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Dmitri E. Nikonov

Dmitri E. Nikonov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallEmerging Technologiescond-mat.mtrl-scicond-mat.dis-nnphysics.app-phquant-phComputer Visioncond-mat.otherNeural and Evolutionary Computingnlin.PS

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Published work

27 published item(s)

preprint2022arXiv

Integer Factorization with Compositional Distributed Representations

In this paper, we present an approach to integer factorization using distributed representations formed with Vector Symbolic Architectures. The approach formulates integer factorization in a manner such that it can be solved using neural networks and potentially implemented on parallel neuromorphic hardware. We introduce a method for encoding numbers in distributed vector spaces and explain how the resonator network can solve the integer factorization problem. We evaluate the approach on factorization of semiprimes by measuring the factorization accuracy versus the scale of the problem. We also demonstrate how the proposed approach generalizes beyond the factorization of semiprimes; in principle, it can be used for factorization of any composite number. This work demonstrates how a well-known combinatorial search problem may be formulated and solved within the framework of Vector Symbolic Architectures, and it opens the door to solving similarly difficult problems in other domains.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits

Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is required. Here we present physics-based device models based on 4x4 matrices for the spin-orbit coupling part of the magneto-electric spin-orbit (MESO) device. Also, a more rigorous physics model of ferroelectric and magnetoelectric switching of ferromagnets, based on Landau-Lifshitz-Gilbert (LLG) and Landau-Khalatnikov (LK) equations, is presented. With the combined model implemented in a SPICE circuit simulator environment, simulation results were obtained which show feasibility of MESO implementation and functional operation of buffers, oscillators, and majority gates.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction

The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental results. The lower limit of the magnetic order response time of CoFe in the BiFeO3/CoFe heterojunction is theoretically quantified to be on to the order of 100 ps. Our results indicate that the switching behavior of CoFe in the BiFeO3/CoFe heterojunction is dominated by the rotation of the Neel vector in BiFeO3 rather than the unidirectional exchange bias at the interface. We also quantify the magnitude of the interface exchange coupling coefficient J_int to be 0.32 pJ/m by comparing our simulation results with the giant magnetoresistance (GMR) curves and the magnetic hysteresis loop in the experiments. To the best of our knowledge, this is the first time that J_int is extracted quantitatively from experiments. Furthermore, we demonstrate that the switching success rate and the thermal stability of the BiFeO3/CoFe heterojunction can be improved by reducing the thickness of CoFe and increasing the length to width aspect ratio of the BiFeO3/CoFe heterojunction. Our theoretical model provides a comprehensive framework to study the magnetoelectric properties and the manipulation of the magnetic order of CoFe in the BiFeO3/CoFe heterojunction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experimentally show that a favorable miniaturization law is possible via the use of spin-Hall detection of the in-plane magnetic state of a magnet. This scaling law allows us to obtain a giant signal by spin Hall effect in CoFe/Pt nanostructures and quantify an effective spin-to-charge conversion rate for the CoFe/Pt system. The spin-to-charge conversion can be described as a current source with an internal resistance, i.e., it generates an electromotive force that can be used to drive computing circuits. We predict that the spin-orbit detection of magnetic states can reach high efficiency at reduced dimensions, paving the way for scalable spin-orbit logic devices and memories.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Multi-domain Characterization of Ferroelectric Switching Dynamics with a Physics-based SPICE Circuit Model for Phase Field Simulations

In this paper, the multi-domain nature of ferroelectric (FE) polarization switching dynamics in a metal-ferroelectric-metal (MFM) capacitor is explored through a physics-based phase field approach, where the three-dimensional time-dependent Ginzburg-Landau (TDGL) equation and Poisson's equation are self-consistently solved with the SPICE simulator. Systematically calibrated based on the experimental measurements, the model well captures transient negative capacitance in pulse switching dynamics, with domain interaction and viscosity being the key parameters. It is found that the influence of pulse amplitudes on voltage transient behaviors can be attributed to the fact that the FE free energy profile strongly depends on how the domains are interacted. This finding has an important implication on the charge-boost induced by stabilization of negative capacitance in an FE + dielectric (DE) stack since the so-called capacitance matching needs to be designed at a specific operation voltage or frequency. In addition, we extract the domain viscosity dynamics during polarization switching according to the experimental measurements. For the first time, a physics-based circuit-compatible SPICE model for multi-domain phase field simulations is established to reveal the effect of domain interaction on the FE energy profile and microscopic domain evolution.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Simulation of the Magnetization Dynamics of a Single Domain BiFeO$_3$ Thin Film

The switching dynamics of a single-domain BiFeO$_3$ thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric polarization is described by the Landau-Khalatnikov (LK) equation, and the Landau-Lifshitz-Gilbert (LLG) equations for spins in two sublattices to model the time evolution of the antiferromagnetic order (Neel vector) in a G-type antiferromagnet. This work theoretically demonstrates that due to the rotation of the magnetic hard axis following the polarization reversal, the Neel vector can be switched by 180 degrees, while the weak magnetization can remain unchanged. The simulation results are consistent with the ab initio calculation, where the Neel vector rotates during polarization rotation, and also match our calculation of the dynamics of order parameter using Landau-Ginzburg theory. We also find that the switching time of the Neel vector is determined by the speed polarization switching and is predicted to be as short as 30 ps.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low-power Spin Valve Logic using Spin-transfer Torque with Automotion of Domain Walls

A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM) wires served as interconnects, where DW automotion is used to propagate the information from one device to another. The non-reciprocity of both device and interconnect is realized by sizing different contact areas at the input and the output as well as enhancing the local damping mechanism. The proposed logic is suitable for scaling due to a high energy barrier provided by a long FM wire. Compared to the scheme based on non-local spin valves (NLSVs) in the previous proposal, the devices can be operated at lower current density due to utilizing all injected spins for local magnetization reversals, and thus improve both energy efficiency and resistance to electromigration. This device concept is justified by simulating a buffer, an inverter, and a 3-input majority gate with comprehensive numerical simulations, including spin transport through the FM/non-magnetic (NM) interfaces as well as the NM channel and stochastic magnetization dynamics inside FM wires. In addition to digital computing, the proposed framework can also be used as a transducer between DWs and spin currents for higher wiring flexibility in the interconnect network.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Convolutional Networks for Image Processing by Coupled Oscillator Arrays

A coupled oscillator array is shown to approximate convolutions with Gabor filters for image processing tasks. Pixelated image fragments and filter functions are converted to voltages, differenced, and input into a corresponding array of weakly coupled Voltage Controlled Oscillators (VCOs). This is referred to as Frequency Shift Keying (FSK). Upon synchronization of the array, the common node amplitude provides a metric for the degree of match between the image fragment and the filter function. The optimal oscillator parameters for synchronization are determined and favor a moderate value of the Q-factor.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Experimental Demonstration of the Co-existence of the Spin Hall and Rashba Effects in beta-Tantalum/Ferromagnet Bilayers

We have measured the spin torques of beta-Tantalum / Co20Fe60B20 bilayers versus Ta thickness at room temperature using an FMR technique. The spin Hall coefficient was calculated both from the observed change in damping coefficient of the ferromagnet with Ta thickness, and from the ratio of the symmetric and anti-symmetric components of the FMR signal. Results from these two methods yielded values for the spin Hall coefficient of -0.090+/-0.005 and -0.11+/-0.01, respectively. We have also identified a significant out-of-plane spin torque originating from Ta, which is constant with Ta thickness. We ascribe this to an interface spin orbit coupling, or Rashba effect, due to the strength and constancy of the torque with Ta thickness. From fitting measured data to a model including interface spin orbit coupling, we have determined the spin diffusion length for beta-Tantalum to be ~2.5 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Automotion of Domain Walls for Spintronic Interconnects

We simulate automotion, the spontaneous transport of a magnetic domain wall under the influence of demagnetization and magnetic anisotropy, in nanoscale spintronic interconnects. In contrast to spin transfer driven magnetic domain wall motion, the proposed interconnects operate with only a transient current pulse and provide favorable scaling down to the 20nm scale. Cases of both in-plane and perpendicular magnetization are considered. Analytical dependence of the velocity of domain walls on the angle of magnetization are compared with full micromagnetic simulations. Deceleration, disappearance, and reflection of domain walls are demonstrated. Dependences of the magnetization angle on the current pulse parameters are studied. The energy and delay analysis suggests that automotion is an attractive option for spintronic logic interconnects.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Charge-Resistance Approach to Benchmarking Performance of Beyond-CMOS Information Processing Devices

Multiple beyond-CMOS information processing devices are presently under active research and require methods of benchmarking them. A new approach for calculating the performance metric, energy-delay product, of such devices is proposed. The approach involves estimating the device properties of resistance and switching charge, rather than dynamic evolution characteristics, such as switching energy and time. Application of this approach to a wide class of charge-based and non-charge based devices is discussed. The approach suggests pathways for improving the performance of beyond-CMOS devices and a new realistic limit for energy-delay product in terms of the Planks constant.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coupled-Oscillator Associative Memory Array Operation

Operation of the array of coupled oscillators underlying the associative memory function is demonstrated for various interconnection schemes (cross-connect, star phase keying and star frequency keying) and various physical implementation of oscillators (van der Pol, phase-locked loop, spin torque). The speed of synchronization of oscillators and the evolution of the degree of matching is studied as a function of device parameters. The dependence of errors in association on the number of the memorized patterns and the distance between the test and the memorized pattern is determined for Palm, Furber and Hopfield association algorithms.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Overview of Beyond-CMOS Devices and A Uniform Methodology for Their Benchmarking

Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described. Theories used for benchmarking these devices are overviewed, and a general methodology is described for consistent estimates of the circuit area, switching time and energy. The results of the comparison of the NRI logic devices using these benchmarks are presented.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Voltage and Energy-Delay Performance of Giant Spin Hall Effect Switching for Magnetic Memory and Logic

In this letter, we show that Giant Spin Hall Effect (GSHE) MRAM can enable better energy- delay and voltage performance than traditional MTJ based spin torque devices at scaled nanomagnet dimensions (10-30 nm). Firstly, we derive the effect of dimensional scaling on spin injection efficiency, voltage-delay and energy-delay of spin torque switching using MTJs and GSHE and identify the optimum electrode geometry for low operating voltage (<0.1 V), high speed (>10 GHz) operation. We show that effective spin injection efficiency >100 % can be obtained using optimum spin hall electrode thickness for 30 nm nanomagnet widths. Finally, we derive the energy-delay trajectory of GSHE and MTJ devices to calculate the energy-delay product of GSHE and MTJ devices with an energy minimum at the characteristic time of the magnets. Optimized GSHE devices when combined with PMA can enable MRAM with scaled nanomagnets (30 nm X 60 nm), ultra-low voltage operation (< 0.1 V), fast switching times (10 ps) and switching energy as low as 100 aJ/bit.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

All Spin Nano-magnetic State Elements

We propose an all spin state element to enable all spin state machines using spin currents and nanomagnets. We demonstrate via numerical simulations the operation of a state element a critical building block for synchronous, sequential logic computation. The numerical models encompass Landau-Lifshitz-Gilbert (LLG) nanomagnet dynamics with stochastic models and vector spin-transport in metallic magnetic and non-magnetic channels. Combined with all spin combinatorial logic, the state elements can enable synchronous and asynchronous computing elements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Circuit Theory for SPICE of Spintronic Integrated Circuits

We present a theoretical and a numerical formalism for analysis and design of spintronic integrated circuits (SPINICs). The formalism encompasses a generalized circuit theory for spintronic integrated circuits based on nanomagnetic dynamics and spin transport. We propose an extension to the Modified Nodal Analysis technique for the analysis of spin circuits based on the recently developed spin conduction matrices. We demonstrate the applicability of the framework using an example spin logic circuit described using spin Netlists.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electron-Phonon Scattering in Planar MOSFETs: NEGF and Monte Carlo Methods

A formalism for incorporating electron-phonon scattering into the nonequilibrium Green's function (NEGF) framework that is applicable to planar MOSFETs is presented. Restructuring the NEGF equations in terms of approximate summation of transverse momentum modes leads to a rigorous and efficient method of solution. This helps to drastically reduce the computational complexity, allowing treatment of both quantum mechanics and dissipative electron-phonon scattering processes for device sizes from nanometers to microns. The formalism is systematically benchmarked against Monte Carlo solutions of the classical Boltzmann transport for model potential profiles. Results show a remarkably close agreement between the two methods for variety of channel lengths and bias conditions, both for elastic and inelastic scattering processes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Material Targets for Scaling All Spin Logic

All-spin logic devices are promising candidates to augment and complement beyond-CMOS integrated circuit computing due to non-volatility, ultra-low operating voltages, higher logical efficiency, and high density integration. However, the path to reach lower energy-delay product performance compared to CMOS transistors currently is not clear. We show that scaling and engineering the nanoscale magnetic materials and interfaces is the key to realizing spin logic devices that can surpass energy-delay performance of CMOS transistors. With validated stochastic nano-magnetic and vector spin transport numerical models, we derive the target material and interface properties for the nanomagnets and channels. We identified promising new directions for material engineering/discovery focusing on systematic scaling of magnetic anisotropy (Hk) with saturation magnetization (Ms), use of perpendicular magnetic anisotropy, and interface spin mixing conductance of ferromagnet/spin channel interface (Gmix). We provide systematic targets for scaling spin logic energy-delay product toward a 2 aJ.ns energy-delay product, comprehending the stochastic noise for nanomagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Role of Phonon Scattering in Graphene Nanoribbon Transistors: Non-Equilibrium Green's Function Method with Real Space Approach

Mode space approach has been used so far in NEGF to treat phonon scattering for computational efficiency. Here we perform a more rigorous quantum transport simulation in real space to consider interband scatterings as well. We show a seamless transition from ballistic to dissipative transport in graphene nanoribbon transistors by varying channel length. We find acoustic phonon (AP) scattering to be the dominant scattering mechanism within the relevant range of voltage bias. Optical phonon scattering is significant only when a large gate voltage is applied. In a longer channel device, the contribution of AP scattering to the dc current becomes more significant.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits

The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we believe will apply to BTBT FETs vs. MOSFETs more generally. We use pz-orbital tight-binding Hamiltonian and the non-equilibrium Green function (NEGF) formalism for rigorous treatment of dissipative quantum transport. A device level comparison of p-i-n TFETs and n-i-n MOSFETs in both ballistic and dissipative cases has been performed previously. In this paper, the possibility of using p-i-n TFETs in ultra-low power sub-threshold logic circuits is investigated using a rigorous numerical simulator. The results show that, in sub-threshold circuit operation, the p-i-n TFETs have better DC characteristics, and can deliver ~15x higher performance at the iso-P_LEAKAGE, iso-VDD conditions. Because p-i-n TFETs can operate at lower VDD than n-i-n MOSFETs, they can deliver ~3x higher performance at the same power (P_OPERATION). This results in ~3x energy reduction under iso-delay conditions. Therefore the p-i-n TFETs are more suitable for sub-threshold logic operation.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Proposal of a spin torque majority gate logic

A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is switched by spin transfer torque. Validity of its logic operation is demonstrated by micromagnetic simulation. A version of such devices with perpendicular magnetization is examined. Switching encompasses moving domain walls. The device reuses most of the materials and structures from spin torque RAM, and is entirely compatible with CMOS technology.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance

A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the tunneling barrier between the source/drain and the channel. Account for these factors permits setting more realistic performance limits for the transistor, especially the magnetoresistance, which is found to be lower compared to earlier predictions. The interplay between tunneling and spin relaxation is elucidated by numerical simulation. Insertion of the tunneling barrier leads to an increased magnetoresistance. Numerical simulations are used to explore the tunneling barrier design issues.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Strategies and tolerances of spin transfer torque switching

Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that switching with perpendicularly polarized current by short pulses and free precession requires smaller time and energy than spin torque switching with collinear in plane spin polarization; it is also found to be superior to other kinds of memories. We study the tolerances of switching to the magnitude of current and pulse duration. An increased Gilbert damping is found to improve tolerances of perpendicular switching without increasing the threshold current, unlike in plane switching.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Magnetoelectric Spin Wave Amplifier for Spin Wave Logic Circuits

We propose and analyze a spin wave amplifier aimed to enhance the amplitude of the propagating spin wave via the magnetoelectric effect. The amplifier is a two-layer multiferroic structure, which comprises piezoelectric and ferromagnetic materials. By applying electric field to the piezoelectric layer, the stress is produced. In turn, the stress changes the direction of the easy axis in the ferromagnetic layer and the direction of the anisotropy field. The rotation frequency of the easy axis is the same as the frequency of the spin wave propagating through the ferromagnetic layer. As a result of this two-stage process, the amplitude of the spin wave can be amplified depending on the angle of the easy axis rotation. We present results of numerical simulations illustrating the operation of the proposed amplifier. According to numerical estimates, the amplitude of the spin wave signal can be increased by several orders of magnitude. The energy efficiency of the electric-to-magnetic power conversion is discussed. The proposed amplifier preserves the phase of the initial signal, which is important for application to logic circuits based on spin waves.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the non-equilibrium Green's functions formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (Y. Lu et al, J. Am. Chem. Soc., v. 128, p. 3518-3519, 2006), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that under large biasing conditions two-phonon scattering may also become important.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40mV/decade despite the effect of phonon scattering.

0 citations0 reviewsNo code linkedOpen access