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I. S. Beloborodov

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Published work

23 published item(s)

preprint2015arXiv

Competition of magneto-dipole, anisotropy and exchange interactions in composite multiferroics

We study the competition of magneto-dipole, anisotropy and exchange interactions in composite three dimensional multiferroics. Using Monte Carlo simulations we show that magneto-dipole interaction does not suppress the ferromagnetic state caused by the interaction of the ferroelectric matrix and magnetic subsystem. However, the presence of magneto-dipole interaction influences the order-disorder transition: depending on the strength of magneto-dipole interaction the transition from the ferromagnetic to the superparamagnetic state is accompanied either by creation of vortices or domains of opposite magnetization. We show that the temperature hysteresis loop occurs due to non-monotonic behavior of exchange interaction versus temperature. The origin of this hysteresis is related to the presence of stable magnetic domains which are robust against thermal fluctuations.

preprint2015arXiv

Conductance of a SET with a retarded dielectric layer in the gate capacitor

We study conductance of a single electron transistor (SET) with a ferroelectric (or dielectric) layer placed in the gate capacitor. We assume that ferroelectric (FE) has a retarded response with arbitrary relaxation time. We show that in the case of "fast" but still retarded response of the FE (dielectric) layer an additional contribution to the Coulomb blockade effect appears leading to the suppression of the SET conductance. We take into account fluctuations of the FE (dielectric) polarization using Monte-Carlo simulations. For "fast" FE these fluctuations partially suppress the additional Coulomb blockade effect. Using Monte-Carlo simulations we study the transition from "fast" to "slow" FE. For high temperatures the peak value of the SET conductance is almost independent of the FE relaxation time. For temperatures close to the FE Curie temperature the conductance peak value non-monotonically depends on the FE relaxation time. A maximum appears when the FE relaxation time is of the order of the SET discharging time. Below the Curie point the conductance peak value decreases with increasing the FE relaxation time. The conductance shows the hysteresis behavior for any FE relaxation time at temperatures below the FE transition point. We show that conductance hysteresis is robust against FE internal fluctuations.

preprint2015arXiv

Coupling of (ferro)electricity and magnetism through Coulomb blockade in Composite Multiferroics

Composite multiferroics are materials exhibiting the interplay of ferroelectricity, magnetism, and strong electron correlations. Typical example --- magnetic nano grains embedded in a ferroelectric matrix. Coupling of ferroelectric and ferromagnetic degrees of freedom in these materials is due to the influence of ferroelectric matrix on the exchange coupling constant via screening of the intragrain and intergrain Coulomb interaction. Cooling typical magnetic materials the ordered state appears at lower temperatures than the disordered state. We show that in composite multiferroics the ordered magnetic phase may appear at higher temperatures than the magnetically disordered phase. In non-magnetic materials such a behavior is known as inverse phase transition.

preprint2015arXiv

Electric field control of magnetic properties and magneto-transport in composite multiferroics

We study magnetic state and electron transport properties of composite multiferroic system consisting of a granular ferromagnetic thin film placed above the ferroelectric substrate. Ferroelectricity and magnetism in this case are coupled by the long-range Coulomb interaction. We show that magnetic state and magneto-transport strongly depend on temperature, external electric field, and electric polarization of the substrate. Ferromagnetic order exists at finite temperature range around ferroelectric Curie point. Outside the region the film is in the superparamagnetic state. We demonstrate that magnetic phase transition can be driven by an electric field and magneto-resistance effect has two maxima associated with two magnetic phase transitions appearing in the vicinity of the ferroelectric phase transition. We show that positions of these maxima can be shifted by the external electric field and that the magnitude of the magneto-resistance effect depends on the mutual orientation of external electric field and polarization of the substrate.

preprint2015arXiv

Proximity coupling of granular film with ferroelectric substrate and giant electro-resistance effect

We study electron transport in granular film placed above the ferroelectric substrate. We show that the conductivity of granular film strongly depends on the ferroelectric state due to screening effects which modify the Coulomb blockade in granular film. In particular, the electric current in granular film is controlled by the direction of ferroelectric polarization. We show that the ferroelectric/granular film system has a large electro-resistance effect. This effect can be utilized in memory and electric field sensor applications.

preprint2015arXiv

Single electron tunneling with "slow" insulators

Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the dielectric layers in the tunnel barriers in the fluctuating electric fields induced by single-electron tunneling events and study transport in the single electron transistor (SET). Here "slow" dielectric implies slow compared to the characteristic time scales of the SET charging-discharging effects. We show that for strong enough polarizability, such that the induced charge on the island is comparable with the elementary charge, the transport properties of the SET substantially deviate from the known results of transport theory of SET. In particular, the coulomb blockade is more pronounced at finite temperature, the conductance peaks change their shape and the current-voltage characteristics show the memory-effect (hysteresis). However, in contrast to SETs with ferroelectric tunnel junctions, here the periodicity of the conductance in the gate voltage is not broken, instead the period strongly depends on the polarizability of the gate-dielectric. We uncover the fine structure of the hysteresis-effect where the "large" hysteresis loop may include a number of "smaller" loops. Also we predict the memory effect in the current-voltage characteristics $I(V)$, with $I(V)\neq -I(-V)$.

preprint2014arXiv

Interplay of Coulomb Blockade and Ferroelectricity in Nano-Granular Materials

We study electron transport properties of composite ferroelectrics --- materials consisting of metallic grains embedded in a ferroelectric matrix. In particular, we calculate the conductivity in a wide range of temperatures and electric fields, showing pronounced hysteretic behavior. In weak fields, electron cotunneling is the main transport mechanism. In this case, we show that the ferroelectric matrix strongly influences the transport properties through two effects: i) the dependence of the Coulomb gap on the dielectric permittivity of the ferroelectric matrix, which in turn is controlled by temperature and external field; and ii) the dependence of the tunneling matrix elements on the electric polarization of the ferroelectric matrix, which can be tuned by temperature and applied electric field as well. In the case of strong electric fields, the Coulomb gap is suppressed and only the second mechanism is important. Our results are important for i) thermometers for precise temperature measurements and ii) ferrroelectric memristors.

preprint2014arXiv

Interplay of ferroelectricity and single electron tunneling

We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently calculated along with electron hopping probabilities leading to new physical transport phenomena studying in this paper. These phenomena appear mostly due to effective screening of a grain electric field by ferroelectric environment rather than due to polarization dependent tunneling probabilities. At small bias voltages polarization can be switched by a single excess electron in the grain. In this case transport properties of SET exhibit the instability (memory effect).

preprint2014arXiv

Memory effect in ferroelectric single electron transistor: violation of conductance periodicity in the gate voltage

The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to placing the ferroelectric insulators in the source and drain tunnel junctions. We show that placing the ferroelectric inside the gate capacitance breaks this periodicity. The current-voltage characteristics of this SET strongly depends on the ferroelectric polarization and shows the giant memory-effect even for negligible ferroelectric hysteresis making this device promising for memory applications.

preprint2014arXiv

Phenomenological theory of magneto-electric coupling in granular multiferroics

We study coupling between the ferroelectric polarization and magnetization of granular ferromagnetic film using a phenomenological model of combined multiferroic system consisting of granular ferromagnetic film placed above the ferroelectric (FE) layer. The coupling is due to screening of Coulomb interaction in the granular film by the FE layer. Below the FE Curie temperature the magnetization has hysteresis as a function of electric field. Below the magnetic ordering temperature the polarization has hysteresis as a function of magnetic field. We study the magneto-electric coupling for weak and strong spatial dispersion of the FE layer. The effect of mutual influence decreases with increasing the spatial dispersion of the FE layer. For weak dispersion the strongest coupling occurs in the vicinity of the ferroelectric-paraelectric phase transition. For strong dispersion the situation is the opposite. We study the magneto-electric coupling as a function of distance between the FE layer and the granular film. For large distances the coupling decays exponentially due to the exponential decrease of electric field produced by the oscillating charges in the granular ferromagnetic film.

preprint2013arXiv

Electron Transport Properties of Composite Ferroelectrics

We study electron transport in composite ferroelectrics --- materials consisting of metallic grains embedded in a ferroelectric matrix. Due to its complex tunable morphology the thermodynamic properties of these materials can be essentially different from bulk or thin-film ferroelectrics. We calculate the conductivity of composite ferroelectrics by taking into account the interplay between charge localization, multiple grain boundaries, strong Coulomb repulsion, and ferroelectric order parameter. We show that the ferroelectricity plays a crucial role on the temperature behavior of the conductivity in the vicinity of the ferroelectric-paraelectric transition.

preprint2013arXiv

Universality and quantization of the power to heat ratio in nano-granular systems

We study heating and dissipation effects in granular nanosystems in the regime of weak coupling between the grains. We focus on the cotunneling regime and solve the heat-dissipation problem in an array of grains exactly. We show that the power to heat ratio has a universal quantized value, which is geometrically protected: it depends only on the number of grains.

preprint2012arXiv

Interplay of charge and heat transport in a nano-junction in the out-of-equilibrium cotunneling regime

We study the charge transport and the heat transfer through a nano-junction composed of a small metallic grain weakly coupled to two metallic leads. We focus on the cotunneling regime out-of-equilibrium, where the bias voltage and the temperature gradient between the leads strongly drive electron and phonon degrees of freedom in the grain that in turn have a strong feedback on the transport through the grain. We derive and solve coupled kinetic equations for electron and phonon degrees of freedom in the grain. We obtain the heat fluxes between cotunneling electrons, bosonic electron-hole excitations in the grain, and phonons, and self-consistently find the current-voltage characteristics. We demonstrate that the transport in the nano-junction is very sensitive to the spectrum of the bosonic modes in the grain.

preprint2012arXiv

Transport characteristics of nanojunctions far-from-equilibrium

We study the tunneling transport through a nanojunction in the far-from-equilibrium regime at relatively low temperatures. We show that the current-voltage characteristics is significantly modified as compared to the usual quasi-equilibrium result by lifting the suppression due to the Coulomb blockade. These effects are important in realistic nanojunctions. We study the high-impedance case in detail to explain the underlying physics and construct a more realistic theoretical model for the case of a metallic junction taking into account dynamic Coulomb interaction. This dynamic screening further reduces the effect of the Coulomb blockade.

preprint2011arXiv

Defect states and disorder in charge transport in semiconductor nanowires

We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these regimes provides guidance for the extension of existing models and directly informs the design of next-generation nanoscale electronic devices.

preprint2011arXiv

Frequency dependent polarizability of small metallic grains

We study the dynamic electronic polarizability of a single nano-scale spherical metallic grain using quantum mechanical approach. We introduce the model for interacting electrons bound in the grain allowing us numerically to calculate the frequency dependence of the polarizability of grains of different sizes. We show that within this model the main resonance peak corresponding to the surface plasmon mode is blue-shifted and some minor secondary resonances above and below the main peak exist. We study the behavior of blue shift as a function of grain size and compare our findings with the classical polarizability and with other results in the literature.

preprint2011arXiv

Giant Quantum Freezing of Tunnel Junctions mediated by Environments

We investigate the quantum heat exchange between a nanojunction and a many-body or electromagnetic environment far from equilibrium. It is shown that the two-temperature energy emission-absorption mechanism gives rise to a giant heat flow between the junction and the environment. We obtain analytical results for the heat flow in an idealized high impedance environment and perform numerical calculations for the general case of interacting electrons and discuss the giant freezing and heating effects in the junction under typical experimental conditions.

preprint2010arXiv

Heating Effects in a Chain of Quantum Dots

We study heating effects in a chain of weakly coupled grains due to electron-hole pair creation. The main mechanism for the latter at low temperatures is due to inelastic electron cotunneling processes in the array. We develop a quantitative kinetic theory for these systems and calculate the array temperature profile as a function of grain parameters, bias voltage or current, and time and show that for nanoscale size grains the heating effects are pronounced and easily measurable in experiments. In the low- and high-voltage limits we solve the stationary heat-flux equation analytically. We demonstrate the over-heating hysteresis in the large-current or voltage regimes. In addition we consider the influence of a substrate on the system which acts as a heat sink. We show that nano dot chains can be used as highly sensitive thermometers over a broad range of temperatures.

preprint2009arXiv

Single grain heating due to inelastic cotunneling

We study heating effects of a single metallic quantum dot weakly coupled to two leads. The dominant mechanism for heating at low temperatures is due to inelastic electron cotunneling processes. We calculate the grain temperature profile as a function of grain parameters, bias voltage, and time and show that for nanoscale size grains the heating effects are pronounced and easily measurable in experiments.

preprint2009arXiv

Thermoelectric and Seebeck coefficients of granular metals

In this work we present a detailed study and derivation of the thermopower and thermoelectric coefficient of nano-granular metals at large tunneling conductance between the grains, g_T>> 1. An important criterion for the performance of a thermoelectric device is the thermodynamic figure of merit which is derived using the kinetic coefficients of granular metals. All results are valid at intermediate temperatures, E_c>>T/g_T>δ, where δis the mean energy level spacing for a single grain and E_c its charging energy. We show that the electron-electron interaction leads to an increase of the thermopower with decreasing grain size and discuss our results in the light of future generation thermoelectric materials for low temperature applications. The behavior of the figure of merit depending on system parameters like grain size, tunneling conductance, and temperature is presented.

preprint2007arXiv

Transport properties of semiconducting nanocrystal arrays at low temperatures

We study the electron transport in semiconducting nanocrystal arrays at temperatures $T\ll E_c$, where $E_c$ is the charging energy for a single grain. In this temperature range the electron transport is dominated by co-tunneling processes. We discuss both elastic and inelastic co-tunneling and show that for semiconducting nanocrystal arrays the inelastic contribution is strongly suppressed at low temperatures. We also compare our results with available experimental data.

preprint2006arXiv

Granular Electronic Systems

A granular metal is an array of metallic nano-particles imbedded into an insulating matrix. Tuning the intergranular coupling strength a granular system can be transformed into either a good metal or an insulator and, in case of superconducting particles, experience superconductor-insulator transition. The ease of adjusting electronic properties of granular metals makes them most suitable for fundamental studies of disordered solids and assures them a fundamental role for nanotechnological applications. This Review discusses recent important theoretical advances in the study of granular metals, emphasizing on the interplay of disorder, quantum effects, fluctuations and effects of confinement in formation of electronic transport and thermodynamic properties of granular materials.

preprint2006arXiv

Transport properties of n-type ultrananocrystalline diamond films

We investigate transport properties of ultrananocrystalline diamond films for a broad range of temperatures. Addition of nitrogen during plasma-assisted growth increases the conductivity of ultrananocrystalline diamond films by several orders of magnitude. We show that films produced at low concentration of nitrogen in the plasma are very resistive and electron transport occurs via a variable range hopping mechanism while in films produced at high nitrogen concentration the electron states become delocalized and the transport properties of ultrananocrystalline diamond films can be described using the Boltzmann formalism. We discuss the critical concentration of carriers at which the metal to insulator transition in ultrananocrystalline diamond films occurs and compare our results with available experimental data.