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Source author record

Sasikanth Manipatruni

Sasikanth Manipatruni appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallEmerging Technologiesphysics.opticscond-mat.mtrl-sciNeural and Evolutionary Computingquant-ph

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Published work

16 published item(s)

preprint2020arXiv

Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experimentally show that a favorable miniaturization law is possible via the use of spin-Hall detection of the in-plane magnetic state of a magnet. This scaling law allows us to obtain a giant signal by spin Hall effect in CoFe/Pt nanostructures and quantify an effective spin-to-charge conversion rate for the CoFe/Pt system. The spin-to-charge conversion can be described as a current source with an internal resistance, i.e., it generates an electromotive force that can be used to drive computing circuits. We predict that the spin-orbit detection of magnetic states can reach high efficiency at reduced dimensions, paving the way for scalable spin-orbit logic devices and memories.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Design of optical neural networks with component imprecisions

For the benefit of designing scalable, fault resistant optical neural networks (ONNs), we investigate the effects architectural designs have on the ONNs' robustness to imprecise components. We train two ONNs -- one with a more tunable design (GridNet) and one with better fault tolerance (FFTNet) -- to classify handwritten digits. When simulated without any imperfections, GridNet yields a better accuracy (~98%) than FFTNet (~95%). However, under a small amount of error in their photonic components, the more fault tolerant FFTNet overtakes GridNet. We further provide thorough quantitative and qualitative analyses of ONNs' sensitivity to varying levels and types of imprecisions. Our results offer guidelines for the principled design of fault-tolerant ONNs as well as a foundation for further research.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Simulation of the Magnetization Dynamics of a Single Domain BiFeO$_3$ Thin Film

The switching dynamics of a single-domain BiFeO$_3$ thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric polarization is described by the Landau-Khalatnikov (LK) equation, and the Landau-Lifshitz-Gilbert (LLG) equations for spins in two sublattices to model the time evolution of the antiferromagnetic order (Neel vector) in a G-type antiferromagnet. This work theoretically demonstrates that due to the rotation of the magnetic hard axis following the polarization reversal, the Neel vector can be switched by 180 degrees, while the weak magnetization can remain unchanged. The simulation results are consistent with the ab initio calculation, where the Neel vector rotates during polarization rotation, and also match our calculation of the dynamics of order parameter using Landau-Ginzburg theory. We also find that the switching time of the Neel vector is determined by the speed polarization switching and is predicted to be as short as 30 ps.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Experimental Demonstration of Efficient Spin-Orbit Torque Switching of an MTJ with sub-100 ns Pulses

Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the potential to provide a scalable solution for embedded memory. We demonstrate a net reduction in critical charge current for spin torque driven magnetization reversal via using spin-orbit mediated spin current generation. We scaled the dimensions of the spin-orbit electrode to 400 nm and the nanomagnet to 270 nm x 68 nm in a three terminal spin-orbit torque, magnetic tunnel junction (SOT-MTJ) geometry. Our estimated effective spin Hall angle is 0.15-0.20 using the ratio of zero temperature critical current from spin Hall switching and estimated spin current density for switching the magnet. We show bidirectional transient switching using spin-orbit generated spin torque at 100 ns switching pulses reliably followed by transient read operations. We finally compare the static and dynamic response of the SOT-MTJ with transient spin circuit modeling showing the performance of scaled SOT-MTJs to enable nanosecond class non-volatile MTJs.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low-power Spin Valve Logic using Spin-transfer Torque with Automotion of Domain Walls

A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM) wires served as interconnects, where DW automotion is used to propagate the information from one device to another. The non-reciprocity of both device and interconnect is realized by sizing different contact areas at the input and the output as well as enhancing the local damping mechanism. The proposed logic is suitable for scaling due to a high energy barrier provided by a long FM wire. Compared to the scheme based on non-local spin valves (NLSVs) in the previous proposal, the devices can be operated at lower current density due to utilizing all injected spins for local magnetization reversals, and thus improve both energy efficiency and resistance to electromigration. This device concept is justified by simulating a buffer, an inverter, and a 3-input majority gate with comprehensive numerical simulations, including spin transport through the FM/non-magnetic (NM) interfaces as well as the NM channel and stochastic magnetization dynamics inside FM wires. In addition to digital computing, the proposed framework can also be used as a transducer between DWs and spin currents for higher wiring flexibility in the interconnect network.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

On-Chip Optical Squeezing

We present the first demonstration of all-optical squeezing in an on-chip monolithically integrated CMOS-compatible platform. Our device consists of a low loss silicon nitride microring optical parametric oscillator (OPO) with a gigahertz cavity linewidth. We measure 1.7 dB (5 dB corrected for losses) of sub-shot noise quantum correlations between bright twin beams generated in the microring four-wave-mixing OPO pumped above threshold. This experiment demonstrates a compact, robust, and scalable platform for quantum optics and quantum information experiments on-chip.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Experimental Demonstration of the Co-existence of the Spin Hall and Rashba Effects in beta-Tantalum/Ferromagnet Bilayers

We have measured the spin torques of beta-Tantalum / Co20Fe60B20 bilayers versus Ta thickness at room temperature using an FMR technique. The spin Hall coefficient was calculated both from the observed change in damping coefficient of the ferromagnet with Ta thickness, and from the ratio of the symmetric and anti-symmetric components of the FMR signal. Results from these two methods yielded values for the spin Hall coefficient of -0.090+/-0.005 and -0.11+/-0.01, respectively. We have also identified a significant out-of-plane spin torque originating from Ta, which is constant with Ta thickness. We ascribe this to an interface spin orbit coupling, or Rashba effect, due to the strength and constancy of the torque with Ta thickness. From fitting measured data to a model including interface spin orbit coupling, we have determined the spin diffusion length for beta-Tantalum to be ~2.5 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Automotion of Domain Walls for Spintronic Interconnects

We simulate automotion, the spontaneous transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall motion, the proposed interconnects operate with only a transient current pulse and provide favorable scaling down to the 20nm scale. Cases of both in-plane and perpendicular magnetization are considered. Analytical dependence of the velocity of domain walls on the angle of magnetization are compared with full micromagnetic simulations. Deceleration, disappearance, and reflection of domain walls are demonstrated. Dependences of the magnetization angle on the current pulse parameters are studied. The energy and delay analysis suggests that automotion is an attractive option for spintronic logic interconnects.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Voltage and Energy-Delay Performance of Giant Spin Hall Effect Switching for Magnetic Memory and Logic

In this letter, we show that Giant Spin Hall Effect (GSHE) MRAM can enable better energy- delay and voltage performance than traditional MTJ based spin torque devices at scaled nanomagnet dimensions (10-30 nm). Firstly, we derive the effect of dimensional scaling on spin injection efficiency, voltage-delay and energy-delay of spin torque switching using MTJs and GSHE and identify the optimum electrode geometry for low operating voltage (<0.1 V), high speed (>10 GHz) operation. We show that effective spin injection efficiency >100 % can be obtained using optimum spin hall electrode thickness for 30 nm nanomagnet widths. Finally, we derive the energy-delay trajectory of GSHE and MTJ devices to calculate the energy-delay product of GSHE and MTJ devices with an energy minimum at the characteristic time of the magnets. Optimized GSHE devices when combined with PMA can enable MRAM with scaled nanomagnets (30 nm X 60 nm), ultra-low voltage operation (< 0.1 V), fast switching times (10 ps) and switching energy as low as 100 aJ/bit.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

All Spin Nano-magnetic State Elements

We propose an all spin state element to enable all spin state machines using spin currents and nanomagnets. We demonstrate via numerical simulations the operation of a state element a critical building block for synchronous, sequential logic computation. The numerical models encompass Landau-Lifshitz-Gilbert (LLG) nanomagnet dynamics with stochastic models and vector spin-transport in metallic magnetic and non-magnetic channels. Combined with all spin combinatorial logic, the state elements can enable synchronous and asynchronous computing elements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Circuit Theory for SPICE of Spintronic Integrated Circuits

We present a theoretical and a numerical formalism for analysis and design of spintronic integrated circuits (SPINICs). The formalism encompasses a generalized circuit theory for spintronic integrated circuits based on nanomagnetic dynamics and spin transport. We propose an extension to the Modified Nodal Analysis technique for the analysis of spin circuits based on the recently developed spin conduction matrices. We demonstrate the applicability of the framework using an example spin logic circuit described using spin Netlists.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Device Considerations for Nanophotonic CMOS Global Interconnects

We introduce an analytical framework to understand the path for scaling nanophotonic interconnects to meet the energy and footprint requirements of CMOS global interconnects. We derive the device requirements for sub 100 fJ/cm/bit interconnects including tuning power, serialization-deserialization energy, optical insertion losses, extinction ratio and bit error rates. Using CMOS with integrated nanophotonics as an example platform, we derive the energy/bit, linear and areal bandwidth density of optical interconnects. We also derive the targets for device performance which indicate the need for continued improvements in insertion losses (<8dB), laser efficiency, operational speeds (>40 Gb/s), tuning power (<100 μW/nm), serialization-deserialization (< 10 fJ/bit/Operation) and necessity for spectrally selective devices with wavelength multiplexing (> 6 channels).

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Material Targets for Scaling All Spin Logic

All-spin logic devices are promising candidates to augment and complement beyond-CMOS integrated circuit computing due to non-volatility, ultra-low operating voltages, higher logical efficiency, and high density integration. However, the path to reach lower energy-delay product performance compared to CMOS transistors currently is not clear. We show that scaling and engineering the nanoscale magnetic materials and interfaces is the key to realizing spin logic devices that can surpass energy-delay performance of CMOS transistors. With validated stochastic nano-magnetic and vector spin transport numerical models, we derive the target material and interface properties for the nanomagnets and channels. We identified promising new directions for material engineering/discovery focusing on systematic scaling of magnetic anisotropy (Hk) with saturation magnetization (Ms), use of perpendicular magnetic anisotropy, and interface spin mixing conductance of ferromagnet/spin channel interface (Gmix). We provide systematic targets for scaling spin logic energy-delay product toward a 2 aJ.ns energy-delay product, comprehending the stochastic noise for nanomagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Synchronization of Micromechanical Oscillators Using Light

Synchronization, the emergence of spontaneous order in coupled systems, is of fundamental importance in both physical and biological systems. We demonstrate the synchronization of two dissimilar silicon nitride micromechanical oscillators, that are spaced apart by a few hundred nanometers and are coupled through optical radiation field. The tunability of the optical coupling between the oscillators enables one to externally control the dynamics and switch between coupled and individual oscillation states. These results pave a path towards reconfigurable massive synchronized oscillator networks.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Broadband Tuning of Optomechanical Cavities

We demonstrate broadband tuning of an optomechanical microcavity optical resonance by exploring the large optomechanical coupling of a double-wheel microcavity and its uniquely low mechanical stiffness. Using a pump laser with only 13 mW at telecom wavelengths we show tuning of the silicon nitride microcavity resonances over 32 nm. This corresponds to a tuning power efficiency of only 400 $μ$W/nm. By choosing a relatively low optical Q resonance ($\approx$18,000) we prevent the cavity from reaching the regime of regenerative optomechanical oscillations. The static mechanical displacement induced by optical gradient forces is estimated to be as large as 60 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Integrated GHz silicon photonic interconnect with micrometer-scale modulators and detectors

We report an optical link on silicon using micrometer-scale ring-resonator enhanced silicon modulators and waveguide-integrated germanium photodetectors. We show 3 Gbps operation of the link with 0.5 V modulator voltage swing and 1.0 V detector bias. The total energy consumption for such a link is estimated to be ~120 fJ/bit. Such compact and low power monolithic link is an essential step towards large-scale on-chip optical interconnects for future microprocessors.

0 citations0 reviewsNo code linkedOpen access