field-effect transistor (FeFET) models, the framework remains technology-agnostic - supporting other emerging memories such as resistive RAM (ReRAM), as well as enabling user-defined custom device models. The code is publicly available at: https://github.com/ADAM-Lab-GW/xbtorch

preprint2011arXiv

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Monolayer Molybdenum disulfide (MoS2), a two-dimensional crystal with a direct bandgap, is a promising candidate for 2D nanoelectronic devices complementing graphene. There have been recent attempts to produce MoS2 layers via chemical and mechanical exfoliation of bulk material. Here we demonstrate the large area growth of MoS2 atomic layers on SiO2 substrates by a scalable chemical vapor deposition (CVD) method. The as-prepared samples can either be readily utilized for further device fabrication or be easily released from SiO2 and transferred to arbitrary substrates. High resolution transmission electron microscopy and Raman spectroscopy on the as grown films of MoS2 indicate that the number of layers range from single layer to a few layers. Our results on the direct growth of MoS2 layers on dielectric leading to facile device fabrication possibilities show the expanding set of useful 2D atomic layers, on the heels of graphene, which can be controllably synthesized and manipulated for many applications.