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Researcher profile

S. A. Fedorov

S. A. Fedorov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elphysics.atom-phphysics.optics

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Published work

5 published item(s)

preprint2016arXiv

Improved measurement of the hyperfine structure of the laser cooling level $4f^{12}(^3 H_6)5d_{5/2}6s^2$ $(J=9/2)$ in $^{169}$Tm

We report on the improved measurement of the hyperfine structure of $4f^{12}(^3 H_6)5d_{5/2}6s^2$ $(J=9/2)$ excited state in Tm-169 which is involved in the second-stage laser cooling of Tm. To measure the absolute value of the hyperfine splitting interval we used Doppler-free frequency modulation saturated absorption spectroscopy of Tm atoms in a vapor cell. The sign of the hyperfine constant was determined independently by spectroscopy of laser cooled Tm atoms. The hyperfine constant of the level equals $A_J=-422.112(32)$ MHz that corresponds to the energy difference between two hyperfine sublevels of $-2110.56(16)$~MHz. In relation to the saturated absorption measurement we quantitatively treat contributions of various mechanisms into the line broadening and shift. We consider power broadening in the case when Zeeman sublevels of atomic levels are taken into account. We also discuss the line broadening due to frequency modulation and relative intensities of transitions in saturated-absorption experiments.

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preprint2015arXiv

Conductance of a SET with a retarded dielectric layer in the gate capacitor

We study conductance of a single electron transistor (SET) with a ferroelectric (or dielectric) layer placed in the gate capacitor. We assume that ferroelectric (FE) has a retarded response with arbitrary relaxation time. We show that in the case of "fast" but still retarded response of the FE (dielectric) layer an additional contribution to the Coulomb blockade effect appears leading to the suppression of the SET conductance. We take into account fluctuations of the FE (dielectric) polarization using Monte-Carlo simulations. For "fast" FE these fluctuations partially suppress the additional Coulomb blockade effect. Using Monte-Carlo simulations we study the transition from "fast" to "slow" FE. For high temperatures the peak value of the SET conductance is almost independent of the FE relaxation time. For temperatures close to the FE Curie temperature the conductance peak value non-monotonically depends on the FE relaxation time. A maximum appears when the FE relaxation time is of the order of the SET discharging time. Below the Curie point the conductance peak value decreases with increasing the FE relaxation time. The conductance shows the hysteresis behavior for any FE relaxation time at temperatures below the FE transition point. We show that conductance hysteresis is robust against FE internal fluctuations.

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preprint2015arXiv

Single electron tunneling with "slow" insulators

Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the dielectric layers in the tunnel barriers in the fluctuating electric fields induced by single-electron tunneling events and study transport in the single electron transistor (SET). Here "slow" dielectric implies slow compared to the characteristic time scales of the SET charging-discharging effects. We show that for strong enough polarizability, such that the induced charge on the island is comparable with the elementary charge, the transport properties of the SET substantially deviate from the known results of transport theory of SET. In particular, the coulomb blockade is more pronounced at finite temperature, the conductance peaks change their shape and the current-voltage characteristics show the memory-effect (hysteresis). However, in contrast to SETs with ferroelectric tunnel junctions, here the periodicity of the conductance in the gate voltage is not broken, instead the period strongly depends on the polarizability of the gate-dielectric. We uncover the fine structure of the hysteresis-effect where the "large" hysteresis loop may include a number of "smaller" loops. Also we predict the memory effect in the current-voltage characteristics $I(V)$, with $I(V)\neq -I(-V)$.

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preprint2014arXiv

Interplay of ferroelectricity and single electron tunneling

We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently calculated along with electron hopping probabilities leading to new physical transport phenomena studying in this paper. These phenomena appear mostly due to effective screening of a grain electric field by ferroelectric environment rather than due to polarization dependent tunneling probabilities. At small bias voltages polarization can be switched by a single excess electron in the grain. In this case transport properties of SET exhibit the instability (memory effect).

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preprint2014arXiv

Memory effect in ferroelectric single electron transistor: violation of conductance periodicity in the gate voltage

The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to placing the ferroelectric insulators in the source and drain tunnel junctions. We show that placing the ferroelectric inside the gate capacitance breaks this periodicity. The current-voltage characteristics of this SET strongly depends on the ferroelectric polarization and shows the giant memory-effect even for negligible ferroelectric hysteresis making this device promising for memory applications.

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