Researcher profile

Michal Lipson

Michal Lipson contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
12works
0followers
5topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

12 published item(s)

preprint2023arXiv

Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries

The fabrication processes of silicon nitride photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, we show that propagation loss as low as 0.42 dB/cm can be achieved using foundry compatible processes by solely reducing waveguide surface roughness. By post-processing the fabricated devices using rapid thermal anneal (RTA) and furnace anneal, we achieve propagation losses down to 0.28 dB/cm and 0.06 dB/cm, respectively. These low losses are comparable to the conventional devices using high temperature, high-stress low-pressure chemical vapor deposition (LPCVD) films. We also tune the dispersion of the devices, and proved that these devices can be used for linear and nonlinear applications. Low threshold parametric oscillation, broadband frequency combs and narrow-linewidth laser are demonstrated. Our work demonstrates the feasibility of scalable photonic systems based on foundries.

preprint2022arXiv

Fabrication-Robust Silicon Photonic Devices in Standard Sub-Micron Silicon-on-Insulator Processes

Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such variations are particularly troublesome for phase-sensitive devices such as interferometers and resonators, which exhibit drastic changes in performance as a result of these fabrication-induced phase errors. In this Letter, we propose and experimentally demonstrate a design methodology for dramatically reducing device sensitivity to silicon width variations. We apply this methodology to a highly phase-sensitive device, the ring-assisted Mach Zehnder interferometer (RAMZI), and show comparable performance and footprint to state-of-the-art devices while substantially reducing stochastic phase errors from etch variations. This decrease in sensitivity is directly realized as energy savings by significantly lowering the required corrective thermal tuning power, providing a promising path towards ultra-energy-efficient large-scale silicon photonic circuits.

preprint2022arXiv

High Power on-chip Integrated Laser

The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high power is the low energy efficiency at high pumping currents, dictated by the small size of the active device. Here we break this power limitation by demonstrating a platform that relies on the coupling of a broad-area multimode gain to a silicon-nitride feedback chip, which acts as an external cavity. The feedback provided by the silicon-nitride chip is routed through a ring resonator and a single-mode filter, thus causing the otherwise multimode-gain chip to concentrate its power into a single highly-coherent mode. Our device produces more than 150 mW of power and 400 kHz linewidth. We achieve these high-performance metrics while maintaining a small footprint of 3 mm^2.

preprint2022arXiv

Measurements and modeling of atomic-scale sidewall roughness and losses in integrated photonic devices

Atomic-level imperfections play an increasingly critical role in nanophotonic device performance. However, it remains challenging to accurately characterize the sidewall roughness with sub-nanometer resolution and directly correlate this roughness with device performance. We have developed a method that allows us to measure the sidewall roughness of waveguides made of any material (including dielectrics) using the high resolution of atomic force microscopy. We illustrate this method by measuring state-of-the-art photonic devices made of silicon nitride. We compare the roughness of devices fabricated using both DUV photo-lithography and electron-beam lithography for two different etch processes. To correlate roughness with device performance we describe what we call a new Payne-Lacey Bending model, which adds a correction factor to the widely used Payne-Lacey model so that losses in resonators and waveguides with bends can be accurately predicted given the sidewall roughness, waveguide width and bending radii. Having a better way to measure roughness and use it to predict device performance can allow researchers and engineers to optimize fabrication for state-of-the-art photonics using many materials.

preprint2020arXiv

Broadband Ultrahigh-Resolution chip-scale Scanning Soliton Dual-Comb Spectroscopy

We present a chip-scale scanning dual-comb spectroscopy (SDCS) approach for broadband ultrahigh-resolution spectral acquisition. SDCS uses Si3N4 microring resonators that generate two single soliton micro-combs spanning 37 THz (300 nm) on the same chip from a single 1550-nm laser, forming a high-mutual-coherence dual-comb. We realize continuous tuning of the dual-comb system over the entire optical span of 37.5 THz with high precision using integrated microheater-based wavelength trackers. This continuous wavelength tuning is enabled by simultaneous tuning of the laser frequency and the two single soliton micro-combs over a full free spectral range of the microrings. We measure the SDCS resolution to be 319+-4.6 kHz. Using this SDCS system, we perform the molecular absorption spectroscopy of H13C14N over its 2.3 THz (18 nm)-wide overtone band, and show that the massively parallel heterodyning offered by the dual-comb expands the effective spectroscopic tuning speed of the laser by one order of magnitude. Our chip-scale SDCS opens the door to broadband spectrometry and massively parallel sensing with ultrahigh spectral resolution.

preprint2020arXiv

Frequency-Domain Quantum Interference with Correlated Photons from an Integrated Microresonator

Frequency encoding of quantum information together with fiber and integrated photonic technologies can significantly reduce the complexity and resource requirements for realizing all-photonic quantum networks. The key challenge for such frequency domain processing of single photons is to realize coherent and selective interactions between quantum optical fields of different frequencies over a range of bandwidths. Here, we report frequency-domain Hong-Ou-Mandel interference with spectrally distinct photons generated from a chip-based microresonator. We use four-wave mixing to implement an active frequency beam-splitter and achieve interference visibilities of $0.95 \pm 0.02$. Our work establishes four-wave mixing as a tool for selective high-fidelity two-photon operations in the frequency domain which, combined with integrated single-photon sources, provides a building block for frequency-multiplexed photonic quantum networks.

preprint2020arXiv

Nanophotonic spin-glass for realization of a coherent Ising machine

The need for solving optimization problems is prevalent in a wide range of physical applications, including neuroscience, network design, biological systems, socio-economics, and chemical reactions. Many of these are classified as non-deterministic polynomial-time (NP) hard and thus become intractable to solve as the system scales to a large number of elements. Recent research advances in photonics have sparked interest in using a network of coupled degenerate optical parametric oscillators (DOPO's) to effectively find the ground state of the Ising Hamiltonian, which can be used to solve other combinatorial optimization problems through polynomial-time mapping. Here, using the nanophotonic silicon-nitride platform, we propose a network of on-chip spatial-multiplexed DOPO's for the realization of a photonic coherent Ising machine. We demonstrate the generation and coupling of two microresonator-based DOPO's on a single chip. Through a reconfigurable phase link, we achieve both in-phase and out-of-phase operation, which can be deterministically achieved at a fast regeneration speed of 400 kHz with a large phase tolerance. Our work provides the critical building blocks towards the realization of a chip-scale photonic Ising machine.

preprint2020arXiv

Near-degenerate quadrature-squeezed vacuum generation on a silicon-nitride chip

Squeezed states are a primary resource for continuous-variable (CV) quantum information processing. To implement CV protocols in a scalable and robust way, it is desirable to generate and manipulate squeezed states using an integrated photonics platform. In this Letter, we demonstrate the generation of quadrature-phase squeezed states in the radio-frequency carrier sideband using a small-footprint silicon-nitride microresonator with a dual-pumped four-wave-mixing process. We record a squeezed noise level of 1.34 dB ($\pm$0.16 dB) below the photocurrent shot noise, which corresponds to 3.09 dB ($\pm$0.49 dB) of quadrature squeezing on chip. We also show that it is critical to account for the nonlinear behavior of the pump fields to properly predict the squeezing that can be generated in this system. This technology represents a significant step toward creating and manipulating large-scale CV cluster states that can be used for quantum information applications including universal quantum computing.

preprint2020arXiv

Visible nonlinear photonics via high-order-mode dispersion engineering

Over the past decade, remarkable advances have been realized in chip-based nonlinear photonic devices for classical and quantum applications in the near- and mid-infrared regimes. However, few demonstrations have been realized in the visible and near-visible regimes, primarily due to the large normal material group-velocity dispersion (GVD) that makes it challenging to phase match third-order parametric processes. In this paper, we show that exploiting dispersion engineering of higher-order waveguide modes provides waveguide dispersion that allows for small or anomalous GVD in the visible and near-visible regimes and phase matching of four-wave mixing processes. We illustrate the power of this concept by demonstrating in silicon nitride microresonators a near-visible modelocked Kerr frequency comb and a narrow-band photon-pair source compatible with Rb transitions. These realizations extend applications of nonlinear photonics towards the visible and near-visible regimes for applications in time and frequency metrology, spectral calibration, quantum information, and biomedical applications.

preprint2019arXiv

Integrated near-field thermo-photovoltaics for on-demand heat recycling

The energy transferred via thermal radiation between two surfaces separated by nanometers distances (near-field) can be much larger than the blackbody limit. However, realizing a reconfigurable platform that utilizes this energy exchange mechanism to generate electricity in industrial and space applications on-demand, remains a challenge. The challenge lies in designing a platform that can separate two surfaces by a small and tunable gap while simultaneously maintaining a large temperature differential. Here, we present a fully integrated, reconfigurable and scalable platform operating in near-field regime that performs controlled heat extraction and energy recycling. Our platform relies on an integrated nano-electromechanical system (NEMS) that enables precise positioning of a large area thermal emitter within nanometers distances from a room-temperature germanium photodetector to form a thermo-photovoltaic (TPV) cell. We show over an order of magnitude higher power generation $\mathrm{P_{gen} \sim 1.25 \, μW \cdot cm^{-2}}$ from our TPV cell by tuning the gap between a hot emitter ($\mathrm{T_E \sim 880 \, K}$) and the cold photodetector ($\mathrm{T_D \sim 300 \, K}$) from $\mathrm{\sim 500 \, nm}$ to $\mathrm{\sim 100 \, nm}$. The significant enhancement in $\mathrm{P_{gen}}$ at such small distances is a clear indication of near-field heat transfer effect. Our electrostatically controlled NEMS switch consumes negligible tuning power ($\mathrm{P_{gen}/P_{NEMS} \sim 10^4}$) and relies on conventional silicon-based process technologies.

preprint2019arXiv

Low-loss composite photonic platform based on 2D semiconductor monolayers

Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The optical properties of TMDs have been shown to change drastically with doping in the wavelength range near the excitonic resonances. However, little is known about the effect of doping on the optical properties of TMDs away from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. Here, we probe the electro-optic response of monolayer TMDs at near infrared (NIR) wavelengths (i.e. deep in the transparency regime), by integrating them on silicon nitride (SiN) photonic structures to induce strong light$-$matter interaction with the monolayer. We dope the monolayer to carrier densities of ($7.2 \pm 0.8$) $\times$ $10^{13} \textrm{cm}^{-2}$, by electrically gating the TMD using an ionic liquid. We show strong electro-refractive response in monolayer tungsten disulphide (WS$_2$) at NIR wavelengths by measuring a large change in the real part of refractive index $Δ$n = $0.53$, with only a minimal change in the imaginary part $Δ$k = $0.004$. The doping induced phase change ($Δ$n), compared to the induced absorption ($Δ$k) measured for WS$_2$ ($Δ$n/$Δ$k $\sim 125$), a key metric for photonics, is an order of magnitude higher than the $Δ$n/$Δ$k for bulk materials like silicon ($Δ$n/$Δ$k $\sim 10$), making it ideal for various photonic applications. We further utilize this strong tunable effect to demonstrate an electrostatically gated SiN-WS$_2$ phase modulator using a WS$_2$-HfO$_2$ (Hafnia)-ITO (Indium Tin Oxide) capacitive configuration, that achieves a phase modulation efficiency (V$_π$L) of 0.8 V $\cdot$ cm with a RC limited bandwidth of 0.3 GHz.

preprint2018arXiv

A Reconfigurable Nanophotonics Platform for Sub-Millisecond, Deep Brain Neural Stimulation

Nanophotonics provides the ability to rapidly and precisely reconfigure light beams on a compact platform. Infrared nanophotonic devices are widely used in data communications to overcome traditional bandwidth limitations of electrical interconnects. Nanophotonic devices also hold promise for use in biological applications that require visible light, but this has remained technically elusive due to the challenges of reconfiguring and guiding light at these smaller dimensions. In neuroscience, for example, there is a need for implantable optical devices to optogenetically stimulate neurons across deep brain regions with the speed and precision matching state-of-the-art recording probes. Here we demonstrate the first platform for reconfigurable nanophotonic devices in the visible wavelength range and show its application in vivo in the brain. We demonstrate an implantable probe endowed with the ability to rapidly switch and route multiple optical beams using a nanoscale switching network. Each switch consists of a silicon nitride waveguide structure that can be reconfigured by electrically tuning the phase of light and is designed for robustness to fabrication variation, enabling scalable devices. By implanting our probe in mouse visual cortex, we demonstrate in vivo the ability to stimulate identified sets of neurons across layers to produce multi-neuron spike patterns and record them simultaneously with sub-millisecond temporal precision. This nanophotonic platform can be scaled up and integrated with high-density neural recording technologies, opening the door to implantable probe technologies that are able to simultaneously record and stimulate the activity of large neural populations at distant regions of the brain with sub-millisecond precision. We expect this platform will enable researchers to gain a deeper understanding into the spatio-temporal precision of the neural code.