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Shubhankar Das

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6 publications

preprint2021arXiv

Damping in yttrium iron garnet film with an interface

We report strong damping enhancement in a 200 nm thick yttrium iron garnet (YIG) film due to spin inhomogeneity at the interface. The growth-induced thin interfacial gadolinium iron garnet (GdIG) layer antiferromagnetically (AFM) exchange couples with the rest of the YIG layer. The out-of-plane angular variation of ferromagnetic resonance (FMR) linewidth ΔHΔH reflects a large inhomogeneous distribution of effective magnetization Δ4πMeffΔ4 πM_{eff} due to the presence of an exchange springlike moments arrangement in YIG. We probe the spin inhomogeneity at the YIG-GdIG interface by performing an in-plane angular variation of resonance field HrH_{r}, leading to a unidirectional feature. The large extrinsic Δ4πMeffΔ4πM_{eff} contribution, apart from the inherent intrinsic Gilbert contribution, manifests enhanced precessional damping in YIG film.

preprint2020arXiv

A four-state magnetic tunnel junction switchable with spin-orbit torques

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent states of the TCE structure. Flowing current in an underlying Ta layer generates in the adjacent TCE structure spin-orbit torques which induce field-free switching of the four-state MTJ between all its resistance states. The demonstrated four-state MTJ is an important step towards fabricating multi-level MTJs with numerous resistance states which could be important in various spintronics applications, such as multi-level magnetic random access or neuromorphic memory.

preprint2020arXiv

Stabilization of exponential number of discrete remanent states with localized spin-orbit torques

Using bilayer films of ββ-Ta/Ni0.8_{0.8}Fe0.2_{0.2}, we fabricate structures consisting of two, three and four crossing ellipses which exhibit shape-induced bi-axial, tri-axial and quadro-axial magnetic anisotropy in the crossing area, respectively. Structures consisting of N crossing ellipses can be stabilized in 2N remanent states by applying (and removing) an external magnetic field. However, we show that with field-free spin-orbit torques induced by flowing currents in individual ellipses, the number of remanent states grows to 2N^\text{N}. Furthermore, when the current flows between the edges of different ellipses the number of remanent states jumps to 22N^\text{2N}, including states which exhibit a ππ-Néel domain wall in the overlap area. The very large number of accessible remanent magnetic states that are exhibited by the relatively simple magnetic structures paves the way for intriguing spintronics applications including memory devices.

preprint2016arXiv

Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO3_3/SrTiO3_3 interfaces on δδ-doping

We present a study of modulation of spin-orbit interaction (SOI) at the interface of LaTiO3_3/SrTiO3_3 by δδ-doping with an iso-structural ferromagnetic perovskite LaCoO3_3. The sheet carrier density at the interface decreases exponentially with δδ-doping thickness. We have explored that the spin-orbit scattering time (τsoτ_{so}) can be decreased by nearly 3 orders of magnitude, whereas the inelastic scattering time (τiτ_{i}) remains almost constant with δδ-doping thickness. We have also observed that the τiτ_{i} varies almost inversely proportional to temperature and τsoτ_{so} remains insensitive to temperature, which suggest that the spin relaxation in these interfaces follows D'yakonov-Perel mechanism. The observed in-plane anisotropic magnetoresistance is attributed to the mixing of the spin up and spin down states of d-band at Fermi level due to SOI.

preprint2014arXiv

Enhanced spin-orbit interaction and Kondo scattering in δδ-doped LaTiO3_3/SrTiO3_3 interfaces

We present a study of delta (δδ) doping at LaTiO3_3/SrTiO3_3 (LTO/STO) interface with iso-structural antiferromagnetic perovskite LaCrO3_3 (LCO) that dramatically alters the properties of the two dimensional electron gas (2-DEG) at the interface. The effects include a reduction in sheet-carrier density, prominence of the low temperature resistivity minimum, enhancement of weak antilocalization below 10 K and observation of a strong anisotropic magnetoresistance (MR). The positive and negative MR for out-of-plane and in-plane field respectively and the field and temperature dependencies of MR suggest Kondo scattering by localized Ti3+^{3+} moments renormalized by spin-orbit interaction at T << 10 K, with the increased δδ-layer thickness. Electron energy loss spectroscopy and density functional calculations provide convincing evidence for blocking of electron transfer from LTO to STO by the δδ-layer.

preprint2014arXiv

Magnetothermopower of δδ-doped LaTiO3_3/SrTiO3_3 interfaces in the Kondo regime

Measurements of magneto-thermopower (S(H, T)) of interfacial delta doped LaTiO3_3/SrTiO3_3 (LTO/STO) heterostructure by an iso-structural antiferromagnetic perovskite LaCrO3_3 are reported. The thermoelectric power of the pure LTO/STO interface at 300 K is ≈\approx 118 μμV/K, but increases dramatically on δδ-doping. The observed linear temperature dependence of S(T) over the temperature range 100 K to 300 K is in agreement with the theory of diffusion thermopower of a two-dimensional electron gas. The S(T) displays a distinct enhancement in the temperature range (T << 100 K) where the sheet resistance shows a Kondo-type minimum. We attributed this maximum in S(T) to Kondo scattering of conduction electron by localized impurity spins at the interface. The suppression of S by a magnetic field, and the isotropic nature of the suppression in out-of-plane and in-plane field geometries further strengthen the Kondo model based interpretation of S(H, T).

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