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Michal Lipson

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Published work

50 published item(s)

preprint2023arXiv

Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

The fabrication processes of silicon nitride photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, we show that propagation loss as low as 0.42 dB/cm can be achieved using foundry compatible processes by solely reducing waveguide surface roughness. By post-processing the fabricated devices using rapid thermal anneal (RTA) and furnace anneal, we achieve propagation losses down to 0.28 dB/cm and 0.06 dB/cm, respectively. These low losses are comparable to the conventional devices using high temperature, high-stress low-pressure chemical vapor deposition (LPCVD) films. We also tune the dispersion of the devices, and proved that these devices can be used for linear and nonlinear applications. Low threshold parametric oscillation, broadband frequency combs and narrow-linewidth laser are demonstrated. Our work demonstrates the feasibility of scalable photonic systems based on foundries.

preprint2022arXiv

Fabrication-Robust Silicon Photonic Devices in Standard Sub-Micron Silicon-on-Insulator Processes

Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such variations are particularly troublesome for phase-sensitive devices such as interferometers and resonators, which exhibit drastic changes in performance as a result of these fabrication-induced phase errors. In this Letter, we propose and experimentally demonstrate a design methodology for dramatically reducing device sensitivity to silicon width variations. We apply this methodology to a highly phase-sensitive device, the ring-assisted Mach Zehnder interferometer (RAMZI), and show comparable performance and footprint to state-of-the-art devices while substantially reducing stochastic phase errors from etch variations. This decrease in sensitivity is directly realized as energy savings by significantly lowering the required corrective thermal tuning power, providing a promising path towards ultra-energy-efficient large-scale silicon photonic circuits.

preprint2022arXiv

High Power on-chip Integrated Laser

The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high power is the low energy efficiency at high pumping currents, dictated by the small size of the active device. Here we break this power limitation by demonstrating a platform that relies on the coupling of a broad-area multimode gain to a silicon-nitride feedback chip, which acts as an external cavity. The feedback provided by the silicon-nitride chip is routed through a ring resonator and a single-mode filter, thus causing the otherwise multimode-gain chip to concentrate its power into a single highly-coherent mode. Our device produces more than 150 mW of power and 400 kHz linewidth. We achieve these high-performance metrics while maintaining a small footprint of 3 mm^2.

preprint2022arXiv

Measurements and modeling of atomic-scale sidewall roughness and losses in integrated photonic devices

Atomic-level imperfections play an increasingly critical role in nanophotonic device performance. However, it remains challenging to accurately characterize the sidewall roughness with sub-nanometer resolution and directly correlate this roughness with device performance. We have developed a method that allows us to measure the sidewall roughness of waveguides made of any material (including dielectrics) using the high resolution of atomic force microscopy. We illustrate this method by measuring state-of-the-art photonic devices made of silicon nitride. We compare the roughness of devices fabricated using both DUV photo-lithography and electron-beam lithography for two different etch processes. To correlate roughness with device performance we describe what we call a new Payne-Lacey Bending model, which adds a correction factor to the widely used Payne-Lacey model so that losses in resonators and waveguides with bends can be accurately predicted given the sidewall roughness, waveguide width and bending radii. Having a better way to measure roughness and use it to predict device performance can allow researchers and engineers to optimize fabrication for state-of-the-art photonics using many materials.

preprint2020arXiv

Broadband Ultrahigh-Resolution chip-scale Scanning Soliton Dual-Comb Spectroscopy

We present a chip-scale scanning dual-comb spectroscopy (SDCS) approach for broadband ultrahigh-resolution spectral acquisition. SDCS uses Si3N4 microring resonators that generate two single soliton micro-combs spanning 37 THz (300 nm) on the same chip from a single 1550-nm laser, forming a high-mutual-coherence dual-comb. We realize continuous tuning of the dual-comb system over the entire optical span of 37.5 THz with high precision using integrated microheater-based wavelength trackers. This continuous wavelength tuning is enabled by simultaneous tuning of the laser frequency and the two single soliton micro-combs over a full free spectral range of the microrings. We measure the SDCS resolution to be 319+-4.6 kHz. Using this SDCS system, we perform the molecular absorption spectroscopy of H13C14N over its 2.3 THz (18 nm)-wide overtone band, and show that the massively parallel heterodyning offered by the dual-comb expands the effective spectroscopic tuning speed of the laser by one order of magnitude. Our chip-scale SDCS opens the door to broadband spectrometry and massively parallel sensing with ultrahigh spectral resolution.

preprint2020arXiv

Frequency-Domain Quantum Interference with Correlated Photons from an Integrated Microresonator

Frequency encoding of quantum information together with fiber and integrated photonic technologies can significantly reduce the complexity and resource requirements for realizing all-photonic quantum networks. The key challenge for such frequency domain processing of single photons is to realize coherent and selective interactions between quantum optical fields of different frequencies over a range of bandwidths. Here, we report frequency-domain Hong-Ou-Mandel interference with spectrally distinct photons generated from a chip-based microresonator. We use four-wave mixing to implement an active frequency beam-splitter and achieve interference visibilities of $0.95 \pm 0.02$. Our work establishes four-wave mixing as a tool for selective high-fidelity two-photon operations in the frequency domain which, combined with integrated single-photon sources, provides a building block for frequency-multiplexed photonic quantum networks.

preprint2020arXiv

Nanophotonic spin-glass for realization of a coherent Ising machine

The need for solving optimization problems is prevalent in a wide range of physical applications, including neuroscience, network design, biological systems, socio-economics, and chemical reactions. Many of these are classified as non-deterministic polynomial-time (NP) hard and thus become intractable to solve as the system scales to a large number of elements. Recent research advances in photonics have sparked interest in using a network of coupled degenerate optical parametric oscillators (DOPO's) to effectively find the ground state of the Ising Hamiltonian, which can be used to solve other combinatorial optimization problems through polynomial-time mapping. Here, using the nanophotonic silicon-nitride platform, we propose a network of on-chip spatial-multiplexed DOPO's for the realization of a photonic coherent Ising machine. We demonstrate the generation and coupling of two microresonator-based DOPO's on a single chip. Through a reconfigurable phase link, we achieve both in-phase and out-of-phase operation, which can be deterministically achieved at a fast regeneration speed of 400 kHz with a large phase tolerance. Our work provides the critical building blocks towards the realization of a chip-scale photonic Ising machine.

preprint2020arXiv

Near-degenerate quadrature-squeezed vacuum generation on a silicon-nitride chip

Squeezed states are a primary resource for continuous-variable (CV) quantum information processing. To implement CV protocols in a scalable and robust way, it is desirable to generate and manipulate squeezed states using an integrated photonics platform. In this Letter, we demonstrate the generation of quadrature-phase squeezed states in the radio-frequency carrier sideband using a small-footprint silicon-nitride microresonator with a dual-pumped four-wave-mixing process. We record a squeezed noise level of 1.34 dB ($\pm$0.16 dB) below the photocurrent shot noise, which corresponds to 3.09 dB ($\pm$0.49 dB) of quadrature squeezing on chip. We also show that it is critical to account for the nonlinear behavior of the pump fields to properly predict the squeezing that can be generated in this system. This technology represents a significant step toward creating and manipulating large-scale CV cluster states that can be used for quantum information applications including universal quantum computing.

preprint2020arXiv

Visible nonlinear photonics via high-order-mode dispersion engineering

Over the past decade, remarkable advances have been realized in chip-based nonlinear photonic devices for classical and quantum applications in the near- and mid-infrared regimes. However, few demonstrations have been realized in the visible and near-visible regimes, primarily due to the large normal material group-velocity dispersion (GVD) that makes it challenging to phase match third-order parametric processes. In this paper, we show that exploiting dispersion engineering of higher-order waveguide modes provides waveguide dispersion that allows for small or anomalous GVD in the visible and near-visible regimes and phase matching of four-wave mixing processes. We illustrate the power of this concept by demonstrating in silicon nitride microresonators a near-visible modelocked Kerr frequency comb and a narrow-band photon-pair source compatible with Rb transitions. These realizations extend applications of nonlinear photonics towards the visible and near-visible regimes for applications in time and frequency metrology, spectral calibration, quantum information, and biomedical applications.

preprint2019arXiv

Integrated near-field thermo-photovoltaics for on-demand heat recycling

The energy transferred via thermal radiation between two surfaces separated by nanometers distances (near-field) can be much larger than the blackbody limit. However, realizing a reconfigurable platform that utilizes this energy exchange mechanism to generate electricity in industrial and space applications on-demand, remains a challenge. The challenge lies in designing a platform that can separate two surfaces by a small and tunable gap while simultaneously maintaining a large temperature differential. Here, we present a fully integrated, reconfigurable and scalable platform operating in near-field regime that performs controlled heat extraction and energy recycling. Our platform relies on an integrated nano-electromechanical system (NEMS) that enables precise positioning of a large area thermal emitter within nanometers distances from a room-temperature germanium photodetector to form a thermo-photovoltaic (TPV) cell. We show over an order of magnitude higher power generation $\mathrm{P_{gen} \sim 1.25 \, μW \cdot cm^{-2}}$ from our TPV cell by tuning the gap between a hot emitter ($\mathrm{T_E \sim 880 \, K}$) and the cold photodetector ($\mathrm{T_D \sim 300 \, K}$) from $\mathrm{\sim 500 \, nm}$ to $\mathrm{\sim 100 \, nm}$. The significant enhancement in $\mathrm{P_{gen}}$ at such small distances is a clear indication of near-field heat transfer effect. Our electrostatically controlled NEMS switch consumes negligible tuning power ($\mathrm{P_{gen}/P_{NEMS} \sim 10^4}$) and relies on conventional silicon-based process technologies.

preprint2019arXiv

Low-loss composite photonic platform based on 2D semiconductor monolayers

Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The optical properties of TMDs have been shown to change drastically with doping in the wavelength range near the excitonic resonances. However, little is known about the effect of doping on the optical properties of TMDs away from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. Here, we probe the electro-optic response of monolayer TMDs at near infrared (NIR) wavelengths (i.e. deep in the transparency regime), by integrating them on silicon nitride (SiN) photonic structures to induce strong light$-$matter interaction with the monolayer. We dope the monolayer to carrier densities of ($7.2 \pm 0.8$) $\times$ $10^{13} \textrm{cm}^{-2}$, by electrically gating the TMD using an ionic liquid. We show strong electro-refractive response in monolayer tungsten disulphide (WS$_2$) at NIR wavelengths by measuring a large change in the real part of refractive index $Δ$n = $0.53$, with only a minimal change in the imaginary part $Δ$k = $0.004$. The doping induced phase change ($Δ$n), compared to the induced absorption ($Δ$k) measured for WS$_2$ ($Δ$n/$Δ$k $\sim 125$), a key metric for photonics, is an order of magnitude higher than the $Δ$n/$Δ$k for bulk materials like silicon ($Δ$n/$Δ$k $\sim 10$), making it ideal for various photonic applications. We further utilize this strong tunable effect to demonstrate an electrostatically gated SiN-WS$_2$ phase modulator using a WS$_2$-HfO$_2$ (Hafnia)-ITO (Indium Tin Oxide) capacitive configuration, that achieves a phase modulation efficiency (V$_π$L) of 0.8 V $\cdot$ cm with a RC limited bandwidth of 0.3 GHz.

preprint2018arXiv

A Reconfigurable Nanophotonics Platform for Sub-Millisecond, Deep Brain Neural Stimulation

Nanophotonics provides the ability to rapidly and precisely reconfigure light beams on a compact platform. Infrared nanophotonic devices are widely used in data communications to overcome traditional bandwidth limitations of electrical interconnects. Nanophotonic devices also hold promise for use in biological applications that require visible light, but this has remained technically elusive due to the challenges of reconfiguring and guiding light at these smaller dimensions. In neuroscience, for example, there is a need for implantable optical devices to optogenetically stimulate neurons across deep brain regions with the speed and precision matching state-of-the-art recording probes. Here we demonstrate the first platform for reconfigurable nanophotonic devices in the visible wavelength range and show its application in vivo in the brain. We demonstrate an implantable probe endowed with the ability to rapidly switch and route multiple optical beams using a nanoscale switching network. Each switch consists of a silicon nitride waveguide structure that can be reconfigured by electrically tuning the phase of light and is designed for robustness to fabrication variation, enabling scalable devices. By implanting our probe in mouse visual cortex, we demonstrate in vivo the ability to stimulate identified sets of neurons across layers to produce multi-neuron spike patterns and record them simultaneously with sub-millisecond temporal precision. This nanophotonic platform can be scaled up and integrated with high-density neural recording technologies, opening the door to implantable probe technologies that are able to simultaneously record and stimulate the activity of large neural populations at distant regions of the brain with sub-millisecond precision. We expect this platform will enable researchers to gain a deeper understanding into the spatio-temporal precision of the neural code.

preprint2016arXiv

Modelocked mid-infrared frequency combs in a silicon microresonator

Mid-infrared (mid-IR) frequency combs have broad applications in molecular spectroscopy and chemical/biological sensing. Recently developed microresonator-based combs in this wavelength regime could enable portable and robust devices using a single-frequency pump field. Here, we report the first demonstration of a modelocked microresonator-based frequency comb in the mid-IR spanning 2.4 μm to 4.3 μm. We observe high pump-to-comb conversion efficiency, in which 40% of the pump power is converted to the output comb power. Utilizing an integrated PIN structure allows for tuning the silicon microresonator and controling modelocking and cavity soliton formation, simplifying the generation, monitoring and stabilization of mid-IR frequency combs via free-carrier detection and control. Our results significantly advance microresonator-based comb technology towards a portable and robust mid-IR spectroscopic device that operates at low pump powers.

preprint2016arXiv

Raman-assisted coherent, mid-infrared frequency combs in silicon microresonators

We demonstrate the first low-noise mid-IR frequency comb source using a silicon microresonator. Our observation of strong Raman scattering lines in the generated comb suggests that Raman and four-wave mixing interactions play a role in assisting the transition to the low-noise state. In addition, we characterize, the intracavity comb generation dynamics using an integrated PIN diode, which takes advantage of the inherent three-photon absorption process in silicon.

preprint2016arXiv

Thermally Controlled Comb Generation and Soliton Modelocking in Microresonators

We report the first demonstration of thermally controlled soliton modelocked frequency comb generation in microresonators. By controlling the electric current through heaters integrated with silicon nitride microresonators, we demonstrate a systematic and repeatable pathway to single- and multi-soliton modelocked states without adjusting the pump laser wavelength. Such an approach could greatly simplify the generation of modelocked frequency combs and facilitate applications such as chip-based dual-comb spectroscopy.

preprint2015arXiv

All-optical signal processing platforms for CMOS compatible integrated nonlinear optics

Nonlinear photonic chips have enabled the generation and processing of signals using only light, with performance far superior to that possible electronically - particularly with respect to speed. Although silicon-on-insulator has been the leading platform for nonlinear optics, its high two-photon absorption at telecommunications wavelengths poses a fundamental limitation. We review recent progress in non-silicon CMOS-compatible platforms for nonlinear optics, with a focus on Si3N4 and Hydex. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation and ultrafast optical pulse generation and measurement. This review highlights their potential impact as well as the challenges to achieving practical solutions for many key applications.

preprint2015arXiv

Integrated switch for simultaneous mode-division multiplexing (MDM) and wavelength-division multiplexing (WDM)

Leveraging the spatial modes of multimode waveguides using mode-division multiplexing (MDM) on an integrated photonic chip allows unprecedented scaling of bandwidth density for on-chip communication. Switching channels between waveguides is critical for future scalable optical networks, but its implementation in multimode waveguides must address how to simultaneously control modes with vastly different optical properties. Here we present a platform for switching signals between multimode waveguides based on individually processing the spatial mode channels using single-mode elements. Using this wavelength-division multiplexing (WDM) compatible platform, we demonstrate a 1x2 multimode switch for a silicon chip which routes four data channels with low (<-20 dB) crosstalk. We show bit-error rates below 10^-9 and power penalties below 1.4 dB on all channels while routing 10 Gbps data when each channel is input and routed separately. The switch exhibits an additional power penalty of less than 2.4 dB when all four channels are simultaneously routed.

preprint2015arXiv

Near-field radiative heat transfer between nanostructures in the deep sub-wavelength regime

Radiative heat transfer between parallel objects separated by deep sub-wavelength distances and subject to large thermal gradients (>100 K) could enable breakthrough technologies for electricity generation and thermal transport control. However, thermal transport in this regime has never been achieved experimentally due to the difficulty of maintaining large thermal gradients over nm-scale distances while avoiding other heat transfer mechanism such as conduction. Previous experimental measurement between parallel planes were limited to distances greater than 500 nm (with a 20 K thermal gradient), which is much larger than the theoretically predicted distance (<100 nm) required for most applications. Here we show near-field radiative heat transfer between parallel nanostructures in the deep sub-wavelength regime using high precision micro electromechanical (MEMS) displacement control. We also exploit the high mechanical stability of structures under high tensile stress to minimize thermal buckling effects and maintain small separations at large thermal gradients. We achieve an enhancement of heat transfer of almost two orders of magnitude relative to the far-field limit, which corresponds to a 54 nm separation. We also achieve a high temperature gradient (260 K) between the cold and hot surfaces while maintaining a ~100 nm distance.

preprint2015arXiv

On-Chip Optical Squeezing

We present the first demonstration of all-optical squeezing in an on-chip monolithically integrated CMOS-compatible platform. Our device consists of a low loss silicon nitride microring optical parametric oscillator (OPO) with a gigahertz cavity linewidth. We measure 1.7 dB (5 dB corrected for losses) of sub-shot noise quantum correlations between bright twin beams generated in the microring four-wave-mixing OPO pumped above threshold. This experiment demonstrates a compact, robust, and scalable platform for quantum optics and quantum information experiments on-chip.

preprint2015arXiv

Silicon-Nitride Platform for Narrowband Entangled Photon Generation

CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising for a wide range of integrated quantum photonics applications.

preprint2015arXiv

Synchronization and Phase Noise Reduction in Micromechanical Oscillators Arrays Coupled through Light

Synchronization of many coupled oscillators is widely found in nature and has the potential to revolutionize timing technologies. Here we demonstrate synchronization in arrays of silicon nitride micromechanical oscillators coupled purely through optical radiation field. We show that the phase noise of the synchronized oscillators can be improved by almost 10 dB below the phase noise limit for each individual oscillator. These results open a practical route towards synchronized oscillator networks.

preprint2015arXiv

Tunable frequency combs based on dual microring resonators

In order to achieve efficient parametric frequency comb generation in microresonators, external control of coupling between the cavity and the bus waveguide is necessary. However, for passive monolithically integrated structures, the coupling gap is fixed and cannot be externally controlled, making tuning the coupling inherently challenging. We design a dual-cavity coupled microresonator structure in which tuning one ring resonance frequency induces a change in the overall cavity coupling condition. We demonstrate wide extinction tunability with high efficiency by engineering the ring coupling conditions. Additionally, we note a distinct dispersion tunability resulting from coupling two cavities of slightly different path lengths, and present a new method of modal dispersion engineering. Our fabricated devices consist of two coupled high quality factor silicon nitride microresonators, where the extinction ratio of the resonances can be controlled using integrated microheaters. Using this extinction tunability, we optimize comb generation efficiency as well as provide tunability for avoiding higher-order mode-crossings, known for degrading comb generation. The device is able to provide a 110-fold improvement in the comb generation efficiency. Finally, we demonstrate open eye diagrams using low-noise phase-locked comb lines as a wavelength-division multiplexing channel.

preprint2015arXiv

Tunable Squeezing Using Coupled Ring Resonators on a Silicon Nitride Chip

We demonstrate continuous tuning of the squeezing level generated in a double-ring optical parametric oscillator by externally controlling the coupling condition using electrically controlled integrated microheaters. We accomplish this by utilizing the avoided crossing exhibited by a pair of coupled silicon nitride microring resonators. We directly detect a change in the squeezing level from 0.5 dB in the undercoupled regime to 2 dB in the overcoupled regime, which corresponds to a change in the generated on-chip squeezing factor from 0.9 dB to 3.9 dB. Such wide tunability in the squeezing level can be harnessed for on-chip quantum enhanced sensing protocols which require an optimal degree of squeezing.

preprint2014arXiv

30 GHz Zeno-based Graphene Electro-optic Modulator

Graphene has generated exceptional interest as an optoelectronic material because its high carrier mobility and broadband absorption promise to make extremely fast and broadband electro-optic devices possible. Electro-optic graphene modulators reported to date, however, have been limited in bandwidth to a few GHz because of the large capacitance required to achieve reasonable voltage swings. Here we demonstrate a graphene electro-optic modulator based on the classical Zeno effect that shows drastically increased speed and efficiency. Our device operates with a 30 GHz bandwidth, over an order of magnitude faster than prior work, and a state-of-the-art modulation efficiency of 1.5 dB/V. We also show the first high-speed large-signal operation in a graphene modulator, paving the way for fast digital communications using this platform. The modulator uniquely uses silicon nitride waveguides, an otherwise completely passive material platform, with promising applications for ultra-low-loss broadband structures and nonlinear optics.

preprint2014arXiv

Eliminating Structural Loss in Optomechanical Resonators Using Elastic Wave Interference

Optomechanical resonators suffer from the dissipation of mechanical energy through the necessary anchors enabling the suspension of the structure. Here we show that such structural loss in an optomechnaical oscillator can be almost completely eliminated through the destructive interference of elastic waves using dual-disk resonators. We also present both analytical and numerical model that predicts the observed interference of elastic waves. Our experimental data reveal unstressed SiN devices with mechanical Q-factors up to $10^4$ at mechanical frequencies of $f=102$ MHz ($fQ = 10^{12}$) at room temperature.

preprint2014arXiv

Master-Slave Locking of Optomechanical Oscillators Over A Long Distance

Frequency-locking and other phenomena emerging from nonlinear interactions between mechanical oscillators are of scientific and technological importance. However, existing schemes to observe such behaviour are not scalable over distance. We demonstrate a scheme to couple two independent mechanical oscillators, separated in frequency by 80kHz and situated far from each other (3.2km), via light. Using light as the coupling medium enables this scheme to have low loss and be extended over long distances. This scheme is reversible and can be generalised for arbitrary network configurations.

preprint2014arXiv

Scalable integration of long-lived quantum memories into a photonic circuit

We demonstrate a photonic circuit with integrated long-lived quantum memories. Pre-selected quantum nodes - diamond micro-waveguides containing single, stable, and negatively charged nitrogen vacancy centers - are deterministically integrated into low-loss silicon nitride waveguides. Each quantum memory node efficiently couples into the single-mode waveguide (> 1 Mcps collected into the waveguide) and exhibits long spin coherence times of up to 120 μs. Our system facilitates the assembly of multiple quantum memories into a photonic integrated circuit with near unity yield, paving the way towards scalable quantum information processing.

preprint2014arXiv

Silicon-Chip Mid-Infrared Frequency Comb Generation

Optical frequency combs represent a revolutionary technology for high precision spectroscopy due to their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared (IR) spectral region (2-20 um) is of great interest due to the presence of a large number of gas absorption lines in this wavelength regime. Recently, frequency combs have been demonstrated in the MIR in several platforms, including fiber combs, mode-locked lasers, optical parametric oscillators, and quantum cascade lasers. However, these platforms are either relatively bulky or challenging to integrate on-chip. An alternative approach using parametric mixing in microresonators is highly promising since the platform is extremely compact and can operate with relatively low powers. However, material and dispersion engineering limitations have prevented the realization of a microresonator comb source past 2.55 um. Although silicon could in principle provide a CMOS compatible platform for on-chip comb generation deep into the mid-IR, to date, silicon's linear and nonlinear losses have prevented the realization of a microresonator-based comb source. Here we overcome these limitations and realize a broadband frequency comb spanning from 2.1 um to 3.5 um and demonstrate its viability as a spectroscopic sensing platform. Such a platform is compact and robust and offers the potential to be versatile and durable for use outside the laboratory environment for applications such as real-time monitoring of atmospheric gas conditions.

preprint2014arXiv

Strong polarization mode coupling in microresonators

We observe strong modal coupling between the TE00 and TM00 modes in Si3N4 ring resonators revealed by avoided crossings of the corresponding resonances. Such couplings result in significant shifts of the resonance frequencies over a wide range around the crossing points. This leads to an effective dispersion that is one order of magnitude larger than the intrinsic dispersion and creates broad windows of anomalous dispersion. We also observe the changes to frequency comb spectra generated in Si3N4 microresonators due polarization mode and higher-order mode crossings and suggest approaches to avoid these effects. Alternatively, such polarization mode-crossings can be used as a novel tool for dispersion engineering in microresonators.

preprint2014arXiv

Waveguide-based single-shot temporal cross-correlator

We describe a novel technique for performing a single-shot optical cross-correlation in nanowaveguides. Our scheme is based on four-wave mixing between two orthogonally polarized input signals propagating with different velocities due to polarization mode dispersion. The cross-correlation is determined by measuring the spectrum of the idler wave generated by the four-wave mixing process.

preprint2013arXiv

Deposited low temperature silicon GHz modulator

The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This discrepancy is a result of silicon photonics's requirement for a single-crystalline silicon (c-Si) layer and a thick undercladding for optical guiding that bulk silicon wafers to not provide. While the undercladding problem can be partially addressed by substrate removal techniques, the complexity of co-integrating photonics with state-of-the-art transistors and real estate competition between electronics and photonics remain problematic. We show here a platform for deposited GHz silicon photonics based on polycrystalline silicon with high optical quality suitable for high performance electro-optic devices. We demonstrate 3 Gbps polysilicon electro-optic modulator fabricated on a deposited polysilicon layer fully compatible with CMOS backend integration. These results open up an array of possibilities for silicon photonics including photonics on DRAM and flexible substrates.

preprint2013arXiv

Microresonator-Based Comb Generation without an External Laser Source

Recent developments demonstrate that parametric four-wave mixing (FWM) in high-Q microresonators is a highly promising and effective approach for optical frequency comb generation, with applications including spectroscopy, optical clocks, arbitrary waveform generation, frequency metrology, and astronomical spectrograph calibration. Each of these microresonator platforms utilizes a scheme in which the system is pumped by a single-frequency laser at a cavity resonance. This scheme requires tuning of the pump wavelength into resonance and the generated comb is susceptible to fluctuations in pump power or frequency which can disrupt the soft thermal lock and comb generation. We demonstrate a novel fiber-microresonator dual-cavity architecture that preferentially oscillates at modes of the microresonator due to its high density of states and generates robust and broadband combs (> 900 nm) without an external pump laser. Such a scheme could greatly simplify the comb generation process and allow for a fully-integrated chip-scale source with an on-chip amplifier.

preprint2013arXiv

Observation of an Effective Magnetic field for Light

Photons are neutral particles that do not interact directly with a magnetic field. However, recent theoretical work has shown that an effective magnetic field for photons can exist if the phase of light would change with its propagating direction. This direction-dependent phase indicates the presence of an effective magnetic field as shown for electrons experimentally in the Aharonov-Bohm experiment. Here we replicate this experiment using photons. In order to create this effective magnetic field, we construct an on-chip silicon-based Ramsey-type interferometer. This interferometer has been traditionally used to probe the phase of atomic states, and here we apply it to probe the phase of photonic states. We experimentally observe a phase change, i.e. an effective magnetic field flux from 0 to 2pi. In an Aharonov-Bohm configuration for electrons, considering the device geometry, this flux corresponds to an effective magnetic field of 0.2 Gauss.

preprint2013arXiv

Overcoming Si3N4 film stress limitations for High Quality factor ring resonators

Silicon nitride (Si3N4) ring resonators are critical for a variety of photonic devices. However the intrinsically high film stress of silicon nitride has limited both the optical confinement and quality factor (Q) of ring resonators. We show that stress in Si3N4 films can be overcome by introducing mechanical trenches for isolating photonic devices from propagating cracks. We demonstrate a Si3N4 ring resonator with an intrinsic quality factor of 7 million, corresponding to a propagation loss of 4.2 dB/m. This is the highest quality factor reported to date for high confinement Si3N4 ring resonators in the 1550 nm wavelength range.

preprint2013arXiv

Simultaneous Mode and Wavelength Division Multiplexing On-Chip

Significant effort in optical-fiber research has been put in recent years into realizing mode-division multiplexing (MDM) in conjunction with wavelength-division multiplexing (WDM) to enable further scaling of the communication bandwidth per fiber. In contrast almost all integrated photonics operate exclusively in the single-mode regime. MDM is rarely considered for integrated photonics due to the difficulty in coupling selectively to high-order modes which usually results in high inter-modal crosstalk. Here we show the first demonstration of simultaneous on-chip mode and wavelength division multiplexing with low modal crosstalk and loss. Our approach can potentially increase the aggregate data rate by many times for on-chip ultra-high bandwidth communications.

preprint2013arXiv

Transformation Inverse Design

We present a new technique for the design of transformation-optics devices based on large-scale optimization to achieve the optimal effective isotropic dielectric materials within prescribed index bounds, which is computationally cheap because transformation optics circumvents the need to solve Maxwell's equations at each step. We apply this technique to the design of multimode waveguide bends (realized experimentally in a previous paper) and mode squeezers, in which all modes are transported equally without scattering. In addition to the optimization, a key point is the identification of the correct boundary conditions to ensure reflectionless coupling to untransformed regions while allowing maximum flexibility in the optimization. Many previous authors in transformation optics used a certain kind of quasiconformal map which overconstrained the problem by requiring that the entire boundary shape be specified a priori while at the same time underconstraining the problem by employing "slipping" boundary conditions that permit unwanted interface reflections.

preprint2012arXiv

Device Considerations for Nanophotonic CMOS Global Interconnects

We introduce an analytical framework to understand the path for scaling nanophotonic interconnects to meet the energy and footprint requirements of CMOS global interconnects. We derive the device requirements for sub 100 fJ/cm/bit interconnects including tuning power, serialization-deserialization energy, optical insertion losses, extinction ratio and bit error rates. Using CMOS with integrated nanophotonics as an example platform, we derive the energy/bit, linear and areal bandwidth density of optical interconnects. We also derive the targets for device performance which indicate the need for continued improvements in insertion losses (<8dB), laser efficiency, operational speeds (>40 Gb/s), tuning power (<100 μW/nm), serialization-deserialization (< 10 fJ/bit/Operation) and necessity for spectrally selective devices with wavelength multiplexing (> 6 channels).

preprint2012arXiv

Modelocking and Femtosecond Pulse Generation in Chip-Based Frequency Combs

Development of ultrashort pulse sources has had an immense impact on condensed-matter physics, biomedical imaging, high-field physics, frequency metrology, telecommunications, nonlinear optics, and molecular spectroscopy. Although numerous advancements of such sources have been made, it remains a challenge to create a highly compact, robust platform capable of producing femtosecond pulses over a wide range of wavelengths, durations, and repetition rates. Recent observations of frequency comb generation via cascaded parametric oscillation in microresonators11 suggest a path for achieving this goal. Here we investigate the temporal and spectral properties of parametric combs generated in silicon-nitride microresonators and observe a transition to passive modelocking of the comb consistent with soliton-pulse formation, resulting in the generation of 160-fs pulses at a 99-GHz repetition rate. This platform offers the prospect of producing pulses from 10 fs to a few ps at repetition rates from 10 GHz to > 1 THz and over a wavelength range of 0.8 - 6 μm.

preprint2012arXiv

Perfect imaging in the optical domain using dielectric materials

The promise of perfect imaging in the optical domain, where light can be imaged without aberrations and with ultra-high resolution, could revolutionize technology and nanofabrication [1, 2, 3, 4, 5, 6]. Recently it has been shown theoretically that perfect imaging can be achieved in a dielectric medium with spatially varying refractive index [7, 8]. The lens geometry is defined using transformation optics [9, 10, 11, 12, 13, 14, 15] for projecting a spherical space onto a real plane space, forming Maxwells fish eye [16, 17, 18, 19]. Most transformation optics demonstrations have been achieved for Euclidean spaces and in the microwave regime, due to ease of fabrication. Here we demonstrate a transformation to a non-Euclidean space [20] in the optical regime using silicon nanophotonic structures.

preprint2012arXiv

Synchronization of Micromechanical Oscillators Using Light

Synchronization, the emergence of spontaneous order in coupled systems, is of fundamental importance in both physical and biological systems. We demonstrate the synchronization of two dissimilar silicon nitride micromechanical oscillators, that are spaced apart by a few hundred nanometers and are coupled through optical radiation field. The tunability of the optical coupling between the oscillators enables one to externally control the dynamics and switch between coupled and individual oscillation states. These results pave a path towards reconfigurable massive synchronized oscillator networks.

preprint2011arXiv

A Silicon-Based Monolithic Optical Frequency Comb Source

Recently developed techniques for generating precisely equidistant optical frequencies over broad wavelength ranges are revolutionizing precision physical measurement [1-3]. These frequency "combs" are produced primarily using relatively large, ultrafast laser systems. However, recent research has shown that broad-bandwidth combs can be produced using highly-nonlinear interactions in microresonator optical parametric oscillators [4-11]. Such devices not only offer the potential for developing extremely compact optical atomic clocks but are also promising for astronomical spectroscopy [12-14], ultrashort pulse shaping [15], and ultrahigh-speed communications systems. Here we demonstrate the generation of broad-bandwidth optical frequency combs from a CMOS-compatible integrated microresonator [16,17], which is a fully-monolithic and sealed chip-scale device making it insensitive to the surrounding environment. We characterize the comb quality using a novel self-referencing method and verify that the comb line frequencies are equidistant over a bandwidth that is nearly an order of magnitude larger than previous measurements. In addition, we investigate the ultrafast temporal properties of the comb and demonstrate its potential to serve as a chip-scale source of ultrafast (sub-ps) pulses.

preprint2011arXiv

Broadband Tuning of Optomechanical Cavities

We demonstrate broadband tuning of an optomechanical microcavity optical resonance by exploring the large optomechanical coupling of a double-wheel microcavity and its uniquely low mechanical stiffness. Using a pump laser with only 13 mW at telecom wavelengths we show tuning of the silicon nitride microcavity resonances over 32 nm. This corresponds to a tuning power efficiency of only 400 $μ$W/nm. By choosing a relatively low optical Q resonance ($\approx$18,000) we prevent the cavity from reaching the regime of regenerative optomechanical oscillations. The static mechanical displacement induced by optical gradient forces is estimated to be as large as 60 nm.

preprint2011arXiv

Electro-optical silicon isolator

We create a non-magnetic CMOS-compatible optical isolator on a silicon chip. The isolator is based on indirect interband photonic transition, induced by electrically-driven dynamic refractive index modulation. We demonstrate an electrically-induced non-reciprocity: the transmission coefficients between two single-mode waveguides become dependent on the propagation directions only in the presence of the electrical drive. The contrast ratio between forward and backward directions exceeds 30dB in simulations. We experimentally observe a strong contrast (up to 3 dB) limited only by our electrical setup, for a continuous-wave (CW) optical signal. Importantly, the device is linear with respect to signal light. The observed contrast ratio is independent of the timing, the format, the amplitude and the phase of the input signal.

preprint2011arXiv

High-Performance Silicon-Based Multiple Wavelength Source

We demonstrate a stable CMOS-compatible on-chip multiple-wavelength source by filtering and modulating individual lines from a frequency comb generated by a microring resonator optical parametric oscillator.. We show comb operation in a low-noise state that is stable and usable for many hours. Bit-error rate measurements demonstrate negligible power penalty from six independent frequencies when compared to a tunable diode laser baseline. Open eye diagrams confirm the fidelity of the 10 Gb/s data transmitted at the comb frequencies and the suitability of this device for use as a fully integrated silicon-based WDM source.

preprint2011arXiv

Octave-spanning frequency comb generation in a silicon nitride chip

We demonstrate a frequency comb spanning an octave via the parametric process of cascaded four-wave mixing in a monolithic, high-Q silicon nitride microring resonator. The comb is generated from a single-frequency pump laser at 1562 nm and spans 128 THz with a spacing of 226 GHz, which can be tuned slightly with the pump power. In addition, we investigate the RF-noise characteristics of the parametric comb and find that the comb can operate in a low-noise state with a 30-dB reduction in noise as the pump frequency is tuned into the cavity resonance.

preprint2010arXiv

Direction-dependent Optical Modes in Nanoscale Silicon Waveguides

On-chip photonic networks have the potential to transmit and route information more efficiently than electronic circuits. Recently, a number of silicon-based optical devices including modulators, buffers, and wavelength converts have been reported. However, a number of technical challenges need to be overcome before these devices can be combined into network-level architectures. In particular, due to the high refractive index contrast between the core and cladding of semiconductor waveguides, nanoscale defects along the waveguide often scatter light into the backward-propagating mode. These reflections could result in unwanted feedback to optical sources or crosstalk in bidirectional interconnects such as those employed in fiber-optic networks. It is often assumed that these reflected waves spatially overlap the forward-propagating waves making it difficult to implement optical circulators or isolators which separate or attenuate light based on its propagation direction. Here, we individually identify and map the near-field mode profiles of forward-propagating and reflected light in a single-mode silicon waveguide using Transmission-based near-field scanning optical microscopy (TraNSOM). We show that unlike fiber-optic waveguides, the high-index-contrast and nanoscale dimensions of semiconductor waveguides create counter propagating waves with distinct spatial near-field profiles. These near-field differences are a previously-unobserved consequence of nanoscale light confinement and could provide a basis for novel elements to filter forward-propagating from reflected light.

preprint2010arXiv

Second-Harmonic Generation in Silicon Nitride Ring Resonators

The emerging field of silicon photonics seeks to unify the high bandwidth of optical communications with CMOS microelectronic circuits. Many components have been demonstrated for on-chip optical communications, including those that utilize the nonlinear optical properties of silicon[1, 2], silicon dioxide[3, 4] and silicon nitride[5, 6]. Processes such as second harmonic generation, which are enabled by the second-order susceptibility, have not been developed since the bulk $χ^{(2)}$ vanishes in these centrosymmetric CMOS materials. Generating the lowest-order nonlinearity would open the window to a new array of CMOS-compatible optical devices capable of nonlinear functionalities not achievable with the?$χ^{(3)}$ response such as electro-optic modulation, sum frequency up-conversion, and difference frequency generation. Here we demonstrate second harmonic (SH) generation in CMOS compatible integrated silicon nitride (Si3N4) waveguides. The $χ^{(2)}$ response is induced in the centrosymmetric material by using the nanoscale structure to break the bulk symmetry. We use a high quality factor Q ring resonator cavity to enhance the efficiency of the nonlinear optical process and detect SH output with milliwatt input powers.

preprint2009arXiv

CMOS compatible athermal silicon microring resonators

Silicon photonics promises to alleviate the bandwidth bottleneck of modern day computing systems. But silicon photonic devices have the fundamental problem of being highly sensitive to ambient temperature fluctuations due to the high thermo-optic (TO) coefficient of silicon. Most of the approaches proposed to date to overcome this problem either require significant power consumption or incorporate materials which are not CMOS-compatible. Here we demonstrate a new class of optical devices which are passively temperature compensated, based on tailoring the optical mode confinement in silicon waveguides. We demonstrate the operation of a silicon photonic resonator over very wide temperature range of greater than 80 degrees. The fundamental principle behind this work can be extended to other photonic structures such as modulators, routers, switches and filters.

preprint2009arXiv

Integrated GHz silicon photonic interconnect with micrometer-scale modulators and detectors

We report an optical link on silicon using micrometer-scale ring-resonator enhanced silicon modulators and waveguide-integrated germanium photodetectors. We show 3 Gbps operation of the link with 0.5 V modulator voltage swing and 1.0 V detector bias. The total energy consumption for such a link is estimated to be ~120 fJ/bit. Such compact and low power monolithic link is an essential step towards large-scale on-chip optical interconnects for future microprocessors.