Researcher profile

Sasikanth Manipatruni

Sasikanth Manipatruni contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experimentally show that a favorable miniaturization law is possible via the use of spin-Hall detection of the in-plane magnetic state of a magnet. This scaling law allows us to obtain a giant signal by spin Hall effect in CoFe/Pt nanostructures and quantify an effective spin-to-charge conversion rate for the CoFe/Pt system. The spin-to-charge conversion can be described as a current source with an internal resistance, i.e., it generates an electromotive force that can be used to drive computing circuits. We predict that the spin-orbit detection of magnetic states can reach high efficiency at reduced dimensions, paving the way for scalable spin-orbit logic devices and memories.

preprint2019arXiv

Design of optical neural networks with component imprecisions

For the benefit of designing scalable, fault resistant optical neural networks (ONNs), we investigate the effects architectural designs have on the ONNs' robustness to imprecise components. We train two ONNs -- one with a more tunable design (GridNet) and one with better fault tolerance (FFTNet) -- to classify handwritten digits. When simulated without any imperfections, GridNet yields a better accuracy (~98%) than FFTNet (~95%). However, under a small amount of error in their photonic components, the more fault tolerant FFTNet overtakes GridNet. We further provide thorough quantitative and qualitative analyses of ONNs' sensitivity to varying levels and types of imprecisions. Our results offer guidelines for the principled design of fault-tolerant ONNs as well as a foundation for further research.

preprint2019arXiv

Simulation of the Magnetization Dynamics of a Single Domain BiFeO$_3$ Thin Film

The switching dynamics of a single-domain BiFeO$_3$ thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric polarization is described by the Landau-Khalatnikov (LK) equation, and the Landau-Lifshitz-Gilbert (LLG) equations for spins in two sublattices to model the time evolution of the antiferromagnetic order (Neel vector) in a G-type antiferromagnet. This work theoretically demonstrates that due to the rotation of the magnetic hard axis following the polarization reversal, the Neel vector can be switched by 180 degrees, while the weak magnetization can remain unchanged. The simulation results are consistent with the ab initio calculation, where the Neel vector rotates during polarization rotation, and also match our calculation of the dynamics of order parameter using Landau-Ginzburg theory. We also find that the switching time of the Neel vector is determined by the speed polarization switching and is predicted to be as short as 30 ps.