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A. Rastogi

A. Rastogi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-con

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Published work

10 published item(s)

preprint2020arXiv

Enhancement in Thermally Generated Spin Voltage at Pd/NiFe$_2$O$_4$ Interfaces by the Growth on Lattice-Matched Substrates

Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $μ$m) are grown by pulsed laser deposition on isostructural spinel MgAl$_2$O$_4$, MgGa$_2$O$_4$, and CoGa$_2$O$_4$ substrates with lattice mismatch varying between 3.2% and 0.2%. For the thinner films ($\leq$ 330 nm), an increase in the spin Seebeck voltage is observed with decreasing lattice mismatch, which correlates well with a decrease in the Gilbert damping parameter as determined from ferromagnetic resonance measurements. High resolution transmission electron microscopy studies indicate substantial decrease of antiphase boundary and interface defects that cause strain-relaxation, i.e., misfit dislocations, in the films with decreasing lattice mismatch. This highlights the importance of reducing structural defects in spinel ferrites for efficient spin injection. It is further shown that angle-dependent spin Seebeck effect measurements provide a qualitative method to probe for in-plane magnetic anisotropies present in the films.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Density driven fluctuations in a two-dimensional superconductor

In the vicinity of a phase transition, the order parameter starts fluctuating before vanishing at the critical point. The fluctuation regime, i.e. the way the ordered phase disappears, is a characteristics of a transition, and determines the universality class it belongs to. This is valid for thermal transitions, but also for zero temperature Quantum Phase Transitions (QPT). In the case of superconductivity, the order parameter has an amplitude and a phase, which can both fluctuate according to well identified scenarios. The Ginzburg-Landau theory and its extensions describe the fluctuating regime of regular metallic superconductors, and the associated dynamics of the pair amplitude and the phase. When the system is two-dimensional and/or very disordered, phase fluctuations dominate. Here, we address the possibility that a new type of fluctuations occurs in superconductors with an anomalous dynamics. In particular we show that the superconducting to metal QPT that occurs upon changing the gate voltage in two-dimensional electron gases at LAO/STO and LTO/STO interfaces displays anomalous scaling properties, which can be explained by density driven superconducting critical fluctuations. A Finite Size Scaling (FSS) analysis reveals that the product z.nu (nu is the correlation length exponent and z the dynamical critical one) is z.nu = 3/2. We argue that critical superconducting fluctuations acquire an anomalous dynamics with z=3, since they couple to density ones in the vicinity of a spontaneous electronic phase separation, and that nu=1/2 corresponds to the mean-field value. This approach strongly departs from the conventional z=1 scenario in disordered 2D systems based on long-range Coulomb interactions with dominant phase fluctuations. This scenario can explain recent data in LSCO ultra-thin films, and apply to a whole class of two-dimensional superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Enhanced persistent photoconductivity in $δ$-doped LaAlO$_{3}$/SrTiO$_{3}$ heterostructures

We report the effect of $δ$-doping at LaAlO$_{3}$/SrTiO$_{3}$ interface with LaMnO$_{3}$ monolayers on the photoconducting (PC) state. The PC is realized by exposing the samples to broad band optical radiation of a quartz lamp and 325 and 441 nm lines of a He-Cd laser. Along with the significant modification in electrical transport which drives the pure LaAlO$_{3}$/SrTiO$_{3}$ interface from metal-to-insulator with increasing LaMnO$_{3}$ sub-monolayer thickness, we also observe an enhancement in the photo-response and relaxation time constant. Possible scenario for the PC based on defect-clusters, random potential fluctuations and large lattice relaxation models have been discussed. For pure LaAlO$_{3}$/SrTiO$_{3}$, the photoconductivity appears to originate from inter-band transitions between Ti-derived $3d$ bands which are $e_{g}$ in character and O 2p - Ti $t_{2g}$ hybridized bands. The band structure changes significantly when fractional layers of LaMnO$_{3}$ are introduced. Here the Mn $e_{g}$ bands ($\approx1.5$ eV above the Fermi energy) within the photo-conducting gap lead to a reduction in the photo-excitation energy and a gain in overall photoconductivity.

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preprint2014arXiv

Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces

We present a study of delta ($δ$) doping at LaTiO$_3$/SrTiO$_3$ (LTO/STO) interface with iso-structural antiferromagnetic perovskite LaCrO$_3$ (LCO) that dramatically alters the properties of the two dimensional electron gas (2-DEG) at the interface. The effects include a reduction in sheet-carrier density, prominence of the low temperature resistivity minimum, enhancement of weak antilocalization below 10 K and observation of a strong anisotropic magnetoresistance (MR). The positive and negative MR for out-of-plane and in-plane field respectively and the field and temperature dependencies of MR suggest Kondo scattering by localized Ti$^{3+}$ moments renormalized by spin-orbit interaction at T $<$ 10 K, with the increased $δ$-layer thickness. Electron energy loss spectroscopy and density functional calculations provide convincing evidence for blocking of electron transfer from LTO to STO by the $δ$-layer.

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preprint2014arXiv

Magnetothermopower of $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces in the Kondo regime

Measurements of magneto-thermopower (S(H, T)) of interfacial delta doped LaTiO$_3$/SrTiO$_3$ (LTO/STO) heterostructure by an iso-structural antiferromagnetic perovskite LaCrO$_3$ are reported. The thermoelectric power of the pure LTO/STO interface at 300 K is $\approx$ 118 $μ$V/K, but increases dramatically on $δ$-doping. The observed linear temperature dependence of S(T) over the temperature range 100 K to 300 K is in agreement with the theory of diffusion thermopower of a two-dimensional electron gas. The S(T) displays a distinct enhancement in the temperature range (T $<$ 100 K) where the sheet resistance shows a Kondo-type minimum. We attributed this maximum in S(T) to Kondo scattering of conduction electron by localized impurity spins at the interface. The suppression of S by a magnetic field, and the isotropic nature of the suppression in out-of-plane and in-plane field geometries further strengthen the Kondo model based interpretation of S(H, T).

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preprint2013arXiv

δ-doped LaAlO3-SrTiO3 interface: Electrical transport and characterization of the interface potential

Here we investigate LaAlO_3-SrTiO_3 heterostructure withδ-doping of the interface by LaMnO_3 at less than one monolayer. This doping strongly inhibits the formation of mobile electron layer at the interface. This results in giant increase of the resistance and the thermopower of the heterostructure. Several aspects of this phenomena are investigated. A model to calculate the carrier concentration is presented and effect of doping and detailed temperature dependence is analyzed in terms of model parameters and the weak-scattering theory. The large enhancement of thermopower is attributed to the increased spin and orbital entropy originating from the LaMnO_3 mono-layer.

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preprint2012arXiv

Irreversibility and time relaxation in electrostatic doping of oxide interfaces

Two-dimensional electron gas (2DEG) confined in quantum wells at insulating oxide interfaces have attracted much attention as their electronic properties display a rich physics with various electronics orders such as superconductivity and magnetism. A particularly exciting features of these hetero-structures lies in the possibility to control their electronic properties by electrostatic gating, opening up new opportunities for the development of oxide based electronics. However, unexplained gating hysteresis and time relaxation of the 2DEG resistivity have been reported in some bias range, raising the question of the precise role of the gate voltage. Here we show that in LaTiO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures, above a filling threshold, electrons irreversibly escape out of the well. This mechanism, which is directly responsible for the hysteresis and time relaxation, can be entirely described by a simple analytical model derived in this letter. Our results highlight the crucial role of the gate voltage both on the shape and the filling of the quantum well. They also demonstrate that it is possible to achieve a low-carrier density regime in a semiconductor limit, whereas the high-carrier density regime is intrinsically limited.

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preprint2012arXiv

Multiple Quantum Phase Transitions at the superconducting LaTiO3/SrTiO3 interface

We study the magnetic field driven Quantum Phase Transition (QPT) in electrostatically gated superconducting LaTiO3/SrTiO3 interfaces. Through finite size scaling analysis, we show that it belongs to the (2+1)D XY model universality class. The system can be described as a disordered array of superconducting islands coupled by a two dimensional electron gas (2DEG). Depending on the 2DEG conductance tuned by the gate voltage, the QPT is single (corresponding to the long range phase coherence in the whole array) or double (one related to local phase coherence, the other one to the array). By retrieving the coherence length critical exponent ν, we show that the QPT can be "clean" or "dirty" according to the Harris criteria, depending on whether the phase coherence length is smaller or larger than the island size. The overall behaviour is well described by a theoretical approach of Spivak et al., in the framework of the fermionic scenario of 2D superconducting QPT.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Novel photo-conducting state and its perturbation by electrostatic fields in oxide-based two-dimensional electron gas

The two-carrier transport model as proposed for the two-dimensional electron gas formed at the interfaces of oxide heterostructures is investigated by means of a combined perturbation of near ultra-violet radiation and electrostatic field, applied both separately and simultaneously. Comparison of the photo-response of the prototype systems such as the band insulator LaAlO3 and Mott insulator LaTiO3 films on TiO2 terminated SrTiO3 show remarkably similarities. Two types of non-equilibrium carriers are generated in each system, having a signature of a particular type of perturbation characterized by distinctly different relaxation process. While, the photo-conducting state diminishes in a stretched exponential manner, with a temperature dependent activation energy varying from few tens of meV to ~ 1 to 2 meV on lowering the temperature, and a relaxation time of several hours, the recovery from electrostatic gating occurs in milli-seconds time scale. An attempt is also made to explain the experimental observations using the ab-initio density functional calculations. The calculations show that the electronic transitions associated with near ultra-violet radiation emerge from bands located at ~ 2 eV above and below the Fermi energy, which are the Ti 3d states of the SrTiO3 substrate, and that from the AlO2 (TiO2) layers of the LaAlO3 (LaTiO3) films, respectively. The slow decay of the photo-current to the unperturbed state is explained in terms of the closely spaced Ti 3dxy states in the lower conduction band, which are manifested as flat bands (or localized states) in the band structure. Such localization leads to increased carrier life-times, through the energy-time relationship of the uncertainty principle.

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preprint2012arXiv

Two-dimensional superconductivity induced by high-mobility carrier doping in LaTiO3/SrTiO3 hetero-structures

In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electrons spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by field effect.

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