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Pulickel M. Ajayan

Pulickel M. Ajayan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.opticsphysics.atom-phphysics.comp-ph

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Published work

23 published item(s)

preprint2022arXiv

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces

Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond surfaces to study electronic properties, which is far from the experimentally observed hydrogen coverage. In this work, we have carried out a detailed study using fully atomistic reactive molecular dynamics (MD) simulations on low indices diamond surfaces i.e. (001), (013), (110), (113) and (111) to evaluate the quality and hydrogenation thresholds on different diamond surfaces and their possible effects on electronic properties. Our simulation results indicate that the 100% surface hydrogenation in these surfaces is hard to achieve because of the steric repulsion between the terminated hydrogen atoms. Among all the considered surfaces, the (001), (110), and (113) surfaces incorporate a larger number of hydrogen atoms and passivate the surface dangling bonds. Our results on hydrogen stability also suggest that these surfaces with optimum hydrogen coverage are robust under extreme conditions and could provide homogeneous p-type surface conductivity in the diamond surfaces, a key requirement for high-field, high-frequency device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Generation of Intense Phase-Stable Femtosecond Hard X-ray Pulse Pairs

Coherent nonlinear spectroscopies and imaging in the X-ray domain provide direct insight into the coupled motions of electrons and nuclei with resolution on the electronic length and time scale. The experimental realization of such techniques will strongly benefit from access to intense, coherent pairs of femtosecond X-ray pulses. We have observed phase-stable X-ray pulse pairs containing more thank 3 x 10e7 photons at 5.9 keV (2.1 Angstrom) with about 1 fs duration and 2-5 fs separation. The highly directional pulse pairs are manifested by interference fringes in the superfluorescent and seeded stimulated manganese K-alpha emission induced by an X-ray free-electron laser. The fringes constitute the time-frequency X-ray analogue of the Young double-slit interference allowing for frequency-domain X-ray measurements with attosecond time resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Processing Dynamics of 3D-Printed Carbon Nanotubes-Epoxy Composites

Carbon Nanotubes (CNTs)-polymer composites are promising candidates for a myriad of applications. Ad-hoc CNTs-polymer composite fabrication techniques inherently pose roadblock to optimized processing resulting in microstructural defects i.e., void formation, poor interfacial adhesion, wettability, and agglomeration of CNTs inside the polymer matrix. Although improvement in the microstructures can be achieved via additional processing steps such as-mechanical methods and/or chemical functionalization, the resulting composites are somewhat limited in structural and functional performances. Here, we demonstrate that 3D printing technique like-direct ink writing offers improved processing of CNTs-polymer composites. The shear-induced flow of an engineered nanocomposite ink through the micronozzle offers some benefits including reducing the number of voids within the epoxy, improving CNTs dispersion and adhesion with epoxy, and partially aligns the CNTs. Such microstructural changes result in superior mechanical performance and heat transfer in the composites compared to their mold-casted counterparts. This work demonstrates the advantages of 3D printing over traditional fabrication methods, beyond the ability to rapidly fabricate complex architectures, to achieve improved processing dynamics for fabricating CNT-polymer nanocomposites with better structural and functional properties.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Corrosion Resistance of Sulfur-Selenium Alloy Coatings

Despite decades of research, metallic corrosion remains a long-standing challenge in many engineering applications. Specifically, designing a material that can resist corrosion both in abiotic as well as biotic environments remains elusive. Here we design a lightweight sulfur-selenium (S-Se) alloy with high stiffness and ductility that can serve as a universal corrosion-resistant coating with protection efficiency of ~99.9% for steel in a wide range of diverse environments. S-Se coated mild steel shows a corrosion rate that is 6-7 orders of magnitude lower than bare metal in abiotic (simulated seawater and sodium sulfate solution) and biotic (sulfate-reducing bacterial medium) environments. The coating is strongly adhesive and mechanically robust. We attribute the high corrosion resistance of the alloy in diverse environments to its semi-crystalline, non-porous, anti-microbial, and viscoelastic nature with superior mechanical performance, enabling it to successfully block a variety of diffusing species.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

U-carbon: metallic and magnetic

We report the discovery of a pristine crystalline 3D carbon that is magnetic, electrically conductive and stable under ambient conditions. This carbon material, which has remained elusive for decades, is synthesized by using the chemical vapor deposition (CVD) technique with a particular organic molecular precursor 3,3-dimethyl-1-butene (C6H12). An exhaustive computational search of the potential energy surface reveals its unique sp2-sp3 hybrid bonding topology. Synergistic studies involving a large number of experimental techniques and multi-scale first-principles calculations reveal the origin of its novel properties due to the special arrangement of sp2 carbon atoms in lattice. The discovery of this U-carbon, named such because of its unusual structure and properties, can open a new chapter in carbon science.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Zeolite-inspired 3d printed structures with enhanced mechanical properties

Specific strength (strength/density) is a crucial factor while designing high load bearing architecture in areas of aerospace and defence. Strength of the material can be enhanced by blending with high strength component or, by compositing with high strength fillers but both the options has limitations such as at certain load, materials fail due to poor filler and matrix interactions. Therefore, researchers are interested in enhancing strength of materials by playing with topology/geometry and therefore nature is best option to mimic for structures whereas, complexity limits nature mimicked structures. In this paper, we have explored Zeolite-inspired structures for load bearing capacity. Zeolite-inspired structure were obtained from molecular dynamics simulation and then fabricated via Fused deposition Modeling. The atomic scale complex topology from simulation is experimentally synthesized using 3D printing. Compressibility of as-fabricated structures was tested in different direction and compared with simulation results. Such complex architecture can be used for ultralight aerospace and automotive parts.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Nonlinear dark-field imaging of 1D defects in monolayer dichalcogenides

Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D defects in 2D materials is lacking. Scanning transmission electron microscopy (STEM), Raman, photoluminescence and nonlinear optical spectroscopies, are all extremely valuable, but current implementations suffer from low throughput and a destructive nature (STEM) or limitations in their unambiguous sensitivity at the nanoscale. Here we demonstrate that dark-field second harmonic generation (SHG) microscopy can rapidly, efficiently, and non-destructively probe grain boundaries and edges in monolayer dichalcogenides (i.e. MoSe2, MoS2 and WS2). Dark-field SHG efficiently separates the spatial components of the emitted light and exploits interference effects from crystal domains of different orientations to localize grain boundaries and edges as very bright 1D patterns through a Cerenkov-type SHG emission. The frequency dependence of this emission in MoSe2 monolayers is explained in terms of plasmon-enhanced SHG related to the defects metallic character. This new technique for nanometer-scale imaging of the grain structure, domain orientation and localized 1D plasmons in 2D different semiconductors, thus enables more rapid progress towards both applications and fundamental materials discoveries.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Active control of surface plasmon resonance in MoS2-Ag hybrid nanostructures

Molybdenum disulfide (MoS2) monolayers have attracted much attention for their novel optical properties and efficient light-matter interactions. When excited by incident laser, the optical response of MoS2 monolayers was effectively modified by elementary photo-excited excitons owing to their large exciton binding energy, which can be facilitated for the optical-controllable exciton-plasmon interactions. Inspired by this concept, we experimentally investigated active light control of surface plasmon resonance (SPR) in MoS2-Ag hybrid nanostructures. The white light spectra of SPR were gradually red-shifted by increasing laser power, which was distinctly different from the one of bare Ag nanostructure. This spectroscopic tunability can be further controlled by near-field coupling strength and polarization state of light, and selectively applied to the control of plasmonic dark mode. An analytical Lorentz model for photo-excited excitons induced modulation of MoS2 dielectric function was developed to explain the insight physics of this SPR tunability. Our study opens new possibilities to the development of all-optical controlled nanophotonic devices based on 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Square selenene and tellurene: novel group VI elemental 2D semi-Dirac materials and topological insulators

With first principles calculations, we predict a novel stable 2D layered structure for group VI elements Se and Te that we call square selenene and square tellurene, respectively. They have chair-like buckled structures similar to other layered materials such as silicene and germanene but with a square unit cell rather than hexagonal. This special structure gives rise to anisotropic band dispersions near the Fermi level that can be described by a generalized semi-Dirac Hamiltonian. We show that the considerably large band gap ($\sim$0.1 eV) opened by spin-orbit coupling makes square selenene and tellurene topological insulators, hosting non-trivial edge states. Therefore, square selenene and tellurene are promising materials for novel electronic and spintronic applications. Finally, we show that this new type of 2D elemental material can potentially be grown on proper substrates, such as a Au(100) surface.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Valley Trion Dynamics in Monolayer MoSe$_2$

Charged excitons called trions play an important role in the fundamental valley dynamics in the newly emerging 2D semiconductor materials. We used ultrafast pump- probe spectroscopy to study the valley trion dynamics in a MoSe$_2$ monolayer grown by using chemical vapor deposition. The dynamics display an ultrafast trion formation followed by a non-exponential decay. The measurements at different pump fluences show that the trion decay dynamics become slower as the excitation density increases. The observed trion dynamics and the associated density dependence are a result of the trapping by two defect states as being the dominating decay mechanism. The simulation based on a set of rate equations reproduces the experimental data for different pump fluences. Our results reveal the important trion dynamics and identify the trapping by defect states as the primary trion decay mechanism in monolayer MoSe$_2$ under the excitation densities used in our experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode

Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm2/Vs, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependence direct bandgap. However, p-n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p-n heterojunction. Upon illumination, these ultra-thin p-n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm, and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p-n diodes show promise for broadband photodetection and solar energy harvesting.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spatially Resolved Photo-Excited Charge Carrier Dynamics in Phase-Engineered Monolayer MoS2

A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photo-excitation using correlated scanning photocurrent microscopy and photoluminescence imaging. We examined the effect of local phase transformation underneath the metal electrodes on the generation of photocurrent across the channel length with diffraction-limited spatial resolution. While maximum photocurrent generation occurs at the Schottky contacts of semiconducting (2H-phase) MoS2, after the metallic phase transformation (1T-phase), the photocurrent peak is observed towards the center of the device channel, suggesting a strong reduction of native Schottky barriers. Analysis using the bias and position dependence of the photocurrent indicates that the Schottky barrier heights are few meV for 1T- and ~200 meV for 2H-contacted devices. We also demonstrate that a reduction of native Schottky barriers in a 1T device enhances the photo responsivity by more than one order of magnitude, a crucial parameter in achieving high performance optoelectronic devices. The obtained results pave a pathway for the fundamental understanding of intrinsic optoelectronic properties of atomically thin TMDs where Ohmic contacts are necessary for achieving high efficiency devices with low power consumption.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Blue shifting of the A exciton peak in folded monolayer 1H-MoS2

The large family of layered transition-metal dichalcogenides is widely believed to constitute a second family of two-dimensional (2D) semiconducting materials that can be used to create novel devices that complement those based on graphene. In many cases these materials have shown a transition from an indirect bandgap in the bulk to a direct bandgap in monolayer systems. In this work we experimentally show that folding a 1H molybdenum disulphide (MoS2) layer results in a turbostratic stack with enhanced photoluminescence quantum yield and a significant shift to the blue by 90 meV. This is in contrast to the expected 2H-MoS2 band structure characteristics, which include an indirect gap and quenched photoluminescence. We present a theoretical explanation to the origin of this behavior in terms of exciton screening.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Giant Quasiparticle Bandgap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces

In general, there are two major factors affecting bandgaps in nanostructures: (i) the enhanced electron-electron interactions due to confinement and (ii) the modified self-energy of electrons due to the dielectric screening. While recent theoretical studies on graphene nanoribbons (GNRs) report on the first effect, the effect of dielectric screening from the surrounding materials such as substrates has not been thoroughly investigated. Using large-scale electronic structure calculations based on the GW approach, we show that when GNRs are deposited on substrates, bandgaps get strongly suppressed (by as much as 1 eV) even though the GNR-substrate interaction is weak.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Second harmonic microscopy of monolayer MoS2

We show that the lack of inversion symmetry in monolayer MoS2 allows strong optical second harmonic generation. Second harmonic of an 810-nm pulse is generated in a mechanically exfoliated monolayer, with a nonlinear susceptibility on the order of 1E-7 m/V. The susceptibility reduces by a factor of seven in trilayers, and by about two orders of magnitude in even layers. A proof-of-principle second harmonic microscopy measurement is performed on samples grown by chemical vapor deposition, which illustrates potential applications of this effect in fast and non-invasive detection of crystalline orientation, thickness uniformity, layer stacking, and single-crystal domain size of atomically thin films of MoS2 and similar materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transistors. Over 100 devices are studied to obtain a statistical description of device performance in CVD MoS2. We examine and scale down the channel length of the transistors to 100 nm and achieve record high drain current of 62.5 mA/mm in CVD monolayer MoS2 film ever reported. We further extract the intrinsic contact resistance of low work function metal Ti on monolayer CVD MoS2 with an expectation value of 175 Ω.mm, which can be significantly decreased to 10 Ω.mm by appropriate gating. Finally, field-effect mobilities (μFE) of the carriers at various channel lengths are obtained. By taking the impact of contact resistance into account, an average and maximum intrinsic μFE is estimated to be 13.0 and 21.6 cm2/Vs in monolayer CVD MoS2 films, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length is ~0.63 μm in the on-state for metal (Ti) contacted single-layer MoS2. These results reveal that MoS2 transistors are Schottky barrier transistors, where the on/off states are switched by the tuning the Schottky barriers at contacts. The effective barrier heights for source and drain barriers are primarily controlled by gate and drain biases, respectively. We discuss the drain induced barrier narrowing effect for short channel devices, which may reduce the influence of large contact resistance for MoS2 Schottky barrier transistors at the channel length scaling limit.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temperature-dependent Phonon Shifts in Monolayer MoS2

We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E2g and A1g modes in the monolayer. While both peaks show an expected red-shift with increasing temperature, the frequency shift is larger for the A1g more than for the E2g mode. This is in contrast to previously reported bulk behavior, in which the E2g mode shows a larger frequency shift with temperature. The temperature dependence of these phonon shifts is attributed to the anharmonic contributions to the ionic interaction potential in the two-dimensional system.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Catalytic sub-surface etching of nanoscale channels in graphite

Catalytic hydrogenation of graphite has recently attracted renewed attention, as a route for nano-patterning of graphene and to produce graphene nano-ribbons. These reports show that metallic nanoparticles etch surface layers of graphite, or graphene anisotropically along the crystallographic zigzag <11-20> or armchair <1010> directions. On graphene the etching direction can be influenced by external magnetic fields or the substrate. Here we report the sub-surface etching of highly oriented pyrolytic graphite (HOPG) by Ni nanoparticles, to form a network of tunnels, as seen by SEM and STM. In this new nanoporous form of graphite, the top layers bend inward on top of the tunnels, while their local density of states remains fundamentally unchanged. Engineered nanoporous tunnel networks in graphite allow further chemical modification and may find applications in storage or sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Anomalous insulator metal transition in boron nitride-graphene hybrid atomic layers

The study of two-dimensional (2D) electronic systems is of great fundamental significance in physics. Atomic layers containing hybridized domains of graphene and hexagonal boron nitride (h-BNC) constitute a new kind of disordered 2D electronic system. Magneto-electric transport measurements performed at low temperature in vapor phase synthesized h-BNC atomic layers show a clear and anomalous transition from an insulating to a metallic behavior upon cooling. The observed insulator to metal transition can be modulated by electron and hole doping and by the application of an external magnetic field. These results supported by ab-initio calculations suggest that this transition in h-BNC has distinctly different characteristics when compared to other 2D electron systems and is the result of the coexistence between two distinct mechanisms, namely, percolation through metallic graphene networks and hopping conduction between edge states on randomly distributed insulating h-BN domains.

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preprint2011arXiv

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Monolayer Molybdenum disulfide (MoS2), a two-dimensional crystal with a direct bandgap, is a promising candidate for 2D nanoelectronic devices complementing graphene. There have been recent attempts to produce MoS2 layers via chemical and mechanical exfoliation of bulk material. Here we demonstrate the large area growth of MoS2 atomic layers on SiO2 substrates by a scalable chemical vapor deposition (CVD) method. The as-prepared samples can either be readily utilized for further device fabrication or be easily released from SiO2 and transferred to arbitrary substrates. High resolution transmission electron microscopy and Raman spectroscopy on the as grown films of MoS2 indicate that the number of layers range from single layer to a few layers. Our results on the direct growth of MoS2 layers on dielectric leading to facile device fabrication possibilities show the expanding set of useful 2D atomic layers, on the heels of graphene, which can be controllably synthesized and manipulated for many applications.

0 citations0 reviewsNo code linkedOpen access