Researcher profile

O. G. Udalov

O. G. Udalov contributes to research discovery and scholarly infrastructure.

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Published work

19 published item(s)

preprint2020arXiv

Manipulation of Dzyaloshinskii-Moriya interaction in Co/Pt multilayers with strain

Interfacial Dzyaloshinskii-Moriya interaction (DMI) is experimentally investigated in Pt/Co/Pt multilayer films under strain. A strong variation (from 0.1 to 0.8 mJ/m$^2$) of the DMI constant is demonstrated at $\pm 0.1\%$ in-plane uniaxial deformation of the films. The anisotropic strain induces strong DMI anisotropy. The DMI constant perpendicular to the strain direction changes sign while the constant along the strain direction does not. Estimates are made showing that DMI manipulation with an electric field can be realized in hybrid ferroelectric/ferromagnetic systems. So, the observed effect opens the way to manipulate the DMI and eventually skyrmions with a voltage via a strain-mediated magneto-electric coupling.

preprint2015arXiv

Competition of magneto-dipole, anisotropy and exchange interactions in composite multiferroics

We study the competition of magneto-dipole, anisotropy and exchange interactions in composite three dimensional multiferroics. Using Monte Carlo simulations we show that magneto-dipole interaction does not suppress the ferromagnetic state caused by the interaction of the ferroelectric matrix and magnetic subsystem. However, the presence of magneto-dipole interaction influences the order-disorder transition: depending on the strength of magneto-dipole interaction the transition from the ferromagnetic to the superparamagnetic state is accompanied either by creation of vortices or domains of opposite magnetization. We show that the temperature hysteresis loop occurs due to non-monotonic behavior of exchange interaction versus temperature. The origin of this hysteresis is related to the presence of stable magnetic domains which are robust against thermal fluctuations.

preprint2015arXiv

Conductance of a SET with a retarded dielectric layer in the gate capacitor

We study conductance of a single electron transistor (SET) with a ferroelectric (or dielectric) layer placed in the gate capacitor. We assume that ferroelectric (FE) has a retarded response with arbitrary relaxation time. We show that in the case of "fast" but still retarded response of the FE (dielectric) layer an additional contribution to the Coulomb blockade effect appears leading to the suppression of the SET conductance. We take into account fluctuations of the FE (dielectric) polarization using Monte-Carlo simulations. For "fast" FE these fluctuations partially suppress the additional Coulomb blockade effect. Using Monte-Carlo simulations we study the transition from "fast" to "slow" FE. For high temperatures the peak value of the SET conductance is almost independent of the FE relaxation time. For temperatures close to the FE Curie temperature the conductance peak value non-monotonically depends on the FE relaxation time. A maximum appears when the FE relaxation time is of the order of the SET discharging time. Below the Curie point the conductance peak value decreases with increasing the FE relaxation time. The conductance shows the hysteresis behavior for any FE relaxation time at temperatures below the FE transition point. We show that conductance hysteresis is robust against FE internal fluctuations.

preprint2015arXiv

Coupling of (ferro)electricity and magnetism through Coulomb blockade in Composite Multiferroics

Composite multiferroics are materials exhibiting the interplay of ferroelectricity, magnetism, and strong electron correlations. Typical example --- magnetic nano grains embedded in a ferroelectric matrix. Coupling of ferroelectric and ferromagnetic degrees of freedom in these materials is due to the influence of ferroelectric matrix on the exchange coupling constant via screening of the intragrain and intergrain Coulomb interaction. Cooling typical magnetic materials the ordered state appears at lower temperatures than the disordered state. We show that in composite multiferroics the ordered magnetic phase may appear at higher temperatures than the magnetically disordered phase. In non-magnetic materials such a behavior is known as inverse phase transition.

preprint2015arXiv

Electric field control of magnetic properties and magneto-transport in composite multiferroics

We study magnetic state and electron transport properties of composite multiferroic system consisting of a granular ferromagnetic thin film placed above the ferroelectric substrate. Ferroelectricity and magnetism in this case are coupled by the long-range Coulomb interaction. We show that magnetic state and magneto-transport strongly depend on temperature, external electric field, and electric polarization of the substrate. Ferromagnetic order exists at finite temperature range around ferroelectric Curie point. Outside the region the film is in the superparamagnetic state. We demonstrate that magnetic phase transition can be driven by an electric field and magneto-resistance effect has two maxima associated with two magnetic phase transitions appearing in the vicinity of the ferroelectric phase transition. We show that positions of these maxima can be shifted by the external electric field and that the magnitude of the magneto-resistance effect depends on the mutual orientation of external electric field and polarization of the substrate.

preprint2015arXiv

Nonreciprocal transmission of neutrons through the noncoplanar magnetic system

We report on observation of the time reversal symmetry breaking in unpolarized neutrons scattering experiment. Neutron transmittivity through the system consisting of two magnetic mirrors placed in an external magnetic field is measured. Time reversal symmetry holds for coplanar magnetic configuration, meaning that transmitted intensity does not change when interchanging neutron source and detector. Contrarily, for noncoplanar magnetic configuration the time reversal symmetry breaks down. In this case the transmitted intensity changes when interchanging the source and detector. The observed time reversal symmetry breaking is the consequence of the one of the most fundamental properties of quantum mechanics, namely the non-commutativity of spin algebra.

preprint2015arXiv

Proximity coupling of granular film with ferroelectric substrate and giant electro-resistance effect

We study electron transport in granular film placed above the ferroelectric substrate. We show that the conductivity of granular film strongly depends on the ferroelectric state due to screening effects which modify the Coulomb blockade in granular film. In particular, the electric current in granular film is controlled by the direction of ferroelectric polarization. We show that the ferroelectric/granular film system has a large electro-resistance effect. This effect can be utilized in memory and electric field sensor applications.

preprint2015arXiv

Single electron tunneling with "slow" insulators

Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the dielectric layers in the tunnel barriers in the fluctuating electric fields induced by single-electron tunneling events and study transport in the single electron transistor (SET). Here "slow" dielectric implies slow compared to the characteristic time scales of the SET charging-discharging effects. We show that for strong enough polarizability, such that the induced charge on the island is comparable with the elementary charge, the transport properties of the SET substantially deviate from the known results of transport theory of SET. In particular, the coulomb blockade is more pronounced at finite temperature, the conductance peaks change their shape and the current-voltage characteristics show the memory-effect (hysteresis). However, in contrast to SETs with ferroelectric tunnel junctions, here the periodicity of the conductance in the gate voltage is not broken, instead the period strongly depends on the polarizability of the gate-dielectric. We uncover the fine structure of the hysteresis-effect where the "large" hysteresis loop may include a number of "smaller" loops. Also we predict the memory effect in the current-voltage characteristics $I(V)$, with $I(V)\neq -I(-V)$.

preprint2014arXiv

Interplay of Coulomb Blockade and Ferroelectricity in Nano-Granular Materials

We study electron transport properties of composite ferroelectrics --- materials consisting of metallic grains embedded in a ferroelectric matrix. In particular, we calculate the conductivity in a wide range of temperatures and electric fields, showing pronounced hysteretic behavior. In weak fields, electron cotunneling is the main transport mechanism. In this case, we show that the ferroelectric matrix strongly influences the transport properties through two effects: i) the dependence of the Coulomb gap on the dielectric permittivity of the ferroelectric matrix, which in turn is controlled by temperature and external field; and ii) the dependence of the tunneling matrix elements on the electric polarization of the ferroelectric matrix, which can be tuned by temperature and applied electric field as well. In the case of strong electric fields, the Coulomb gap is suppressed and only the second mechanism is important. Our results are important for i) thermometers for precise temperature measurements and ii) ferrroelectric memristors.

preprint2014arXiv

Interplay of ferroelectricity and single electron tunneling

We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently calculated along with electron hopping probabilities leading to new physical transport phenomena studying in this paper. These phenomena appear mostly due to effective screening of a grain electric field by ferroelectric environment rather than due to polarization dependent tunneling probabilities. At small bias voltages polarization can be switched by a single excess electron in the grain. In this case transport properties of SET exhibit the instability (memory effect).

preprint2014arXiv

Memory effect in ferroelectric single electron transistor: violation of conductance periodicity in the gate voltage

The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to placing the ferroelectric insulators in the source and drain tunnel junctions. We show that placing the ferroelectric inside the gate capacitance breaks this periodicity. The current-voltage characteristics of this SET strongly depends on the ferroelectric polarization and shows the giant memory-effect even for negligible ferroelectric hysteresis making this device promising for memory applications.

preprint2014arXiv

Phenomenological theory of magneto-electric coupling in granular multiferroics

We study coupling between the ferroelectric polarization and magnetization of granular ferromagnetic film using a phenomenological model of combined multiferroic system consisting of granular ferromagnetic film placed above the ferroelectric (FE) layer. The coupling is due to screening of Coulomb interaction in the granular film by the FE layer. Below the FE Curie temperature the magnetization has hysteresis as a function of electric field. Below the magnetic ordering temperature the polarization has hysteresis as a function of magnetic field. We study the magneto-electric coupling for weak and strong spatial dispersion of the FE layer. The effect of mutual influence decreases with increasing the spatial dispersion of the FE layer. For weak dispersion the strongest coupling occurs in the vicinity of the ferroelectric-paraelectric phase transition. For strong dispersion the situation is the opposite. We study the magneto-electric coupling as a function of distance between the FE layer and the granular film. For large distances the coupling decays exponentially due to the exponential decrease of electric field produced by the oscillating charges in the granular ferromagnetic film.

preprint2013arXiv

Electron Transport Properties of Composite Ferroelectrics

We study electron transport in composite ferroelectrics --- materials consisting of metallic grains embedded in a ferroelectric matrix. Due to its complex tunable morphology the thermodynamic properties of these materials can be essentially different from bulk or thin-film ferroelectrics. We calculate the conductivity of composite ferroelectrics by taking into account the interplay between charge localization, multiple grain boundaries, strong Coulomb repulsion, and ferroelectric order parameter. We show that the ferroelectricity plays a crucial role on the temperature behavior of the conductivity in the vicinity of the ferroelectric-paraelectric transition.

preprint2012arXiv

"Skew" scattering of cold unpolarized neutrons in ferromagnetic crystal

The problem of neutron scattering by the single magnetic atom is theoretically considered in the second order perturbation theory. It is demonstrated that elastic scattering of unpolarized neutron by magnetic atom is skewed, i.e. contains the term with the symmetry of mixed product of the atom magnetic moment and wave vectors of incident and scattered neutrons. The problem of dynamical diffraction of unpolarized neutrons by the perfect ferromagnetic crystal is investigated. The case is considered when the Bragg condition is satisfied for two reciprocal lattice vectors. In this case neutron skew scattering manifests itself as the dependence of the diffracted beam intensity on the sign of the crystal magnetization. The calculations have been done for the diffraction of unpolarized neutrons by Dy crystal. In case of the diffraction by Dy the change of the intensity under the magnetization reversal achieves 50%.

preprint2012arXiv

Non-reciprocal light scattering by lattice of magnetic vortices

We report on experimental study of optical properties of two-dimensional square lattice of triangle Co and CoFe nanoparticles with a vortex magnetization distribution. We demonstrate that intensity of light scattered in diffraction maxima depends on the vorticity of the particles magnetization and it can be manipulated by applying an external magnetic field. The experimental results can be understood in terms of phenomenological theory.

preprint2011arXiv

Non-reciprocity in elastic unpolarized neutron scattering by systems with non-coplanar magnetic structure

The paper provides a theoretical analysis for elastic unpolarized neutron scattering by systems having a non-coplanar magnetic induction spatial distribution. It is shown that reciprocity does not hold for neutron scattered by these systems. The scattering of unpolarized neutrons by a system of three magnetic mirrors and by a ferromagnetic particle in a "vortex" state is also explored.

preprint2009arXiv

Anti-vortex state in cross-like nanomagnets

We report on results of computer micromodelling of anti-vortex states in asymmetrical cross-like ferromagnetic nanostructures and their practical realization. The arrays of cobalt crosses with 1 mkm branches, 100 nm widths of the branches and 40 nm thicknesses were fabricated using e-beam lithography and ion etching. Each branch of the cross was tapered at one end and bulbous at the other. The stable formation of anti-vortex magnetic states in these nanostructures during magnetization reversal was demonstrated experimentally using magnetic force microscopy.

preprint2007arXiv

Diode Effect in the Medium with a Helical Magnetic Structure

The volt-ampere characteristics of a medium with helical magnetic structure are theoretically studied. Phenomenological and microscopic theories of a diode effect in such a medium are proposed. Diode effect appears only in the medium with noncoplanar magnetic structure. Two mechanisms for the diode effect are considered. They are electron energy spectrum asymmetry and electron scattering asymmetry.