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Azad Naeemi

Azad Naeemi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallEmerging Technologiesphysics.app-phquant-phcond-mat.mtrl-sciphysics.ed-phphysics.soc-ph

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Published work

10 published item(s)

preprint2022arXiv

Quantum Games and Interactive Tools for Quantum Technologies Outreach and Education

In this article, we provide an extensive overview of a wide range of quantum games and interactive tools that have been employed by the community in recent years. The paper presents selected tools, as described by their developers. The list includes Hello Quantum, Hello Qiskit, Particle in a Box, Psi and Delta, QPlayLearn, Virtual Lab by Quantum Flytrap, Quantum Odyssey, ScienceAtHome, and The Virtual Quantum Optics Laboratory. Additionally, we present events for quantum game development: hackathons, game jams, and semester projects. Furthermore, we discuss the Quantum Technologies Education for Everyone (QUTE4E) pilot project, which illustrates an effective integration of these interactive tools with quantum outreach and education activities. Finally, we aim at providing guidelines for incorporating quantum games and interactive tools in pedagogic materials to make quantum technologies more accessible for a wider population.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits

Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is required. Here we present physics-based device models based on 4x4 matrices for the spin-orbit coupling part of the magneto-electric spin-orbit (MESO) device. Also, a more rigorous physics model of ferroelectric and magnetoelectric switching of ferromagnets, based on Landau-Lifshitz-Gilbert (LLG) and Landau-Khalatnikov (LK) equations, is presented. With the combined model implemented in a SPICE circuit simulator environment, simulation results were obtained which show feasibility of MESO implementation and functional operation of buffers, oscillators, and majority gates.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction

The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental results. The lower limit of the magnetic order response time of CoFe in the BiFeO3/CoFe heterojunction is theoretically quantified to be on to the order of 100 ps. Our results indicate that the switching behavior of CoFe in the BiFeO3/CoFe heterojunction is dominated by the rotation of the Neel vector in BiFeO3 rather than the unidirectional exchange bias at the interface. We also quantify the magnitude of the interface exchange coupling coefficient J_int to be 0.32 pJ/m by comparing our simulation results with the giant magnetoresistance (GMR) curves and the magnetic hysteresis loop in the experiments. To the best of our knowledge, this is the first time that J_int is extracted quantitatively from experiments. Furthermore, we demonstrate that the switching success rate and the thermal stability of the BiFeO3/CoFe heterojunction can be improved by reducing the thickness of CoFe and increasing the length to width aspect ratio of the BiFeO3/CoFe heterojunction. Our theoretical model provides a comprehensive framework to study the magnetoelectric properties and the manipulation of the magnetic order of CoFe in the BiFeO3/CoFe heterojunction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties needed to achieve sub-ns, and ~fJ write operation when integrated with CMOS access transistors. In this paper, a 2T-1MTJ cell-level modeling framework for in-plane type Y SOT-MRAM suggests that high spin Hall conductivity and moderate SOT material sheet resistance are preferred. We benchmark write energy and speed performances of type Y SOT cells based on various SOT materials experimentally reported in the literature, including heavy metals, topological insulators and semimetals. We then carry out detailed benchmarking of SOT material Pt, beta-W, and BixSe(1-x) with different thickness and resistivity. We further discuss how our 2T-1MTJ model can be expanded to analyze other variations of SOT-MRAM, including perpendicular (type Z) and type X SOT-MRAM, two-terminal SOT-MRAM, as well as spin-transfer-torque (STT) and voltage-controlled magnetic anisotropy (VCMA)-assisted SOT-MRAM. This work will provide essential guidelines for SOT-MRAM materials, devices, and circuits research in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Multi-domain Characterization of Ferroelectric Switching Dynamics with a Physics-based SPICE Circuit Model for Phase Field Simulations

In this paper, the multi-domain nature of ferroelectric (FE) polarization switching dynamics in a metal-ferroelectric-metal (MFM) capacitor is explored through a physics-based phase field approach, where the three-dimensional time-dependent Ginzburg-Landau (TDGL) equation and Poisson's equation are self-consistently solved with the SPICE simulator. Systematically calibrated based on the experimental measurements, the model well captures transient negative capacitance in pulse switching dynamics, with domain interaction and viscosity being the key parameters. It is found that the influence of pulse amplitudes on voltage transient behaviors can be attributed to the fact that the FE free energy profile strongly depends on how the domains are interacted. This finding has an important implication on the charge-boost induced by stabilization of negative capacitance in an FE + dielectric (DE) stack since the so-called capacitance matching needs to be designed at a specific operation voltage or frequency. In addition, we extract the domain viscosity dynamics during polarization switching according to the experimental measurements. For the first time, a physics-based circuit-compatible SPICE model for multi-domain phase field simulations is established to reveal the effect of domain interaction on the FE energy profile and microscopic domain evolution.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Simulation of the Magnetization Dynamics of a Single Domain BiFeO$_3$ Thin Film

The switching dynamics of a single-domain BiFeO$_3$ thin films is investigated through combining the dynamics of polarization and Neel vector. The evolution of the ferroelectric polarization is described by the Landau-Khalatnikov (LK) equation, and the Landau-Lifshitz-Gilbert (LLG) equations for spins in two sublattices to model the time evolution of the antiferromagnetic order (Neel vector) in a G-type antiferromagnet. This work theoretically demonstrates that due to the rotation of the magnetic hard axis following the polarization reversal, the Neel vector can be switched by 180 degrees, while the weak magnetization can remain unchanged. The simulation results are consistent with the ab initio calculation, where the Neel vector rotates during polarization rotation, and also match our calculation of the dynamics of order parameter using Landau-Ginzburg theory. We also find that the switching time of the Neel vector is determined by the speed polarization switching and is predicted to be as short as 30 ps.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A Probability-Density Function Approach to Capture the Stochastic Dynamics of the Nanomagnet and Impact on Circuit Performance

In this paper we systematically evaluate the variation in the reversal delay of a nanomagnet driven by a longitudinal spin current while under the influence of thermal noise. We then use the results to evaluate the performance of an All-Spin-Logic (ASL) circuit. First, we review and expand on the physics of previously-published analytical models on stochastic nanomagnet switching. The limits of previously established models are defined and it is shown that these models are valid for nanomagnet reversal times < 200 ps. Second, the insight obtained from previous models allows us to represent the probability density function (PDF) of the nanomagnet switching delay using the double exponential function of the Frechet distribution. The PDF of a single nanomagnet is extended to more complex nanomagnet circuit configurations. It is shown that the delay-variation penalty incurred by nanomagnets arranged in parallel configuration is dwarfed by the average delay increase for nanomagnets arranged in a series configuration. Finally, we demonstrate the impact of device-level performance variation on the circuit behavior using ASL logic gates. While the analysis presented in this paper uses an ASL-AND gate as the prototype switching circuit in the spin domain, the physical concepts are generic and can be extended to any complex spin-based circuit.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A Proposal for Energy-Efficient Cellular Neural Network based on Spintronic Devices

Due to the massive parallel computing capability and outstanding image and signal processing performance, cellular neural network (CNN) is one promising type of non-Boolean computing system that can outperform the traditional digital logic computation and mitigate the physical scaling limit of the conventional CMOS technology. The CNN was originally implemented by VLSI analog technologies with operational amplifiers and operational transconductance amplifiers as neurons and synapses, respectively, which are power and area consuming. In this paper, we propose a hybrid structure to implement the CNN with magnetic components and CMOS peripherals with a complete driving and sensing circuitry. In addition, we propose a digitally programmable magnetic synapse that can achieve both positive and negative values of the templates. After rigorous performance analyses and comparisons, optimal energy is achieved based on various design parameters, including the driving voltage and the CMOS driving size. At a comparable footprint area and operation speed, a spintronic CNN is projected to achieve more than one order of magnitude energy reduction per operation compared to its CMOS counterpart.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low-power Spin Valve Logic using Spin-transfer Torque with Automotion of Domain Walls

A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM) wires served as interconnects, where DW automotion is used to propagate the information from one device to another. The non-reciprocity of both device and interconnect is realized by sizing different contact areas at the input and the output as well as enhancing the local damping mechanism. The proposed logic is suitable for scaling due to a high energy barrier provided by a long FM wire. Compared to the scheme based on non-local spin valves (NLSVs) in the previous proposal, the devices can be operated at lower current density due to utilizing all injected spins for local magnetization reversals, and thus improve both energy efficiency and resistance to electromigration. This device concept is justified by simulating a buffer, an inverter, and a 3-input majority gate with comprehensive numerical simulations, including spin transport through the FM/non-magnetic (NM) interfaces as well as the NM channel and stochastic magnetization dynamics inside FM wires. In addition to digital computing, the proposed framework can also be used as a transducer between DWs and spin currents for higher wiring flexibility in the interconnect network.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Smart Detector Cell: A Scalable All-Spin Circuit for Low Power Non-Boolean Pattern Recognition

We present a new circuit for non-Boolean recognition of binary images. Employing all-spin logic (ASL) devices, we design logic comparators and non-Boolean decision blocks for compact and efficient computation. By manipulation of fan-in number in different stages of the circuit, the structure can be extended for larger training sets or larger images. Operating based on the mainly similarity idea, the system is capable of constructing a mean image and compare it with a separate input image within a short decision time. Taking advantage of the non-volatility of ASL devices, the proposed circuit is capable of hybrid memory/logic operation. Compared with existing CMOS pattern recognition circuits, this work achieves a smaller footprint, lower power consumption, faster decision time and a lower operational voltage. To the best of our knowledge, this is the first fully spin-based complete pattern recognition circuit demonstrated using spintronic devices.

0 citations0 reviewsNo code linkedOpen access