BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Vasili Perebeinos

Vasili Perebeinos contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elquant-phphysics.app-phphysics.optics

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
20works
0followers
6topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

20 published item(s)

preprint2026arXiv

Intrinsic ultrafast edge photocurrent dynamics in WTe$_2$ driven by broken crystal symmetry

Directional photocurrents in two-dimensional materials arise from broken crystal symmetry, offering pathways to high-speed, bias-free photodetection beyond conventional devices. Tungsten ditelluride (WTe$_2$), a type-II Weyl semimetal, exhibits robust symmetry-breaking-induced edge photocurrents from competing nonlinear optical and photothermoelectric mechanisms, whose intrinsic dynamics have remained experimentally inaccessible. Here, we directly resolve sub-picosecond edge photocurrent dynamics in WTe$_2$ through ohmic contacts over temperatures from 300 K to 4 K. We demonstrate ultrafast optical-to-electrical conversion with a 3 dB bandwidth of $\sim$250 GHz and reveal picosecond-timescale switching of the net photocurrent direction below 150 K, linked to a Lifshitz transition. This transient bipolar response arises from non-equilibrium Seebeck effects due to asymmetric cooling of hot electrons and holes. These findings reveal previously hidden ultrafast dynamics in symmetry-engineered materials, offering new strategies to disentangle competing photocurrent mechanisms and enabling the development of self-powered, ultrafast optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Dynamical Control of Interlayer Excitons and Trions in WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ Heterobilayer via Tunable Near-Field Cavity

Emerging photo-induced excitonic processes in transition metal dichalcogenide (TMD) heterobilayers, e.g., coupling, dephasing, and energy transfer of intra- and inter-layer excitons, allow new opportunities for ultrathin photonic devices. Yet, with the associated large degree of spatial heterogeneity, understanding and controlling their complex competing interactions at the nanoscale remains a challenge. Here, we present an all-round dynamic control of intra- and inter-layer excitonic processes in a WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ heterobilayer using multifunctional tip-enhanced photoluminescence (TEPL) spectroscopy. Specifically, we control the radiative recombination path and emission rate, electronic bandgap energy, and neutral to charged exciton conversion with <20 nm spatial resolution in a reversible manner. It is achieved through the tip-induced engineering of Au tip-heterobilayer distance and interlayer distance, GPa scale local pressure, and plasmonic hot-electron injection respectively, with simultaneous spectroscopic TEPL measurements. This unique nano-opto-electro-mechanical control approach provides new strategies for developing versatile nano-excitonic devices based on TMD heterobilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Entanglement generation in a quantum network with finite quantum memory lifetime

We simulate entanglement sharing between two end-nodes of a quantum network using SeQUeNCe, an open-source simulation package for quantum networks. Our focus is on the rate of entanglement generation between the end-nodes with many repeaters with a finite quantum memory lifetime. Our findings demonstrate that the performance of quantum connection depends highly on the entanglement management protocol scheduling entanglement generation and swapping, resulting in the final end-to-end entanglement. Numerical and analytical simulations show limits of connection performance for a given number of repeaters involved, memory lifetimes for a given distance between the end nodes, and an entanglement management protocol.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Non-local thermal transport modeling using the thermal distributor

Thermal transport in a quasi-ballistic regime is determined not only by the local temperature $T(r)$, or its gradient $\nabla T(r)$, but also by temperature distribution at neighboring points. For an accurate description of non-local effects on thermal transport, we employ the thermal distributor, $Θ(r,r&#39;)$, which provides the temperature response of the system at point $r$ to the heat input at point $r&#39;$. We determine the thermal distributors from the linearized Peierls-Boltzmann equation (LPBE) and the relaxation time approximation (RTA) of the Peierls-Boltzmann equation and employ them to describe thermal transport in quasi-ballistic graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nonlinear spectroscopy of excitonic states in transition metal dichalcogenides

Second-harmonic generation (SHG) is a well-known nonlinear spectroscopy method to probe electronic structure, specifically, in transition metal dichalcogenide (TMDC) monolayers. This work investigates the nonlinear dynamics of a strongly excited TMDC monolayer by solving the time evolution equations for the density matrix. It is shown that the presence of excitons qualitatively changes the nonlinear dynamics leading, in particular, to a huge enhancement of the nonlinear signal as a function of the dielectric environment. It is also shown that the SHG polarization angular diagram and its dependence on the driving strength are very sensitive to the type of exciton state. This sensitivity suggests that SHG spectroscopy is a convenient tool for analyzing the fine structure of excitonic states.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum Sensing of Single Phonons via Phonon Drag in Two-Dimensional Materials

The capacity to electrically detect phonons, ultimately at the single-phonon limit, is a key requirement for many schemes for phonon-based quantum computing, so-called quantum phononics. Here, we predict that by exploiting the strong coupling of their electrons to surface-polar phonons, van der Waals heterostructures can offer a suitable platform for phonon sensing, capable of resolving energy transfer at the single-phonon level. The geometry we consider is one in which a drag momentum is exerted on electrons in a graphene layer, by a single out-of-equilibrium phonon in a dielectric layer of hexagonal boron nitride, giving rise to a measurable induced voltage ($V_{\rm drag}$). Our numerical solution of the Boltzmann Transport Equation shows that this drag voltage can reach a level of a few hundred microvolts per phonon, well above experimental detection limits. Furthermore, we predict that $V_{\rm drag}$ should be highly insensitive to the mobility of carriers in the graphene layer and to increasing the temperature to at least 300 K, offering the potential of a versatile material platform for single-phonon sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electrostatic control of the trion fine structure in transition metal dichalcogenide monolayers

Charged excitons (trions) are essential for the optical spectra in low dimensional doped monolayers (ML) of transitional metal dichalcogenides (TMDC). Using a direct diagonalization of the three-body Hamiltonian, we explore the low-lying trion states in four types of TMDC MLs. We show that the trions fine structure results from the interplay between the spin-valley fine structure of the single-particle bands and the exchange interaction between the composing particles. We demonstrate that by variations of the doping and dielectric environment, trion energy fine structure can be tuned, leading to anti-crossing of the bright and dark states with substantial implications for the optical spectra of TMDC MLs.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Simulation of Scanning Near-Field Optical Microscopy Spectra of 1D Plasmonic Graphene Junctions

We present numerical simulations of scattering-type Scanning Near-Field Optical Microscopy (s-SNOM) of 1D plasmonic graphene junctions. A comprehensive analysis of simulated s-SNOM spectra is performed for three types of junctions. We find conditions when the conventional interpretation of the plasmon reflection coefficients from s-SNOM measurements does not apply. Our results are applicable to other conducting 2D materials and provide a comprehensive understanding of the s-SNOM techniques for probing local transport properties of 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Trion induced photoluminescence of a doped MoS2 monolayer

We demonstrate that the temperature and doping dependencies of the photoluminescence (PL) spectra of a doped MoS2 monolayer have several peculiar characteristics defined by trion radiative decay. While only zero-momentum exciton states are coupled to light, radiative recombination of non-zero momentum trions is also allowed. This leads to an asymmetric broadening of the trion spectral peak and redshift of the emitted light with increasing temperature. The lowest energy trion state is dark, which is manifested by the sharply non-monotonic temperature dependence of the PL intensity. Our calculations combine the Dirac model for the single-particle states, the parameters for which are obtained from the first principle calculations, and the direct solution of the three-particle problem within the Tamm-Dancoff approximation. The numerical results are well captured by a simple model that yields analytical expressions for the temperature dependencies of the PL spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Three-particle states and brightening of intervalley excitons in a doped MoS$_2$ monolayer

Optical spectra of two-dimensional transition-metal dichalcogenides (TMDC) are influenced by complex multi-particle excitonic states. Their theoretical analysis requires solving the many-body problem, which in most cases, is prohibitively complicated. In this work, we calculate the optical spectra by exact diagonalization of the three-particle Hamiltonian within the Tamm-Dancoff approximation where the doping effects are accounted for via the Pauli blocking mechanism, modelled by a discretized mesh in the momentum space. The single-particle basis is extracted from the {\it ab initio} calculations. Obtained three-particle eigenstates and the corresponding transition dipole matrix elements are used to calculate the linear absorption spectra as a function of the doping level. Results for negatively doped MoS$_2$ monolayer (ML) are in an excellent quantitative agreement with the available experimental data, validating our approach. The results predict additional spectral features due to the intervalley exciton that is optically dark in an undoped ML but is brightened by the doping. Our approach can be applied to a plethora of other atomically thin semiconductors, where the doping induced brightening of the many-particle states is also anticipated.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Effects of optical and surface polar phonons on the optical conductivity of doped graphene

Using the Kubo linear response formalism, we study the effects of intrinsic graphene optical and surface polar phonons (SPPs) on the optical conductivity of doped graphene. We find that inelastic electron-phonon scattering contributes significantly to the phonon-assisted absorption in the optical gap. At room temperature, this midgap absorption can be as large as 20-25% of the universal ac conductivity for graphene on polar substrates due to strong electron-SPP coupling. The midgap absorption, moreover, strongly depends on the substrates and doping levels used. With increasing temperature, the midgap absorption increases, while the Drude peak, on the other hand, becomes broader as inelastic electron-phonon scattering becomes more probable. Consequently, the Drude weight decreases with increasing temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magneto-optical conductivity of graphene on polar substrates

We theoretically study the effect of polar substrates on the magneto-optical conductivity of doped monolayer graphene, where we particularly focus on the role played by surface polar phonons (SPPs). Our calculations suggest that polaronic shifts of the intra- and interband absorption peaks can be significantly larger for substrates with strong electron-SPP coupling than those in graphene on non-polar substrates, where only intrinsic graphene optical phonons with much higher energies contribute. Electron-phonon scattering and phonon-assisted transitions are, moreover, found to result in a loss of spectral weight at the absorption peaks. The strength of these processes is strongly temperature-dependent and with increasing temperatures the magneto-optical conductivity becomes increasingly affected by polar substrates, most noticeably in polar substrates with small SPP energies such as HfO$_2$. The inclusion of a Landau level-dependent scattering rate to account for Coulomb impurity scattering does not alter this qualitative picture, but can play an important role in determining the lineshape of the absorption peaks, especially at low temperatures, where impurity scattering dominates.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Cooling of photoexcited carriers in graphene by internal and substrate phonons

We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculate key characteristics of the energy relaxation process, such as the transient cooling time and steady state carrier temperatures and photocarriers densities, which determine the thermoelectric and photovoltaic photoresponse, respectively. Substrate engineering can be a promising route to efficient optoelectronic devices driven by hot carrier dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Deformation and scattering in graphene over substrate steps

The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the substrate. Here we calculate the deformation of graphene at substrate steps, and the resulting electrical resistance, over a wide range of step heights. The elastic deformations contribute only a very small resistance at the step. However, for graphene on SiC(0001) there is strong substrate-induced doping, and this is substantially reduced on the lower side of the step where graphene pulls away from the substrate. The resulting resistance explains the experimental measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum behavior of graphene transistors near the scaling limit

The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly-resolved Fabry-Perot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene screening determining the heterojunction barrier width, the scaling of minimum conductivity and of the on/off current ratio, are investigated.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Structure and electronic transport in graphene wrinkles

Wrinkling is a ubiquitous phenomenon in two-dimensional membranes. In particular, in the large-scale growth of graphene on metallic substrates, high densities of wrinkles are commonly observed. Despite their prevalence and potential impact on large-scale graphene electronics, relatively little is known about their structural morphology and electronic properties. Surveying the graphene landscape using atomic force microscopy, we found that wrinkles reach a certain maximum height before folding over. Calculations of the energetics explain the morphological transition, and indicate that the tall ripples are collapsed into narrow standing wrinkles by van der Waals forces, analogous to large-diameter nanotubes. Quantum transport calculations show that conductance through these collapsed wrinkle structures is limited mainly by a density-of-states bottleneck and by interlayer tunneling across the collapsed bilayer region. Also through systematic measurements across large numbers of devices with wide folded wrinkles, we find a distinct anisotropy in their electrical resistivity, consistent with our transport simulations. These results highlight the coupling between morphology and electronic properties, which has important practical implications for large-scale high-speed graphene electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Relaxation of Optically Excited Carriers in Graphene

We explore the relaxation of photo-excited graphene by solving a transient Boltzmann transport equation with electron-phonon (e-ph) and electron-electron (e-e) scattering. Simulations show that when the excited carriers are relaxed by e-ph scattering only, a population inversion can be achieved at energies determined by the photon energy. However, e-e scattering quickly thermalizes the carrier energy distributions washing out the negative optical conductivity peaks. The relaxation rates and carrier multiplication effects are presented as a function of photon energy and dielectric constant.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Efficient narrow-band light emission from a single carbon nanotube p-n diode

Electrically-driven light emission from carbon nanotubes could be exploited in nano-scale lasers and single-photon sources, and has therefore been the focus of much research. However, to date, high electric fields and currents have been either required for electroluminescence, or have been an undesired side effect, leading to high power requirements and low efficiencies. In addition, electroluminescent linewidths have been broad enough to obscure the contributions of individual optical transitions. Here, we report electrically-induced light emission from individual carbon nanotube p-n diodes. A new level of control over electrical carrier injection is achieved, reducing power dissipation by a factor of up to 1000, and resulting in zero threshold current, negligible self-heating, and high carrier-to- photon conversion efficiencies. Moreover, the electroluminescent spectra are significantly narrower (ca. 35 meV) than in previous studies, allowing the identification of emission from free and localized excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermal infrared emission reveals the Dirac point movement in biased graphene

Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly independent of wavelength. Here we investigate the thermal radiation from biased graphene transistors. We find that the emission spectrum of single-layer graphene follows that of a grey body with constant emissivity (1.6 \pm 0.8)%. Most importantly, we can extract the temperature distribution in the ambipolar graphene channel, as confirmed by Stokes/anti-Stokes measurements. The biased graphene exhibits a temperature maximum whose location can be controlled by the gate voltage. We show that this peak in temperature reveals the spatial location of the minimum in carrier density, i.e. the Dirac point.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

An essential mechanism of heat dissipation in carbon nanotube electronics

Excess heat generated in integrated circuits is one of the major problems of modern electronics. Surface phonon-polariton scattering is shown here to be the dominant mechanism for hot charge carrier energy dissipation in a nanotube device fabricated on a polar substrate, such as $SiO_2$. Using microscopic quantum models the Joule losses were calculated for the various energy dissipation channels as a function of the electric field, doping, and temperature. The polariton mechanism must be taken into account to obtain an accurate estimate of the effective thermal coupling of the non-suspended nanotube to the substrate, which was found to be 0.1-0.2 W/m.K even in the absence of the bare phononic thermal coupling.

0 citations0 reviewsNo code linkedOpen access