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Researcher profile

Z. Hossain

Z. Hossain contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hall

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Published work

8 published item(s)

preprint2022arXiv

Electronic structure and physical properties of EuAuAs single crystal

High-quality single crystals of EuAuAs were studied by means of powder x-ray diffraction, magnetization, magnetic susceptibility, heat capacity, electrical resistivity and magnetoresistance measurements. The compound crystallizes with a hexagonal structure of the ZrSiBe type (space group $P6_3/mmc$). It orders antiferromagnetically below 6 K due to the magnetic moments of divalent Eu ions. The electrical resistivity exhibits metallic behavior down to 40 K, followed by a sharp increase at low temperatures. The magnetotransport isotherms show a distinct metamagnetic-like transition in concert with the magnetization data. The antiferromagnetic ground state in \mbox{EuAuAs} was corroborated in the \textit{ab initio} electronic band structure calculations. Most remarkably, the calculations revealed the presence of nodal line without spin-orbit coupling and Dirac point with inclusion of spin-orbit coupling. The \textit{Z}$_2$ invariants under the effective time reversal and inversion symmetries make this system nontrivial topological material. Our findings, combined with experimental analysis, makes EuAuAs a plausible candidate for an antiferromagnetic topological nodal-line semimetal.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl$_2$Si$_2$

We explore the electronic and topological properties of single crystal SrAl$_2$Si$_2$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced peak near 50 K. We observe several remarkable features at low temperatures, such as large non-saturating magnetoresistance, Shubnikov-de Haas oscillations and cusp-like magneto-conductivity. The maximum value of magnetoresistance turns out to be 459\% at 2 K and 12 T. The analysis of the cusp-like feature in magneto-conductivity indicates a clear signature of weak anti-localization. Our Hall resistivity measurements confirm the presence of two types of charge carriers in SrAl$_2$Si$_2$, with low carrier density.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs

The effect of 50\% Cu doping at the Au site in the topological Dirac semimetal CaAuAs is investigated through electronic band structure calculations, electrical resistivity, and magnetotransport measurements. Electronic structure calculations a suggest broken-symmetry-driven topological phase transition from the Dirac to triple-point state in CaAuAs via alloy engineering. The electrical resistivity of both the CaAuAs and CaAu$_{0.5}$Cu$_{0.5}$As compounds shows metallic behavior. Nonsaturating quasilinear magnetoresistance (MR) behavior is observed in CaAuAs. On the other hand, MR of the doped compound shows a pronounced cusplike feature in the low-field regime. Such behavior of MR in CaAu$_{0.5}$Cu$_{0.5}$As is attributed to the weak antilocalization (WAL) effect. The WAL effect is analyzed using different theoretical models, including the semiclassical $\sim\sqrt{B}$ one which accounts for the three-dimensional WAL and modified Hikami-Larkin-Nagaoka model. Strong WAL effect is also observed in the longitudinal MR, which is well described by the generalized Altshuler-Aronov model. Our study suggests that the WAL effect originates from weak disorder and the spin-orbit coupled bulk state. Interestingly, we have also observed the signature of chiral anomaly in longitudinal MR, when both current and field are applied along the $c$ axis. The Hall resistivity measurements indicate that the charge conduction mechanism in these compounds is dominated by the holes with a concentration $\sim$10$^{20}$ cm$^{-3}$ and mobility $\sim 10^2$ cm$^2$ V$^{-1}$ S$^{-1}$.

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preprint2021arXiv

Damping in yttrium iron garnet film with an interface

We report strong damping enhancement in a 200 nm thick yttrium iron garnet (YIG) film due to spin inhomogeneity at the interface. The growth-induced thin interfacial gadolinium iron garnet (GdIG) layer antiferromagnetically (AFM) exchange couples with the rest of the YIG layer. The out-of-plane angular variation of ferromagnetic resonance (FMR) linewidth $ΔH$ reflects a large inhomogeneous distribution of effective magnetization $Δ4 πM_{eff}$ due to the presence of an exchange springlike moments arrangement in YIG. We probe the spin inhomogeneity at the YIG-GdIG interface by performing an in-plane angular variation of resonance field $H_{r}$, leading to a unidirectional feature. The large extrinsic $Δ4πM_{eff}$ contribution, apart from the inherent intrinsic Gilbert contribution, manifests enhanced precessional damping in YIG film.

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preprint2021arXiv

Nodeless superconductivity in the charge density wave superconductor LaPt$_2$Si$_2$

We have studied the superconducting gap structure of LaPt$_2$Si$_2$ by measuring the temperature dependence of the London penetration depth shift $Δλ(T)$ and point contact spectroscopy of single crystals. $Δλ(T)$ shows an exponential temperature dependence at low temperatures, and the derived normalized superfluid density $ρ_{s}(T)$ can be well described by a single-gap s-wave model. The point-contact conductance spectra can also be well fitted by an s-wave Blonder-Tinkham-Klapwijk model, where the gap value shows a typical BCS temperature and magnetic field dependence consistent with type-II superconductivity. These results suggest fully gapped superconductivity in LaPt$_2$Si$_2$, with moderately strong electron-phonon coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Evolution of charge density wave order and superconductivity under pressure in LaPt$_2$Si$_2$

We report measurements of the electrical resistivity and ac magnetic susceptibility of single crystalline LaPt$_2$Si$_2$ under pressure, in order to investigate the interplay of superconductivity and CDW order. LaPt$_2$Si$_2$ exhibits a first order phase transition from a tetragonal to orthorhombic structure, accompanied by the onset of CDW order below $T_{\rm{CDW}}$ = 76 K, while superconductivity occurs at a lower temperature of $T_{\rm{c}}$ = 1.87 K. We find that the application of pressure initially suppresses the CDW transition, but enhances $T_{\rm{c}}$. At pressures above 2.4 GPa, CDW order vanishes, while both $T_{\rm{c}}$ and the resistivity $A$-coefficient reach a maximum value around this pressure. Our results suggest that the occurrence of a superconducting dome can be accounted for within the framework of BCS theory, where there is a maximum in the density of states upon the closure of the CDW gap.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ferromagnetic Resonance Studies of Strain tuned Bi:YIG Films

Bismuth-doped Yttrium iron garnet (Bi:YIG) thin films known for large Magneto-optical activity with low losses still needs to get probed for its magnetization dynamics. We demonstrate a controlled tuning of magnetocrystalline anisotropy in Bi-doped Y_3 Fe_5 O_12 (Bi:YIG) films of high crystalline quality using growth induced epitaxial strain on [111]-oriented Gd_3 Ga_5 O_12 (GGG) substrate. We optimize a growth protocol to get thick highly-strained epitaxial films showing large magneto-crystalline anisotropy, compare to thin films prepared using a different protocol. Ferromagnetic resonance measurements establish a linear dependence of the out-of-plane uniaxial anisotropy on the strain induced rhombohedral distortion of Bi:YIG lattice. Interestingly, the enhancement in the magnetoelastic constant due to an optimum substitution of Bi^(3+) ions with strong spin orbit coupling does not strongly affect the precessional damping (~2x10^(-3) ). Large magneto-optical activity, reasonably low damping, large magnetocrystalline anisotropy and large magnetoelastic coupling in BiYIG are the properties that may help BiYIG emerge as a possible material for photo-magnonics and other spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Magnetotransport properties of the topological nodal-line semimetal CaCdSn

Topological nodal-line semimetals support protected band crossings which form nodal lines or nodal loops between the valence and conduction bands and exhibit novel transport phenomena. Here we address the topological state of the nodal-line semimetal candidate material, CaCdSn, and report magnetotransport properties of its single crystals grown by the self-flux method. Our first-principles calculations show that the electronic structure of CaCdSn harbors a single nodal loop around the $Γ$ point in the absence of spin-orbit coupling (SOC) effects. The nodal crossings in CaCdSn are found to lie above the Fermi level and yield a Fermi surface that consists of both electron and hole pockets. CaCdSn exhibits high mobility ($μ\approx 3.44\times 10^4$ cm$^2$V$^{-1}$s$^{-1}$) and displays a field-induced metal-semiconductor like crossover with a plateau in resistivity at low temperature. We observe an extremely large and quasilinear non-saturating transverse as well as longitudinal magnetoresistance (MR) at low temperatures ($\approx 7.44\times 10^3 \%$ and $\approx 1.71\times 10^3\%$, respectively, at 4K). We also briefly discuss possible reasons behind such a large quasilinear magnetoresistance and its connection with the nontrivial band structure of CaCdSn.

0 citations0 reviewsNo code linkedOpen access