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Ariel Zaig

Ariel Zaig appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

2 published item(s)

preprint2020arXiv

A four-state magnetic tunnel junction switchable with spin-orbit torques

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent states of the TCE structure. Flowing current in an underlying Ta layer generates in the adjacent TCE structure spin-orbit torques which induce field-free switching of the four-state MTJ between all its resistance states. The demonstrated four-state MTJ is an important step towards fabricating multi-level MTJs with numerous resistance states which could be important in various spintronics applications, such as multi-level magnetic random access or neuromorphic memory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stabilization of exponential number of discrete remanent states with localized spin-orbit torques

Using bilayer films of $β$-Ta/Ni$_{0.8}$Fe$_{0.2}$, we fabricate structures consisting of two, three and four crossing ellipses which exhibit shape-induced bi-axial, tri-axial and quadro-axial magnetic anisotropy in the crossing area, respectively. Structures consisting of N crossing ellipses can be stabilized in 2N remanent states by applying (and removing) an external magnetic field. However, we show that with field-free spin-orbit torques induced by flowing currents in individual ellipses, the number of remanent states grows to 2$^\text{N}$. Furthermore, when the current flows between the edges of different ellipses the number of remanent states jumps to 2$^\text{2N}$, including states which exhibit a $π$-Néel domain wall in the overlap area. The very large number of accessible remanent magnetic states that are exhibited by the relatively simple magnetic structures paves the way for intriguing spintronics applications including memory devices.

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