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R. C. Budhani

R. C. Budhani appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.mes-hallcond-mat.stat-mech

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Published work

34 published item(s)

preprint2019arXiv

Protected superconductivity at the boundaries of charge-density-wave domains

Solid 4He may acquire superfluid characteristics due to the frustration of the solid phase at grain boundaries. Here, we show that an analogous effect occurs in systems with competition among charge-density-waves (CDWs) and superconductivity in the presence of disorder, as cuprate or dichalcogenide superconductors. The CDWs breaks apart in domains with topologically protected filamentary superconductivity (FSC) at the interfaces. Transport experiments carried out in underdoped cuprates with the magnetic field acting as a control parameter are shown to be in excellent agreement with the theoretical expectation. At high temperature and low fields we find a transition from CDWs to fluctuating superconductivity, weakly affected by disorder, while at high field and low temperature the protected filamentary superconducting phase appears in close analogy with "glassy" supersolid phenomena in 4He.

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preprint2016arXiv

Crossover from magnetostatic to exchange coupling in La0.67Ca0.33MnO3/YBa2Cu3O7/La0.67Ca0.33MnO3 heterostructures

The influence of YBa2Cu3O4 (YBCO) superconductor layer (S-layer) with varying thickness d-YBCO = 20 to 50 nm on the magnetic coupling between two La0.67Ca0.33MnO3 (LCMO) ferromagnet layers (F-layer, thickness d-LCMO = 50 nm) in F/S/F heterostructures (HSs) was investigated by measuring global magnetization (M) in a temperature (T) range = 2 - 300 K and magnetic field (H) range = 0 - 10 kOe. All the HSs were superconducting with critical temperature (Tc) decreasing from = 78 to 36 K with decrease in d-YBCO, whereas the ferromagnetic ordering temperature Tm = 250 K did not change much. Systematically measured M-H loops of all HSs at both T > Tc and T < Tc show three main results- (a) the two step magnetic reversal above Tc converts into a four step reversal below Tc in HSs with d-YBCO >= 30 nm, (b) the magnetic field corresponding to the additional two switching steps and their magnitude show characteristic evolution with T and d-YBCO and (c) the HS with d-YBCO = 20 nm shows radically different behaviour, where the two step magnetic reversal above Tc continues to persist below Tc and converts into a single step reversal at T << Tc. The first two results indicate magnetostatic coupling between the magnetic domains and the vortices across the two F/S interfaces resulting in reversal dynamics different from that deep within the LCMO layers. Whereas, the result c reveals indirect exchange coupling between LCMO layers through the superconducting YBCO layer, which is a clear experimental evidence of coexistence of ferromagnetism and superconductivity in nm scale F/S/F HSs expected theoretically by C.A.R. Sa de Melo (Physica C 387, 17-25 (2003)).

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preprint2016arXiv

Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO$_3$/SrTiO$_3$ interfaces on $δ$-doping

We present a study of modulation of spin-orbit interaction (SOI) at the interface of LaTiO$_3$/SrTiO$_3$ by $δ$-doping with an iso-structural ferromagnetic perovskite LaCoO$_3$. The sheet carrier density at the interface decreases exponentially with $δ$-doping thickness. We have explored that the spin-orbit scattering time ($τ_{so}$) can be decreased by nearly 3 orders of magnitude, whereas the inelastic scattering time ($τ_{i}$) remains almost constant with $δ$-doping thickness. We have also observed that the $τ_{i}$ varies almost inversely proportional to temperature and $τ_{so}$ remains insensitive to temperature, which suggest that the spin relaxation in these interfaces follows D'yakonov-Perel mechanism. The observed in-plane anisotropic magnetoresistance is attributed to the mixing of the spin up and spin down states of d-band at Fermi level due to SOI.

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preprint2015arXiv

Defect-induced photoluminescence of strontium titanate and its modulation by electrostatic gating

The photoluminescence (PL) spectra of Ar-ion irradiated single crystals of SrTiO3 (STO) excited by the 325 nm line of a He-Cd laser are compared with those of pristine crystals, epitaxial films, and amorphous layers of STO at several temperatures down to 20 K. The 550 eV Ar-beam irradiation activates three distinctly visible PL peaks: blue (~430 nm), green (~550 nm), and infrared (~820 nm) at room temperature, making the photoluminescence multicolored. The abrupt changes in PL properties below ~100 K are discussed in relation with the antiferrodistortive structural phase transition in SrTiO3 from cubic to tetragonal symmetry, which makes it a direct bandgap semiconductor. The photoluminescence spectra are also tuned by an electrostatic gate field in a field-effect transistor geometry. At 20 K, we observed a maximum increase of ~20% in PL intensity under back gating of SrTiO3.

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preprint2015arXiv

Density driven fluctuations in a two-dimensional superconductor

In the vicinity of a phase transition, the order parameter starts fluctuating before vanishing at the critical point. The fluctuation regime, i.e. the way the ordered phase disappears, is a characteristics of a transition, and determines the universality class it belongs to. This is valid for thermal transitions, but also for zero temperature Quantum Phase Transitions (QPT). In the case of superconductivity, the order parameter has an amplitude and a phase, which can both fluctuate according to well identified scenarios. The Ginzburg-Landau theory and its extensions describe the fluctuating regime of regular metallic superconductors, and the associated dynamics of the pair amplitude and the phase. When the system is two-dimensional and/or very disordered, phase fluctuations dominate. Here, we address the possibility that a new type of fluctuations occurs in superconductors with an anomalous dynamics. In particular we show that the superconducting to metal QPT that occurs upon changing the gate voltage in two-dimensional electron gases at LAO/STO and LTO/STO interfaces displays anomalous scaling properties, which can be explained by density driven superconducting critical fluctuations. A Finite Size Scaling (FSS) analysis reveals that the product z.nu (nu is the correlation length exponent and z the dynamical critical one) is z.nu = 3/2. We argue that critical superconducting fluctuations acquire an anomalous dynamics with z=3, since they couple to density ones in the vicinity of a spontaneous electronic phase separation, and that nu=1/2 corresponds to the mean-field value. This approach strongly departs from the conventional z=1 scenario in disordered 2D systems based on long-range Coulomb interactions with dominant phase fluctuations. This scenario can explain recent data in LSCO ultra-thin films, and apply to a whole class of two-dimensional superconductors.

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preprint2015arXiv

Dynamics of photo-generated non-equilibrium electronic states in Ar$^+$ ion irradiated SrTiO$_3$

A metallic surface is realized on stoichiometric and insulating (100) SrTiO$_3$ by Ar$^+$ - ion irradiation. The sheet carrier density and Hall mobility of the layer are $\sim$$4.0$ $\times$ $10^{14}$ $/cm^2$ and $\sim$$2$ $\times$ $10^3$ $cm^2/Vs$ respectively at 15 K for the irradiation dose of $\sim$4.2 $\times 10^{18}$ $ions/cm^2$. These samples display ultraviolet light sensitive photoconductivity (PC) which is enhanced abruptly below the temperature ($\approx$100 K) where SrTiO$_3$ crystal undergoes an antiferrodistortive cubic-to-tetragonal ($O_h^1$ $\rightarrow$ $D_{4h}^{18}$) structural phase transition. This behaviour of PC maps well with the temperature dependence of dielectric function and electric field induced conductivity. The longevity of the PC-state also shows a distinct change below $\approx$100 K. At $T > 100$ K its decay is thermally activated with energy barrier of $\approx$36 meV, whereas at $T < 100$ K it becomes independent of temperature. We have examined the effect of electrostatic gating on the lifetime of the PC state. One non-trivial result is the ambient temperature quenching of the photo-conducting state by the negative gate field. This observation opens avenues for designing a solid state photo-electric switch. The origin and lifetime of the PC-state are understood in the light of field effect induced band bending, defect dynamics and thermal relaxation processes.

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preprint2014arXiv

Enhanced persistent photoconductivity in $δ$-doped LaAlO$_{3}$/SrTiO$_{3}$ heterostructures

We report the effect of $δ$-doping at LaAlO$_{3}$/SrTiO$_{3}$ interface with LaMnO$_{3}$ monolayers on the photoconducting (PC) state. The PC is realized by exposing the samples to broad band optical radiation of a quartz lamp and 325 and 441 nm lines of a He-Cd laser. Along with the significant modification in electrical transport which drives the pure LaAlO$_{3}$/SrTiO$_{3}$ interface from metal-to-insulator with increasing LaMnO$_{3}$ sub-monolayer thickness, we also observe an enhancement in the photo-response and relaxation time constant. Possible scenario for the PC based on defect-clusters, random potential fluctuations and large lattice relaxation models have been discussed. For pure LaAlO$_{3}$/SrTiO$_{3}$, the photoconductivity appears to originate from inter-band transitions between Ti-derived $3d$ bands which are $e_{g}$ in character and O 2p - Ti $t_{2g}$ hybridized bands. The band structure changes significantly when fractional layers of LaMnO$_{3}$ are introduced. Here the Mn $e_{g}$ bands ($\approx1.5$ eV above the Fermi energy) within the photo-conducting gap lead to a reduction in the photo-excitation energy and a gain in overall photoconductivity.

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preprint2014arXiv

Enhanced spin-orbit coupling and charge carrier density suppression in LaAl1-xCrxO3/SrTiO3 heterointerfaces

We report a gradual suppression of the two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface on substitution of chromium at the Al sites. The sheet carrier density at the interface (ns) drops monotonically from 2.2x10(14) cm-2 to 2.5x10(13) cm-2 on replacing nearly 60 percent of Al sites by Cr and the sheet resistance (Rs) exceeds the quantum limit for localization (h/2e2) in the concentrating range 40 to 60 percent of Cr.

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preprint2014arXiv

Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces

We present a study of delta ($δ$) doping at LaTiO$_3$/SrTiO$_3$ (LTO/STO) interface with iso-structural antiferromagnetic perovskite LaCrO$_3$ (LCO) that dramatically alters the properties of the two dimensional electron gas (2-DEG) at the interface. The effects include a reduction in sheet-carrier density, prominence of the low temperature resistivity minimum, enhancement of weak antilocalization below 10 K and observation of a strong anisotropic magnetoresistance (MR). The positive and negative MR for out-of-plane and in-plane field respectively and the field and temperature dependencies of MR suggest Kondo scattering by localized Ti$^{3+}$ moments renormalized by spin-orbit interaction at T $<$ 10 K, with the increased $δ$-layer thickness. Electron energy loss spectroscopy and density functional calculations provide convincing evidence for blocking of electron transfer from LTO to STO by the $δ$-layer.

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preprint2014arXiv

Magnetothermopower of $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces in the Kondo regime

Measurements of magneto-thermopower (S(H, T)) of interfacial delta doped LaTiO$_3$/SrTiO$_3$ (LTO/STO) heterostructure by an iso-structural antiferromagnetic perovskite LaCrO$_3$ are reported. The thermoelectric power of the pure LTO/STO interface at 300 K is $\approx$ 118 $μ$V/K, but increases dramatically on $δ$-doping. The observed linear temperature dependence of S(T) over the temperature range 100 K to 300 K is in agreement with the theory of diffusion thermopower of a two-dimensional electron gas. The S(T) displays a distinct enhancement in the temperature range (T $<$ 100 K) where the sheet resistance shows a Kondo-type minimum. We attributed this maximum in S(T) to Kondo scattering of conduction electron by localized impurity spins at the interface. The suppression of S by a magnetic field, and the isotropic nature of the suppression in out-of-plane and in-plane field geometries further strengthen the Kondo model based interpretation of S(H, T).

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preprint2013arXiv

Double criticality in the magnetic field-driven transition of a high-TC superconductor

Driving a two-dimensional superconductor normal by applying a high magnetic field may lead to Cooper pair localization. In this case, there should be a quantum critical point associated with specific scaling laws. Such a transition has been evidenced in a number of low critical temperature superconducting thin films and has been suggested to occur also in high temperature cuprate superconductors. Here we show experimental evidence for two distinct quantum critical regimes when applying perpendicular magnetic fields to underdoped La2-xSrxCuO4 thin films. At intermediate values of the magnetic field (18T-20T), a "ghost" QCP is observed, for which the values of the related critical exponents point towards a fermionic -as opposed to bosonic- scenario. At higher (about 37 T) magnetic field, another QCP is observed, which suggests the existence of either a 2D/3D or a clean/dirty temperature crossover.

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preprint2013arXiv

Evolution of ferromagnetic and spin-wave resonances with crystalline order in thin films of full-Heusler alloy Co2MnSi

We report the evolution of magnetic moment as well as magnetic anisotropy with crystalline order in Co$_2$MnSi thin films grown on $(100)$ MgO by pulsed laser deposition. The films become more ordered as the annealing temperature ($T_A$) increases from 400 to 600 $^0$C. The extent of \emph{L}$2_1$ ordering in the films annealed at 600 $^0$C is $\approx 96%$. The static magnetization measurements by vibrating sample magnetometry shows a maximum moment of 4.95 $μ_B$ per formula unit with low coercivity ($H_C$ $\approx$ 65 Oe) in the films annealed at 600 $^0$C. A rigorous analysis of the azimuthal and polar angle dependent ferromagnetic resonance (FMR) measured at several temperatures allows determination of various anisotropy fields relevant to our system as a function of $T_A$. Finally, we have evaluated the exchange stiffness constant down to 100 K using spin wave modes in FMR spectra. We have also estimated the exchange energies as well as stiffness constant by varying the lattice parameter \emph{ab-initio} using the Korringa-Kohn-Rostoker method.

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preprint2013arXiv

Giant coercivity enhancement and dimensional crossover of superconductivity in Co2FeSi-NbN nanoscale bilayers

Proximity coupling and magnetic switching dynamics are shown to be correlated in bilayers (B) of fully spin polarized ferromagnet (F) Co2FeSi and superconductor (S) NbN. The upper critical field derived from resistivity measurements shows a dimensional crossover with a reduced effective thickness of the S layer. At temperatures (T) << superconducting Tc, the measured M-H loops show two step switching; one at T-independent value ~ 7 Oe and other at strongly T-dependent value becoming very large ~ 1 kOe at 2 K. These results reveal induced ferromagnetism in S-layer at the S/F interface with vortex pinning influenced dynamics.

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preprint2013arXiv

Interface driven reentrant superconductivity in HoNi$_5$-NbN-HoNi$_5$ nanostructures

Superconductivity (S) and ferromagnetism (F) are probed through transport and magnetization measurements in nanometer scale HoNi$_5$-NbN (F-S) bilayers and HoNi$_5$-NbN-HoNi$_5$ (F-S-F) trilayers. The choice of materials has been made on the basis of their comparable ordering temperatures and strong magnetic anisotropy in HoNi$_5$. We observe the normal state reentrant behavior in resistance vs. temperature plots of the F-S-F structures just below the superconducting transition in the limited range of HoNi$_5$ layer thickness d$_{HN}$ (20 nm $<$ d$_{HN}$ $<$ 80 nm) when d$_{NbN}$ is fixed at $\simeq$ 10 nm. The reentrance is quenched by increasing the out-of-plane (H$_{\perp}$) magnetic field and transport current where as in-plane (H$_{\parallel}$) field of $\leq$ 1500 Oe has no effect on the reentrance. The thermally activated flux flow characteristics of the S, F-S and F-S-F layers reveal a transition from collective pinning to single vortex pinning as we place F layers on both sides of the S film. The origin of the reentrant behavior seen here in the range of 0.74 $\leq$ T$_{Curie}$/T$_C$ $\leq$ 0.92 is attribute to a delicate balance between the magnetic exchange energy and the condensation energy in the interfacial regions of the trilayer.

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preprint2013arXiv

Magnetoelastic coupling induced magnetic anisotropy in Co$_2$(Fe/Mn)Si thin films

The influence of epitaxial strain on uniaxial magnetic anisotropy of Co$_{2}$FeSi (CFS) and Co$_{2}$MnSi (CMS) Heusler alloy thin films grown on (001) SrTiO$_3$ (STO) and MgO is reported. The in-plane biaxial strain is susceptible to tune by varying the thickness of the films on STO, while on MgO the films show in-plane easy axis for magnetization (\overrightarrow{M}) irrespective of their thickness. A variational analysis of magnetic free energy functional within the Stoner-Wohlfarth coherent rotation model with out-of-plane uniaxial anisotropy for the films on STO showed the presence of magnetoelastic anisotropy with magnetostriction constant $\approx$ (12.22$\pm$0.07)$\times 10^{-6}$ and (2.02$\pm$0.06)$\times 10^{-6}$, in addition to intrinsic magnetocrystalline anisotropy $\approx$ -1.72$\times 10^{6}$ erg/cm$^{3}$ and -3.94$\times 10^{6}$ erg/cm$^{3}$ for CFS and CMS, respectively. The single-domain phase diagram reveals a gradual transition from in-plane to out-of-plane orientation of magnetization with the decreasing film thickness. A maximum canting angle of 41.5$^{\circ}$ with respect to film plane is predicted for the magnetization of the thinnest (12 nm) CFS film on STO. The distinct behaviour of \overrightarrow{M} in the films with lower thickness on STO is attributed to strain-induced tetragonal distortion.

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preprint2013arXiv

Structural ordering driven anisotropic magnetoresistance, anomalous Hall resistance and its topological overtones in full-Heusler Co2MnSi thin films

We report the evolution of crystallographic structure, magnetic ordering and electronic transport in thin films of full-Heusler alloy Co$_2$MnSi deposited on (001) MgO with annealing temperatures ($T_A$). By increasing the $T_A$ from 300$^\circ$C to 600$^\circ$C, the film goes from a disordered nanocrystalline phase to $B2$ ordered and finally to the $L2_1$ ordered alloy. The saturation magnetic moment improves with structural ordering and approaches the Slater-Pauling value of $\approx 5.0 μ_B$ per formula unit for $T_A$ = 600$^\circ$C. At this stage the films are soft magnets with coercive and saturation fields as low as $\approx$ 7 mT and 350 mT, respectively. Remarkable effects of improved structural order are also seen in longitudinal resistivity ($ρ_{xx}$) and residual resistivity ratio. A model based upon electronic transparency of grain boundaries illucidates the transition from a state of negative $dρ/dT$ to positive $dρ/dT$ with improved structural order. The Hall resistivity ($ρ_{xy}$) derives contribution from the normal scattering of charge carriers in external magnetic field, the anomalous effect originating from built-in magnetization and a small but distinct topological Hall effect in the disordered phase. The carrier concentration ($n$) and mobility ($μ$) have been extracted from the high field $ρ_{xy}$ data. The highly ordered films are characterized by $n$ and $μ$ of 1.19$\times$ 10$^{29}$ m$^{-3}$ and 0.4 cm$^2V^{-1}s^{-1}$ at room temperature. The dependence of $ρ_{xy}$ on $ρ_{xx}$ indicates the dominance of skew scattering in our films, which shows a monotonic drop on raising the $T_A$. The topological Hall effect is analyzed for the films annealed at 300$^\circ$C. ......

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preprint2013arXiv

Two-dimensional electron-gas-like charge transport at magnetic Heusler alloy-SrTiO$_3$ interface

We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and Co$_2$FeSi grown on (001) SrTiO$_3$. This unusual behavior is not observed in films deposited on other cubic oxide substrates of comparable lattice parameters. The scaling of the resistivity with thickness of the films allow extraction of interface conductance, which can be attributed to a layer of oxygen vacancies confined within 1.9 nm of the interface as revealed by atomically resolved electron microscopy and spectroscopy. The high mobility transport observed here at the interface of a fully spin polarized metal is potentially important for spintronics applications.

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preprint2013arXiv

δ-doped LaAlO3-SrTiO3 interface: Electrical transport and characterization of the interface potential

Here we investigate LaAlO_3-SrTiO_3 heterostructure withδ-doping of the interface by LaMnO_3 at less than one monolayer. This doping strongly inhibits the formation of mobile electron layer at the interface. This results in giant increase of the resistance and the thermopower of the heterostructure. Several aspects of this phenomena are investigated. A model to calculate the carrier concentration is presented and effect of doping and detailed temperature dependence is analyzed in terms of model parameters and the weak-scattering theory. The large enhancement of thermopower is attributed to the increased spin and orbital entropy originating from the LaMnO_3 mono-layer.

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preprint2012arXiv

Electronic reconstruction and enhanced superconductivity at La$_{1.6-x}$Nd$_{0.4}$Sr$_{x}$CuO$_{4}$/La$_{1.55}$Sr$_{0.45}$CuO$_{4}$ bilayer interface

We report enhanced superconductivity in bilayer thin films consisting of superconducting La$_{1.6-x}$Nd$_{0.4}$Sr$_{x}$CuO$_{4}$ with 0.06 $\leq x<$ 0.20 and metallic but non-superconducting La$_{1.55}$Sr$_{0.45}$CuO$_{4}$. These bilayers show a maximum increase in superconducting transition temperature ($T_c$) of more than 200% for $x$ = 0.06 while no change in $T_c$ is observed for the bilayers with $x\geq$ 0.20. The analysis of the critical current and kinetic inductance data suggests 2-3 unit cells thick interfacial layer electronically perturbed to have a higher $T_c$. A simple charge transfer model with cation intermixing explains the observed $T_c$ in bilayers. Still the unusually large thickness of interfacial superconducting layers can not be explained in terms of this model. We believe the stripe relaxation as well as the proximity effect also influence the superconductivity of the interface.

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preprint2012arXiv

Experimental investigation of the magnetic field driven superconductor/ insulator transition in underdoped $La_{2-x}Sr_xCuO_4$ thin films

The magnetic field driven superconductor/insulator transition is studied in a large variety of $La_{2-x}Sr_xCuO_4$ thin films of various Sr dopings. Temperature dependence of the resistivity down to 4.2 or 1.5 K under high pulsed magnetic field (up to 57 T) is analyzed. In particular, the existence of plateaus in the resistance versus temperature curves, in a limited range of temperature, for given values of the magnetic field is carefully investigated. It is shown to be associated to scaling behaviour of the resistance versus magnetic field curves, evocative of the presence of a quantum critical point. A three-dimensional (H,x,T) phase diagram is proposed, taking into account the intrinsic lamellar nature of the materials by the existence of a temperature crossover from quantum-two-dimensional to three-dimensional behavior.

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preprint2012arXiv

Interface superconductivity in La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_{4}$/La$_{1.84}$Sr$_{0.16}$CuO$_{4}$ bilayers

We identify a distinct superconducting phase at the interface of a La$_{1.48}$Nd$_{0.4}$Sr$_{0.12}$CuO$_4$ (LNSCO)/La$_{1.84}$Sr$_{0.16}$CuO$_4$ (LSCO) epitaxial bilayer system using ac screening measurements. A model based on inter-diffusion of quasiparticles and condensate at the interface yields a thickness of $\sim$ 25 nm for the interfacial layer. Two-dimensional superconductivity of the interface layer appears to be governed by Kosterlitz-Thouless-Berezinskii transition. A parallel magnetic field suppresses the superconducting transition temperature of this layer with a pair breaking parameter $α$ varying as $H^2$.

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preprint2012arXiv

Irreversibility and time relaxation in electrostatic doping of oxide interfaces

Two-dimensional electron gas (2DEG) confined in quantum wells at insulating oxide interfaces have attracted much attention as their electronic properties display a rich physics with various electronics orders such as superconductivity and magnetism. A particularly exciting features of these hetero-structures lies in the possibility to control their electronic properties by electrostatic gating, opening up new opportunities for the development of oxide based electronics. However, unexplained gating hysteresis and time relaxation of the 2DEG resistivity have been reported in some bias range, raising the question of the precise role of the gate voltage. Here we show that in LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, above a filling threshold, electrons irreversibly escape out of the well. This mechanism, which is directly responsible for the hysteresis and time relaxation, can be entirely described by a simple analytical model derived in this letter. Our results highlight the crucial role of the gate voltage both on the shape and the filling of the quantum well. They also demonstrate that it is possible to achieve a low-carrier density regime in a semiconductor limit, whereas the high-carrier density regime is intrinsically limited.

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preprint2012arXiv

Low-field microwave absorption in epitaxial La-Sr-Mn-O films resulting from the angle-tuned ferromagnetic resonance in the multidomain state

We studied magnetic-field induced microwave absorption in 100-200 nm thick La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films on SrTiO$_{3}$ substrate and found a low-field absorption with a very peculiar angular dependence: it appears only in the oblique field and is absent both in the parallel and in the perpendicular orientations. We demonstrate that this low-field absorption results from the ferromagnetic resonance in the multidomain state (domain-mode resonance). Its unusual angular dependence arises from the interplay between the parallel component of the magnetic field that drives the film into multidomain state and the perpendicular field component that controls the domain width through its effect on domain wall energy. The low-field microwave absorption in the multidomain state can be a tool to probe domain structure in magnetic films with in-plane magnetization.

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preprint2012arXiv

Multiple Quantum Phase Transitions at the superconducting LaTiO3/SrTiO3 interface

We study the magnetic field driven Quantum Phase Transition (QPT) in electrostatically gated superconducting LaTiO3/SrTiO3 interfaces. Through finite size scaling analysis, we show that it belongs to the (2+1)D XY model universality class. The system can be described as a disordered array of superconducting islands coupled by a two dimensional electron gas (2DEG). Depending on the 2DEG conductance tuned by the gate voltage, the QPT is single (corresponding to the long range phase coherence in the whole array) or double (one related to local phase coherence, the other one to the array). By retrieving the coherence length critical exponent ν, we show that the QPT can be "clean" or "dirty" according to the Harris criteria, depending on whether the phase coherence length is smaller or larger than the island size. The overall behaviour is well described by a theoretical approach of Spivak et al., in the framework of the fermionic scenario of 2D superconducting QPT.

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preprint2012arXiv

Novel photo-conducting state and its perturbation by electrostatic fields in oxide-based two-dimensional electron gas

The two-carrier transport model as proposed for the two-dimensional electron gas formed at the interfaces of oxide heterostructures is investigated by means of a combined perturbation of near ultra-violet radiation and electrostatic field, applied both separately and simultaneously. Comparison of the photo-response of the prototype systems such as the band insulator LaAlO3 and Mott insulator LaTiO3 films on TiO2 terminated SrTiO3 show remarkably similarities. Two types of non-equilibrium carriers are generated in each system, having a signature of a particular type of perturbation characterized by distinctly different relaxation process. While, the photo-conducting state diminishes in a stretched exponential manner, with a temperature dependent activation energy varying from few tens of meV to ~ 1 to 2 meV on lowering the temperature, and a relaxation time of several hours, the recovery from electrostatic gating occurs in milli-seconds time scale. An attempt is also made to explain the experimental observations using the ab-initio density functional calculations. The calculations show that the electronic transitions associated with near ultra-violet radiation emerge from bands located at ~ 2 eV above and below the Fermi energy, which are the Ti 3d states of the SrTiO3 substrate, and that from the AlO2 (TiO2) layers of the LaAlO3 (LaTiO3) films, respectively. The slow decay of the photo-current to the unperturbed state is explained in terms of the closely spaced Ti 3dxy states in the lower conduction band, which are manifested as flat bands (or localized states) in the band structure. Such localization leads to increased carrier life-times, through the energy-time relationship of the uncertainty principle.

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preprint2012arXiv

Strain induced magnetic domain evolution and spin re-orientation transition in epitaxial manganite films

The evolution of magnetic domain structure in epitaxial La$_{0.625}$Ca$_{0.375}$MnO$_3$ films on (001) NdGaO$_3$ is monitored as a function of temperature and magnetic field using Magnetic Force Microscopy. We see two distinct regions of magnetic orientational order; one in-plane displaying contrast-less image and the other tilted away from the film plane forming a distinct stripe pattern. A strong domain splitting is observed at the boundary of two regions, which is resilient to reorientation with temperature and magnetic field. We propose a model magnetic free energy functional to explain the mechanism of domain splitting seen in manganite films.

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preprint2012arXiv

Two-dimensional superconductivity induced by high-mobility carrier doping in LaTiO3/SrTiO3 hetero-structures

In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electrons spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by field effect.

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preprint2010arXiv

Heterogeneous nucleation and metal-insulator transition in epitaxial films of NdNiO$_3$

We have investigated the temperature driven first order metal-insulator (M-I) transition in thin films of NdNiO$_3$ and have compared it with the bulk behavior. The M-I transition of thin films is sensitive to epitaxial strain and a partial relaxation of epitaxial strain creates an inhomogeneous strain field in the films which broadens the M-I transition. Both the thin film and the bulk samples exhibit non equilibrium features in the transition regime which are attributed to the presence of high temperature metallic phases in their supercooled state. The degree of supercooling in the thin films is found to be much smaller than in the bulk which suggests that the metal insulator transition in the thin film occurs through heterogeneous nucleation.

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preprint2010arXiv

Vortex-Antivortex Pair Unbinding Driven by the Spin Texture of a Ferromagnet-Superconductor Bilayer

We report the observation of a pronounced dip in the in-plane field (H//) dependence of the critical current density Jc(H) and a peak in resistance R(H) of a NbN-HoNi5 bilayer at temperatures below the magnetic ordering temperature (TCurie ~ 5.5 K) of HoNi5, which is lower than the onset temperature (~ 9 K) of superconductivity in the NbN layer. The extrema in Jc(H) and R(H) appear at fields much below the upper critical field of NbN. It is suggested that the origin of this feature is linked with the non-collinear magnetization of HoNi5 whose normal component assists in depairing of Pearl vortex-antivortex pairs in the system. A spin reorientation transition driven by the H// diminishes this normal component and consequently the excess dissipation.

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preprint2009arXiv

Evidence of mobile carriers with Charge Ordering gap in Epitaxial Pr$_{0.625}$Ca$_{0.375}$MnO$_{3}$ Thin Films

Epitaxial thin films of charge-ordered Pr$_{0.625}$Ca$_{0.375}$MnO$_{3}$ have been studied using variable temperature Scanning tunneling microscopy and spectroscopy (STM/STS). The as grown films were found to be granular while the annealed films show atomic terraces at all temperatures and are found to be electronically homogeneous in 78-300K temperature range. At high temperatures (T$>$T$_{CO}\approx$ 230 K) the local tunnel spectra of the annealed films show a depression in the density of states (DOS) near Fermi energy implying a pseudogap with a significant DOS at E$_F$. The gap feature becomes more robust with cooling with a sharp jump in DOS at E$_F$ at T$_{CO}$ and with a gap value of $\sim$0.3 eV at 78K. At low temperatures we find a small but finite DOS at E$_F$ indicative of some delocalized carriers in the CO phase together with an energy gap. This is consistent with bulk transport, which shows weakening of the activation gap with cooling below 200K, and indicates the presence of two types of carriers at low temperatures.

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preprint2009arXiv

Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity

Polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ (LSMO) thin films were synthesized by pulsed laser ablation on single crystal (100) yttria-stabilized zirconia (YSZ) substrates to investigate the mechanism of magneto-transport in a granular manganite. Different degrees of granularity is achieved by using the deposition temperature (T$_{D}$) of 700 and 800 $^{0}$C. Although no significant change in magnetic order temperature (T$_C$) and saturation magnetization is seen for these two types of films, the temperature and magnetic field dependence of their resistivity ($ρ$(T, H)) is strikingly dissimilar. While the $ρ$(T,H) of the 800 $^{0}$C film is comparable to that of epitaxial samples, the lower growth temperature leads to a material which undergoes insulator-to-metal transition at a temperature (T$_{P}$ $\approx$ 170 K) much lower than T$_C$. At T $\ll$ T$_P$, the resistivity is characterized by a minimum followed by ln $\emph{T}$ divergence at still lower temperatures. The high negative magnetoresistance ($\approx$ 20$%$) and ln $\emph{T}$ dependence below the minimum are explained on the basis of Kondo-type scattering from blocked Mn-spins in the intergranular material. Further, a striking feature of the T$_D$ = 700 $^{0}$C film is its two orders of magnitude larger anisotropic magnetoresistance (AMR) as compared to the AMR of epitaxial films. We attribute it to unquenching of the orbital angular momentum of 3d electrons of Mn ions in the intergranular region where crystal field is poorly defined.

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preprint2009arXiv

Tailoring exchange bias in half-metallic La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films for spin-valve applications

We have utilized the antiferromagnetic nature and structural/chemical compatibility of La$_{0.45}$Sr$_{0.55}$MnO$_{3}$ with highly spin polarized La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ to prepare epitaxial exchange bias couples. A robust exchange bias (EB) shift of magnetization hysteresis with associated interfacial exchange energy J $\approx$ 0.13 erg/cm$^2$ at 10 K along with enhanced coercivity are reported. The EB effect was engineered to bring coercivity contrast between La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ and cobalt films in La$_{0.45}$Sr$_{0.55}$MnO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/SrTiO$_{3}$/Co magnetic tunnel junctions.

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preprint2008arXiv

Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer

The relevance of pair-breaking by exchange and dipolar fields, and by injected spins in a low carrier density cuprate Y$_{1-x}$Pr$_x$Ba$_2$Cu$_3$O$_7$ sandwiched between two ferromagnetic La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ layers is examined. At low external field ($H_{ext}$), the system shows a giant magnetoresistance(MR), which diverges deep in the superconducting state. We establish a distinct dipolar contribution to MR near the switching field(H$_c$) of the magnetic layers. At H$_{ext} \gg$ H$_c$, a large positive MR, resulting primarily from the motion of Josephson vortices and pair breaking by the in-plane field, is seen.

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preprint2008arXiv

Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films

The isothermal magnetoresistance [R($θ$)] of [001] and [110] epitaxial films of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ measured as a function of the angle $θ$ between current ($\vec{I}$) and magnetic field ($\vec{H}$), both in the plane of the film, is measured at several temperatures between 10 and 300K. The magnetic easy axis of these polytypes is intimately related to the orientation of Mn - O - Mn bonds with respect to the crystallographic axis on the plane of the substrate and energy equivalence of some of these axes. The magnetization vector ($\vec{M}$) of the [001] and [110] type films is pinned along the [110] and [001] directions respectively at low fields. A magnetization orientation phase transition (MRPT) which manifests itself as a discontinuity and hysteresis in $R(ψ)$ where $ψ$ is the angle between $\vec{H}$ and the easy axis for the $\vec{H}$ below a critical value $\vec{H}^*$ has been established. The boundary of the pinned and depinned phase on the H-T plane has been established. The highly robust pinning of magnetization seen in [110] films is related to their uniquely defined easy axis. The isothermal resistance R$_\bot$ and R$_\|$ for $\vec{I} \bot \vec{H}$ and $\vec{I} \| \vec{H}$, respectively for both polytypes follows the inequality R$_\bot >$ R$_\|$ for all ranges of fields ($0 \leq H \leq 3500Oe$) and temperatures (10K - 300K). A full fledged analysis of the rotational magnetoresistance is carried out in the framework of Döring theory for MR in single crystal samples. Strong deviations from the predicted angular dependence are seen in the irreversible regime of magnetization.

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